P. D. Babu, P. K. Mishra, V. Dube, R. Mishra, P. Sastry, G. Ravikumar
Magnetic phase of FeGe2 intermetallic is studied using low-temperature neutron diffraction and DC magnetization. Zero-magnetic-field neutron scattering data shows the presence of an antiferromagnetic phase in the low temperature range. We find the evidence of the presence of a ferromagnetic order overriding on the predominantly antiferromagnetic phase at low temperatures.
{"title":"Magnetic structure at low temperatures in FeGe2","authors":"P. D. Babu, P. K. Mishra, V. Dube, R. Mishra, P. Sastry, G. Ravikumar","doi":"10.1063/1.4873043","DOIUrl":"https://doi.org/10.1063/1.4873043","url":null,"abstract":"Magnetic phase of FeGe2 intermetallic is studied using low-temperature neutron diffraction and DC magnetization. Zero-magnetic-field neutron scattering data shows the presence of an antiferromagnetic phase in the low temperature range. We find the evidence of the presence of a ferromagnetic order overriding on the predominantly antiferromagnetic phase at low temperatures.","PeriodicalId":16850,"journal":{"name":"Journal of Physics C: Solid State Physics","volume":"104 1","pages":"1586-1588"},"PeriodicalIF":0.0,"publicationDate":"2014-04-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79090931","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Compositional dependence of thermal and optical properties of Pb9Se71Ge20−xSnx (x = 8, 9,10,11,12 at. %) glass have been studied. Glass transition and crystallization kinetic has been investigated by DSC technique under non-isothermal conditions and at different heating rates. Phase separation in the material has been observed and present phases have been detected by examining the XRD of annealed bulk samples. Material possesses good glass forming ability, glass stability and high value glass transition temperature. Various optical constants such as refractive index, extinction coefficient and optical band gap have been determined by analyzing optical transmittance data in the wavelength range of 200–2500 nm.
{"title":"The study of thermal and optical properties of Sn added Pb-Se-Ge chalcogenide glass","authors":"V. Modgil, Prashant Kumar, A. Nidhi, V. S. Rangra","doi":"10.1063/1.4872774","DOIUrl":"https://doi.org/10.1063/1.4872774","url":null,"abstract":"Compositional dependence of thermal and optical properties of Pb9Se71Ge20−xSnx (x = 8, 9,10,11,12 at. %) glass have been studied. Glass transition and crystallization kinetic has been investigated by DSC technique under non-isothermal conditions and at different heating rates. Phase separation in the material has been observed and present phases have been detected by examining the XRD of annealed bulk samples. Material possesses good glass forming ability, glass stability and high value glass transition temperature. Various optical constants such as refractive index, extinction coefficient and optical band gap have been determined by analyzing optical transmittance data in the wavelength range of 200–2500 nm.","PeriodicalId":16850,"journal":{"name":"Journal of Physics C: Solid State Physics","volume":"13 1","pages":"839-841"},"PeriodicalIF":0.0,"publicationDate":"2014-04-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79273207","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
S. Srivastava, S. Sharma, P. Sharma, Vinay S. Sharma, Rajveer Singh Rajura, M. Singh, Y. K. Vijay
In the present work we have reported the effect of temperature on the gas sensing properties of TiO{sub 2} doped PANI composite thin film based chemiresistor type gas sensors for hydrogen gas sensing application. PANI and TiO{sub 2} doped PANI composite were synthesized by in situ chemical oxidative polymerization of aniline at low temperature. The electrical properties of these composite thin films were characterized by I-V measurements as function of temperature. The I-V measurement revealed that conductivity of composite thin films increased as the temperature increased. The changes in resistance of the composite thin film sensor were utilized for detection of hydrogen gas. It was observed that at room temperature TiO{sub 2} doped PANI composite sensor shows higher response value and showed unstable behavior as the temperature increased. The surface morphology of these composite thin films has also been characterized by scanning electron microscopy (SEM) measurement.
{"title":"Temperature dependence of gas sensing behaviour of TiO2 doped PANI composite thin films","authors":"S. Srivastava, S. Sharma, P. Sharma, Vinay S. Sharma, Rajveer Singh Rajura, M. Singh, Y. K. Vijay","doi":"10.1063/1.4872722","DOIUrl":"https://doi.org/10.1063/1.4872722","url":null,"abstract":"In the present work we have reported the effect of temperature on the gas sensing properties of TiO{sub 2} doped PANI composite thin film based chemiresistor type gas sensors for hydrogen gas sensing application. PANI and TiO{sub 2} doped PANI composite were synthesized by in situ chemical oxidative polymerization of aniline at low temperature. The electrical properties of these composite thin films were characterized by I-V measurements as function of temperature. The I-V measurement revealed that conductivity of composite thin films increased as the temperature increased. The changes in resistance of the composite thin film sensor were utilized for detection of hydrogen gas. It was observed that at room temperature TiO{sub 2} doped PANI composite sensor shows higher response value and showed unstable behavior as the temperature increased. The surface morphology of these composite thin films has also been characterized by scanning electron microscopy (SEM) measurement.","PeriodicalId":16850,"journal":{"name":"Journal of Physics C: Solid State Physics","volume":"36 1","pages":"693-695"},"PeriodicalIF":0.0,"publicationDate":"2014-04-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83226503","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
In this work hexagonal tubes of zinc oxide have been synthesized by co-precipitation method. For structural, morphological, elemental and optical analysis synthesized powders were characterized by using x-ray diffraction, field emission scanning microscope, EDX, UV-visible and FTIR techniques. For acetone sensing thick films of zinc oxide have been deposited on alumina substrate. The fabricated sensors exhibited maximum sensing response towards acetone vapour at an optimum operating temperature of 400°C.
{"title":"Acetone sensor based on zinc oxide hexagonal tubes","authors":"Anita Hastir, O. Singh, K. Anand, Ravinder Singh","doi":"10.1063/1.4872795","DOIUrl":"https://doi.org/10.1063/1.4872795","url":null,"abstract":"In this work hexagonal tubes of zinc oxide have been synthesized by co-precipitation method. For structural, morphological, elemental and optical analysis synthesized powders were characterized by using x-ray diffraction, field emission scanning microscope, EDX, UV-visible and FTIR techniques. For acetone sensing thick films of zinc oxide have been deposited on alumina substrate. The fabricated sensors exhibited maximum sensing response towards acetone vapour at an optimum operating temperature of 400°C.","PeriodicalId":16850,"journal":{"name":"Journal of Physics C: Solid State Physics","volume":"3 1","pages":"898-900"},"PeriodicalIF":0.0,"publicationDate":"2014-04-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79513813","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
High pressure X-ray diffraction studies on rare-earth gallide YGa was carried up to a pressure of ∼ 33 GPa using rotating anode x-ray source in an angle dispersive mode. YGa exhibits CrB (B33) type orthorhombic structure (space group Cmcm) at ambient pressure. It undergoes a reversible structural phase transition from orthorhombic to tetragonal structure at ∼ 8.8 GPa. Both the phases coexist up to the highest pressure studied. The zero pressure bulk modulus and its derivative for parent phase have been estimated to be Bo = 60 ± 3 GPa, Bo' = 4.6 ± 1.5.
{"title":"Structural behaviour of YGa under high pressure","authors":"M. Sekar, N. Shekar, P. Sahu, R. Babu","doi":"10.1063/1.4872503","DOIUrl":"https://doi.org/10.1063/1.4872503","url":null,"abstract":"High pressure X-ray diffraction studies on rare-earth gallide YGa was carried up to a pressure of ∼ 33 GPa using rotating anode x-ray source in an angle dispersive mode. YGa exhibits CrB (B33) type orthorhombic structure (space group Cmcm) at ambient pressure. It undergoes a reversible structural phase transition from orthorhombic to tetragonal structure at ∼ 8.8 GPa. Both the phases coexist up to the highest pressure studied. The zero pressure bulk modulus and its derivative for parent phase have been estimated to be Bo = 60 ± 3 GPa, Bo' = 4.6 ± 1.5.","PeriodicalId":16850,"journal":{"name":"Journal of Physics C: Solid State Physics","volume":"15 1","pages":"92-93"},"PeriodicalIF":0.0,"publicationDate":"2014-04-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74217625","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The indium doped CdO thin films have been prepared by the sol-gel spin coating technique and the influence of indium doping concentration on the structural and electrical properties of the deposited films has been investigated. The indium doping concentration in the solution has been varied from 0-10 wt% insteps of 2wt%. A indium doping concentration of 6wt% has been found to be optimum for preparing the films and at this stage a minimum resistivity of 5.92×10−4Ω cm and a maximum carrier concentration of 1.20×1020cm−3 have been realized.
{"title":"Structural and electrical properties of sol-gel spin coated indium doped cadmium oxide thin films","authors":"R. Rajammal, E. Savarimuthu, S. Arumugam","doi":"10.1063/1.4872839","DOIUrl":"https://doi.org/10.1063/1.4872839","url":null,"abstract":"The indium doped CdO thin films have been prepared by the sol-gel spin coating technique and the influence of indium doping concentration on the structural and electrical properties of the deposited films has been investigated. The indium doping concentration in the solution has been varied from 0-10 wt% insteps of 2wt%. A indium doping concentration of 6wt% has been found to be optimum for preparing the films and at this stage a minimum resistivity of 5.92×10−4Ω cm and a maximum carrier concentration of 1.20×1020cm−3 have been realized.","PeriodicalId":16850,"journal":{"name":"Journal of Physics C: Solid State Physics","volume":"29 1","pages":"1021-1023"},"PeriodicalIF":0.0,"publicationDate":"2014-04-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76751650","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Epitaxial thin films of rare earth manganites have generated much attention recently due to their rich phase diagram. The electronic structure of these films is playing a very crucial role and demands a fundamental understanding prior to device fabrication. We have investigated the electronic structure of La0.7Ca0.3Mn1−XAlXO3 (X=0, 0.15) epitaxial thin films by soft X-ray absorption spectroscopy technique using the surface sensitive total electron yield (TEY) mode.
{"title":"Soft X-ray absorption spectroscopy of La0.7Ca0.3Mn1−XAlXO3 thin films","authors":"Manish Kumar, R. Choudhary, D. Phase","doi":"10.1063/1.4872695","DOIUrl":"https://doi.org/10.1063/1.4872695","url":null,"abstract":"Epitaxial thin films of rare earth manganites have generated much attention recently due to their rich phase diagram. The electronic structure of these films is playing a very crucial role and demands a fundamental understanding prior to device fabrication. We have investigated the electronic structure of La0.7Ca0.3Mn1−XAlXO3 (X=0, 0.15) epitaxial thin films by soft X-ray absorption spectroscopy technique using the surface sensitive total electron yield (TEY) mode.","PeriodicalId":16850,"journal":{"name":"Journal of Physics C: Solid State Physics","volume":"33 1","pages":"620-621"},"PeriodicalIF":0.0,"publicationDate":"2014-04-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87946618","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
In single layer graphene, the recently predicted anomalous Rabi frequency varies linearly with the intensity of applied pump field whereas in bilayer graphene it is proportional to the square of the intensity. In bilayer graphene, when the trigonal warping effect is taken in to account, the anomalous Rabi frequency shows a non-trivial minimum (versus intensity) in addition to the trivial minimum at origin. This non-trivial minimum occurs at the value of intensity of the applied field which corresponds to 2 times the value of the momentum where the leg pockets of the Fermi surface develops, described in a pioneering work of E. McCann et al. [Eup. Phys. J. Special Topics 148, 91 (2007)]. Thereafter the anomalous Rabi frequency varies linearly with the intensity of applied field.
{"title":"Effect of trigonal warping on anomalous Rabi oscillations in graphene bilayer","authors":"Vipin Kumar, Enamullah, G. Setlur","doi":"10.1063/1.4872975","DOIUrl":"https://doi.org/10.1063/1.4872975","url":null,"abstract":"In single layer graphene, the recently predicted anomalous Rabi frequency varies linearly with the intensity of applied pump field whereas in bilayer graphene it is proportional to the square of the intensity. In bilayer graphene, when the trigonal warping effect is taken in to account, the anomalous Rabi frequency shows a non-trivial minimum (versus intensity) in addition to the trivial minimum at origin. This non-trivial minimum occurs at the value of intensity of the applied field which corresponds to 2 times the value of the momentum where the leg pockets of the Fermi surface develops, described in a pioneering work of E. McCann et al. [Eup. Phys. J. Special Topics 148, 91 (2007)]. Thereafter the anomalous Rabi frequency varies linearly with the intensity of applied field.","PeriodicalId":16850,"journal":{"name":"Journal of Physics C: Solid State Physics","volume":"255 1","pages":"1406-1407"},"PeriodicalIF":0.0,"publicationDate":"2014-04-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73237820","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A. Upadhyay, Rishikesh Pandey, Shashwat Anand, A. Singh
We present here the structural studies on (1−x)Bi(Mg1/2Ti1/2)O3−xPbTiO3 (BMT-xPT) piezoceramics with x=0.28, 0.37 and 0.45 using powder x-ray diffraction data. Rietveld refinement of powder x-ray diffraction data reveals the tetragonal structure (space group P4mm) for the compositions with x>0.40 and rhombohedral (space group R3m) for the compositions with x<0.30 of BMT-xPT ceramics. The morphotropic phase boundary is found for the intermediate composition with 0.30
{"title":"Synthesis and structural studies on (1−x)Bi(Mg1/2Ti1/2)O3−xPbTiO3 piezoceramics","authors":"A. Upadhyay, Rishikesh Pandey, Shashwat Anand, A. Singh","doi":"10.1063/1.4872497","DOIUrl":"https://doi.org/10.1063/1.4872497","url":null,"abstract":"We present here the structural studies on (1−x)Bi(Mg1/2Ti1/2)O3−xPbTiO3 (BMT-xPT) piezoceramics with x=0.28, 0.37 and 0.45 using powder x-ray diffraction data. Rietveld refinement of powder x-ray diffraction data reveals the tetragonal structure (space group P4mm) for the compositions with x>0.40 and rhombohedral (space group R3m) for the compositions with x<0.30 of BMT-xPT ceramics. The morphotropic phase boundary is found for the intermediate composition with 0.30","PeriodicalId":16850,"journal":{"name":"Journal of Physics C: Solid State Physics","volume":"22 1","pages":"79-80"},"PeriodicalIF":0.0,"publicationDate":"2014-04-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74533384","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
ZnO nanopowders doped with sulphur were prepared by sonochemical method. The input power of ultrasound was varied as 40%, 50% and 60% of the maximum power (375 W) in both continuous and pulsed mode. XRD results show the average size of the nanoparticles is the least for those prepared with 50% input power as well as the micro-strain. FESEM studies showed the formation of nanorods clubbed together to form flower like structure for these samples. In rest of the cases, no definite morphology was obtained. High resolution transmission electron microscopy (HRTEM) reveals the formation of nanorods oriented along c-axis for those samples prepared with 50% input power. No cavitation at 40% and excessive dissolution at 60% may lead to this type of morphology. Absorption studies showed high absorbance for sulphur doped samples but this was highest for the samples prepared with 60% input power.
{"title":"Role of sonic energy on growth morphology and optical properties of ZnO:S nanostructures","authors":"N. Panda, B. S. Acharya, P. Nayak","doi":"10.1063/1.4872569","DOIUrl":"https://doi.org/10.1063/1.4872569","url":null,"abstract":"ZnO nanopowders doped with sulphur were prepared by sonochemical method. The input power of ultrasound was varied as 40%, 50% and 60% of the maximum power (375 W) in both continuous and pulsed mode. XRD results show the average size of the nanoparticles is the least for those prepared with 50% input power as well as the micro-strain. FESEM studies showed the formation of nanorods clubbed together to form flower like structure for these samples. In rest of the cases, no definite morphology was obtained. High resolution transmission electron microscopy (HRTEM) reveals the formation of nanorods oriented along c-axis for those samples prepared with 50% input power. No cavitation at 40% and excessive dissolution at 60% may lead to this type of morphology. Absorption studies showed high absorbance for sulphur doped samples but this was highest for the samples prepared with 60% input power.","PeriodicalId":16850,"journal":{"name":"Journal of Physics C: Solid State Physics","volume":"1 1","pages":"270-272"},"PeriodicalIF":0.0,"publicationDate":"2014-04-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85574129","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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