Pub Date : 2022-02-16DOI: 10.56042/ijpap.v60i2.57063
{"title":"Characterization of Gold Thin Films Deposited by Centuries-old Fire-gilding Method","authors":"","doi":"10.56042/ijpap.v60i2.57063","DOIUrl":"https://doi.org/10.56042/ijpap.v60i2.57063","url":null,"abstract":"","PeriodicalId":209214,"journal":{"name":"Indian Journal of Pure & Applied Physics","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-02-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126322582","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-02-16DOI: 10.56042/ijpap.v60i2.27472
S. I. Radwana, A. M. Rashada, H. R. Tantawyc, S. A. Samadd
Deposition of different gold thickness on PM-355 cleaned by ethanol forming thin films using magnetron sputtering. Gold layer with thickness 300, 400, 500, 700, 1000, 1300, and 1500 nm were deposited to prepare Au / PM-355 thin films. Then, ac electrical properties response of thin films for a wide frequency range 20Hz - 5MHz were measured at room temperature. Meanwhile, the measurements of ac conductivity, dielectric constant, and dielectric loss factor were plotted at different frequencies to determine the optimum thickness. Hence, the comparison was done between optimum Au thickness thin films cleaned by two organic solvents and ethanol before annealing at different frequencies. Also, study the effect of annealing and ion beam that extracted radially from conical anode and disc cathode ion source on optimum Au thickness thin film electrical properties. It is found that the annealing increases both dielectric constant, dielectric loss, and ac conductivity of optimum Au thin film at different frequencies. Despite, the nitrogen ion beam effected on these thin films by decreasing the dielectric constant and ac conductivity for all thin films except the chloroform one. Finally, study the comparison between the annealing and followed by ion irradiation thin films. It is noticed the decrease in ac electrical conductivity and dielectric constant at different frequencies.
{"title":"Effect of Annealing and Ion Beam Irradiation on AC Electrical Properties for Gold Sputtered PM-355","authors":"S. I. Radwana, A. M. Rashada, H. R. Tantawyc, S. A. Samadd","doi":"10.56042/ijpap.v60i2.27472","DOIUrl":"https://doi.org/10.56042/ijpap.v60i2.27472","url":null,"abstract":"Deposition of different gold thickness on PM-355 cleaned by ethanol forming thin films using magnetron sputtering. Gold layer with thickness 300, 400, 500, 700, 1000, 1300, and 1500 nm were deposited to prepare Au / PM-355 thin films. Then, ac electrical properties response of thin films for a wide frequency range 20Hz - 5MHz were measured at room temperature. Meanwhile, the measurements of ac conductivity, dielectric constant, and dielectric loss factor were plotted at different frequencies to determine the optimum thickness. Hence, the comparison was done between optimum Au thickness thin films cleaned by two organic solvents and ethanol before annealing at different frequencies. Also, study the effect of annealing and ion beam that extracted radially from conical anode and disc cathode ion source on optimum Au thickness thin film electrical properties. It is found that the annealing increases both dielectric constant, dielectric loss, and ac conductivity of optimum Au thin film at different frequencies. Despite, the nitrogen ion beam effected on these thin films by decreasing the dielectric constant and ac conductivity for all thin films except the chloroform one. Finally, study the comparison between the annealing and followed by ion irradiation thin films. It is noticed the decrease in ac electrical conductivity and dielectric constant at different frequencies.","PeriodicalId":209214,"journal":{"name":"Indian Journal of Pure & Applied Physics","volume":"72 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-02-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121942662","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-02-16DOI: 10.56042/ijpap.v60i2.54664
{"title":"Effects of Al Content on Elastic Parameters of AlxGa1-xAs (0 ≤ x ≤ 1) Alloys","authors":"","doi":"10.56042/ijpap.v60i2.54664","DOIUrl":"https://doi.org/10.56042/ijpap.v60i2.54664","url":null,"abstract":"","PeriodicalId":209214,"journal":{"name":"Indian Journal of Pure & Applied Physics","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-02-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125606698","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-02-16DOI: 10.56042/ijpap.v60i2.57525
{"title":"Structural and Piezoelectric Properties of (Ba1-xCaxZr0.1Ti0.9)O3 Ceramics, Near Morphotropic Phase Boundary (0.140 ≤ x ≤ 0.160)","authors":"","doi":"10.56042/ijpap.v60i2.57525","DOIUrl":"https://doi.org/10.56042/ijpap.v60i2.57525","url":null,"abstract":"","PeriodicalId":209214,"journal":{"name":"Indian Journal of Pure & Applied Physics","volume":"541 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-02-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131919004","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-02-16DOI: 10.56042/ijpap.v60i2.58585
{"title":"Gamma Scan Data Analysis using Segmented FFT Method to Verify Liquid Maldistribution in Distillation Column of VDU","authors":"","doi":"10.56042/ijpap.v60i2.58585","DOIUrl":"https://doi.org/10.56042/ijpap.v60i2.58585","url":null,"abstract":"","PeriodicalId":209214,"journal":{"name":"Indian Journal of Pure & Applied Physics","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-02-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114319647","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-02-16DOI: 10.56042/ijpap.v60i2.54447
S. Bhat, J. S. Bhat, B. G. Hegde
The phenomenon of cyclotron resonance power absorption when electrons are scattered by acoustic-phonons in ZnO free standing nanostructure (FSNS) is presented. The calculation is based on quantum mechanical perturbation technique. The dependence of power absorption on frequency, magnetic field, temperature and thickness of the FSNS is presented. FWHM or line-width of the resonance power absorption peaks is calculated using profile method and the influence of magnetic field, temperature and thickness of the FSNS is investigated, that the line-width is proportional to magnetic field whereas it is independent of temperature and thickness of FSNS. This theoretical analysis gives insights about magneto-optical properties of FSNS of ZnO which is essential for further experimental investigations.
{"title":"Acoustic-Phonon Mediated Cyclotron Resonance Power Absorption in Zinc Oxide Free-Standing Nanostructure","authors":"S. Bhat, J. S. Bhat, B. G. Hegde","doi":"10.56042/ijpap.v60i2.54447","DOIUrl":"https://doi.org/10.56042/ijpap.v60i2.54447","url":null,"abstract":"The phenomenon of cyclotron resonance power absorption when electrons are scattered by acoustic-phonons in ZnO free standing nanostructure (FSNS) is presented. The calculation is based on quantum mechanical perturbation technique. The dependence of power absorption on frequency, magnetic field, temperature and thickness of the FSNS is presented. FWHM or line-width of the resonance power absorption peaks is calculated using profile method and the influence of magnetic field, temperature and thickness of the FSNS is investigated, that the line-width is proportional to magnetic field whereas it is independent of temperature and thickness of FSNS. This theoretical analysis gives insights about magneto-optical properties of FSNS of ZnO which is essential for further experimental investigations.","PeriodicalId":209214,"journal":{"name":"Indian Journal of Pure & Applied Physics","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-02-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129790383","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-02-16DOI: 10.56042/ijpap.v60i2.56579
M. Kandasamya, S. Murugesana, Mohammed M Alamc, M. Selvarajc
The effect of calcination temperature on the phase stability of solvothermally synthesized mesoporous anatase TiO 2 microspheres has been investigated through X-ray diffraction and Raman spectroscopy. Morphological change owing to anatase to rutile phase transformation has been examined by transmission electron microscopy. Dye-sensitized Solar Cell with anatase TiO 2 microspheres photoanode exhibits good photovoltaic performance with an overall cell efficiency of 4.47 %. Calcination above 900 °C reduces the efficiency. Incident Photon to Current Conversion Efficiency (IPCE) studies reveals that the TiO 2 microspheres calcined at 700 °C have high IPCE due to high dye loading owing to its high surface area and porous structure.
{"title":"Effect of Anatase and Rutile Phase Microspheres Composition on Dye-Sensitized Solar Cell Photoanode Performance","authors":"M. Kandasamya, S. Murugesana, Mohammed M Alamc, M. Selvarajc","doi":"10.56042/ijpap.v60i2.56579","DOIUrl":"https://doi.org/10.56042/ijpap.v60i2.56579","url":null,"abstract":"The effect of calcination temperature on the phase stability of solvothermally synthesized mesoporous anatase TiO 2 microspheres has been investigated through X-ray diffraction and Raman spectroscopy. Morphological change owing to anatase to rutile phase transformation has been examined by transmission electron microscopy. Dye-sensitized Solar Cell with anatase TiO 2 microspheres photoanode exhibits good photovoltaic performance with an overall cell efficiency of 4.47 %. Calcination above 900 °C reduces the efficiency. Incident Photon to Current Conversion Efficiency (IPCE) studies reveals that the TiO 2 microspheres calcined at 700 °C have high IPCE due to high dye loading owing to its high surface area and porous structure.","PeriodicalId":209214,"journal":{"name":"Indian Journal of Pure & Applied Physics","volume":"86 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-02-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126013333","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-02-16DOI: 10.56042/ijpap.v60i2.30016
A. Bouchikhi
In this work we study the effect of the dielectric barrier discharge (DBDs) on capacitively coupled radio frequency argon glow discharge at low pressure. Firstly, the property discharges are given without DBDs, commenced by means of which exists in the literature in order to validate our code numeric. The model is based on the drift-diffusion approximation. The results with DBDs are mostly affected by means of the surface charge concentrations and the gap voltage. Consequentially, the particle densities, electric potential and electric field, mean electron energy as well as the current densities are totally different compared to those obtained without dielectrics.
{"title":"Dielectric Barrier Discharge Effect on Capacitively Coupled RF Argon Glow Discharge","authors":"A. Bouchikhi","doi":"10.56042/ijpap.v60i2.30016","DOIUrl":"https://doi.org/10.56042/ijpap.v60i2.30016","url":null,"abstract":"In this work we study the effect of the dielectric barrier discharge (DBDs) on capacitively coupled radio frequency argon glow discharge at low pressure. Firstly, the property discharges are given without DBDs, commenced by means of which exists in the literature in order to validate our code numeric. The model is based on the drift-diffusion approximation. The results with DBDs are mostly affected by means of the surface charge concentrations and the gap voltage. Consequentially, the particle densities, electric potential and electric field, mean electron energy as well as the current densities are totally different compared to those obtained without dielectrics.","PeriodicalId":209214,"journal":{"name":"Indian Journal of Pure & Applied Physics","volume":"43 4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-02-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130794819","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-02-16DOI: 10.56042/ijpap.v60i2.54619
{"title":"A Dielectrically Modulated AlGaN/InN/GaN Nanoelectronic High Electron Mobility Transistor based Biosensor for Protein Detection","authors":"","doi":"10.56042/ijpap.v60i2.54619","DOIUrl":"https://doi.org/10.56042/ijpap.v60i2.54619","url":null,"abstract":"","PeriodicalId":209214,"journal":{"name":"Indian Journal of Pure & Applied Physics","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-02-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121502331","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-02-16DOI: 10.56042/ijpap.v60i2.58368
Aparna Tripathi, Pankaj Kumar
White organic light emitting diodes (WOLEDs) are emerging as potential light emitting technology and have found many applications from back light for liquid crystal displays to next generation displays and solid-state lighting. We report here the fabrication of organic light emitting diodes (OLEDs), which emit white light via multilayer color approach. These WOLEDs incorporated the materials emitting two complementary colors greenish-blue and reddish-orange to make white. The amount of light emitted from each layer was chosen in such a way that the mixture of the two emitted lights gave white light. The amount of light emitted from each layer was controlled by taking optimum thickness of each layer and incorporating a thin hole blocking layer of BCP in between the emissive layers. For greenish-blue light, we used a phosphorescent dopant FIrPic whereas for reddish-orange light we used the phosphorescent dopant Ir(btp) 2 (acac) and both of these dopants were doped in the host CBP. We studied the effect of operating voltage on the color of the emitted light of these WOLEDs and found that the color of the emitted light was almost independent of operating voltage. The WOLEDs emitted 1600 cd/m 2 at 15 V with Commission Internationale de I’Eclairage (CIE) coordinates (0.25, 0.32). We also studied the current density vs voltage ( J-V ) and voltage vs luminescence ( V-L ) characteristics of these devices and calculated their efficiency which was found to be 0.35 cd/A. We also prepared some WOLEDs based numeric displays just of the demonstration purpose.
{"title":"White Organic Light Emitting Diodes Via Complementary Color Mixing Approach Through Multilayer Device Architecture","authors":"Aparna Tripathi, Pankaj Kumar","doi":"10.56042/ijpap.v60i2.58368","DOIUrl":"https://doi.org/10.56042/ijpap.v60i2.58368","url":null,"abstract":"White organic light emitting diodes (WOLEDs) are emerging as potential light emitting technology and have found many applications from back light for liquid crystal displays to next generation displays and solid-state lighting. We report here the fabrication of organic light emitting diodes (OLEDs), which emit white light via multilayer color approach. These WOLEDs incorporated the materials emitting two complementary colors greenish-blue and reddish-orange to make white. The amount of light emitted from each layer was chosen in such a way that the mixture of the two emitted lights gave white light. The amount of light emitted from each layer was controlled by taking optimum thickness of each layer and incorporating a thin hole blocking layer of BCP in between the emissive layers. For greenish-blue light, we used a phosphorescent dopant FIrPic whereas for reddish-orange light we used the phosphorescent dopant Ir(btp) 2 (acac) and both of these dopants were doped in the host CBP. We studied the effect of operating voltage on the color of the emitted light of these WOLEDs and found that the color of the emitted light was almost independent of operating voltage. The WOLEDs emitted 1600 cd/m 2 at 15 V with Commission Internationale de I’Eclairage (CIE) coordinates (0.25, 0.32). We also studied the current density vs voltage ( J-V ) and voltage vs luminescence ( V-L ) characteristics of these devices and calculated their efficiency which was found to be 0.35 cd/A. We also prepared some WOLEDs based numeric displays just of the demonstration purpose.","PeriodicalId":209214,"journal":{"name":"Indian Journal of Pure & Applied Physics","volume":"92 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-02-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121934933","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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