Pub Date : 2013-01-01DOI: 10.1016/B978-0-12-408130-7.00001-0
K. Uchida, H. Adachi, Y. Kajiwara, S. Maekawa, E. Saitoh
{"title":"Spin-Wave Spin Current in Magnetic Insulators","authors":"K. Uchida, H. Adachi, Y. Kajiwara, S. Maekawa, E. Saitoh","doi":"10.1016/B978-0-12-408130-7.00001-0","DOIUrl":"https://doi.org/10.1016/B978-0-12-408130-7.00001-0","url":null,"abstract":"","PeriodicalId":16850,"journal":{"name":"Journal of Physics C: Solid State Physics","volume":"1 1","pages":"1-27"},"PeriodicalIF":0.0,"publicationDate":"2013-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82312874","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-01-01DOI: 10.1016/B978-0-12-408130-7.00004-6
O. Dzyapko, H. Kurebayashi, V. Demidov, S. Demokritov
{"title":"Control of Pure Spin Current by Magnon Tunneling and Three-Magnon Splitting in Insulating Yttrium Iron Garnet Films","authors":"O. Dzyapko, H. Kurebayashi, V. Demidov, S. Demokritov","doi":"10.1016/B978-0-12-408130-7.00004-6","DOIUrl":"https://doi.org/10.1016/B978-0-12-408130-7.00004-6","url":null,"abstract":"","PeriodicalId":16850,"journal":{"name":"Journal of Physics C: Solid State Physics","volume":"12 1","pages":"83-122"},"PeriodicalIF":0.0,"publicationDate":"2013-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87320942","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-01-01DOI: 10.1016/B978-0-12-408130-7.00009-5
Yajie Chen, V. Harris
{"title":"Impact of Structural and Magnetic Anisotropies on Microwave Ferrites","authors":"Yajie Chen, V. Harris","doi":"10.1016/B978-0-12-408130-7.00009-5","DOIUrl":"https://doi.org/10.1016/B978-0-12-408130-7.00009-5","url":null,"abstract":"","PeriodicalId":16850,"journal":{"name":"Journal of Physics C: Solid State Physics","volume":"33 1","pages":"331-347"},"PeriodicalIF":0.0,"publicationDate":"2013-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90302017","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-01-01DOI: 10.1016/B978-0-12-408130-7.00003-4
Ssu-Yen Huang, D. Qu, C. Chien
{"title":"Chapter Three - Charge, Spin, and Heat Transport in the Proximity of Metal/Ferromagnet Interface","authors":"Ssu-Yen Huang, D. Qu, C. Chien","doi":"10.1016/B978-0-12-408130-7.00003-4","DOIUrl":"https://doi.org/10.1016/B978-0-12-408130-7.00003-4","url":null,"abstract":"","PeriodicalId":16850,"journal":{"name":"Journal of Physics C: Solid State Physics","volume":"4 1","pages":"53-82"},"PeriodicalIF":0.0,"publicationDate":"2013-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83702879","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-01-01DOI: 10.1016/B978-0-12-408130-7.00005-8
M. Weiler, G. Woltersdorf, M. Althammer, H. Huebl, S. Goennenwein
{"title":"Chapter Five - Spin Pumping and Spin Currents in Magnetic Insulators","authors":"M. Weiler, G. Woltersdorf, M. Althammer, H. Huebl, S. Goennenwein","doi":"10.1016/B978-0-12-408130-7.00005-8","DOIUrl":"https://doi.org/10.1016/B978-0-12-408130-7.00005-8","url":null,"abstract":"","PeriodicalId":16850,"journal":{"name":"Journal of Physics C: Solid State Physics","volume":"1 1","pages":"123-156"},"PeriodicalIF":0.0,"publicationDate":"2013-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87389542","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Resistance switching properties of nanostructured In2O3 films grown on Pt bottom electrode have been investigated for non volatile memory applications. Ag/In2O3/Pt/Ti/SiO2/Si heterostructures were fabricated by pulsed laser deposition and e-beam evaporation techniques. Polycrystalline growth of oxides In2O3 was confirmed by grazing incidence X-ray diffraction, where as AFM show nanostructured growth with smooth surface morphology. Two terminal I-V characteristics showed reproducible hysteresis with a sharp resistive switching, suggesting two distinct resistance states in the film and bipolar type switching. Typical resistance switching ratio (Ron/Roff) of the order of 72% has been estimated at room temperature. The mechanism of the observed resistance switching is analyzed by space charge limited current (SCLS) and the Schottky-like barrier formation at Ag/In2O3 interface in the off states, where as, Pool-Frankel type conduction mechanism seems valid in the on state.
{"title":"Resistive switching of Ag/In2O3/Pt heterostructures for non volatile memory applications","authors":"B. V. Mistry, U. Joshi, R. Pinto","doi":"10.1063/1.4710218","DOIUrl":"https://doi.org/10.1063/1.4710218","url":null,"abstract":"Resistance switching properties of nanostructured In2O3 films grown on Pt bottom electrode have been investigated for non volatile memory applications. Ag/In2O3/Pt/Ti/SiO2/Si heterostructures were fabricated by pulsed laser deposition and e-beam evaporation techniques. Polycrystalline growth of oxides In2O3 was confirmed by grazing incidence X-ray diffraction, where as AFM show nanostructured growth with smooth surface morphology. Two terminal I-V characteristics showed reproducible hysteresis with a sharp resistive switching, suggesting two distinct resistance states in the film and bipolar type switching. Typical resistance switching ratio (Ron/Roff) of the order of 72% has been estimated at room temperature. The mechanism of the observed resistance switching is analyzed by space charge limited current (SCLS) and the Schottky-like barrier formation at Ag/In2O3 interface in the off states, where as, Pool-Frankel type conduction mechanism seems valid in the on state.","PeriodicalId":16850,"journal":{"name":"Journal of Physics C: Solid State Physics","volume":"50 1","pages":"745-746"},"PeriodicalIF":0.0,"publicationDate":"2012-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75374892","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Nanocrystalline lithium fluoride (LiF) phosphors prepared by the chemical co-precipitation method at 8.00 pH value have been activated with Eu (0.01, 0.03, 0.07 and 0.1%nt;) as single dopants. The formation of nanocrystalline structure has been confirmed by X-ray diffraction. Thermolumniscence (TL) properties of LiF: Eu nano-phosphors irradiated with gamma rays at different doses of 100 Gy − 10 kGy have been further studied. There is only one main glow peak at around 122°C; which shifts to higher temperature with an increase in doping concentration at all studied irradiation doses. However, the glow peak shifts to lower temperature with an increase in irradiation dose from 100 Gy to 10 kGy. The LiF nano-crystallites synthesized at 8.00 pH and activated with 0.03%nt; Eu are found to have maximum TL sensitivity at studied gamma doses.
{"title":"Thermoluminescence of Eu activated LiF nanophosphors","authors":"Satinder Kumar, A. Sharma, S. Lochab, Ravi Kumar","doi":"10.1063/1.4710042","DOIUrl":"https://doi.org/10.1063/1.4710042","url":null,"abstract":"Nanocrystalline lithium fluoride (LiF) phosphors prepared by the chemical co-precipitation method at 8.00 pH value have been activated with Eu (0.01, 0.03, 0.07 and 0.1%nt;) as single dopants. The formation of nanocrystalline structure has been confirmed by X-ray diffraction. Thermolumniscence (TL) properties of LiF: Eu nano-phosphors irradiated with gamma rays at different doses of 100 Gy − 10 kGy have been further studied. There is only one main glow peak at around 122°C; which shifts to higher temperature with an increase in doping concentration at all studied irradiation doses. However, the glow peak shifts to lower temperature with an increase in irradiation dose from 100 Gy to 10 kGy. The LiF nano-crystallites synthesized at 8.00 pH and activated with 0.03%nt; Eu are found to have maximum TL sensitivity at studied gamma doses.","PeriodicalId":16850,"journal":{"name":"Journal of Physics C: Solid State Physics","volume":"63 1","pages":"387-388"},"PeriodicalIF":0.0,"publicationDate":"2012-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83650336","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
M. Goswami, Rakesh Kumar, A. Patil, A. K. Sahu, G. Kothiyal
BaO-CaO-Al2O3-(10-x)B2O3-xCr2O3 SiO2 (BCABS), where 1.0 ≤x ≤ 3.5, (mol%) glasses were prepared by melt-quench technique. Glass samples were characterized for density, microhardness, thermal expansion coefficient and glass transition temperature. Scanning electron microscopy was used to see the homogeneity/solubility of Cr2O3 in this glass system. UV-VIS absorption measurements were carried out to see the Cr speciation in the glass samples. Density values were found to vary from 3.97 to 3.92 g/cc and microhardness values varied from 283 to 503 kg/mm2. Glass transition temperature increased from 635 to 671°C while TEC value found to varies from 8.3 to 11.1×10−6/°C(30-300) with Cr2O3 content. SEM study revealed phase separation in these glasses. From absorption studies we infer the presence of small amount of Cr (VI) along with Cr(III) oxidation state.
{"title":"Effect of Cr2O3 on solubility and thermo-physical properties of BaO-CaO-Al2O3-B2O3-SiO2 g","authors":"M. Goswami, Rakesh Kumar, A. Patil, A. K. Sahu, G. Kothiyal","doi":"10.1063/1.4710151","DOIUrl":"https://doi.org/10.1063/1.4710151","url":null,"abstract":"BaO-CaO-Al2O3-(10-x)B2O3-xCr2O3 SiO2 (BCABS), where 1.0 ≤x ≤ 3.5, (mol%) glasses were prepared by melt-quench technique. Glass samples were characterized for density, microhardness, thermal expansion coefficient and glass transition temperature. Scanning electron microscopy was used to see the homogeneity/solubility of Cr2O3 in this glass system. UV-VIS absorption measurements were carried out to see the Cr speciation in the glass samples. Density values were found to vary from 3.97 to 3.92 g/cc and microhardness values varied from 283 to 503 kg/mm2. Glass transition temperature increased from 635 to 671°C while TEC value found to varies from 8.3 to 11.1×10−6/°C(30-300) with Cr2O3 content. SEM study revealed phase separation in these glasses. From absorption studies we infer the presence of small amount of Cr (VI) along with Cr(III) oxidation state.","PeriodicalId":16850,"journal":{"name":"Journal of Physics C: Solid State Physics","volume":"11 1","pages":"609-610"},"PeriodicalIF":0.0,"publicationDate":"2012-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79637605","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
In this experiment we show the measurement of electronic spin polarization in bulk GaAs using a sensitive rf coil. The basic idea was to excite the electrons from the valence band to the conduction band using a circularly polarized laser. Due to the strong spin orbit coupling in the valence band, a part of the angular momentum of the circularly polarized light is transferred to the electron which allows the excited electron to be spin polarized to certain degree of efficiency, for e.g. 50% for GaAs. The spin of the excited electron decays with a lifetime of about 50ps at 300K. In steady state, for a pump intensity of 100mW at 850nm, a spin polarization density of ∼107 can be achieved in GaAs. These polarized electrons produces a weak magnetization, which was modulated at a frequency of ∼1.8MHz. This generates a varying magnetic field which was detected by a sensitive rf coil of Q-factor ∼33.
{"title":"Electronic spin detection and measurement of spin lifetime in bulk GaAs at room temperature using a highly sensitive radio frequency coil","authors":"C. Guite, V. Venkataraman","doi":"10.1063/1.4710368","DOIUrl":"https://doi.org/10.1063/1.4710368","url":null,"abstract":"In this experiment we show the measurement of electronic spin polarization in bulk GaAs using a sensitive rf coil. The basic idea was to excite the electrons from the valence band to the conduction band using a circularly polarized laser. Due to the strong spin orbit coupling in the valence band, a part of the angular momentum of the circularly polarized light is transferred to the electron which allows the excited electron to be spin polarized to certain degree of efficiency, for e.g. 50% for GaAs. The spin of the excited electron decays with a lifetime of about 50ps at 300K. In steady state, for a pump intensity of 100mW at 850nm, a spin polarization density of ∼107 can be achieved in GaAs. These polarized electrons produces a weak magnetization, which was modulated at a frequency of ∼1.8MHz. This generates a varying magnetic field which was detected by a sensitive rf coil of Q-factor ∼33.","PeriodicalId":16850,"journal":{"name":"Journal of Physics C: Solid State Physics","volume":"21 1","pages":"1053-1054"},"PeriodicalIF":0.0,"publicationDate":"2012-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74904297","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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