Pub Date : 2023-05-01DOI: 10.31349/revmexfis.69.031302
Juan De la Rosa, E. Gomez, V. M. Valenzuela
An optical interferometer has a high sensitivity to displacements of the mirrors and other optical elements, something that becomes a source of fluctuations in situations where one is only interested in the phase change due to a sample inserted in one of the paths. A Sagnac interferometer minimizes this sensitivity by having the two beams follow opposite trajectories, so that a mirror displacement gives a similar phase change for both paths, but makes it impossible to insert an element that affects only one path. We present a new kind of interferometer, the Star interferometer, where the two beams still interact with all the optical elements while having different trajectories. We obtain a common phase change in both trajectories by having a different number of turns for each path. Having independent access to both trajectories makes it possible to determine the phase change due to a sample inserted in one of the paths, opening new possibilities for interferometric configurations that maintain a reduced sensitivity to displacements of the optical elements.
{"title":"Star shape interferometer with reduced vibration sensitivity","authors":"Juan De la Rosa, E. Gomez, V. M. Valenzuela","doi":"10.31349/revmexfis.69.031302","DOIUrl":"https://doi.org/10.31349/revmexfis.69.031302","url":null,"abstract":"An optical interferometer has a high sensitivity to displacements of the mirrors and other optical elements, something that becomes a source of fluctuations in situations where one is only interested in the phase change due to a sample inserted in one of the paths. A Sagnac interferometer minimizes this sensitivity by having the two beams follow opposite trajectories, so that a mirror displacement gives a similar phase change for both paths, but makes it impossible to insert an element that affects only one path. We present a new kind of interferometer, the Star interferometer, where the two beams still interact with all the optical elements while having different trajectories. We obtain a common phase change in both trajectories by having a different number of turns for each path. Having independent access to both trajectories makes it possible to determine the phase change due to a sample inserted in one of the paths, opening new possibilities for interferometric configurations that maintain a reduced sensitivity to displacements of the optical elements.","PeriodicalId":21538,"journal":{"name":"Revista Mexicana De Fisica","volume":" ","pages":""},"PeriodicalIF":1.7,"publicationDate":"2023-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"49454593","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-05-01DOI: 10.31349/revmexfis.69.030401
F. Ahmed
In this paper, we determine the approximate eigenvalue solution of the non-relativistic wave equation in the presence of the Aharonov-Bohm flux field with Hulthen-Yukawa-Inverse Quadratic potential in a topological defect via point-like global monopole (PGM) geometry. We use the Greene-Aldrich improved approximation scheme into the centrifugal and reciprocal terms appear in the radial Schrödinger equation. We then solve this radial equation using the parametric Nikiforov-Uvarov method and analyze the effects on the eigenvalue solution. We see that the energy levels and the radial wave functions get modified by the topological defect of a point-like global monopole and the magnetic flux field that shows an analogue of the Aharonov-Bohm effect for the bound state. Finally, we utilize the eigenvalue solution to some potential models, such as Hulthen potential, Hulthen plus Yukawa potential, and Hulthen plus inverse quadratic potential and discuss the results.
{"title":"Radial solution of Schrödinger equation with Hulthen-Yukawa-Inverse quadratic potential in a Point-Like defect under AB-flux field","authors":"F. Ahmed","doi":"10.31349/revmexfis.69.030401","DOIUrl":"https://doi.org/10.31349/revmexfis.69.030401","url":null,"abstract":"In this paper, we determine the approximate eigenvalue solution of the non-relativistic wave equation in the presence of the Aharonov-Bohm flux field with Hulthen-Yukawa-Inverse Quadratic potential in a topological defect via point-like global monopole (PGM) geometry. We use the Greene-Aldrich improved approximation scheme into the centrifugal and reciprocal terms appear in the radial Schrödinger equation. We then solve this radial equation using the parametric Nikiforov-Uvarov method and analyze the effects on the eigenvalue solution. We see that the energy levels and the radial wave functions get modified by the topological defect of a point-like global monopole and the magnetic flux field that shows an analogue of the Aharonov-Bohm effect for the bound state. Finally, we utilize the eigenvalue solution to some potential models, such as Hulthen potential, Hulthen plus Yukawa potential, and Hulthen plus inverse quadratic potential and discuss the results.","PeriodicalId":21538,"journal":{"name":"Revista Mexicana De Fisica","volume":" ","pages":""},"PeriodicalIF":1.7,"publicationDate":"2023-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"45873314","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-05-01DOI: 10.31349/revmexfis.69.031002
K. Salim, W. Azzaoui
ZnO thin films prepared using zinc chloride, zinc acetate and zinc nitrate precursors have been successfully synthesized by Spray Pyrolysis method. Films depositions were carried out on glass substrates at 350◦C. Structural properties of ZnO films were investigated by X-ray diffraction (XRD), confirming that all precursors have an Hexagonal Wurtzite structure. The obtained films were oriented along the preferential (002) crystallographic plane. The phase purity was also confirmed by X-ray photoelectron spectroscopy (XPS), Ultra Violet-Visible, and Energy Dispersive X-ray spectroscopy measurements (EDX). The optical measurement revealed that films have average transmittance of 58%, 78% and 65% for zinc chloride, zinc acetate and zinc nitrate, respectively. The band gap values obtained are 3.19, 3.17 and 3.23 eV for ZnO films using zinc acetate, zinc chloride and zinc nitrate precursors, respectively. Additionally, the refractive index and extinction coefficient of the ZnO films for all precursors have been explored.
{"title":"Physical properties of spray pyrolysed ZnO thin films obtained from nitrate, acetate and chloride precursors: Comparative study for Solar Cell Applications","authors":"K. Salim, W. Azzaoui","doi":"10.31349/revmexfis.69.031002","DOIUrl":"https://doi.org/10.31349/revmexfis.69.031002","url":null,"abstract":"ZnO thin films prepared using zinc chloride, zinc acetate and zinc nitrate precursors have been successfully synthesized by Spray Pyrolysis method. Films depositions were carried out on glass substrates at 350◦C. Structural properties of ZnO films were investigated by X-ray diffraction (XRD), confirming that all precursors have an Hexagonal Wurtzite structure. The obtained films were oriented along the preferential (002) crystallographic plane. The phase purity was also confirmed by X-ray photoelectron spectroscopy (XPS), Ultra Violet-Visible, and Energy Dispersive X-ray spectroscopy measurements (EDX). The optical measurement revealed that films have average transmittance of 58%, 78% and 65% for zinc chloride, zinc acetate and zinc nitrate, respectively. The band gap values obtained are 3.19, 3.17 and 3.23 eV for ZnO films using zinc acetate, zinc chloride and zinc nitrate precursors, respectively. Additionally, the refractive index and extinction coefficient of the ZnO films for all precursors have been explored.","PeriodicalId":21538,"journal":{"name":"Revista Mexicana De Fisica","volume":" ","pages":""},"PeriodicalIF":1.7,"publicationDate":"2023-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"49593558","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-05-01DOI: 10.31349/revmexfis.69.031605
G. J. González-Loera, Karla Arely Rodríguez Magdaleno, F. Nava-Maldonado, J. C. Martínez-Orozco
Without a doubt, the impact of the discovery of 2D systems such as graphene has led to both theoretical and experimental investigations of a large number of materials such as Silicene, Borene, Arsenene, Phosphorene, just to mention some of the most emblematic ones, but other materials and its heterostructures are also of interest. From this point of view, in this work we present the band structure, density of states as well as the imaginary part of the dielectric function of a 2D GaAs system, by means of a density functional theory implementation. The aim of this study is to investigate the basic physical properties for a freestanding 2D GaAs sheet, as well as the effect of Si substitutional atoms, since it has an amphoteric nature in the GaAs, which means that depending on which atom is substituted, this can be an n- or p-type impurity atom. We report, as expected, that the levels do indeed appear near the conduction band (or valence) if the impurity is n-type (or p-type), respectively. Also the density of states due to the impurity is modified as well as the imaginary part of the dielectric function
{"title":"Electronic structure and imaginary dielectric function for 2D GaAs doped with Si amphoteric impurities: A DFT study","authors":"G. J. González-Loera, Karla Arely Rodríguez Magdaleno, F. Nava-Maldonado, J. C. Martínez-Orozco","doi":"10.31349/revmexfis.69.031605","DOIUrl":"https://doi.org/10.31349/revmexfis.69.031605","url":null,"abstract":"Without a doubt, the impact of the discovery of 2D systems such as graphene has led to both theoretical and experimental investigations of a large number of materials such as Silicene, Borene, Arsenene, Phosphorene, just to mention some of the most emblematic ones, but other materials and its heterostructures are also of interest. From this point of view, in this work we present the band structure, density of states as well as the imaginary part of the dielectric function of a 2D GaAs system, by means of a density functional theory implementation. The aim of this study is to investigate the basic physical properties for a freestanding 2D GaAs sheet, as well as the effect of Si substitutional atoms, since it has an amphoteric nature in the GaAs, which means that depending on which atom is substituted, this can be an n- or p-type impurity atom. We report, as expected, that the levels do indeed appear near the conduction band (or valence) if the impurity is n-type (or p-type), respectively. Also the density of states due to the impurity is modified as well as the imaginary part of the dielectric function","PeriodicalId":21538,"journal":{"name":"Revista Mexicana De Fisica","volume":" ","pages":""},"PeriodicalIF":1.7,"publicationDate":"2023-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"49478873","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-05-01DOI: 10.31349/revmexfis.69.030803
Vien Vo Van
We propose a gauge B−L model with D5×Z4 for explaining the lepton mass and mixing through the type-I seesaw mechanism. The model can predict the neutrino masses and mixing angles including the Dirac and Majorana CP phases in good agreement with the experimental data. The model also predicts the effective neutrino parameters in highly consistent with the current constraints.
{"title":"B − L model with D5 × Z4 symmetry for lepton mass hierarchy and mixing","authors":"Vien Vo Van","doi":"10.31349/revmexfis.69.030803","DOIUrl":"https://doi.org/10.31349/revmexfis.69.030803","url":null,"abstract":"We propose a gauge B−L model with D5×Z4 for explaining the lepton mass and mixing through the type-I seesaw mechanism. The model can predict the neutrino masses and mixing angles including the Dirac and Majorana CP phases in good agreement with the experimental data. The model also predicts the effective neutrino parameters in highly consistent with the current constraints.","PeriodicalId":21538,"journal":{"name":"Revista Mexicana De Fisica","volume":" ","pages":""},"PeriodicalIF":1.7,"publicationDate":"2023-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"44590545","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-05-01DOI: 10.31349/revmexfis.69.031001
Augustine U. Agobi, A. Ikeuba, A. Ekpunobi, I. Ikhioya, Kuffre Imoh Udofia, J. E. Ntibi, C. N. Ozoemena, M. Abua
Novel ternary nanocomposite films based on polyvinylpyrrolidone copper nanoparticles graphene oxide (PVP/Cu/GO) were prepared using electrochemical deposition technique on Fluorine doped tin oxide (FTO) substrate. This facile and effective approach has been proven to be very useful for the fabrication of inexpensive, high-performance electrochemical devices. To achieve uniform deposition of the nanocomposite films, the three components of the nanocomposites were mixed under controlled conditions. The impact of different GO loading on the PVP/Cu/GO composites was measured using UV–visible spectroscopy, X-Ray Diffraction (XRD) spectroscopy, SEM, EDX, and four-point probe techniques to evaluate their optical, structural, morphological, compositional, and electrical properties, respectively. UV-visible analysis shows that the optical band gap (Eg) of the nanocomposite decreased from 3.51 to 2.02 eV with increasing GO loading. All of the nanocomposites showed UV absorbance of ≈450 nm. According to the XRD results, the GO materials were very well dispersed in the PVP/Cu/GO composites, while also revealing the crystalline nature of the nanocomposites. The SEM results revealed spherical-shaped grains of the deposited films, while the EDX results revealed the major elements deposited. Four-point probe analysis of the nanocomposites revealed slight increase in conductivity with low GO content, thus confirming the semiconducting properties of the nanocomposites with the GO content. The obtained results herein shows that the PVP/Cu/GO nanocomposites are successfully synthesized with attractive physiochemical properties suitable for the fabrication of organic electronic devices and photovoltaic devices.
{"title":"Optical and structural properties of graphene oxide-incorporated polyvinylpyrrolidone/copper ternary nanocomposites (PVP/Cu/GO) films","authors":"Augustine U. Agobi, A. Ikeuba, A. Ekpunobi, I. Ikhioya, Kuffre Imoh Udofia, J. E. Ntibi, C. N. Ozoemena, M. Abua","doi":"10.31349/revmexfis.69.031001","DOIUrl":"https://doi.org/10.31349/revmexfis.69.031001","url":null,"abstract":"Novel ternary nanocomposite films based on polyvinylpyrrolidone copper nanoparticles graphene oxide (PVP/Cu/GO) were prepared using electrochemical deposition technique on Fluorine doped tin oxide (FTO) substrate. This facile and effective approach has been proven to be very useful for the fabrication of inexpensive, high-performance electrochemical devices. To achieve uniform deposition of the nanocomposite films, the three components of the nanocomposites were mixed under controlled conditions. The impact of different GO loading on the PVP/Cu/GO composites was measured using UV–visible spectroscopy, X-Ray Diffraction (XRD) spectroscopy, SEM, EDX, and four-point probe techniques to evaluate their optical, structural, morphological, compositional, and electrical properties, respectively. UV-visible analysis shows that the optical band gap (Eg) of the nanocomposite decreased from 3.51 to 2.02 eV with increasing GO loading. All of the nanocomposites showed UV absorbance of ≈450 nm. According to the XRD results, the GO materials were very well dispersed in the PVP/Cu/GO composites, while also revealing the crystalline nature of the nanocomposites. The SEM results revealed spherical-shaped grains of the deposited films, while the EDX results revealed the major elements deposited. Four-point probe analysis of the nanocomposites revealed slight increase in conductivity with low GO content, thus confirming the semiconducting properties of the nanocomposites with the GO content. The obtained results herein shows that the PVP/Cu/GO nanocomposites are successfully synthesized with attractive physiochemical properties suitable for the fabrication of organic electronic devices and photovoltaic devices.","PeriodicalId":21538,"journal":{"name":"Revista Mexicana De Fisica","volume":" ","pages":""},"PeriodicalIF":1.7,"publicationDate":"2023-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"48668032","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-05-01DOI: 10.31349/revmexfis.69.031101
E. Harki, Zhala S. Rashid
Interventional cardiology procedures (ICP) are considered some of the main medical procedures in which patients are exposed to high doses of radiation. The aim of this study was to examine how to control the level of radiation exposure and to analyse and study the factors affecting the increase in radiation exposure from the specified level using a regression method. The results model correctly predicted that in 80.0%, 90.5%, and 95.2% of the cases, there were routine dose area product (DAP) levels, and in 64.3%, 33.3%, and 77.8% of cases, there were high levels of DAP, giving an overall percentage, correct prediction rate of 72.45%, 73.35%, and 90.0%, for coronary angiography (CA), percutaneous coronary intervention (PCI), and combined CA with PCI (CA/PCI), respectively. All the factors studied in this research, namely Kv, mA, Fluoroscopy Time (FT) and Body Mass Index (BMI), have a significant relationship with the DAP level. We concluded that regression analysis is a reliable method for evaluating the user protocol in a center or hospital and identifying variables that have an effect on the dose area product level in interventional cardiology.
{"title":"Analysis of factors that affect radiation dose level during interventional cardiology procedures using logistic regression","authors":"E. Harki, Zhala S. Rashid","doi":"10.31349/revmexfis.69.031101","DOIUrl":"https://doi.org/10.31349/revmexfis.69.031101","url":null,"abstract":"Interventional cardiology procedures (ICP) are considered some of the main medical procedures in which patients are exposed to high doses of radiation. The aim of this study was to examine how to control the level of radiation exposure and to analyse and study the factors affecting the increase in radiation exposure from the specified level using a regression method. The results model correctly predicted that in 80.0%, 90.5%, and 95.2% of the cases, there were routine dose area product (DAP) levels, and in 64.3%, 33.3%, and 77.8% of cases, there were high levels of DAP, giving an overall percentage, correct prediction rate of 72.45%, 73.35%, and 90.0%, for coronary angiography (CA), percutaneous coronary intervention (PCI), and combined CA with PCI (CA/PCI), respectively. All the factors studied in this research, namely Kv, mA, Fluoroscopy Time (FT) and Body Mass Index (BMI), have a significant relationship with the DAP level. We concluded that regression analysis is a reliable method for evaluating the user protocol in a center or hospital and identifying variables that have an effect on the dose area product level in interventional cardiology.","PeriodicalId":21538,"journal":{"name":"Revista Mexicana De Fisica","volume":" ","pages":""},"PeriodicalIF":1.7,"publicationDate":"2023-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"45587824","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-05-01DOI: 10.31349/revmexfis.69.031603
G. González de la Cruz
The last years, graphene has opened exciting new fields in graphene plasmonics, due to the graphene’s unique optoelectronic properties such as long-lived collective excitation, extreme optical confinement in graphene plasmonics and extraordinary light-matter interactions in metamaterials. Therefore, these excellent properties make graphene a favorable candidate for novel plasmonic devices and potential applications in photonics, optoelectronics and sensor technologies. In this work, theoretical investigations are carried out to in Graphene-Metal-Graphene structure for enhanced surface plasmon resonance based on the recurrence relations’ method. We find that the graphene-metal-graphene structure supports both high-energy optical plasmon oscillations and out-of-phase low energy acoustic charge density excitations. Since a high performance of surface plasmon resonance excitations should exhibit a large depth of dip (small reflectivity), the minimum of reflectivity in the hybrid structure can be manipulated dynamically by changing the thickness of the metallic film, the number of the graphene layers and the dielectric proprieties of the surrounding dielectric materials. Based on this principle, different kinds of plasmonic sensors have been designed in previous years.
{"title":"Surface plasmon resonance based on graphene-metal-graphene structure: recurrence relation theory","authors":"G. González de la Cruz","doi":"10.31349/revmexfis.69.031603","DOIUrl":"https://doi.org/10.31349/revmexfis.69.031603","url":null,"abstract":"The last years, graphene has opened exciting new fields in graphene plasmonics, due to the graphene’s unique optoelectronic properties such as long-lived collective excitation, extreme optical confinement in graphene plasmonics and extraordinary light-matter interactions in metamaterials. Therefore, these excellent properties make graphene a favorable candidate for novel plasmonic devices and potential applications in photonics, optoelectronics and sensor technologies. In this work, theoretical investigations are carried out to in Graphene-Metal-Graphene structure for enhanced surface plasmon resonance based on the recurrence relations’ method. We find that the graphene-metal-graphene structure supports both high-energy optical plasmon oscillations and out-of-phase low energy acoustic charge density excitations. Since a high performance of surface plasmon resonance excitations should exhibit a large depth of dip (small reflectivity), the minimum of reflectivity in the hybrid structure can be manipulated dynamically by changing the thickness of the metallic film, the number of the graphene layers and the dielectric proprieties of the surrounding dielectric materials. Based on this principle, different kinds of plasmonic sensors have been designed in previous years.","PeriodicalId":21538,"journal":{"name":"Revista Mexicana De Fisica","volume":" ","pages":""},"PeriodicalIF":1.7,"publicationDate":"2023-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"48329601","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-05-01DOI: 10.31349/revmexfis.69.031604
Ricardo Jiménez-Sánchez, Pedro Morales-Vergara, F. Salazar, Á. Miranda, A. Trejo, I. J. Hernández-Hernández, L. A. Pérez, M. Cruz‐Irisson
In this work, we present a Density Functional Theory (DFT) study of hydrogen-passivated germanium nanowires grown along the [111] crystallographic direction. The study is performed within the local density approximation (LDA) and the supercell technique. Four different diameters of nanowires were considered and the surface hydrogen atoms were replaced by Li ones using a sequential process. The results indicate that the nanowires have a semiconductor behaviour and the energy band gap diminishes when the number of Li atoms per unit cell increases. The formation energy results reveal that the Li atoms increase the stability of the Ge nanowires, and there is a charge transfer from the Li atoms to the surface Ge atoms. The open circuit voltage values are almost independent of the concentration of Li atoms. On the other hand, the lithium storage capacity results reveal that the Ge nanowires could be good candidates to be incorporated as anodic materials in the new generation of rechargeable batteries.
{"title":"Theoretical study of [111]-germanium nanowires as anode materials in rechargeable batteries: a density functional theory approach","authors":"Ricardo Jiménez-Sánchez, Pedro Morales-Vergara, F. Salazar, Á. Miranda, A. Trejo, I. J. Hernández-Hernández, L. A. Pérez, M. Cruz‐Irisson","doi":"10.31349/revmexfis.69.031604","DOIUrl":"https://doi.org/10.31349/revmexfis.69.031604","url":null,"abstract":"In this work, we present a Density Functional Theory (DFT) study of hydrogen-passivated germanium nanowires grown along the [111] crystallographic direction. The study is performed within the local density approximation (LDA) and the supercell technique. Four different diameters of nanowires were considered and the surface hydrogen atoms were replaced by Li ones using a sequential process. The results indicate that the nanowires have a semiconductor behaviour and the energy band gap diminishes when the number of Li atoms per unit cell increases. The formation energy results reveal that the Li atoms increase the stability of the Ge nanowires, and there is a charge transfer from the Li atoms to the surface Ge atoms. The open circuit voltage values are almost independent of the concentration of Li atoms. On the other hand, the lithium storage capacity results reveal that the Ge nanowires could be good candidates to be incorporated as anodic materials in the new generation of rechargeable batteries.","PeriodicalId":21538,"journal":{"name":"Revista Mexicana De Fisica","volume":" ","pages":""},"PeriodicalIF":1.7,"publicationDate":"2023-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"49585168","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-05-01DOI: 10.31349/revmexfis.69.031602
A. Douara, A. Rabehi, Oussama Baitiche
Here, we study a simulation model of In0.17Al0.83N/GaN passivated high electron mobility transistors (HEMTs) on SiC substrate. The research focused systematically on the effet of AlN interlayer on the electronic and electric characteristics using the Nextnano simulation software. The 2D–electron gas density of In0.17Al0.83N/AlN/GaN HEMTs is investigated through the dependence on various AlN layer thickness, we report calculations of I-V characteristics, with 1.5 nm AlN thickness, we find the highest maximum output current of 1.81 A/mm at Vgs 1 V, and more than 450 mS/mm as a transconductance peak. The Results are in agreement with experimental data.
{"title":"Impact of AlN interlayer on the electronic and I-V characteristics of In0.17Al0.83N/GaN HEMTs devices","authors":"A. Douara, A. Rabehi, Oussama Baitiche","doi":"10.31349/revmexfis.69.031602","DOIUrl":"https://doi.org/10.31349/revmexfis.69.031602","url":null,"abstract":"Here, we study a simulation model of In0.17Al0.83N/GaN passivated high electron mobility transistors (HEMTs) on SiC substrate. The research focused systematically on the effet of AlN interlayer on the electronic and electric characteristics using the Nextnano simulation software. The 2D–electron gas density of In0.17Al0.83N/AlN/GaN HEMTs is investigated through the dependence on various AlN layer thickness, we report calculations of I-V characteristics, with 1.5 nm AlN thickness, we find the highest maximum output current of 1.81 A/mm at Vgs 1 V, and more than 450 mS/mm as a transconductance peak. The Results are in agreement with experimental data.","PeriodicalId":21538,"journal":{"name":"Revista Mexicana De Fisica","volume":" ","pages":""},"PeriodicalIF":1.7,"publicationDate":"2023-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"49532059","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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