Volatile threshold-switching (TS) devices have been used as selectors and to simulate neurons in neural networks. It is necessary to find new ways to improve their performance. The randomness of conductive filament (CF) growth and the endurance of the devices are urgent issues at present. Here, we explored embedded Ag nanoislands (NIs) in HfO2-based TS devices to limit the position of the CF and facilitate its growth at the same time. The Au/Ag(2 nm)/HfO2(4 nm)/Ag NIs/Au volatile TS devices exhibited forming-free characteristics with improved endurance compared with the devices without Ag NIs, which was ascribed to the enhanced localization of the electrical field and increased oxygen vacancies in HfO2 induced by the Ag NIs. A mechanism was proposed to explain the volatile TS behaviors of the devices. The Ag NIs and the thickness of the HfO2 layers played key roles in whether the devices required forming. This work shows that the use of metal NIs is an effective and convenient way to improve the performance of TS devices.
{"title":"The Effects of Ag Nanoislands on the Volatile Threshold-Switching Behaviors of Au/Ag/HfO2/Ag Nanoislands/Au Devices","authors":"Fanlin Long, Yichuan Zhang, Zhaozhu Qu, Peiwen Lv, Baolin Zhang","doi":"10.1155/2023/6675683","DOIUrl":"https://doi.org/10.1155/2023/6675683","url":null,"abstract":"Volatile threshold-switching (TS) devices have been used as selectors and to simulate neurons in neural networks. It is necessary to find new ways to improve their performance. The randomness of conductive filament (CF) growth and the endurance of the devices are urgent issues at present. Here, we explored embedded Ag nanoislands (NIs) in HfO2-based TS devices to limit the position of the CF and facilitate its growth at the same time. The Au/Ag(2 nm)/HfO2(4 nm)/Ag NIs/Au volatile TS devices exhibited forming-free characteristics with improved endurance compared with the devices without Ag NIs, which was ascribed to the enhanced localization of the electrical field and increased oxygen vacancies in HfO2 induced by the Ag NIs. A mechanism was proposed to explain the volatile TS behaviors of the devices. The Ag NIs and the thickness of the HfO2 layers played key roles in whether the devices required forming. This work shows that the use of metal NIs is an effective and convenient way to improve the performance of TS devices.","PeriodicalId":16442,"journal":{"name":"Journal of Nanomaterials","volume":"52 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-05-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74761617","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Yazdan Choghazardi, H. Azimian, Alireza Montazer Abadi, Milad Mohammadi Khoshisani, Fereshteh Vaziri Nezamdoust, H. Gholamhosseinian
The aim of this study was to assess the radiosensitivity of bismuth sulfide nanoparticles conjugated with a synthetic agonist analog of gonadotropin-releasing hormones in targeted radiotherapy for breast cancer. After synthesis and characterization of nanoparticles, cytotoxicity of nanoparticles was measured by MTT assay, and the survival fraction was determined by colony formation assay. Finally, flow cytometry was performed to identify the mechanism of radiosensitization. Characterization results determined the spherical shape of Bi2S3@BSA with an average size of 8.649 ± 1.6 nm, and Fourier transform infrared confirmed the successful binding of triptorelin to the surface of the nanoparticles. MTT test results show that the Bi2S3@BSA–triptorelin did not cause any toxicity ( P <