Pub Date : 2013-08-01DOI: 10.1109/NANO.2013.6720911
S. Regonda, L. Spurgin, Walter Hu
We report the label-free rapid detection of single stranded DNA segments using lithographic Si nanograting (NG) FET devices coated with single stranded PNA probes. The NGFETs shows improved signal to noise ratio and similar sensitivity in comparison with the single nanowire FETs fabricated on the same chip. The limit of detection of our finFETs reaches sub-femtoMolar. The same devices do not respond significantly to high concentrations of non-complementary DNA segments.
{"title":"Ultrasensitive electronic detection of DNA using Si nanograting FETs coated with PNA probes","authors":"S. Regonda, L. Spurgin, Walter Hu","doi":"10.1109/NANO.2013.6720911","DOIUrl":"https://doi.org/10.1109/NANO.2013.6720911","url":null,"abstract":"We report the label-free rapid detection of single stranded DNA segments using lithographic Si nanograting (NG) FET devices coated with single stranded PNA probes. The NGFETs shows improved signal to noise ratio and similar sensitivity in comparison with the single nanowire FETs fabricated on the same chip. The limit of detection of our finFETs reaches sub-femtoMolar. The same devices do not respond significantly to high concentrations of non-complementary DNA segments.","PeriodicalId":189707,"journal":{"name":"2013 13th IEEE International Conference on Nanotechnology (IEEE-NANO 2013)","volume":"56 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116213782","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-08-01DOI: 10.1109/NANO.2013.6720956
Jiang-Yong Pan, Zaifa Zhou, Q. Gan, Wen-Qin Xu
The complex scattering process of the high-energy electron beams in resist is simulated by Monte Carlo method. The energy deposition distributions are presented under different exposure conditions. The three-dimensional (3-D) development profiles are obtained with the developing threshold model. It is found that, in the high energy range, higher electron beam energy, thinner resist, appropriate dose and lower substrate's atom number will cause lower proximity effect. Based on the simulations, we can explain the proximity effect and the dose control on proximity effect correction via the three-dimensional development profiles. The results will be useful to optimize the exposure conditions in electron beam lithography, and to provide more accurate data for proximity effect correction.
{"title":"Monte Carlo simulation of high-energy electron beam lithography process","authors":"Jiang-Yong Pan, Zaifa Zhou, Q. Gan, Wen-Qin Xu","doi":"10.1109/NANO.2013.6720956","DOIUrl":"https://doi.org/10.1109/NANO.2013.6720956","url":null,"abstract":"The complex scattering process of the high-energy electron beams in resist is simulated by Monte Carlo method. The energy deposition distributions are presented under different exposure conditions. The three-dimensional (3-D) development profiles are obtained with the developing threshold model. It is found that, in the high energy range, higher electron beam energy, thinner resist, appropriate dose and lower substrate's atom number will cause lower proximity effect. Based on the simulations, we can explain the proximity effect and the dose control on proximity effect correction via the three-dimensional development profiles. The results will be useful to optimize the exposure conditions in electron beam lithography, and to provide more accurate data for proximity effect correction.","PeriodicalId":189707,"journal":{"name":"2013 13th IEEE International Conference on Nanotechnology (IEEE-NANO 2013)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121196892","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-08-01DOI: 10.1109/NANO.2013.6721020
Yudong Luo, Yantao Shen, Jie Li
This paper presents our recent research efforts on creating a musical tuning enhanced in-vitro micro/nano palpation system that will help to intuitively and interactively identify (by hearing) the mechanical signature or bio-marker of multi-scale biological entities, including cells, embryos, tissues, and organs. This work takes the concept of acoustic stethoscope and applies it to intuitively understand clues between micro or nano mechanical properties change and pathology of biological entities through humans' multi-modal perception capabilities. During implementation, a developed highly sensitive micro-force sensor serves as “acoustic stethoscope” that be able to access the surface of biological entity and measures its mechanical properties and changes. These measurements are then converted into 88-key piano musical voices for hearing and identification in real time. Preliminary experimental results demonstrate the performance of the developed micro-force sensor and the musical tuning methodology, as well successful in-vitro micro palpation on the fruit vesicles. Our research is a major step towards a multi-modal, intuitive, and interactive system engineering approach for biomedical studies such as cellular pathology, tissue engineering, plant and animal physiology.
{"title":"Musical tuning enhanced in-vitro micro/nano palpation for multi-scale biological entities","authors":"Yudong Luo, Yantao Shen, Jie Li","doi":"10.1109/NANO.2013.6721020","DOIUrl":"https://doi.org/10.1109/NANO.2013.6721020","url":null,"abstract":"This paper presents our recent research efforts on creating a musical tuning enhanced in-vitro micro/nano palpation system that will help to intuitively and interactively identify (by hearing) the mechanical signature or bio-marker of multi-scale biological entities, including cells, embryos, tissues, and organs. This work takes the concept of acoustic stethoscope and applies it to intuitively understand clues between micro or nano mechanical properties change and pathology of biological entities through humans' multi-modal perception capabilities. During implementation, a developed highly sensitive micro-force sensor serves as “acoustic stethoscope” that be able to access the surface of biological entity and measures its mechanical properties and changes. These measurements are then converted into 88-key piano musical voices for hearing and identification in real time. Preliminary experimental results demonstrate the performance of the developed micro-force sensor and the musical tuning methodology, as well successful in-vitro micro palpation on the fruit vesicles. Our research is a major step towards a multi-modal, intuitive, and interactive system engineering approach for biomedical studies such as cellular pathology, tissue engineering, plant and animal physiology.","PeriodicalId":189707,"journal":{"name":"2013 13th IEEE International Conference on Nanotechnology (IEEE-NANO 2013)","volume":"48 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116726750","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-08-01DOI: 10.1109/NANO.2013.6720928
Y. Tan, D. Sun, B. Yang, Y. Gong, S. Yan, R. Du, H. L. Guo, W. Chen, X. Xing, G. Mo, Z. J. Chen, Q. Cai, Z. H. Wu, H. Y. Yu
The crystallization behavior of amorphous Ni-P nanoparticles produced by liquid pulsed-discharge was studied by using in situ high temperature XRD at beamline 4B9A of Beijing Synchrotron Radiation Facility. Transmission electron microscope (TEM) was used to observe the morphology and Inductively Coupled Plasma-Atomic Emission Spectrometry (ICP-AES) was used to analyze the chemical composition of the as-prepared Ni-P nanoparticles. TEM results show that the average size of the as-prepared nanoparticles is about 13.5 nm. ICP-AES identifies the Ni-P nanoparticles contain 13.16 wt. % (21.85 at. %) of P and 86.84 wt. % (78.15% at. %) of Ni. Eight XRD patterns were, respectively, collected at 300, 373, 473, 573, 673, 773, 873 and 973K under low-vacuum condition (0.1 Pa). XRD results show that the as-prepared Ni-P nanoparticles are amorphous, no peaks of crystalline phases can be observed until 573K. Afterwards, the crystallization of the amorphous phase undergoes the formation and decomposition of some metastable phases. Finally, the obtained stable phases are the bct Ni3P and fcc Ni cryatalline phases. Both are randomly distributed in the sample. The crystallization mechanisms of the as-prepared amorphous Ni-P nanoparticles has also been discussed at the end of this paper.
{"title":"In-situ crystallization study of amorphous Ni-P nanoparticles with high P content","authors":"Y. Tan, D. Sun, B. Yang, Y. Gong, S. Yan, R. Du, H. L. Guo, W. Chen, X. Xing, G. Mo, Z. J. Chen, Q. Cai, Z. H. Wu, H. Y. Yu","doi":"10.1109/NANO.2013.6720928","DOIUrl":"https://doi.org/10.1109/NANO.2013.6720928","url":null,"abstract":"The crystallization behavior of amorphous Ni-P nanoparticles produced by liquid pulsed-discharge was studied by using in situ high temperature XRD at beamline 4B9A of Beijing Synchrotron Radiation Facility. Transmission electron microscope (TEM) was used to observe the morphology and Inductively Coupled Plasma-Atomic Emission Spectrometry (ICP-AES) was used to analyze the chemical composition of the as-prepared Ni-P nanoparticles. TEM results show that the average size of the as-prepared nanoparticles is about 13.5 nm. ICP-AES identifies the Ni-P nanoparticles contain 13.16 wt. % (21.85 at. %) of P and 86.84 wt. % (78.15% at. %) of Ni. Eight XRD patterns were, respectively, collected at 300, 373, 473, 573, 673, 773, 873 and 973K under low-vacuum condition (0.1 Pa). XRD results show that the as-prepared Ni-P nanoparticles are amorphous, no peaks of crystalline phases can be observed until 573K. Afterwards, the crystallization of the amorphous phase undergoes the formation and decomposition of some metastable phases. Finally, the obtained stable phases are the bct Ni3P and fcc Ni cryatalline phases. Both are randomly distributed in the sample. The crystallization mechanisms of the as-prepared amorphous Ni-P nanoparticles has also been discussed at the end of this paper.","PeriodicalId":189707,"journal":{"name":"2013 13th IEEE International Conference on Nanotechnology (IEEE-NANO 2013)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125195571","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-08-01DOI: 10.1109/NANO.2013.6721024
E. Accastelli, G. Cappi, J. Buckley, T. Ernst, C. Guiducci
Field-effect transistors (FETs) with open gate structures such as Silicon Nanoribbons (SiNRs) are promising candidates to become general platforms for ultrasensitive, label-free and real-time detection of biochemical interactions on surface. This work proposes and demonstrates the viability of a solution for integrating Ag/AgCl reference electrodes with the microfluidics. A comparison between different polarization schemes is carried out with an analysis of the respective advantages and disadvantages.
{"title":"Comparison between front- and back-gating of Silicon Nanoribbons in real-time sensing experiments","authors":"E. Accastelli, G. Cappi, J. Buckley, T. Ernst, C. Guiducci","doi":"10.1109/NANO.2013.6721024","DOIUrl":"https://doi.org/10.1109/NANO.2013.6721024","url":null,"abstract":"Field-effect transistors (FETs) with open gate structures such as Silicon Nanoribbons (SiNRs) are promising candidates to become general platforms for ultrasensitive, label-free and real-time detection of biochemical interactions on surface. This work proposes and demonstrates the viability of a solution for integrating Ag/AgCl reference electrodes with the microfluidics. A comparison between different polarization schemes is carried out with an analysis of the respective advantages and disadvantages.","PeriodicalId":189707,"journal":{"name":"2013 13th IEEE International Conference on Nanotechnology (IEEE-NANO 2013)","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131583069","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-08-01DOI: 10.1109/NANO.2013.6720903
S. Ebschke, R. Poloczek, K. Kallis, H. Fiedler
An experimental research on a novelty method of creating monocrystalline Silicon-membranes by using nanoholes is shown in this paper. A Silicon-on-insulator (SOI) wafer is used as a substrate, whose buried oxide (BOX) demonstrates the sacrificial layer for creating the cavities and its top-silicon layer is used as the monocrystalline membrane. This new method uses electron-beam lithography to create oblong nanoholes (120nm*2μm). These holes provide the possibility of sealing the cavity via thermal annealing. This creates a cavity with a monocrystalline membrane. The membrane shows the advantage of a full CMOS integration. Furthermore, this is made only by using planar technology processes which are widely spread and an extra bonding process for sealing the membrane is not needed. Different tasks could also be applicable with this membrane (e.g. 3-D integration).
{"title":"Planar technology integration of monocrystalline Silicon-membranes using nanoholes","authors":"S. Ebschke, R. Poloczek, K. Kallis, H. Fiedler","doi":"10.1109/NANO.2013.6720903","DOIUrl":"https://doi.org/10.1109/NANO.2013.6720903","url":null,"abstract":"An experimental research on a novelty method of creating monocrystalline Silicon-membranes by using nanoholes is shown in this paper. A Silicon-on-insulator (SOI) wafer is used as a substrate, whose buried oxide (BOX) demonstrates the sacrificial layer for creating the cavities and its top-silicon layer is used as the monocrystalline membrane. This new method uses electron-beam lithography to create oblong nanoholes (120nm*2μm). These holes provide the possibility of sealing the cavity via thermal annealing. This creates a cavity with a monocrystalline membrane. The membrane shows the advantage of a full CMOS integration. Furthermore, this is made only by using planar technology processes which are widely spread and an extra bonding process for sealing the membrane is not needed. Different tasks could also be applicable with this membrane (e.g. 3-D integration).","PeriodicalId":189707,"journal":{"name":"2013 13th IEEE International Conference on Nanotechnology (IEEE-NANO 2013)","volume":"55 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116515561","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-08-01DOI: 10.1109/NANO.2013.6721061
Denvid Lau
The nanoindentation of epoxy-based material has been conducted successfully using SU-8 as an example. In such a small scale characterization, it is noticed that moisture has a little effect on the change of bulk material properties in terms of Young's modulus and hardness, probably due to hydrolysis. However, there is an observable change of SU-8 under the optical microscope when the specimens were moisture conditioned. Even though moisture has only a minimal effect on the bulk material properties, it results in a detrimental effect on the interface fracture energy eventually leading to a premature failure of the bonded system, causing a durability problem, which has been reported in various research studies. It is envisioned that the overall deterioration of SU-8 is originated from its interface when bonded with other materials.
{"title":"Moisture effects on nano-mechanical properties of epoxy-based materials","authors":"Denvid Lau","doi":"10.1109/NANO.2013.6721061","DOIUrl":"https://doi.org/10.1109/NANO.2013.6721061","url":null,"abstract":"The nanoindentation of epoxy-based material has been conducted successfully using SU-8 as an example. In such a small scale characterization, it is noticed that moisture has a little effect on the change of bulk material properties in terms of Young's modulus and hardness, probably due to hydrolysis. However, there is an observable change of SU-8 under the optical microscope when the specimens were moisture conditioned. Even though moisture has only a minimal effect on the bulk material properties, it results in a detrimental effect on the interface fracture energy eventually leading to a premature failure of the bonded system, causing a durability problem, which has been reported in various research studies. It is envisioned that the overall deterioration of SU-8 is originated from its interface when bonded with other materials.","PeriodicalId":189707,"journal":{"name":"2013 13th IEEE International Conference on Nanotechnology (IEEE-NANO 2013)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127929684","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-08-01DOI: 10.1109/NANO.2013.6721055
Chin-Yung Lu, Shiou-An Wang
At present, only the exhaustive synthesis algorithm can find all the optimal quantum Boolean circuits. It is more difficult to synthesize a more complicated quantum Boolean circuit. In this paper, we use the method of circuit bipartition to partition a more complicated quantum Boolean circuit into simpler circuits in order to reduce the difficulty of the more complicated quantum Boolean circuit synthesis. And find these partitioned quantum Boolean circuits by searched the database of quantum Boolean circuits according the method of the shortest path in the circuit. Finally, combine these partitioned circuits to become the more complicated quantum Boolean circuit. This approach can significantly reduce the synthesis complexity of a more complicated quantum Boolean circuit. We can see that the results are very close to the optimal circuits according to the experimental results of all the 3-variable reversible functions.
{"title":"The shortest path method for quantum Boolean circuits construction","authors":"Chin-Yung Lu, Shiou-An Wang","doi":"10.1109/NANO.2013.6721055","DOIUrl":"https://doi.org/10.1109/NANO.2013.6721055","url":null,"abstract":"At present, only the exhaustive synthesis algorithm can find all the optimal quantum Boolean circuits. It is more difficult to synthesize a more complicated quantum Boolean circuit. In this paper, we use the method of circuit bipartition to partition a more complicated quantum Boolean circuit into simpler circuits in order to reduce the difficulty of the more complicated quantum Boolean circuit synthesis. And find these partitioned quantum Boolean circuits by searched the database of quantum Boolean circuits according the method of the shortest path in the circuit. Finally, combine these partitioned circuits to become the more complicated quantum Boolean circuit. This approach can significantly reduce the synthesis complexity of a more complicated quantum Boolean circuit. We can see that the results are very close to the optimal circuits according to the experimental results of all the 3-variable reversible functions.","PeriodicalId":189707,"journal":{"name":"2013 13th IEEE International Conference on Nanotechnology (IEEE-NANO 2013)","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132787862","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-08-01DOI: 10.1109/NANO.2013.6720949
Li Wang, Xin Wang, Zitao Shi, R. Ma, Jian Liu, Z. Dong, Chen Zhang, Fei Lu, L. Lin, H Zhao, Albert Z. H. Wang, Yuhua Cheng
This paper reports a new scalable behavioral modeling technique for novel nano crossbar ESD protection structures using Verilog-A language. Accurate models for nano crossbar ESD protection structures with different sizes were developed, which were validated by circuit level simulation and transmission line pulsing ESD measurement.
{"title":"Scalable behavior modeling for nano crossbar ESD protection structures by Verilog-A","authors":"Li Wang, Xin Wang, Zitao Shi, R. Ma, Jian Liu, Z. Dong, Chen Zhang, Fei Lu, L. Lin, H Zhao, Albert Z. H. Wang, Yuhua Cheng","doi":"10.1109/NANO.2013.6720949","DOIUrl":"https://doi.org/10.1109/NANO.2013.6720949","url":null,"abstract":"This paper reports a new scalable behavioral modeling technique for novel nano crossbar ESD protection structures using Verilog-A language. Accurate models for nano crossbar ESD protection structures with different sizes were developed, which were validated by circuit level simulation and transmission line pulsing ESD measurement.","PeriodicalId":189707,"journal":{"name":"2013 13th IEEE International Conference on Nanotechnology (IEEE-NANO 2013)","volume":"71 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133718948","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-08-01DOI: 10.1109/NANO.2013.6720972
Yan Zhang, Ying Zhou, Jing-yu Fan, D. Jiang, Yifeng Fu, Shiwei Ma, Johan Liu
With the minimization development of electronic devices and products, nanotechnology and nanomaterials are widely applied in different fields of electronic packaging. Carbon nanotube (CNT) is an ideal material due to its excellent electrical and thermal conductivities. In the present paper, the application of CNT bundles as chip bumps was experimentally investigated. The electrical resistances of the CNT interconnects were measured, and the thermal and humidity test were conducted. In addition, the CNT forests on fine pitch copper lines under various environmental test conditions were observed to evaluate the stability.
{"title":"Experimental study on electrical properties and stability of CNT bumps in high density interconnects","authors":"Yan Zhang, Ying Zhou, Jing-yu Fan, D. Jiang, Yifeng Fu, Shiwei Ma, Johan Liu","doi":"10.1109/NANO.2013.6720972","DOIUrl":"https://doi.org/10.1109/NANO.2013.6720972","url":null,"abstract":"With the minimization development of electronic devices and products, nanotechnology and nanomaterials are widely applied in different fields of electronic packaging. Carbon nanotube (CNT) is an ideal material due to its excellent electrical and thermal conductivities. In the present paper, the application of CNT bundles as chip bumps was experimentally investigated. The electrical resistances of the CNT interconnects were measured, and the thermal and humidity test were conducted. In addition, the CNT forests on fine pitch copper lines under various environmental test conditions were observed to evaluate the stability.","PeriodicalId":189707,"journal":{"name":"2013 13th IEEE International Conference on Nanotechnology (IEEE-NANO 2013)","volume":"17 8","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131839501","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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