Pub Date : 2013-08-01DOI: 10.1109/NANO.2013.6720924
Shuangyun Ma, Ming Hu, Mingda Li, Jiran Liang, Changqing Li
A novel composite structure of WO3 nanowires/porous silicon has been successfully synthesized via a convenient thermal evaporation method without using any catalysts. The diameters and lengths of nanowires are 40-60 nm and 20-30 μm, respectively, and the aspect ratio (length/diameter) of nanowires could be in range of 500-750. The obtained products were investigated by scanning electron microscopy, transmission electron microscopy, and energy dispersive spectroscopy. The response to NO2 of WO3 nanowires/porous silicon composite was investigated. It was found that the composite sensor had a good response to NO2 at 50 °C. The lowest concentration of NO2 detected was 1ppm and the response could be up to 6.17 at NO2 concentration of 6 ppm. The novel composite structure improved sensing properties which are significant for future applications.
{"title":"Synthesis of tungsten oxide nanowires/porous silicon composite and its sensing properties for NO2","authors":"Shuangyun Ma, Ming Hu, Mingda Li, Jiran Liang, Changqing Li","doi":"10.1109/NANO.2013.6720924","DOIUrl":"https://doi.org/10.1109/NANO.2013.6720924","url":null,"abstract":"A novel composite structure of WO3 nanowires/porous silicon has been successfully synthesized via a convenient thermal evaporation method without using any catalysts. The diameters and lengths of nanowires are 40-60 nm and 20-30 μm, respectively, and the aspect ratio (length/diameter) of nanowires could be in range of 500-750. The obtained products were investigated by scanning electron microscopy, transmission electron microscopy, and energy dispersive spectroscopy. The response to NO2 of WO3 nanowires/porous silicon composite was investigated. It was found that the composite sensor had a good response to NO2 at 50 °C. The lowest concentration of NO2 detected was 1ppm and the response could be up to 6.17 at NO2 concentration of 6 ppm. The novel composite structure improved sensing properties which are significant for future applications.","PeriodicalId":189707,"journal":{"name":"2013 13th IEEE International Conference on Nanotechnology (IEEE-NANO 2013)","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133793155","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-08-01DOI: 10.1109/NANO.2013.6720840
S. Farhana, A. Alam, Sheroz Khan, S. Motakabber
The geometrical structure of carbon nanotubes has been calculated and analyzed in this paper. The analysis of carbon nanotube for Pz orbital, perpendicular to the graphene sheet and thus the nanotube surface forms a delocalized π network across the nanotube, which is responsible for its electronic properties. These electronic properties are obtained from tight binding (TB) model for graphene. Furthermore, optimized DFT calculation shows the optimum chiral of CNT, which is semiconducting zigzag for SWCNT and MWCNT.
{"title":"Modeling of optimum chiral carbon nanotube using DFT","authors":"S. Farhana, A. Alam, Sheroz Khan, S. Motakabber","doi":"10.1109/NANO.2013.6720840","DOIUrl":"https://doi.org/10.1109/NANO.2013.6720840","url":null,"abstract":"The geometrical structure of carbon nanotubes has been calculated and analyzed in this paper. The analysis of carbon nanotube for Pz orbital, perpendicular to the graphene sheet and thus the nanotube surface forms a delocalized π network across the nanotube, which is responsible for its electronic properties. These electronic properties are obtained from tight binding (TB) model for graphene. Furthermore, optimized DFT calculation shows the optimum chiral of CNT, which is semiconducting zigzag for SWCNT and MWCNT.","PeriodicalId":189707,"journal":{"name":"2013 13th IEEE International Conference on Nanotechnology (IEEE-NANO 2013)","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117325370","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-08-01DOI: 10.1109/NANO.2013.6720927
Poying Chen, J. Jiang, Y. Cheng, M. Dai, Y. Tzeng
Three-dimensional Integrated-circuit (3DIC) needs coatings with both high thermal conductivity and high electrical insulation for isolating electronic devices and interconnects while spreading heat generated by stacked integrated circuits effectively. Single crystalline diamond possesses excellent electrical insulation and thermal conductivity, which is a perfect candidate for the need by 3DIC. However, a large-area coating of single crystalline diamond is difficult to achieve. So we use polycrystalline diamond films instead. But for polycrystalline diamond films with many grain boundaries, the severe phonon scattering and electrically conductive graphitic carbon contents in grain boundaries cause the electrical insulation and the thermal conductivity to decrease. The smaller the grain size is, usually the decrease is more severe. A good compromise is to retain the high thermal conductivity of diamond crystals while minimizing the electrical conductivity of polycrystalline diamond coatings by removing the charge-transfer doping mechanism enabled by hydrogen termination on diamond grains and minimizing graphitic carbon in the grain boundaries. This paper reports a large-area tri-layer diamond coating structure to achieve sustainable 1010 Ωcm electrical resistivity in the ambient atmosphere. A nanodiamond base layer provides a high-density diamond seeding layer for the polycrystalline diamond film to contain few voids and graphitic carbon in the grain boundaries. The second nanodiamond film is used to encapsulate the de-hydrogenated microcrystalline diamond film to prevent degradation of electrical resistance due to the ambient atmosphere.
{"title":"High-electrical-resistivity CVD diamond films with tri-layer UNCD-MCD-UNCD structures for 3DIC applications","authors":"Poying Chen, J. Jiang, Y. Cheng, M. Dai, Y. Tzeng","doi":"10.1109/NANO.2013.6720927","DOIUrl":"https://doi.org/10.1109/NANO.2013.6720927","url":null,"abstract":"Three-dimensional Integrated-circuit (3DIC) needs coatings with both high thermal conductivity and high electrical insulation for isolating electronic devices and interconnects while spreading heat generated by stacked integrated circuits effectively. Single crystalline diamond possesses excellent electrical insulation and thermal conductivity, which is a perfect candidate for the need by 3DIC. However, a large-area coating of single crystalline diamond is difficult to achieve. So we use polycrystalline diamond films instead. But for polycrystalline diamond films with many grain boundaries, the severe phonon scattering and electrically conductive graphitic carbon contents in grain boundaries cause the electrical insulation and the thermal conductivity to decrease. The smaller the grain size is, usually the decrease is more severe. A good compromise is to retain the high thermal conductivity of diamond crystals while minimizing the electrical conductivity of polycrystalline diamond coatings by removing the charge-transfer doping mechanism enabled by hydrogen termination on diamond grains and minimizing graphitic carbon in the grain boundaries. This paper reports a large-area tri-layer diamond coating structure to achieve sustainable 1010 Ωcm electrical resistivity in the ambient atmosphere. A nanodiamond base layer provides a high-density diamond seeding layer for the polycrystalline diamond film to contain few voids and graphitic carbon in the grain boundaries. The second nanodiamond film is used to encapsulate the de-hydrogenated microcrystalline diamond film to prevent degradation of electrical resistance due to the ambient atmosphere.","PeriodicalId":189707,"journal":{"name":"2013 13th IEEE International Conference on Nanotechnology (IEEE-NANO 2013)","volume":"275 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115210934","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A novel type of thermoelectric generator device (TEGD) based on carbon nanotube (CNT) membrane is introduced to realize the self-powered function of nano/micro electromechanical systems (N/MEMS) in some special environments. The TEGD unit is composed of an n-type CNT membrane and a p-type one connected in series. When temperature gradient exists between both ends of the TEGD unit, electric potential difference will generate. The TEGD is formed through connecting several TEGD units in series to get enough electric power. In the paper, CNT membranes of the TEGD are synthesized by the chemical vapor deposition (CVD) method and the TEGD properties are researched in detail. Experimental results demonstrated that the TEGD has much use value and bright application prospect in the future.
{"title":"Thermoelectric generator device based on carbon nanotube membrane","authors":"Wenbin Huang, Guanglong Wang, Jianglei Lu, Fengqi Gao, Zhongtao Qiao, Lianfeng Sun","doi":"10.1109/NANO.2013.6721002","DOIUrl":"https://doi.org/10.1109/NANO.2013.6721002","url":null,"abstract":"A novel type of thermoelectric generator device (TEGD) based on carbon nanotube (CNT) membrane is introduced to realize the self-powered function of nano/micro electromechanical systems (N/MEMS) in some special environments. The TEGD unit is composed of an n-type CNT membrane and a p-type one connected in series. When temperature gradient exists between both ends of the TEGD unit, electric potential difference will generate. The TEGD is formed through connecting several TEGD units in series to get enough electric power. In the paper, CNT membranes of the TEGD are synthesized by the chemical vapor deposition (CVD) method and the TEGD properties are researched in detail. Experimental results demonstrated that the TEGD has much use value and bright application prospect in the future.","PeriodicalId":189707,"journal":{"name":"2013 13th IEEE International Conference on Nanotechnology (IEEE-NANO 2013)","volume":"81 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115708521","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-08-01DOI: 10.1109/NANO.2013.6721038
P. Marconcini
We numerically study the transport behavior of a graphene cavity delimited by two constrictions and divided into two dots by the tunnel barrier induced by the electrostatic action of a negatively biased gate. Performing an analysis, based on an envelope function approach, of the dependence of the conductance on the position of the tunnel barrier, we observe a maximum when the barrier is at the middle of the cavity, an effect similar, even though less pronounced, to that recently studied in devices based on semiconductor heterostructures.
{"title":"Influence of symmetry on the conductance of a graphene double dot","authors":"P. Marconcini","doi":"10.1109/NANO.2013.6721038","DOIUrl":"https://doi.org/10.1109/NANO.2013.6721038","url":null,"abstract":"We numerically study the transport behavior of a graphene cavity delimited by two constrictions and divided into two dots by the tunnel barrier induced by the electrostatic action of a negatively biased gate. Performing an analysis, based on an envelope function approach, of the dependence of the conductance on the position of the tunnel barrier, we observe a maximum when the barrier is at the middle of the cavity, an effect similar, even though less pronounced, to that recently studied in devices based on semiconductor heterostructures.","PeriodicalId":189707,"journal":{"name":"2013 13th IEEE International Conference on Nanotechnology (IEEE-NANO 2013)","volume":"48 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114591375","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-08-01DOI: 10.1109/NANO.2013.6720808
A. C. Fryer, A. Flewitt, C. Ramsdale
Self-switching diodes have been fabricated within a single layer of indium-gallium zinc oxide (IGZO). Current-voltage (I-V) measurements show the nanometer-scale asymmetric device gave a diode-like response. Full current rectification was achieved using very narrow channel widths of 50nm, with a turn-on voltage, Von, of 2.2V. The device did not breakdown within the -10V bias range measured. This single diode produced a current of 0.1μA at 10V and a reverse current of less than 0.1nA at -10V. Also by adjusting the channel width for these devices, Von could be altered; however, the effectiveness of the rectification also changed.
{"title":"DC current rectification using indium-gallium zinc oxide-based selfswitching diodes","authors":"A. C. Fryer, A. Flewitt, C. Ramsdale","doi":"10.1109/NANO.2013.6720808","DOIUrl":"https://doi.org/10.1109/NANO.2013.6720808","url":null,"abstract":"Self-switching diodes have been fabricated within a single layer of indium-gallium zinc oxide (IGZO). Current-voltage (I-V) measurements show the nanometer-scale asymmetric device gave a diode-like response. Full current rectification was achieved using very narrow channel widths of 50nm, with a turn-on voltage, Von, of 2.2V. The device did not breakdown within the -10V bias range measured. This single diode produced a current of 0.1μA at 10V and a reverse current of less than 0.1nA at -10V. Also by adjusting the channel width for these devices, Von could be altered; however, the effectiveness of the rectification also changed.","PeriodicalId":189707,"journal":{"name":"2013 13th IEEE International Conference on Nanotechnology (IEEE-NANO 2013)","volume":"84 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123270209","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-08-01DOI: 10.1109/NANO.2013.6720792
T. S. van den Heever, W. Perold, G. L. Hardie
A nanogenerator is developed using zinc oxide (ZnO) nanowires. Design of experiments is used to optimise the growth parameters of the ZnO nanowires, with an increase in output voltage set as the optimising parameter. After the optimisation of the nanowire growth, focus is shifted to the optimisation of the manufacturing of the nanogenerator. The nanowires are plasma treated and annealed right after growth, both methods increasing the output voltage. The last step in manufacturing is adding PMMA for stability and durability. Various materials are dispersed in the PMMA to further enhance the output voltage. Single walled carbon nanotubes and ZnO nanowires gave the biggest increase in output voltage. A nanogenerator manufactured with a combination of these optimisation techniques resulted in an output voltage of over 5 V, a ten-fold increase of output voltage.
{"title":"Development and optimisation of a zinc oxide nanogenerator","authors":"T. S. van den Heever, W. Perold, G. L. Hardie","doi":"10.1109/NANO.2013.6720792","DOIUrl":"https://doi.org/10.1109/NANO.2013.6720792","url":null,"abstract":"A nanogenerator is developed using zinc oxide (ZnO) nanowires. Design of experiments is used to optimise the growth parameters of the ZnO nanowires, with an increase in output voltage set as the optimising parameter. After the optimisation of the nanowire growth, focus is shifted to the optimisation of the manufacturing of the nanogenerator. The nanowires are plasma treated and annealed right after growth, both methods increasing the output voltage. The last step in manufacturing is adding PMMA for stability and durability. Various materials are dispersed in the PMMA to further enhance the output voltage. Single walled carbon nanotubes and ZnO nanowires gave the biggest increase in output voltage. A nanogenerator manufactured with a combination of these optimisation techniques resulted in an output voltage of over 5 V, a ten-fold increase of output voltage.","PeriodicalId":189707,"journal":{"name":"2013 13th IEEE International Conference on Nanotechnology (IEEE-NANO 2013)","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123503403","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-08-01DOI: 10.1109/NANO.2013.6720822
Hyunse Kim, Y. Lee, Euisu Lim
In this article, a 3 MHz near-field megasonic waveguide for nano-particle control was developed. In the design process, an impedance graph of the megasonic system with the piezoelectric actuator was obtained by analysis using finite element method (FEM) software ANSYS. After analysis, the maximum value of the anti-resonance frequency was obtained as 2997 kHz, which coincided with the design value. Additionally, acoustic pressure distribution of the system was predicted by FEM. After fabricating the waveguide using the analysis results, the system performance was assessed by measuring acoustic pressures. The maximum value and standard deviation of measured data were analyzed and compared with a conventional megasonic system to evaluate the system performance. As a result, the maximum value was decreased by 35.6%, and the standard deviation of the developed system was decreased by 10.4% compared to the conventional type both at the same average acoustic pressure. And to evaluate cleaning ability, the particle removal efficiency (PRE) test was performed with 80 nm particles. The PRE result showed that the system cleaned 93.1% particles. Considering these results, the developed megasonic system is thought to have an improved cleaning ability with more uniform acoustic pressures. These imply that the megasonic system can be applied to nano-particle cleaning process with higher energy efficiency and lower consumption of chemical and ultra pure water (UPW).
{"title":"Design, fabrication and performance test of a 3 MHz megasonic waveguide for nano-particle cleaning","authors":"Hyunse Kim, Y. Lee, Euisu Lim","doi":"10.1109/NANO.2013.6720822","DOIUrl":"https://doi.org/10.1109/NANO.2013.6720822","url":null,"abstract":"In this article, a 3 MHz near-field megasonic waveguide for nano-particle control was developed. In the design process, an impedance graph of the megasonic system with the piezoelectric actuator was obtained by analysis using finite element method (FEM) software ANSYS. After analysis, the maximum value of the anti-resonance frequency was obtained as 2997 kHz, which coincided with the design value. Additionally, acoustic pressure distribution of the system was predicted by FEM. After fabricating the waveguide using the analysis results, the system performance was assessed by measuring acoustic pressures. The maximum value and standard deviation of measured data were analyzed and compared with a conventional megasonic system to evaluate the system performance. As a result, the maximum value was decreased by 35.6%, and the standard deviation of the developed system was decreased by 10.4% compared to the conventional type both at the same average acoustic pressure. And to evaluate cleaning ability, the particle removal efficiency (PRE) test was performed with 80 nm particles. The PRE result showed that the system cleaned 93.1% particles. Considering these results, the developed megasonic system is thought to have an improved cleaning ability with more uniform acoustic pressures. These imply that the megasonic system can be applied to nano-particle cleaning process with higher energy efficiency and lower consumption of chemical and ultra pure water (UPW).","PeriodicalId":189707,"journal":{"name":"2013 13th IEEE International Conference on Nanotechnology (IEEE-NANO 2013)","volume":"49 14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122743650","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-08-01DOI: 10.1109/NANO.2013.6721017
Masaru Takeuchi, M. Nakajima, H. Tajima, T. Fukuda
In this paper, we developed the thermoresponsive gel probe (GeT probe) to conduct micro-nano manipulation under an optical microscope. We developed the GeT probe to use in the solution which is not containing thermoresponsive polymer. The fixation force by the probe was measured using an atomic force microscope (AFM) cantilever. The evaluation of the probe showed that the probe can generate almost the same fixation force in thermoresponsive polymer solution and in the pure water. The developed GeT probe has more than 50 μm tip size and it makes difficult to handle sub-micron objects. Therefore, the new fabrication procedure to miniaturize the probe tip was also proposed to manipulate nano-scale objects. The fabrication method has the potential to minimize the probe tip in sub-micron scale.
{"title":"Development of thermoresponsive gel probe for manipulation from micro to nano scale","authors":"Masaru Takeuchi, M. Nakajima, H. Tajima, T. Fukuda","doi":"10.1109/NANO.2013.6721017","DOIUrl":"https://doi.org/10.1109/NANO.2013.6721017","url":null,"abstract":"In this paper, we developed the thermoresponsive gel probe (GeT probe) to conduct micro-nano manipulation under an optical microscope. We developed the GeT probe to use in the solution which is not containing thermoresponsive polymer. The fixation force by the probe was measured using an atomic force microscope (AFM) cantilever. The evaluation of the probe showed that the probe can generate almost the same fixation force in thermoresponsive polymer solution and in the pure water. The developed GeT probe has more than 50 μm tip size and it makes difficult to handle sub-micron objects. Therefore, the new fabrication procedure to miniaturize the probe tip was also proposed to manipulate nano-scale objects. The fabrication method has the potential to minimize the probe tip in sub-micron scale.","PeriodicalId":189707,"journal":{"name":"2013 13th IEEE International Conference on Nanotechnology (IEEE-NANO 2013)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128843135","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-08-01DOI: 10.1109/NANO.2013.6720992
Seunghyun Lee, Kyu Han Kim, Yong-Jun Park, S. Jang
In this paper, previous experimental data of thermal conductivity and viscosity of water-based SiO2 nanofluids are summarized and the thermal performances of those nanofluids are assessed. As a criterion of thermal performance of nanofluids, the performance factor is defined under laminar flow condition. Moreover, to organize the experimental data in a consistent manner, the experimental data of thermal conductivities and viscosities of water-based SiO2 nanofluids are summarized in accordance with the data reduction methodology presented in this paper and those results are classified according to the SiO2 nanoparticle manufacturers. Based on the established criterion and summarized experimental database, the thermal performance of water-based SiO2 nanofluids is evaluated according to the nanoparticle manufacturers and their ranking is presented. As a result, it is expected that the results of this paper will be helpful to select proper SiO2 nanofluids in the practical applications.
{"title":"Evaluation of thermal performance for water-based SiO2 nanofluids","authors":"Seunghyun Lee, Kyu Han Kim, Yong-Jun Park, S. Jang","doi":"10.1109/NANO.2013.6720992","DOIUrl":"https://doi.org/10.1109/NANO.2013.6720992","url":null,"abstract":"In this paper, previous experimental data of thermal conductivity and viscosity of water-based SiO2 nanofluids are summarized and the thermal performances of those nanofluids are assessed. As a criterion of thermal performance of nanofluids, the performance factor is defined under laminar flow condition. Moreover, to organize the experimental data in a consistent manner, the experimental data of thermal conductivities and viscosities of water-based SiO2 nanofluids are summarized in accordance with the data reduction methodology presented in this paper and those results are classified according to the SiO2 nanoparticle manufacturers. Based on the established criterion and summarized experimental database, the thermal performance of water-based SiO2 nanofluids is evaluated according to the nanoparticle manufacturers and their ranking is presented. As a result, it is expected that the results of this paper will be helpful to select proper SiO2 nanofluids in the practical applications.","PeriodicalId":189707,"journal":{"name":"2013 13th IEEE International Conference on Nanotechnology (IEEE-NANO 2013)","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129443893","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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