Pub Date : 2026-03-01Epub Date: 2026-01-08DOI: 10.1016/j.physe.2026.116466
Tuan V. Vu , Vo T.T. Vi , A.I. Kartamyshev , Huynh V. Phuc , Nguyen T. Hiep , Nguyen N. Hieu
The exploration of multifunctional two-dimensional semiconductors with superior intrinsic properties is an ongoing hot topic for advancing next-generation electronic technologies. Herein, three Janus WBN ( S, Se, Te) monolayers are designed and their fundamental characteristics are systematically studied through the first-principles simulations. According to the obtained cohesive energies, phonon dispersions, ab initio molecular dynamics, and elastic calculations, the WBNS, WBNSe and WBNTe structures are demonstrated to possess high crystal, dynamic, thermal and mechanical stabilities for experimental synthesis. The Raman spectra and vibrational properties of the WBN systems are investigated to provide insights into their lattice dynamics. Electronic structure calculations reveal that the proposed WBN monolayers are semiconductors with moderate bandgaps for applications in electronic and optoelectronic devices. Notably, the inclusion of spin–orbit coupling induces the spin energy splitting of the WBN systems. The WBNSe exhibits high Rashba parameters, suggesting potential applications in the spintronic devices. Importantly, the total electron and hole mobilities of the WBN materials are evaluated by considering different scattering mechanisms. Generally, the obtained carrier mobilities of the three WBNS, WBNSe and WBNTe configurations are quite low and govern by of electron–phonon scatterings. The finding in our work highlight the promising prospects of the Janus WBN materials for future nanotechnology applications.
探索具有优异内在特性的多功能二维半导体是推进下一代电子技术的一个热门话题。本文设计了三种Janus WBNX2 （X= S, Se, Te）单层膜，并通过第一性原理模拟系统地研究了其基本特性。根据得到的内聚能、声子色散、从头算分子动力学和弹性计算，证明WBNS2、WBNSe2和WBNTe2结构具有较高的晶体稳定性、动力学稳定性、热稳定性和力学稳定性，可用于实验合成。研究了WBNX2体系的拉曼光谱和振动特性，以提供对其晶格动力学的见解。电子结构计算表明，所提出的WBNX2单层是具有中等带隙的半导体，可用于电子和光电子器件。值得注意的是，自旋-轨道耦合诱导了WBNX2体系的自旋能量分裂。WBNSe2具有较高的Rashba参数，表明其在自旋电子器件中的潜在应用。重要的是，通过考虑不同的散射机制来评估WBNX2材料的总电子和空穴迁移率。总的来说，WBNS2、WBNSe2和WBNTe2三种构型的载流子迁移率都很低，并且受电子-声子散射的影响。我们的研究结果突出了Janus WBNX2材料在未来纳米技术应用中的广阔前景。
{"title":"Role of electron–phonon coupling in charge transport of Janus WBNX2 (X= S, Se, Te) monolayers: A first-principles analysis","authors":"Tuan V. Vu , Vo T.T. Vi , A.I. Kartamyshev , Huynh V. Phuc , Nguyen T. Hiep , Nguyen N. Hieu","doi":"10.1016/j.physe.2026.116466","DOIUrl":"10.1016/j.physe.2026.116466","url":null,"abstract":"<div><div>The exploration of multifunctional two-dimensional semiconductors with superior intrinsic properties is an ongoing hot topic for advancing next-generation electronic technologies. Herein, three Janus WBN<span><math><msub><mrow><mi>X</mi></mrow><mrow><mn>2</mn></mrow></msub></math></span> (<span><math><mrow><mi>X</mi><mo>=</mo></mrow></math></span> S, Se, Te) monolayers are designed and their fundamental characteristics are systematically studied through the first-principles simulations. According to the obtained cohesive energies, phonon dispersions, <em>ab initio</em> molecular dynamics, and elastic calculations, the WBNS<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span>, WBNSe<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span> and WBNTe<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span> structures are demonstrated to possess high crystal, dynamic, thermal and mechanical stabilities for experimental synthesis. The Raman spectra and vibrational properties of the WBN<span><math><msub><mrow><mi>X</mi></mrow><mrow><mn>2</mn></mrow></msub></math></span> systems are investigated to provide insights into their lattice dynamics. Electronic structure calculations reveal that the proposed WBN<span><math><msub><mrow><mi>X</mi></mrow><mrow><mn>2</mn></mrow></msub></math></span> monolayers are semiconductors with moderate bandgaps for applications in electronic and optoelectronic devices. Notably, the inclusion of spin–orbit coupling induces the spin energy splitting of the WBN<span><math><msub><mrow><mi>X</mi></mrow><mrow><mn>2</mn></mrow></msub></math></span> systems. The WBNSe<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span> exhibits high Rashba parameters, suggesting potential applications in the spintronic devices. Importantly, the total electron and hole mobilities of the WBN<span><math><msub><mrow><mi>X</mi></mrow><mrow><mn>2</mn></mrow></msub></math></span> materials are evaluated by considering different scattering mechanisms. Generally, the obtained carrier mobilities of the three WBNS<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span>, WBNSe<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span> and WBNTe<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span> configurations are quite low and govern by of electron–phonon scatterings. The finding in our work highlight the promising prospects of the Janus WBN<span><math><msub><mrow><mi>X</mi></mrow><mrow><mn>2</mn></mrow></msub></math></span> materials for future nanotechnology applications.</div></div>","PeriodicalId":20181,"journal":{"name":"Physica E-low-dimensional Systems & Nanostructures","volume":"178 ","pages":"Article 116466"},"PeriodicalIF":2.9,"publicationDate":"2026-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145979585","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2026-03-01Epub Date: 2026-01-08DOI: 10.1016/j.physe.2026.116467
Huabing Shu , Yuqing Dong , Haiying Xu
Exploring semiconductor-semimetal electrical contact behaviors is highly desirable for developing high-performance nanoelectronic devices. Here, we construct ultrathin van der Waals heterostructures by integrating novel BC2N and graphene monolayers. Their interfacial electronic characteristics, as well as the tunable Schottky barriers and contact types, are explored deeply through first-principles calculations. The constructed BC2N/graphene heterobilayers are verified to be energetically favorable and dynamically stable. All of them feature p-type Schottky contacts, with Schottky barrier heights that vary significantly depending on the stacking configurations. The high carrier mobilities suggested by small effective masses of carriers in the BC2N/graphene and small tunneling resistivities of ∼10−9 Ω cm2 can cater high-performance Schottky devices. More interestingly, the vertical electric field can induce a contact transformation (from p-type to an n-type Schottky contact or Schottky to Ohmic contact) and significantly increase the probability of carrier tunneling in BC2N/graphene heterobilayers. These findings offer valuable guidance for designing high-performance, controllable Schottky nanodevices based on BC2N/graphene heterobilayers.
{"title":"Exploring electrical contact properties of emerging BC2N/graphene heterobilayers though vertical electric field","authors":"Huabing Shu , Yuqing Dong , Haiying Xu","doi":"10.1016/j.physe.2026.116467","DOIUrl":"10.1016/j.physe.2026.116467","url":null,"abstract":"<div><div>Exploring semiconductor-semimetal electrical contact behaviors is highly desirable for developing high-performance nanoelectronic devices. Here, we construct ultrathin van der Waals heterostructures by integrating novel BC<sub>2</sub>N and graphene monolayers. Their interfacial electronic characteristics, as well as the tunable Schottky barriers and contact types, are explored deeply through first-principles calculations. The constructed BC<sub>2</sub>N/graphene heterobilayers are verified to be energetically favorable and dynamically stable. All of them feature <em>p</em>-type Schottky contacts, with Schottky barrier heights that vary significantly depending on the stacking configurations. The high carrier mobilities suggested by small effective masses of carriers in the BC<sub>2</sub>N/graphene and small tunneling resistivities of ∼10<sup>−9</sup> Ω cm<sup>2</sup> can cater high-performance Schottky devices. More interestingly, the vertical electric field can induce a contact transformation (from <em>p</em>-type to an <em>n</em>-type Schottky contact or Schottky to Ohmic contact) and significantly increase the probability of carrier tunneling in BC<sub>2</sub>N/graphene heterobilayers. These findings offer valuable guidance for designing high-performance, controllable Schottky nanodevices based on BC<sub>2</sub>N/graphene heterobilayers.</div></div>","PeriodicalId":20181,"journal":{"name":"Physica E-low-dimensional Systems & Nanostructures","volume":"178 ","pages":"Article 116467"},"PeriodicalIF":2.9,"publicationDate":"2026-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145929069","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2026-03-01Epub Date: 2026-01-29DOI: 10.1016/j.physe.2026.116477
Krishna Rana Magar, Vadym Apalkov
We study theoretically a nonlinear circular dichroism of Haldane model quantum dots (QDs) placed in the field of an ultrashort and strong circularly polarized optical pulse. The main parameter of the Haldane model is the phase , which breaks the time-reversal symmetry of a QD system, resulting in intrinsic chirality of the Haldane model QDs and a finite circular dichroism. The circular dichroism of a QD system strongly depends on the QD shape. The crucial condition is the existence of almost degenerate in-gap QD edge states for zero intrinsic phase, . For hexagonal QDs and triangular QDs with armchair edges, at , the QDs do not have any degenerate edge states. For such systems, at finite values of the phase , a perfect circular dichroism can be realized. The smallest phase, at which a perfect circular dichroism can be achieved, increases with the field amplitude. Also, at a given phase , a circular dichroism decreases with increasing the field strength. The origin of a large circular dichroism for such QD systems is the low-energy chiral edge states, which are formed at finite values of of the Haldane model. But, if, at , a Haldane model QD has almost degenerate edge states, which is the case of a triangular QD with zigzag edges, then, for any parameters of the Haldane model, a perfect circular dichroism cannot be realized. In this case, a circular dichroism as a function of the phase, parameters of the Haldane model, and the field amplitude shows strongly nonmonotic dependence.
{"title":"Perfect circular dichroism of Haldane model quantum dots","authors":"Krishna Rana Magar, Vadym Apalkov","doi":"10.1016/j.physe.2026.116477","DOIUrl":"10.1016/j.physe.2026.116477","url":null,"abstract":"<div><div>We study theoretically a nonlinear circular dichroism of Haldane model quantum dots (QDs) placed in the field of an ultrashort and strong circularly polarized optical pulse. The main parameter of the Haldane model is the phase <span><math><mi>ϕ</mi></math></span>, which breaks the time-reversal symmetry of a QD system, resulting in intrinsic chirality of the Haldane model QDs and a finite circular dichroism. The circular dichroism of a QD system strongly depends on the QD shape. The crucial condition is the existence of almost degenerate in-gap QD edge states for zero intrinsic phase, <span><math><mrow><mi>ϕ</mi><mo>=</mo><msup><mrow><mn>0</mn></mrow><mrow><mn>0</mn></mrow></msup></mrow></math></span>. For hexagonal QDs and triangular QDs with armchair edges, at <span><math><mrow><mi>ϕ</mi><mo>=</mo><msup><mrow><mn>0</mn></mrow><mrow><mn>0</mn></mrow></msup></mrow></math></span>, the QDs do not have any degenerate edge states. For such systems, at finite values of the phase <span><math><mi>ϕ</mi></math></span>, a perfect circular dichroism can be realized. The smallest phase, at which a perfect circular dichroism can be achieved, increases with the field amplitude. Also, at a given phase <span><math><mi>ϕ</mi></math></span>, a circular dichroism decreases with increasing the field strength. The origin of a large circular dichroism for such QD systems is the low-energy chiral edge states, which are formed at finite values of <span><math><mi>ϕ</mi></math></span> of the Haldane model. But, if, at <span><math><mrow><mi>ϕ</mi><mo>=</mo><msup><mrow><mn>0</mn></mrow><mrow><mn>0</mn></mrow></msup></mrow></math></span>, a Haldane model QD has almost degenerate edge states, which is the case of a triangular QD with zigzag edges, then, for any parameters of the Haldane model, a perfect circular dichroism cannot be realized. In this case, a circular dichroism as a function of the phase, parameters of the Haldane model, and the field amplitude shows strongly nonmonotic dependence.</div></div>","PeriodicalId":20181,"journal":{"name":"Physica E-low-dimensional Systems & Nanostructures","volume":"178 ","pages":"Article 116477"},"PeriodicalIF":2.9,"publicationDate":"2026-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146078772","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2026-02-01Epub Date: 2025-12-18DOI: 10.1016/j.physe.2025.116451
Luna R.N. Oliveira , Cleber F.N. Marchiori , Carlos Moyses Araujo , Marcos G.E. da Luz
The Rashba effect is a manifestation of spin–orbit coupling in systems with structural inversion asymmetry, resulting in a spin-dependent splitting of energy bands in low-dimensional systems. This gives rise to diverse spin-dependent phenomena in semiconductor heterostructures, offering significant potential for spintronic applications. However, a comprehensive theoretical characterization remains incomplete, since most existing approaches are restricted to relatively small structures. In this work, we combine the well-established eight-band Kane model and envelope-function formalism with a recently developed Green’s function approach. The framework allows to obtain analytical expressions for the spin-dependent coherent transport in semiconductor heterostructures with an arbitrary number of cells exhibiting the Rashba effect. In addition, we propose guidelines for enhancing spin polarization and spin-miniband separation in extended semiconductor heterostructures by tuning structural inversion asymmetry. Furthermore, we find that as a geometric parameter is varied, the spin-splitting dynamics present the quantum avoided-crossing behavior. We finally show that, for suitably designed heterostructures, the polarization bands can exhibit step-like (rectangular-wave) profiles. Although our examples focus on GaAs/In-based systems, the results are expected to hold for other semiconductor materials as well.
{"title":"Spin-dependent transport in long semiconductor heterostructures with Rashba effect: A Green’s function approach","authors":"Luna R.N. Oliveira , Cleber F.N. Marchiori , Carlos Moyses Araujo , Marcos G.E. da Luz","doi":"10.1016/j.physe.2025.116451","DOIUrl":"10.1016/j.physe.2025.116451","url":null,"abstract":"<div><div>The Rashba effect is a manifestation of spin–orbit coupling in systems with structural inversion asymmetry, resulting in a spin-dependent splitting of energy bands in low-dimensional systems. This gives rise to diverse spin-dependent phenomena in semiconductor heterostructures, offering significant potential for spintronic applications. However, a comprehensive theoretical characterization remains incomplete, since most existing approaches are restricted to relatively small structures. In this work, we combine the well-established eight-band Kane model and envelope-function formalism with a recently developed Green’s function approach. The framework allows to obtain analytical expressions for the spin-dependent coherent transport in semiconductor heterostructures with an arbitrary number <span><math><mi>N</mi></math></span> of cells exhibiting the Rashba effect. In addition, we propose guidelines for enhancing spin polarization and spin-miniband separation in extended semiconductor heterostructures by tuning structural inversion asymmetry. Furthermore, we find that as a geometric parameter is varied, the spin-splitting dynamics present the quantum avoided-crossing behavior. We finally show that, for suitably designed heterostructures, the polarization bands can exhibit step-like (rectangular-wave) profiles. Although our examples focus on GaAs/In-based systems, the results are expected to hold for other semiconductor materials as well.</div></div>","PeriodicalId":20181,"journal":{"name":"Physica E-low-dimensional Systems & Nanostructures","volume":"177 ","pages":"Article 116451"},"PeriodicalIF":2.9,"publicationDate":"2026-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145840167","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2026-02-01Epub Date: 2025-12-20DOI: 10.1016/j.physe.2025.116450
S.A. Ahmadova , Samir F. Samadov , G.B. Ibragimov , I.I. Vinogradov , A.A. Sidorin , D.M. Mirzayeva , B. Mauyey , S. Sakhabayeva , P. Th Le , Matlab N. Mirzayev
Breakthrough innovations continue in the field of developing and studying new-generation materials with superior optical and mechanical properties. In this research, we investigated the defect characteristics, as well as the modification of the local bonding environment and interphase interactions, in a nanocomposite material formed by incorporating β-Ga2O3 and carbon nanotubes (CNTs) into a polyvinylidene fluoride (PVDF) matrix using positron annihilation lifetime spectroscopy (PALS) and Raman spectroscopy. Raman studies show that the D and G bands, which are indicators of the structural quality of carbon nanotubes, exhibit weak additional vibrational modes that can be associated with distortions of the β-Ga2O3 lattice and modifications of the local Ga–O coordination environment, rather than with the ideal crystalline structure. The observed peak shifts and intensity changes indicate a transition of the interphase interaction into an amorphous state, accompanied by the formation of internal structural stress and defect centers. With increasing β-Ga2O3 concentration in the composite material, the decrease in the ID/IG ratio reveals the formation of chemical bonds that strengthen the oxide layer on the surface of the carbon nanotubes. PALS analysis results clearly demonstrated that the type and size of defects strongly depend on the ratio of Ga2O3 to carbon nanotubes in the composite. In pure β-Ga2O3 structures, medium-sized vacancy clusters (τ2 = 369 ps) are present, while in carbon nanotubes (τ2 = 685 ps), and in the composite samples based on them, the τ2 component increases up to 853 ps. Analysis based on the two-state trapping model showed that the changes in the τb, kd, and τ2 – τb parameters indicate the occurrence of porosity and defect clustering processes in the composite structure depending on the CNT and β-Ga2O3 ratios. The obtained results suggest that new polymer-based composite materials with highly porous structures can serve as fundamental elements in sensor technology, optoelectronic devices, and radiation-resistant equipment.
{"title":"Investigation of defect states, free volume, and interphase interactions in β-Ga2O3/CNT polymer nanocomposites","authors":"S.A. Ahmadova , Samir F. Samadov , G.B. Ibragimov , I.I. Vinogradov , A.A. Sidorin , D.M. Mirzayeva , B. Mauyey , S. Sakhabayeva , P. Th Le , Matlab N. Mirzayev","doi":"10.1016/j.physe.2025.116450","DOIUrl":"10.1016/j.physe.2025.116450","url":null,"abstract":"<div><div>Breakthrough innovations continue in the field of developing and studying new-generation materials with superior optical and mechanical properties. In this research, we investigated the defect characteristics, as well as the modification of the local bonding environment and interphase interactions, in a nanocomposite material formed by incorporating β-Ga<sub>2</sub>O<sub>3</sub> and carbon nanotubes (CNTs) into a polyvinylidene fluoride (PVDF) matrix using positron annihilation lifetime spectroscopy (PALS) and Raman spectroscopy. Raman studies show that the D and G bands, which are indicators of the structural quality of carbon nanotubes, exhibit weak additional vibrational modes that can be associated with distortions of the β-Ga<sub>2</sub>O<sub>3</sub> lattice and modifications of the local Ga–O coordination environment, rather than with the ideal crystalline structure. The observed peak shifts and intensity changes indicate a transition of the interphase interaction into an amorphous state, accompanied by the formation of internal structural stress and defect centers. With increasing β-Ga<sub>2</sub>O<sub>3</sub> concentration in the composite material, the decrease in the ID/IG ratio reveals the formation of chemical bonds that strengthen the oxide layer on the surface of the carbon nanotubes. PALS analysis results clearly demonstrated that the type and size of defects strongly depend on the ratio of Ga<sub>2</sub>O<sub>3</sub> to carbon nanotubes in the composite. In pure β-Ga<sub>2</sub>O<sub>3</sub> structures, medium-sized vacancy clusters (τ<sub>2</sub> = 369 ps) are present, while in carbon nanotubes (τ<sub>2</sub> = 685 ps), and in the composite samples based on them, the τ<sub>2</sub> component increases up to 853 ps. Analysis based on the two-state trapping model showed that the changes in the τb, kd, and τ<sub>2</sub> – τb parameters indicate the occurrence of porosity and defect clustering processes in the composite structure depending on the CNT and β-Ga<sub>2</sub>O<sub>3</sub> ratios. The obtained results suggest that new polymer-based composite materials with highly porous structures can serve as fundamental elements in sensor technology, optoelectronic devices, and radiation-resistant equipment.</div></div>","PeriodicalId":20181,"journal":{"name":"Physica E-low-dimensional Systems & Nanostructures","volume":"177 ","pages":"Article 116450"},"PeriodicalIF":2.9,"publicationDate":"2026-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145840164","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2026-02-01Epub Date: 2025-12-09DOI: 10.1016/j.physe.2025.116444
A.P. Garrido , P.A. Orellana , A. Matos-Abiague
We theoretically investigate the localization properties of Majorana states (MSs) in proximitized, planar Josephson Junctions (JJs) oriented along different crystallographic orientations and in the presence of an in-plane magnetic field and Rashba and Dresselhaus spin–orbit couplings. We show that two types of MSs may emerge when the junction transits into the topological superconducting state. In one case, referred to as end-like MSs, the Majorana quasiparticles are mainly localized inside the normal region at the opposite ends of the junction. In contrast, edge-like MSs extend along the opposite edges of the system, perpendicular to the junction channel. We show how the MSs can transit from end-like to edge-like and vice versa by tuning the magnetic field strength and/or the superconducting phase difference across the junction. In the case of phase-unbiased JJs the transition may occur as the ground state phase difference self-adjusts its value when the Zeeman field is varied. We propose exploiting the extended nature of edge-like MSs as effective interconnects enabling the coupling between topological states in adjacent planar JJs. The impact of electrostatic disorder on the MSs is also analyzed.
{"title":"Majorana edge and end states in planar Josephson junctions","authors":"A.P. Garrido , P.A. Orellana , A. Matos-Abiague","doi":"10.1016/j.physe.2025.116444","DOIUrl":"10.1016/j.physe.2025.116444","url":null,"abstract":"<div><div>We theoretically investigate the localization properties of Majorana states (MSs) in proximitized, planar Josephson Junctions (JJs) oriented along different crystallographic orientations and in the presence of an in-plane magnetic field and Rashba and Dresselhaus spin–orbit couplings. We show that two types of MSs may emerge when the junction transits into the topological superconducting state. In one case, referred to as end-like MSs, the Majorana quasiparticles are mainly localized inside the normal region at the opposite ends of the junction. In contrast, edge-like MSs extend along the opposite edges of the system, perpendicular to the junction channel. We show how the MSs can transit from end-like to edge-like and vice versa by tuning the magnetic field strength and/or the superconducting phase difference across the junction. In the case of phase-unbiased JJs the transition may occur as the ground state phase difference self-adjusts its value when the Zeeman field is varied. We propose exploiting the extended nature of edge-like MSs as effective interconnects enabling the coupling between topological states in adjacent planar JJs. The impact of electrostatic disorder on the MSs is also analyzed.</div></div>","PeriodicalId":20181,"journal":{"name":"Physica E-low-dimensional Systems & Nanostructures","volume":"177 ","pages":"Article 116444"},"PeriodicalIF":2.9,"publicationDate":"2026-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145737370","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2026-02-01Epub Date: 2025-12-10DOI: 10.1016/j.physe.2025.116446
A.M. Hassanien
The structural, morphological, and optical spectroscopic properties of hexadecafluoro zinc phthalocyanine (ZnPcF16) are promising investigations that can be useful in optoelectronic applications. The nature of the crystallographic structure and morphology characteristics were explored by field emission scanning electron microscopy (FESEM), and X-ray diffraction (XRD) investigations. To determine some crucial optical properties of the ZnPcF16 dye in solution, such as absorption peaks position, photoluminescence emission peaks position, oscillator strengths () and electric dipole strength (), spectrum behavior of the absorbance, fluorescent properties, and molar absorption coefficient spectra of ZnPcF16 in Dimethyl Sulfoxide (DMSO) were examined. Absorbance spectra, transmittance, reflectance, and photoluminescence (PL) of ZnPcF16 thin films before and after annealing at 373 K & 473 K in an air ambient for 2 h were used to deduce the optical band transitions, emission peaks position, and dispersion behaviour. This study demonstrates that the ZnPcF16 organic compound is characterized by good thermal stability, appropriate optical band gap, and dielectric properties, which offer potential uses as an active photonic organic material and should be properly addressed in the device design of optoelectronic technological devices.
{"title":"Optoelectronic applications of hexadecafluoro zinc phthalocyanine (ZnPcF16) thin films: structural, morphological, and optical characteristics","authors":"A.M. Hassanien","doi":"10.1016/j.physe.2025.116446","DOIUrl":"10.1016/j.physe.2025.116446","url":null,"abstract":"<div><div>The structural, morphological, and optical spectroscopic properties of hexadecafluoro zinc phthalocyanine <strong>(ZnPcF16)</strong> are promising investigations that can be useful in optoelectronic applications. The nature of the crystallographic structure and morphology characteristics were explored by field emission scanning electron microscopy (FESEM), and X-ray diffraction (XRD) investigations. To determine some crucial optical properties of the <strong>ZnPcF16</strong> dye in solution, such as absorption peaks position, photoluminescence emission peaks position, oscillator strengths (<span><math><mrow><mi>f</mi></mrow></math></span>) and electric dipole strength (<span><math><mrow><msup><mi>q</mi><mn>2</mn></msup></mrow></math></span>), spectrum behavior of the absorbance, fluorescent properties, and molar absorption coefficient spectra of <strong>ZnPcF16</strong> in Dimethyl Sulfoxide (DMSO) were examined. Absorbance spectra, transmittance, reflectance, and photoluminescence (PL) of <strong>ZnPcF16</strong> thin films before and after annealing at 373 K & 473 K in an air ambient for 2 h were used to deduce the optical band transitions, emission peaks position, and dispersion behaviour. This study demonstrates that the <strong>ZnPcF16</strong> organic compound is characterized by good thermal stability, appropriate optical band gap, and dielectric properties, which offer potential uses as an active photonic organic material and should be properly addressed in the device design of optoelectronic technological devices.</div></div>","PeriodicalId":20181,"journal":{"name":"Physica E-low-dimensional Systems & Nanostructures","volume":"177 ","pages":"Article 116446"},"PeriodicalIF":2.9,"publicationDate":"2026-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145787221","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2026-02-01Epub Date: 2025-12-01DOI: 10.1016/j.physe.2025.116438
Doan M. Quang , Nguyen Q. Bau , Le T.T. Phuong , Bui D. Hoi
We investigate the thermoelectric transport properties of gapped tilted-8- borophene, a two-dimensional boron allotrope with anisotropic electronic dispersion, using the semiclassical Boltzmann transport theory within the constant relaxation time approximation. The low-energy effective Hamiltonian incorporates a tilted Dirac cone structure with an induced bandgap, tunable via strain or substrate interactions. We calculate the electrical conductivity, Seebeck coefficient, and thermopower as functions of chemical potential, energy gap, and thermal energy. Our results reveal pronounced transport anisotropy in the - and -directions, with the -direction exhibiting higher conductivity and thermopower. Increasing the bandgap enhances the Seebeck coefficient and thermopower by aligning the Fermi level with the band edges, while higher temperatures boost conductivity at the expense of the Seebeck coefficient. These findings highlight the potential of gapped 8- borophene for nanoscale thermoelectric applications.
{"title":"Tunable thermopower in gapped 8-Pmmn borophene","authors":"Doan M. Quang , Nguyen Q. Bau , Le T.T. Phuong , Bui D. Hoi","doi":"10.1016/j.physe.2025.116438","DOIUrl":"10.1016/j.physe.2025.116438","url":null,"abstract":"<div><div>We investigate the thermoelectric transport properties of gapped tilted-8-<span><math><mrow><mi>P</mi><mi>m</mi><mi>m</mi><mi>n</mi></mrow></math></span> borophene, a two-dimensional boron allotrope with anisotropic electronic dispersion, using the semiclassical Boltzmann transport theory within the constant relaxation time approximation. The low-energy effective Hamiltonian incorporates a tilted Dirac cone structure with an induced bandgap, tunable via strain or substrate interactions. We calculate the electrical conductivity, Seebeck coefficient, and thermopower as functions of chemical potential, energy gap, and thermal energy. Our results reveal pronounced transport anisotropy in the <span><math><mi>x</mi></math></span>- and <span><math><mi>y</mi></math></span>-directions, with the <span><math><mi>x</mi></math></span>-direction exhibiting higher conductivity and thermopower. Increasing the bandgap enhances the Seebeck coefficient and thermopower by aligning the Fermi level with the band edges, while higher temperatures boost conductivity at the expense of the Seebeck coefficient. These findings highlight the potential of gapped 8-<span><math><mrow><mi>P</mi><mi>m</mi><mi>m</mi><mi>n</mi></mrow></math></span> borophene for nanoscale thermoelectric applications.</div></div>","PeriodicalId":20181,"journal":{"name":"Physica E-low-dimensional Systems & Nanostructures","volume":"177 ","pages":"Article 116438"},"PeriodicalIF":2.9,"publicationDate":"2026-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145682472","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2026-02-01Epub Date: 2025-12-05DOI: 10.1016/j.physe.2025.116437
Spyridon G. Kosionis, Alexandros Sarafidis, Emmanuel Paspalakis
We study the optical response of a semiconductor quantum dot coupled via Coulomb interaction to an ellipsoidal metal nanoparticle under weak coherent excitation. Using the density matrix formalism, we derive analytical expressions for the linear susceptibilities of both components of the hybrid nanostructure. We analyze how the dispersion and absorption spectra depend on the orientation and eccentricity of the metal nano-ellipsoid, the polarization of the incident field, and the interparticle distance. Our results highlight the precise conditions for pronounced gain enhancement without population inversion. Comparison with a quantum dot coupled to a metal nanosphere demonstrates that the observed gain enhancement originates from coherent exciton-plasmon interactions, a mechanism with direct implications for next-generation quantum devices.
{"title":"Optical response of a semiconductor quantum dot ‒ metal nano-ellipsoid hybrid system","authors":"Spyridon G. Kosionis, Alexandros Sarafidis, Emmanuel Paspalakis","doi":"10.1016/j.physe.2025.116437","DOIUrl":"10.1016/j.physe.2025.116437","url":null,"abstract":"<div><div>We study the optical response of a semiconductor quantum dot coupled via Coulomb interaction to an ellipsoidal metal nanoparticle under weak coherent excitation. Using the density matrix formalism, we derive analytical expressions for the linear susceptibilities of both components of the hybrid nanostructure. We analyze how the dispersion and absorption spectra depend on the orientation and eccentricity of the metal nano-ellipsoid, the polarization of the incident field, and the interparticle distance. Our results highlight the precise conditions for pronounced gain enhancement without population inversion. Comparison with a quantum dot coupled to a metal nanosphere demonstrates that the observed gain enhancement originates from coherent exciton-plasmon interactions, a mechanism with direct implications for next-generation quantum devices.</div></div>","PeriodicalId":20181,"journal":{"name":"Physica E-low-dimensional Systems & Nanostructures","volume":"177 ","pages":"Article 116437"},"PeriodicalIF":2.9,"publicationDate":"2026-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145840166","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2026-02-01Epub Date: 2025-12-22DOI: 10.1016/j.physe.2025.116452
Peng-Fei Liu , Xiao-Hong Li , Rui-Zhou Zhang , Hong-Ling Cui
The electronic properties and quantum capacitance of Pt-adsorbed Zr2CT2 (T = O, S, Se, F, Cl, Br, I) are explored by density functional theory (DFT). The most stable adsorption configurations are confirmed for all systems. Compared to pristine Zr2CO2, Pt adsorption causes the increase of band gap. Pt-Zr2CO2 exhibits an indirect bandgap semiconductor of 1.36 eV, while other systems show metallic behavior. Pt donates electrons to substrate material for Pt-Zr2CO2 and gains electrons from the substrate for other systems, especially Pt atom in Pt-Zr2CF2 gains the most electrons (0.61e). Pt-Zr2CT2 with group VII elements are anode materials in whole voltage, with the maximum surface storage charge (Q) at negative bias ranging from 69.58 to 93.05 μC/cm2 at aqueous system. Pt-Zr2CT2 (T = O, S, Se) are cathode materials in ionic/organic system. Pt-Zr2CT2 with mixed terminations are all anode materials in whole voltage.
{"title":"Structural and electronic properties, quantum capacitance of Pt-adsorbed Zr2CT2 (T = O, S, Se, F, Cl, Br, I) as supercapacitor electrode materials: First-principle predictions","authors":"Peng-Fei Liu , Xiao-Hong Li , Rui-Zhou Zhang , Hong-Ling Cui","doi":"10.1016/j.physe.2025.116452","DOIUrl":"10.1016/j.physe.2025.116452","url":null,"abstract":"<div><div>The electronic properties and quantum capacitance of Pt-adsorbed Zr<sub>2</sub>CT<sub>2</sub> (T = O, S, Se, F, Cl, Br, I) are explored by density functional theory (DFT). The most stable adsorption configurations are confirmed for all systems. Compared to pristine Zr<sub>2</sub>CO<sub>2</sub>, Pt adsorption causes the increase of band gap. Pt-Zr<sub>2</sub>CO<sub>2</sub> exhibits an indirect bandgap semiconductor of 1.36 eV, while other systems show metallic behavior. Pt donates electrons to substrate material for Pt-Zr<sub>2</sub>CO<sub>2</sub> and gains electrons from the substrate for other systems, especially Pt atom in Pt-Zr<sub>2</sub>CF<sub>2</sub> gains the most electrons (0.61e). Pt-Zr<sub>2</sub>CT<sub>2</sub> with group VII elements are anode materials in whole voltage, with the maximum surface storage charge (Q) at negative bias ranging from 69.58 to 93.05 μC/cm<sup>2</sup> at aqueous system. Pt-Zr<sub>2</sub>CT<sub>2</sub> (T = O, S, Se) are cathode materials in ionic/organic system. Pt-Zr<sub>2</sub>CT<sub>2</sub> with mixed terminations are all anode materials in whole voltage.</div></div>","PeriodicalId":20181,"journal":{"name":"Physica E-low-dimensional Systems & Nanostructures","volume":"177 ","pages":"Article 116452"},"PeriodicalIF":2.9,"publicationDate":"2026-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145840161","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
扫码关注我们
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号