{"title":"Defect species in Ga-doped ZnO films characterized by photoluminescence","authors":"H. Akazawa","doi":"10.1116/6.0000937","DOIUrl":"https://doi.org/10.1116/6.0000937","url":null,"abstract":"","PeriodicalId":17571,"journal":{"name":"Journal of Vacuum Science and Technology","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2021-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84172780","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Jeonggoo Kim, M. Strikovski, Steve Garrahan, Richard Mozelack, J. E. Parkinson, Solomon H. Kolagani
A novel in situ diagnostic, scanning low-angle x-ray spectroscopy, has been introduced for compositional mapping of combinatorial thin film libraries. The technique uses high-energy electron beam-generated characteristic x rays from the films as they are deposited. The x-ray intensities are acquired dynamically, layer by layer at different film thicknesses, processed, and analyzed by Neocera-developed software using a unique algorithm. A fully automated four-axis mechanical stage facilitates data acquisition from a 2-in. diameter wafer providing a comprehensive compositional map across the wafer. A ternary materials library of Zn-Ti-Cr oxide has been deposited by continuous composition spread pulsed laser deposition to demonstrate the novel application of scanning low-angle x-ray spectroscopy for compositional mapping in situ. This in situ feedback on composition across the wafer significantly enhances the capability of any physical vapor deposition technique used for depositing combinatorial libraries, by providing compositional feedback during growth as well as the ability to monitor and control deposition processes for composition optimizations.
{"title":"In situ compositional mapping of combinatorial materials libraries by scanning low-angle x-ray spectroscopy","authors":"Jeonggoo Kim, M. Strikovski, Steve Garrahan, Richard Mozelack, J. E. Parkinson, Solomon H. Kolagani","doi":"10.1116/6.0000862","DOIUrl":"https://doi.org/10.1116/6.0000862","url":null,"abstract":"A novel in situ diagnostic, scanning low-angle x-ray spectroscopy, has been introduced for compositional mapping of combinatorial thin film libraries. The technique uses high-energy electron beam-generated characteristic x rays from the films as they are deposited. The x-ray intensities are acquired dynamically, layer by layer at different film thicknesses, processed, and analyzed by Neocera-developed software using a unique algorithm. A fully automated four-axis mechanical stage facilitates data acquisition from a 2-in. diameter wafer providing a comprehensive compositional map across the wafer. A ternary materials library of Zn-Ti-Cr oxide has been deposited by continuous composition spread pulsed laser deposition to demonstrate the novel application of scanning low-angle x-ray spectroscopy for compositional mapping in situ. This in situ feedback on composition across the wafer significantly enhances the capability of any physical vapor deposition technique used for depositing combinatorial libraries, by providing compositional feedback during growth as well as the ability to monitor and control deposition processes for composition optimizations.","PeriodicalId":17571,"journal":{"name":"Journal of Vacuum Science and Technology","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2021-04-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88731131","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Luis C. Hernandez-Mainet, Guopeng Chen, A. Zangiabadi, A. Shen, M. Tamargo
The design, growth, and characterizations of ZnCdSe/ZnCdMgSe semiconductor multilayer quantum-well structures for two-color quantum-well infrared photodetectors (QWIPs) are reported. The energy band and quantum well states are computed in a ZnCdSe/ZnCdMgSe single quantum well for both infrared detection regions. The sample has been grown in a multichamber molecular beam epitaxy system. The good crystalline quality of sample and its lattice matching to the InP substrate are investigated by high-resolution x-ray diffraction and transmission electron microscopy analysis. These structural measurements also confirm the good agreement between the design and the grown structure. The band-to-band and interband transition energies are experimentally determined by photoluminescence and contactless electroreflectance, respectively. The intersubband absorption spectra are investigated by Fourier transform infrared spectroscopy at room temperature. This multilayer structure represents a significant technological validation of the capabilities and potential of InP-based II-VI materials for engineering two-color QWIP devices. This paper provides a detailed methodology for the growth and in-depth characterization of such a complex high precision multilayered structure.
{"title":"Growth and characterization of II-VI semiconductor multilayer quantum-well structures for two-color quantum well infrared photodetector applications","authors":"Luis C. Hernandez-Mainet, Guopeng Chen, A. Zangiabadi, A. Shen, M. Tamargo","doi":"10.1116/6.0000947","DOIUrl":"https://doi.org/10.1116/6.0000947","url":null,"abstract":"The design, growth, and characterizations of ZnCdSe/ZnCdMgSe semiconductor multilayer quantum-well structures for two-color quantum-well infrared photodetectors (QWIPs) are reported. The energy band and quantum well states are computed in a ZnCdSe/ZnCdMgSe single quantum well for both infrared detection regions. The sample has been grown in a multichamber molecular beam epitaxy system. The good crystalline quality of sample and its lattice matching to the InP substrate are investigated by high-resolution x-ray diffraction and transmission electron microscopy analysis. These structural measurements also confirm the good agreement between the design and the grown structure. The band-to-band and interband transition energies are experimentally determined by photoluminescence and contactless electroreflectance, respectively. The intersubband absorption spectra are investigated by Fourier transform infrared spectroscopy at room temperature. This multilayer structure represents a significant technological validation of the capabilities and potential of InP-based II-VI materials for engineering two-color QWIP devices. This paper provides a detailed methodology for the growth and in-depth characterization of such a complex high precision multilayered structure.","PeriodicalId":17571,"journal":{"name":"Journal of Vacuum Science and Technology","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2021-04-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84911491","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Bireswar Mandol, Neha Mahuli, K. Ohno, L. Scudder, S. Sarkar
Atomic layer deposition (ALD) of chromium oxide (Cr2O3) thin films is investigated in a custom built hot wall viscous flow reactor configuration at 300 °C. Chromium(III) 2,4-pentanedionate [Cr(acac)3] and ozone (O3) are employed as the metal and the oxygen sources, respectively. In situ quartz crystal microbalance (QCM) and ex situ x-ray reflectivity studies are utilized as the two complementary techniques to monitor the growth mechanism and self-limiting deposition chemistry during Cr2O3 ALD. In situ QCM studies reveal a negligible nucleation period on the previously grown Al-OH* terminated surface before revealing the perfectly linear growth mechanism at 300 °C. The saturated growth rate is found to be ca. 0.28 A/cycle. In addition, excessive O3 exposure also reveals an alternative, controlled, and spontaneous etching pathway of the growing film as a result of the partial surface oxidation of Cr2O3. The as-deposited thin films are found to exhibit a polycrystalline rhombohedral structure without any preferential orientation. X-ray photoelectron spectroscopy studies reveal uniform distribution of Cr and O throughout the stack of ca. 40 nm film with minimum C impurities. High resolution scans of Cr 2p core level also confirm the presence of Cr in the +3 oxidation state with the corresponding multiplet spectrum.
{"title":"Atomic layer deposition of chromium oxide—An interplay between deposition and etching","authors":"Bireswar Mandol, Neha Mahuli, K. Ohno, L. Scudder, S. Sarkar","doi":"10.1116/6.0000896","DOIUrl":"https://doi.org/10.1116/6.0000896","url":null,"abstract":"Atomic layer deposition (ALD) of chromium oxide (Cr2O3) thin films is investigated in a custom built hot wall viscous flow reactor configuration at 300 °C. Chromium(III) 2,4-pentanedionate [Cr(acac)3] and ozone (O3) are employed as the metal and the oxygen sources, respectively. In situ quartz crystal microbalance (QCM) and ex situ x-ray reflectivity studies are utilized as the two complementary techniques to monitor the growth mechanism and self-limiting deposition chemistry during Cr2O3 ALD. In situ QCM studies reveal a negligible nucleation period on the previously grown Al-OH* terminated surface before revealing the perfectly linear growth mechanism at 300 °C. The saturated growth rate is found to be ca. 0.28 A/cycle. In addition, excessive O3 exposure also reveals an alternative, controlled, and spontaneous etching pathway of the growing film as a result of the partial surface oxidation of Cr2O3. The as-deposited thin films are found to exhibit a polycrystalline rhombohedral structure without any preferential orientation. X-ray photoelectron spectroscopy studies reveal uniform distribution of Cr and O throughout the stack of ca. 40 nm film with minimum C impurities. High resolution scans of Cr 2p core level also confirm the presence of Cr in the +3 oxidation state with the corresponding multiplet spectrum.","PeriodicalId":17571,"journal":{"name":"Journal of Vacuum Science and Technology","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2021-04-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80380246","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Amanda A. Volk, Jung-Sik Kim, Jovenal D. Jamir, E. Dickey, G. Parsons
Molecular layer deposition and chemical vapor deposition are emerging and promising techniques for the incorporation of high-performance conductive polymers into high surface area devices, such as sintered tantalum anodes for electrolytic capacitors. Until recently, vapor-phase synthesis of poly(3,4-ethylenedioxythiophene) (PEDOT) has relied on solid reactants which require relatively high temperatures and complex dosing schemes for sequential layer-by-layer processes. This work introduces a facile and high-performing layer-by-layer oxidative molecular layer deposition (oMLD) scheme using the volatile liquid oxidant antimony(V) chloride (SbCl5) to deposit PEDOT thin films. Effects of reactor parameters on PEDOT film characteristics are described, and the necessary foundation for future studies aiming to understand the nucleation and growth of layer-by-layer oMLD PEDOT is detailed.
{"title":"Oxidative molecular layer deposition of PEDOT using volatile antimony(V) chloride oxidant","authors":"Amanda A. Volk, Jung-Sik Kim, Jovenal D. Jamir, E. Dickey, G. Parsons","doi":"10.1116/6.0000791","DOIUrl":"https://doi.org/10.1116/6.0000791","url":null,"abstract":"Molecular layer deposition and chemical vapor deposition are emerging and promising techniques for the incorporation of high-performance conductive polymers into high surface area devices, such as sintered tantalum anodes for electrolytic capacitors. Until recently, vapor-phase synthesis of poly(3,4-ethylenedioxythiophene) (PEDOT) has relied on solid reactants which require relatively high temperatures and complex dosing schemes for sequential layer-by-layer processes. This work introduces a facile and high-performing layer-by-layer oxidative molecular layer deposition (oMLD) scheme using the volatile liquid oxidant antimony(V) chloride (SbCl5) to deposit PEDOT thin films. Effects of reactor parameters on PEDOT film characteristics are described, and the necessary foundation for future studies aiming to understand the nucleation and growth of layer-by-layer oMLD PEDOT is detailed.","PeriodicalId":17571,"journal":{"name":"Journal of Vacuum Science and Technology","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2021-04-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77379406","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
BaTiO3 (BTO) is a highly promising material for the fabrication of electro-optic (EO) modulators due to the large effective Pockels coefficient of the material, particularly in an epitaxial form. It also has the added benefit of being readily integrated on a Si material platform via a SrTiO3 template. These two characteristics make epitaxial BTO ideal for use in next generation silicon photonics applications. Being a ferroelectric, BTO has a unique crystallographic direction in which the ferroelectric polarization points. For EO modulators, because the polarization direction controls the coupling between light and an external electric field, it is important to understand how different growth methods and subsequent processing affect the direction of the ferroelectric polarization. Certain electro-optic devices may require polarization to be in the plane of the film (in-plane switching liquid crystal devices), while other applications may require it to be normal to the plane of the film (Mach–Zehnder modulator). Here, we review the growth of epitaxial BTO on Si by a variety of deposition methods including molecular beam epitaxy, pulsed laser deposition, and RF sputtering. We summarize the resulting BTO film structure and quality based on the reported characterization results. We also discuss EO measurements of basic devices made from this material platform where such data are available.
{"title":"Epitaxial integration of BaTiO3 on Si for electro-optic applications","authors":"Wei-lian Guo, A. Posadas, A. Demkov","doi":"10.1116/6.0000923","DOIUrl":"https://doi.org/10.1116/6.0000923","url":null,"abstract":"BaTiO3 (BTO) is a highly promising material for the fabrication of electro-optic (EO) modulators due to the large effective Pockels coefficient of the material, particularly in an epitaxial form. It also has the added benefit of being readily integrated on a Si material platform via a SrTiO3 template. These two characteristics make epitaxial BTO ideal for use in next generation silicon photonics applications. Being a ferroelectric, BTO has a unique crystallographic direction in which the ferroelectric polarization points. For EO modulators, because the polarization direction controls the coupling between light and an external electric field, it is important to understand how different growth methods and subsequent processing affect the direction of the ferroelectric polarization. Certain electro-optic devices may require polarization to be in the plane of the film (in-plane switching liquid crystal devices), while other applications may require it to be normal to the plane of the film (Mach–Zehnder modulator). Here, we review the growth of epitaxial BTO on Si by a variety of deposition methods including molecular beam epitaxy, pulsed laser deposition, and RF sputtering. We summarize the resulting BTO film structure and quality based on the reported characterization results. We also discuss EO measurements of basic devices made from this material platform where such data are available.","PeriodicalId":17571,"journal":{"name":"Journal of Vacuum Science and Technology","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2021-04-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76982306","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Historically, dynamic secondary ion mass spectroscopy (D-SIMS) has been used to quantitatively monitor the depth distribution of species present in low concentrations in samples/devices. We are not aware of any manuscript that describes the use of time of flight–secondary ion mass spectroscopy (ToF-SIMS) to perform quantitative analysis of aluminum present at low concentrations in silicon carbide (SiC) wafer substrates. In this paper, we will show that ToF-SIMS is able to replicate D-SIMS analysis. However, analysis at the lowest concentrations requires the collection of more spectral images at each depth. Tables of sputtering rates and sputtering yields, in addition to relative sensitivity factors are provided. We also highlight the benefits of ToF-SIMS analysis.
{"title":"Quantitative depth profiling of Al in SiC using time of flight–secondary ion mass spectroscopy","authors":"V. Smentkowski, S. Goswami","doi":"10.1116/6.0000905","DOIUrl":"https://doi.org/10.1116/6.0000905","url":null,"abstract":"Historically, dynamic secondary ion mass spectroscopy (D-SIMS) has been used to quantitatively monitor the depth distribution of species present in low concentrations in samples/devices. We are not aware of any manuscript that describes the use of time of flight–secondary ion mass spectroscopy (ToF-SIMS) to perform quantitative analysis of aluminum present at low concentrations in silicon carbide (SiC) wafer substrates. In this paper, we will show that ToF-SIMS is able to replicate D-SIMS analysis. However, analysis at the lowest concentrations requires the collection of more spectral images at each depth. Tables of sputtering rates and sputtering yields, in addition to relative sensitivity factors are provided. We also highlight the benefits of ToF-SIMS analysis.","PeriodicalId":17571,"journal":{"name":"Journal of Vacuum Science and Technology","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2021-04-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73031185","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
α-Ga2O3, with an ultra-high energy bandgap of 5.1 eV, is an attractive material for applications in solar-blind photodetectors and high-power electronics. We fabricated an α-Ga2O3 metal-semiconductor-metal (MSM) interdigitated solar-blind photodetector, where an epitaxial α-Ga2O3 thin film was grown on a sapphire substrate using a hydride vapor-phase epitaxy technique. Excellent optoelectronic device properties including high responsivity (4.24 × 104 A/W), detectivity (1.77 × 1011 Jones), and external quantum efficiency (2.07 × 105) were demonstrated in response to ultraviolet (UV) C wavelength. Under sunlight, the α-Ga2O3 MSM photodetector exhibited stable solar-blind sensitivity to UVC wavelength without interference from the incoming solar spectrum. Our work proposes that α-Ga2O3 has great potential as a next-generation high-performance solar-blind photodetector.
{"title":"High responsivity solar-blind metal-semiconductor-metal photodetector based on α-Ga2O3","authors":"Jinho Bae, D. Jeon, Ji-Hyeon Park, Jihyun Kim","doi":"10.1116/6.0000940","DOIUrl":"https://doi.org/10.1116/6.0000940","url":null,"abstract":"α-Ga2O3, with an ultra-high energy bandgap of 5.1 eV, is an attractive material for applications in solar-blind photodetectors and high-power electronics. We fabricated an α-Ga2O3 metal-semiconductor-metal (MSM) interdigitated solar-blind photodetector, where an epitaxial α-Ga2O3 thin film was grown on a sapphire substrate using a hydride vapor-phase epitaxy technique. Excellent optoelectronic device properties including high responsivity (4.24 × 104 A/W), detectivity (1.77 × 1011 Jones), and external quantum efficiency (2.07 × 105) were demonstrated in response to ultraviolet (UV) C wavelength. Under sunlight, the α-Ga2O3 MSM photodetector exhibited stable solar-blind sensitivity to UVC wavelength without interference from the incoming solar spectrum. Our work proposes that α-Ga2O3 has great potential as a next-generation high-performance solar-blind photodetector.","PeriodicalId":17571,"journal":{"name":"Journal of Vacuum Science and Technology","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2021-04-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88565188","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Heterovalent structures consisting of group II-VI/group III-V compound semiconductors offer attractive properties, such as a very broad range of bandgaps, large conduction band offsets, high electron and hole mobilities, and quantum-material properties such as electric-field-induced topological insulator states. These properties and characteristics are highly desirable for many electronic and optoelectronic devices as well as potential condensed-matter quantum-physics applications. Here, we provide an overview of our recent studies of the MBE growth and characterization of zincblende II-VI/III-V heterostructures as well as several novel device applications based on different sets of these materials. By combining materials with small lattice mismatch, such as ZnTe/GaSb (Δa/a ∼ 0.13%), CdTe/InSb (Δa/a ∼ 0.05%), and ZnSe/GaAs (Δa/a ∼ 0.26%), epitaxial films of excellent crystallinity were grown once the growth conditions had been optimized. Cross-sectional observations using conventional and atomic-resolution electron microscopy revealed coherent interfaces and close to defect-free heterostructures. Measurements across CdTe/InSb interfaces indicated a limited amount (∼1.5 nm) of chemical intermixing. Results for ZnTe/GaSb distributed Bragg reflectors, CdTe/MgxCd1−xTe double heterostructures, and CdTe/InSb two-color photodetectors are briefly presented, and the growth of a rock salt/zincblende PbTe/CdTe/InSb heterostructure is also described.
{"title":"Heterovalent semiconductor structures and devices grown by molecular beam epitaxy","authors":"Yong-Hang Zhang, David J. Smith","doi":"10.1116/6.0000802","DOIUrl":"https://doi.org/10.1116/6.0000802","url":null,"abstract":"Heterovalent structures consisting of group II-VI/group III-V compound semiconductors offer attractive properties, such as a very broad range of bandgaps, large conduction band offsets, high electron and hole mobilities, and quantum-material properties such as electric-field-induced topological insulator states. These properties and characteristics are highly desirable for many electronic and optoelectronic devices as well as potential condensed-matter quantum-physics applications. Here, we provide an overview of our recent studies of the MBE growth and characterization of zincblende II-VI/III-V heterostructures as well as several novel device applications based on different sets of these materials. By combining materials with small lattice mismatch, such as ZnTe/GaSb (Δa/a ∼ 0.13%), CdTe/InSb (Δa/a ∼ 0.05%), and ZnSe/GaAs (Δa/a ∼ 0.26%), epitaxial films of excellent crystallinity were grown once the growth conditions had been optimized. Cross-sectional observations using conventional and atomic-resolution electron microscopy revealed coherent interfaces and close to defect-free heterostructures. Measurements across CdTe/InSb interfaces indicated a limited amount (∼1.5 nm) of chemical intermixing. Results for ZnTe/GaSb distributed Bragg reflectors, CdTe/MgxCd1−xTe double heterostructures, and CdTe/InSb two-color photodetectors are briefly presented, and the growth of a rock salt/zincblende PbTe/CdTe/InSb heterostructure is also described.","PeriodicalId":17571,"journal":{"name":"Journal of Vacuum Science and Technology","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2021-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83408192","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
M. G. Gusmão Cacho, K. Benotmane, A. Le Pennec, C. Bouet, P. Pimenta-Barros, G. Rademaker, M. Argoud, R. Tiron, N. Possémé
Directed self-assembly (DSA) of block copolymers is one of the most promising solutions investigated to obtain small and dense patterns for the sub-10 nm nodes. One of the most important aspects of the DSA technology is the orientation control of the block copolymer, which is determined by surface properties and different guiding techniques. Regarding the Arkema-CEA (ACE) chemoepitaxy process, one of the critical parameters is the preservation of the neutral layer’s properties during hydrofluoric acid wet etching, especially regarding its adherence to the titanium nitride (TiN) hard mask. In this paper, the different etching steps involved in the ACE integration flow are evaluated. Their effects on the surface properties of the TiN hard mask and on the adherence of the neutral layer are investigated by x-ray photoelectron spectroscopy and contact angle measurements. Finally, the results obtained are used to optimize the different etching steps, thus demonstrating the chemoepitaxy of a polystyrene-b-poly(methyl methacrylate) block copolymer with 32 nm pitch without alignment defects on a 100 μm2 surface.
{"title":"Study of plasma etching impact on chemoepitaxy directed self-assembly","authors":"M. G. Gusmão Cacho, K. Benotmane, A. Le Pennec, C. Bouet, P. Pimenta-Barros, G. Rademaker, M. Argoud, R. Tiron, N. Possémé","doi":"10.1116/6.0000850","DOIUrl":"https://doi.org/10.1116/6.0000850","url":null,"abstract":"Directed self-assembly (DSA) of block copolymers is one of the most promising solutions investigated to obtain small and dense patterns for the sub-10 nm nodes. One of the most important aspects of the DSA technology is the orientation control of the block copolymer, which is determined by surface properties and different guiding techniques. Regarding the Arkema-CEA (ACE) chemoepitaxy process, one of the critical parameters is the preservation of the neutral layer’s properties during hydrofluoric acid wet etching, especially regarding its adherence to the titanium nitride (TiN) hard mask. In this paper, the different etching steps involved in the ACE integration flow are evaluated. Their effects on the surface properties of the TiN hard mask and on the adherence of the neutral layer are investigated by x-ray photoelectron spectroscopy and contact angle measurements. Finally, the results obtained are used to optimize the different etching steps, thus demonstrating the chemoepitaxy of a polystyrene-b-poly(methyl methacrylate) block copolymer with 32 nm pitch without alignment defects on a 100 μm2 surface.","PeriodicalId":17571,"journal":{"name":"Journal of Vacuum Science and Technology","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2021-03-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86923171","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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