Pub Date : 2024-12-23DOI: 10.1109/JPROC.2024.3509172
Summary form only: Abstracts of articles presented in this issue of the publication.
仅以摘要形式提供：本刊发表的文章摘要。
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Pub Date : 2024-12-11DOI: 10.1109/JPROC.2024.3492483
{"title":"Proceedings of the IEEE: Stay Informed. Become Inspired.","authors":"","doi":"10.1109/JPROC.2024.3492483","DOIUrl":"10.1109/JPROC.2024.3492483","url":null,"abstract":"","PeriodicalId":20556,"journal":{"name":"Proceedings of the IEEE","volume":"112 9","pages":"C4-C4"},"PeriodicalIF":23.2,"publicationDate":"2024-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10783093","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142804898","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"计算机科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-12-11DOI: 10.1109/JPROC.2024.3509073
{"title":"IEEE Connects You to a Universe of Information!","authors":"","doi":"10.1109/JPROC.2024.3509073","DOIUrl":"10.1109/JPROC.2024.3509073","url":null,"abstract":"","PeriodicalId":20556,"journal":{"name":"Proceedings of the IEEE","volume":"112 9","pages":"1568-1568"},"PeriodicalIF":23.2,"publicationDate":"2024-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10783098","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142804911","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"计算机科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-12-11DOI: 10.1109/JPROC.2024.3492475
{"title":"Proceedings of the IEEE Publication Information","authors":"","doi":"10.1109/JPROC.2024.3492475","DOIUrl":"10.1109/JPROC.2024.3492475","url":null,"abstract":"","PeriodicalId":20556,"journal":{"name":"Proceedings of the IEEE","volume":"112 9","pages":"C2-C2"},"PeriodicalIF":23.2,"publicationDate":"2024-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10783095","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142805235","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"计算机科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-12-11DOI: 10.1109/JPROC.2024.3500693
{"title":"TechRxiv","authors":"","doi":"10.1109/JPROC.2024.3500693","DOIUrl":"10.1109/JPROC.2024.3500693","url":null,"abstract":"","PeriodicalId":20556,"journal":{"name":"Proceedings of the IEEE","volume":"112 9","pages":"1567-1567"},"PeriodicalIF":23.2,"publicationDate":"2024-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10783100","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142804899","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"计算机科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-12-11DOI: 10.1109/JPROC.2024.3492481
{"title":"IEEE Membership","authors":"","doi":"10.1109/JPROC.2024.3492481","DOIUrl":"10.1109/JPROC.2024.3492481","url":null,"abstract":"","PeriodicalId":20556,"journal":{"name":"Proceedings of the IEEE","volume":"112 9","pages":"C3-C3"},"PeriodicalIF":23.2,"publicationDate":"2024-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10783099","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142804912","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"计算机科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-12-11DOI: 10.1109/JPROC.2024.3492479
{"title":"Future Special Issues/Special Sections of the Proceedings","authors":"","doi":"10.1109/JPROC.2024.3492479","DOIUrl":"10.1109/JPROC.2024.3492479","url":null,"abstract":"","PeriodicalId":20556,"journal":{"name":"Proceedings of the IEEE","volume":"112 9","pages":"1566-1566"},"PeriodicalIF":23.2,"publicationDate":"2024-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10783018","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142805236","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"计算机科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-12-09DOI: 10.1109/JPROC.2024.3506996
D. Kannadassan;K. Sivasankaran;S. Kumaravel;Chun-Hu Cheng;Maryam Shojaei Baghini;P. S. Mallick
Metal-insulator–metal (MIM) capacitors are inevitable and critical passive components in analog, mixed-signal, and memory applications. These capacitors occupy nearly 40% of circuit area among other passive and active components of the integrated circuit (IC). Considering this fact, the International Roadmap for Devices and Systems (IRDS) recognized and recommended the miniaturization of MIM capacitors with high permittivity dielectric materials. For future analog and radio frequency (RF) applications, the IRDS has predicted that MIM capacitors should hold a high capacitance density of $gt {10}~text {fF}/mu text {m}^{{2}}$ , a low voltage linearity of $lt {100}~text {ppm}/text {V}^{{2}}$ , and a low leakage current density of $lt {10}~text {nA}/text {cm}^{{2}}$ . In this regard, many research works have been carried out over the last few decades with various high-k dielectrics to achieve “low voltage linearity.” However, many of them are facing problems with structural defects, interface traps, and poor polarization process due to limitations of fabrication processes. This article attempts to review the challenges and opportunities involved in the reduction of voltage linearity and leakage of MIM capacitors. Also, this article presents the physical limits and challenges involved in MIM capacitor integration with back end of line (BEOL) process of recent complementary metal-oxide–semiconductor (CMOS) technologies. Using physical modeling, the design formula for low voltage linearity coefficient was derived, which helps IC developers in the design and implementation of highly linear RF-analog and mixed-signal (AMS) systems.
{"title":"High-k Metal–Insulator–Metal Capacitors for RF and Mixed-Signal VLSI Circuits: Challenges and Opportunities","authors":"D. Kannadassan;K. Sivasankaran;S. Kumaravel;Chun-Hu Cheng;Maryam Shojaei Baghini;P. S. Mallick","doi":"10.1109/JPROC.2024.3506996","DOIUrl":"10.1109/JPROC.2024.3506996","url":null,"abstract":"Metal-insulator–metal (MIM) capacitors are inevitable and critical passive components in analog, mixed-signal, and memory applications. These capacitors occupy nearly 40% of circuit area among other passive and active components of the integrated circuit (IC). Considering this fact, the International Roadmap for Devices and Systems (IRDS) recognized and recommended the miniaturization of MIM capacitors with high permittivity dielectric materials. For future analog and radio frequency (RF) applications, the IRDS has predicted that MIM capacitors should hold a high capacitance density of \u0000<inline-formula> <tex-math>$gt {10}~text {fF}/mu text {m}^{{2}}$ </tex-math></inline-formula>\u0000, a low voltage linearity of \u0000<inline-formula> <tex-math>$lt {100}~text {ppm}/text {V}^{{2}}$ </tex-math></inline-formula>\u0000, and a low leakage current density of \u0000<inline-formula> <tex-math>$lt {10}~text {nA}/text {cm}^{{2}}$ </tex-math></inline-formula>\u0000. In this regard, many research works have been carried out over the last few decades with various high-k dielectrics to achieve “low voltage linearity.” However, many of them are facing problems with structural defects, interface traps, and poor polarization process due to limitations of fabrication processes. This article attempts to review the challenges and opportunities involved in the reduction of voltage linearity and leakage of MIM capacitors. Also, this article presents the physical limits and challenges involved in MIM capacitor integration with back end of line (BEOL) process of recent complementary metal-oxide–semiconductor (CMOS) technologies. Using physical modeling, the design formula for low voltage linearity coefficient was derived, which helps IC developers in the design and implementation of highly linear RF-analog and mixed-signal (AMS) systems.","PeriodicalId":20556,"journal":{"name":"Proceedings of the IEEE","volume":"112 10","pages":"1610-1631"},"PeriodicalIF":23.2,"publicationDate":"2024-12-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10786276","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142797463","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"计算机科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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