Pub Date : 1991-06-12DOI: 10.1109/UGIM.1991.148133
N.A. Koziarz
Methods of determining contractors' ability to meet the requirements of the radiation-hardened 32-b processor before actual production are presented. Standard evaluation circuits were examined, and the results used a gauge to evaluate the contractor performance. Using tests such as wafer yield, electrical tests, package screening, and radiation testing, the test chip could be used to judge the final product.<>
{"title":"Assessing performance of standard evaluation circuits for radiation hardened 32 bit processor","authors":"N.A. Koziarz","doi":"10.1109/UGIM.1991.148133","DOIUrl":"https://doi.org/10.1109/UGIM.1991.148133","url":null,"abstract":"Methods of determining contractors' ability to meet the requirements of the radiation-hardened 32-b processor before actual production are presented. Standard evaluation circuits were examined, and the results used a gauge to evaluate the contractor performance. Using tests such as wafer yield, electrical tests, package screening, and radiation testing, the test chip could be used to judge the final product.<<ETX>>","PeriodicalId":163406,"journal":{"name":"Proceedings Ninth Biennial University/Government/Industry Microelectronics Symposium","volume":"484 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1991-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123402924","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1991-06-12DOI: 10.1109/UGIM.1991.148151
S. Dean
The author identifies two root causes and a number of special causes of high-P/low-N threshold voltage in the Bimos process. The first root cause was chemical carryover from wafer carriers exposed to HF. the F/sup -/ retained in the carrier can hydrate, form a vapor, and condense on the wafer. This phenomenon was the source of a large amount of unexplained high-P threshold problems in the past. The second root cause was oxide charge being introduced at the trim anneal furnace operation. Increasing the N/sub 2/ flow brought a major yield loss problem under control. since the two root causes have been eliminated, there have been no significant threshold voltage problems with this technology.<>
{"title":"Characterization and elimination of threshold voltage problems in the Bimos process","authors":"S. Dean","doi":"10.1109/UGIM.1991.148151","DOIUrl":"https://doi.org/10.1109/UGIM.1991.148151","url":null,"abstract":"The author identifies two root causes and a number of special causes of high-P/low-N threshold voltage in the Bimos process. The first root cause was chemical carryover from wafer carriers exposed to HF. the F/sup -/ retained in the carrier can hydrate, form a vapor, and condense on the wafer. This phenomenon was the source of a large amount of unexplained high-P threshold problems in the past. The second root cause was oxide charge being introduced at the trim anneal furnace operation. Increasing the N/sub 2/ flow brought a major yield loss problem under control. since the two root causes have been eliminated, there have been no significant threshold voltage problems with this technology.<<ETX>>","PeriodicalId":163406,"journal":{"name":"Proceedings Ninth Biennial University/Government/Industry Microelectronics Symposium","volume":"109 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1991-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115211697","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
京公网安备 11010802042870号
京ICP备2023020795号-1
扫码关注我们
求助内容：
应助结果提醒方式：