Pub Date : 2018-12-01DOI: 10.1109/CCEE.2018.8634480
A. B. Azzououm, A. Aissat, F. Benyettou, J. Vilcot
In order to attest the feasibility and the concept of great-quality III – V devices, we focus our actual work on the developming of a tandem dual-junction solar cell, including a GaAS1−xPx top cell and a Si bottom cell. A simulation study of the top cell was performed. The impact of GaAS1−xPx absorber layer thicknesses, the temperature, and P composition x on cell efficiency are evidenced. In these structures, a tunnel junction was needed to interconnecting both the bottom and top cell. We comparing the simulated performance of two tunnel junction structure and we will show that the use of the GaAs (n+)/GaAs (p+) tunnel junction improve the performance of the currentvoltage characteristics. An optimal efficiency of about 16.27% was obtained with a thickness of about 1–m, P fraction x=0.37 and a temperature of 285 K.
为了验证高质量III - V器件的可行性和概念，我们将实际工作重点放在串联双结太阳能电池的开发上，包括GaAS1−xPx顶部电池和Si底部电池。对顶槽进行了仿真研究。研究了GaAS1−xPx吸收层厚度、温度和P成分对电池效率的影响。在这些结构中，需要一个隧道连接点来连接底部和顶部细胞。我们比较了两种隧道结结构的模拟性能，我们将证明使用GaAs (n+)/GaAs (p+)隧道结改善了电流电压特性的性能。当膜厚约为1 m, P分数x=0.37，温度为285 K时，效率最高，约为16.27%。
{"title":"Optimization of GaAs 1-x Px/Si Tandem Dual-Junction Solar Cells","authors":"A. B. Azzououm, A. Aissat, F. Benyettou, J. Vilcot","doi":"10.1109/CCEE.2018.8634480","DOIUrl":"https://doi.org/10.1109/CCEE.2018.8634480","url":null,"abstract":"In order to attest the feasibility and the concept of great-quality III – V devices, we focus our actual work on the developming of a tandem dual-junction solar cell, including a GaAS<inf>1−x</inf>P<inf>x</inf> top cell and a Si bottom cell. A simulation study of the top cell was performed. The impact of GaAS<inf>1−x</inf>P<inf>x</inf> absorber layer thicknesses, the temperature, and P composition x on cell efficiency are evidenced. In these structures, a tunnel junction was needed to interconnecting both the bottom and top cell. We comparing the simulated performance of two tunnel junction structure and we will show that the use of the GaAs (n+)/GaAs (p+) tunnel junction improve the performance of the currentvoltage characteristics. An optimal efficiency of about 16.27% was obtained with a thickness of about 1–m, P fraction x=0.37 and a temperature of 285 K.","PeriodicalId":200936,"journal":{"name":"2018 International Conference on Communications and Electrical Engineering (ICCEE)","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116844374","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-12-01DOI: 10.1109/CCEE.2018.8634436
Yakhlef Malika, B. Sebti, B. Adel
The topic of the paper is to model simultaneously, the effect of frequency coupled with applied mechanical stresses, on the magnetic hysteresis of ferromagnetic sheets. The magneto-mechanical model to be exploited is deduced from the classical effective field intended by Sablik-Jiles-Atherthon (S.J.A.). The previous relationship has been adjusted by introducing the parameter which takes into account the internal reaction of the material subjected to external mechanical stress. The corresponding phenomenon is not considering in literature, it will be noted stress demagnetizing field. Different magnetic characteristics are plotted by applying the proposed model. Thus, the model is validated through extensive simulations and compared with ones obtained experimentally in literature. A reasonable trend has been reached.
{"title":"A Theoretical Characterization of the Coupling Effects of Frequency and Mechanical Stresses on the Magnetic Properties of the Ferromagnetic Material","authors":"Yakhlef Malika, B. Sebti, B. Adel","doi":"10.1109/CCEE.2018.8634436","DOIUrl":"https://doi.org/10.1109/CCEE.2018.8634436","url":null,"abstract":"The topic of the paper is to model simultaneously, the effect of frequency coupled with applied mechanical stresses, on the magnetic hysteresis of ferromagnetic sheets. The magneto-mechanical model to be exploited is deduced from the classical effective field intended by Sablik-Jiles-Atherthon (S.J.A.). The previous relationship has been adjusted by introducing the parameter which takes into account the internal reaction of the material subjected to external mechanical stress. The corresponding phenomenon is not considering in literature, it will be noted stress demagnetizing field. Different magnetic characteristics are plotted by applying the proposed model. Thus, the model is validated through extensive simulations and compared with ones obtained experimentally in literature. A reasonable trend has been reached.","PeriodicalId":200936,"journal":{"name":"2018 International Conference on Communications and Electrical Engineering (ICCEE)","volume":"157 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131446014","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-12-01DOI: 10.1109/CCEE.2018.8634498
Ajgou Riadh, S. Salim, Hettiri Massaoud, Guettal Lemya, Ghendir Said, Bessous Noureddine, Chemsa Ali
In this work, we have developed an improved approach for enhancing speech corrupted by additive white Gaussian noise. An efficient denoising approach based on singular value decomposition (SVD) and Savistky-golay filter is proposed to reduce the White Gaussian noise (WGN). In order to filter singular values (SV) that represent original speech signal, we have proposed an efficient threshold algorithm. The whole SV are extracted from Hankel matrices in the overlapping speech window frames. After selecting dominant SV by our efficient threshold, the inverse operation is performed to create the new Hankel matrices and regrouping frames to reconstruct the enhanced signal (original signal), the denoised signal is smoothed using the Savitzky-Golay filter. The proposed approach offers an improved performance of speech enhancement comparing with traditional methods in terms of Perceptual Evaluation of Speech Quality scores measure (PESQ) and segmental SNR (SegSNR). A good yield of the method is observed for the SNR values between −10 and 30 dB.
{"title":"Subspace Approach for Enhancing Speech based on SVD.","authors":"Ajgou Riadh, S. Salim, Hettiri Massaoud, Guettal Lemya, Ghendir Said, Bessous Noureddine, Chemsa Ali","doi":"10.1109/CCEE.2018.8634498","DOIUrl":"https://doi.org/10.1109/CCEE.2018.8634498","url":null,"abstract":"In this work, we have developed an improved approach for enhancing speech corrupted by additive white Gaussian noise. An efficient denoising approach based on singular value decomposition (SVD) and Savistky-golay filter is proposed to reduce the White Gaussian noise (WGN). In order to filter singular values (SV) that represent original speech signal, we have proposed an efficient threshold algorithm. The whole SV are extracted from Hankel matrices in the overlapping speech window frames. After selecting dominant SV by our efficient threshold, the inverse operation is performed to create the new Hankel matrices and regrouping frames to reconstruct the enhanced signal (original signal), the denoised signal is smoothed using the Savitzky-Golay filter. The proposed approach offers an improved performance of speech enhancement comparing with traditional methods in terms of Perceptual Evaluation of Speech Quality scores measure (PESQ) and segmental SNR (SegSNR). A good yield of the method is observed for the SNR values between −10 and 30 dB.","PeriodicalId":200936,"journal":{"name":"2018 International Conference on Communications and Electrical Engineering (ICCEE)","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128317122","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-12-01DOI: 10.1109/CCEE.2018.8634518
A. Boussoufa, M. Kidouche
This paper combines second order central difference discretization method with Extended Kalman Filter (EKF) in order to estimate the rotor speed and flux of a Doubly-Fed Induction Generator (DFIG). A second order discretization yields to a multistep numerical integration method which is known to have better accuracy than single step Euler method. Extended Kalman Filter (EKF) is widely used to estimate the dynamic states of nonlinear system. Usually, a 1st order discretization of the nonlinear system is used with Forward-Euler scheme to obtain a discrete state-space representation, however in this paper, we will combine a second order discretization schemes with EKF in an attempt to get a better estimation of the rotor speed and flux of a DFIG which is widely used in Wind Turbines (WTs). A DFIG modeling in the (dq) reference frame is presented and a description of proposed EKF algorithm is described to estimate the rotor speed and flux. Simulation results are shown and discussed
{"title":"Combining Second Order Central Difference Discretization with Extended Kalman Filter for Rotor Speed and Flux Estimation of a Doubly-fed Induction Generator","authors":"A. Boussoufa, M. Kidouche","doi":"10.1109/CCEE.2018.8634518","DOIUrl":"https://doi.org/10.1109/CCEE.2018.8634518","url":null,"abstract":"This paper combines second order central difference discretization method with Extended Kalman Filter (EKF) in order to estimate the rotor speed and flux of a Doubly-Fed Induction Generator (DFIG). A second order discretization yields to a multistep numerical integration method which is known to have better accuracy than single step Euler method. Extended Kalman Filter (EKF) is widely used to estimate the dynamic states of nonlinear system. Usually, a 1st order discretization of the nonlinear system is used with Forward-Euler scheme to obtain a discrete state-space representation, however in this paper, we will combine a second order discretization schemes with EKF in an attempt to get a better estimation of the rotor speed and flux of a DFIG which is widely used in Wind Turbines (WTs). A DFIG modeling in the (dq) reference frame is presented and a description of proposed EKF algorithm is described to estimate the rotor speed and flux. Simulation results are shown and discussed","PeriodicalId":200936,"journal":{"name":"2018 International Conference on Communications and Electrical Engineering (ICCEE)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127870212","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-12-01DOI: 10.1109/CCEE.2018.8634446
A. Sadoun, S. Mansouri, M. Chellali, A. Hima, Z. Benamara
In this paper is presented a theoretical study of effects of Hafnium dioxide on the electrical properties of (Pd/n-GaN) Schottky diode under a temperature of 300°K, using the forward bias I-V measurements. A simulation on the (Pd/n-GaN) and (Pd/HfO2/n-GaN) structure is presented, then simulation results are compared with experimental results. A well matching was found between simulations and experimental results. Barrier height (Φb), ideality factor (n) and series resistance (Rs) effects was also studied. In addition, (I-V), Norde, Cheung and Cheung, H(I) and G(I), Chattopadhyay and Mikhelashvili methods are used to extract different parameters. Obtained theoritical results are well matched with experimental measurements. The ATLAS module of SILVACO-TCAD software has been used in numeric simulations.
在300°K温度下，利用正偏I-V测量方法，研究了二氧化铪对(Pd/n-GaN)肖特基二极管电学性能的影响。对(Pd/n-GaN)和(Pd/HfO2/n-GaN)结构进行了仿真，并将仿真结果与实验结果进行了比较。模拟结果与实验结果吻合较好。还研究了屏障高度(Φb)、理想因子(n)和串联电阻(Rs)的影响。此外，还采用(I- v)、Norde、Cheung and Cheung、H(I) and G(I)、Chattopadhyay和Mikhelashvili方法提取不同参数。所得理论结果与实验结果吻合较好。利用SILVACO-TCAD软件中的ATLAS模块进行了数值模拟。
{"title":"The effect of introduction of HfO2 on the electrical characterization of the Pt/HfO2/n-GaN","authors":"A. Sadoun, S. Mansouri, M. Chellali, A. Hima, Z. Benamara","doi":"10.1109/CCEE.2018.8634446","DOIUrl":"https://doi.org/10.1109/CCEE.2018.8634446","url":null,"abstract":"In this paper is presented a theoretical study of effects of Hafnium dioxide on the electrical properties of (Pd/n-GaN) Schottky diode under a temperature of 300°K, using the forward bias I-V measurements. A simulation on the (Pd/n-GaN) and (Pd/HfO2/n-GaN) structure is presented, then simulation results are compared with experimental results. A well matching was found between simulations and experimental results. Barrier height (Φb), ideality factor (n) and series resistance (Rs) effects was also studied. In addition, (I-V), Norde, Cheung and Cheung, H(I) and G(I), Chattopadhyay and Mikhelashvili methods are used to extract different parameters. Obtained theoritical results are well matched with experimental measurements. The ATLAS module of SILVACO-TCAD software has been used in numeric simulations.","PeriodicalId":200936,"journal":{"name":"2018 International Conference on Communications and Electrical Engineering (ICCEE)","volume":"73 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127334471","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-12-01DOI: 10.1109/CCEE.2018.8634527
N. Tahir, M. Boudraa
This work addresses the issue related to the study of cosine function implementation using the principle of content addressable memory. This latter is very compatible for certain critical applications compared to the polynomial and the rational approximations as well as the Look up Table based solution. This implementation will be used in hamming window for computing Mel-frequency cepstral coefficients for speech recognition applications.
{"title":"Physical Implementation of Cosine Function Used in the Hamming Window","authors":"N. Tahir, M. Boudraa","doi":"10.1109/CCEE.2018.8634527","DOIUrl":"https://doi.org/10.1109/CCEE.2018.8634527","url":null,"abstract":"This work addresses the issue related to the study of cosine function implementation using the principle of content addressable memory. This latter is very compatible for certain critical applications compared to the polynomial and the rational approximations as well as the Look up Table based solution. This implementation will be used in hamming window for computing Mel-frequency cepstral coefficients for speech recognition applications.","PeriodicalId":200936,"journal":{"name":"2018 International Conference on Communications and Electrical Engineering (ICCEE)","volume":"2015 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128042405","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-12-01DOI: 10.1109/CCEE.2018.8634443
M. Khaouani, Z. Kourdi
Triangular GAA MOSFETs (gate-all-around metal oxide semiconductor) with III-V material in channel has been simulated by Atlas Tcad-Silvaco software, we has used for obtain DC, AC characteristics analysis. Those devices provide superior electrostatic control of channel, A different performance (gm, DIBL, ION/IOFF) with 14 nm channel length viewing the impunity to short channel effects with 3D advanced structure that we got gm=178 ms/mm at VDS =0.25V, a reasonable ratio ION/IOFF of 5.1 * 104, sub-threshold sweep (SS) equal to 135 mV/dec, DIBL =40 mV/V drain induced barrier lowering (DIBL) and finally a cut-off frequency of fC=800 GHz, the III-V GAA MOSFETs structures has provided a achievable path around optimal scaling of this devices.
{"title":"In0.53 Ga 0.47 As Triangular GAA MOSFETs","authors":"M. Khaouani, Z. Kourdi","doi":"10.1109/CCEE.2018.8634443","DOIUrl":"https://doi.org/10.1109/CCEE.2018.8634443","url":null,"abstract":"Triangular GAA MOSFETs (gate-all-around metal oxide semiconductor) with III-V material in channel has been simulated by Atlas Tcad-Silvaco software, we has used for obtain DC, AC characteristics analysis. Those devices provide superior electrostatic control of channel, A different performance (gm, DIBL, ION/IOFF) with 14 nm channel length viewing the impunity to short channel effects with 3D advanced structure that we got gm=178 ms/mm at VDS =0.25V, a reasonable ratio ION/IOFF of 5.1 * 104, sub-threshold sweep (SS) equal to 135 mV/dec, DIBL =40 mV/V drain induced barrier lowering (DIBL) and finally a cut-off frequency of fC=800 GHz, the III-V GAA MOSFETs structures has provided a achievable path around optimal scaling of this devices.","PeriodicalId":200936,"journal":{"name":"2018 International Conference on Communications and Electrical Engineering (ICCEE)","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116504124","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-12-01DOI: 10.1109/CCEE.2018.8634492
Amine Mohammed Taberkit, A. Guen-Bouazza, Mohamed Horch
We present in this work a dual channel heterostructure strained structure, introduce the high carrier mobility Awaited in heterostructure devices while using several models which are: CVT, SHIRAHATA and WATT, we present a two dimensional simulation of dual strained channel heterostructure P-MOSFETs. This study is accomplished using SILVACO-TCAD simulation software, the comparison of the effect of using strain technique on P-MOSFET transistors will demonstrate the importance of using strain technique especially in dual channel heterostructure MOSFET. The simulation of fabrication steps and the extraction of the electronic proprieties in terms of transfer and output characteristics, transconductance, and the quasi-static capacitance allow understanding and interpreting these enhancements.
{"title":"The importance of using dual channel heterostructure in strained P-MOSFETs","authors":"Amine Mohammed Taberkit, A. Guen-Bouazza, Mohamed Horch","doi":"10.1109/CCEE.2018.8634492","DOIUrl":"https://doi.org/10.1109/CCEE.2018.8634492","url":null,"abstract":"We present in this work a dual channel heterostructure strained structure, introduce the high carrier mobility Awaited in heterostructure devices while using several models which are: CVT, SHIRAHATA and WATT, we present a two dimensional simulation of dual strained channel heterostructure P-MOSFETs. This study is accomplished using SILVACO-TCAD simulation software, the comparison of the effect of using strain technique on P-MOSFET transistors will demonstrate the importance of using strain technique especially in dual channel heterostructure MOSFET. The simulation of fabrication steps and the extraction of the electronic proprieties in terms of transfer and output characteristics, transconductance, and the quasi-static capacitance allow understanding and interpreting these enhancements.","PeriodicalId":200936,"journal":{"name":"2018 International Conference on Communications and Electrical Engineering (ICCEE)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129679132","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-12-01DOI: 10.1109/CCEE.2018.8634536
N. Zidi, A. Chaouchi, M. Rguiti, C. Courtois, Y. Lorgouilloux
The influence of CuBi2O4 addition on sintering temperature, structural, dielectric and piezoelectric properties of (Ba, Ca)(Ti, Zr)O3 BCTZ ceramics prepared by the direct solid-state reaction were investigated. The X ray diffraction (XRD) data showed a single phase perovskite structure with morphotropic phase for all samples. The scanning electron microscopy observation showed the formation of glass phase in BCTZ doped compositions, which explain the reducing in sintering temperatures. The CuBi2O4 addition decrease the rhomboedral–tetragonal transition temperature and slightly increase Curie temperature. Ferroelectric measurements show that remanent polarisation (P r), and the coercive field of ceramics firstly increases and then decreases with further increasing the CuBi2O4 content. The dielectric behavior of all samples exhibited diffuse phase transition behaviour. Samples of the BCTZ ceramics modified with 0.08% of CuBi2O4 exhibited the highest density (5.39 g/cm3), the highest dielectric constant (εr=10566.) and the best piezoelectric constant (d33 = 320 pC/N)
{"title":"Effect of CuBi2O4 additive on dielectric, ferroelectric, and piezoelectric properties of BCTZ lead free ceramics sintered at low temperature","authors":"N. Zidi, A. Chaouchi, M. Rguiti, C. Courtois, Y. Lorgouilloux","doi":"10.1109/CCEE.2018.8634536","DOIUrl":"https://doi.org/10.1109/CCEE.2018.8634536","url":null,"abstract":"The influence of CuBi<inf>2</inf>O<inf>4</inf> addition on sintering temperature, structural, dielectric and piezoelectric properties of (Ba, Ca)(Ti, Zr)O<inf>3</inf> BCTZ ceramics prepared by the direct solid-state reaction were investigated. The X ray diffraction (XRD) data showed a single phase perovskite structure with morphotropic phase for all samples. The scanning electron microscopy observation showed the formation of glass phase in BCTZ doped compositions, which explain the reducing in sintering temperatures. The CuBi<inf>2</inf>O<inf>4</inf> addition decrease the rhomboedral–tetragonal transition temperature and slightly increase Curie temperature. Ferroelectric measurements show that remanent polarisation (P <inf>r</inf>), and the coercive field of ceramics firstly increases and then decreases with further increasing the CuBi2O4 content. The dielectric behavior of all samples exhibited diffuse phase transition behaviour. Samples of the BCTZ ceramics modified with 0.08% of CuBi<inf>2</inf>O<inf>4</inf> exhibited the highest density (5.39 g/cm<sup>3</sup>), the highest dielectric constant (ε<inf>r</inf>=10566.) and the best piezoelectric constant (d<inf>33</inf> = 320 pC/N)","PeriodicalId":200936,"journal":{"name":"2018 International Conference on Communications and Electrical Engineering (ICCEE)","volume":"217 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116431795","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-12-01DOI: 10.1109/ccee.2018.8634452
Othmane mellati, Said Saidat, M. Bouzidi, S. Barkat
The four-leg inverter presents a best topology for inverters operating in four-wire distribution systems. The goal of this work is to design circuit to control the three-phase four-leg inverter using three-dimensional space vector modulation. The implementation is performed on Zynq 7000 FPGA board based on hardware description language. XILINX FPGA presents a very high level fixable design/simulation tool named Xilinx ISE, which makes us able to test, change and correct the high level structural description design quickly.
{"title":"Design and implementation of three-dimensional space vector modulation for three-phase four-leg inverter based on FPGA","authors":"Othmane mellati, Said Saidat, M. Bouzidi, S. Barkat","doi":"10.1109/ccee.2018.8634452","DOIUrl":"https://doi.org/10.1109/ccee.2018.8634452","url":null,"abstract":"The four-leg inverter presents a best topology for inverters operating in four-wire distribution systems. The goal of this work is to design circuit to control the three-phase four-leg inverter using three-dimensional space vector modulation. The implementation is performed on Zynq 7000 FPGA board based on hardware description language. XILINX FPGA presents a very high level fixable design/simulation tool named Xilinx ISE, which makes us able to test, change and correct the high level structural description design quickly.","PeriodicalId":200936,"journal":{"name":"2018 International Conference on Communications and Electrical Engineering (ICCEE)","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123599525","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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