Pub Date : 2023-01-03DOI: 10.31349/revmexfis.69.010703
C. Avilés-Niebla, J. A. Nieto, J. F. Zamacona
A black-hole solution in four time and four space dimensions ((4+4)-dimensions) is developed. It is emphasized that such a solution establishes a duality relation between the (1+3) and the (3+1) black-holes, which are part of the (4+4)-world. Moreover, it is found that a cosmological constant of the (1+3)-world is dual to the cosmological constant in the (3+1)-world.
{"title":"Black-Hole duality in four time and four space dimensions","authors":"C. Avilés-Niebla, J. A. Nieto, J. F. Zamacona","doi":"10.31349/revmexfis.69.010703","DOIUrl":"https://doi.org/10.31349/revmexfis.69.010703","url":null,"abstract":"A black-hole solution in four time and four space dimensions ((4+4)-dimensions) is developed. It is emphasized that such a solution establishes a duality relation between the (1+3) and the (3+1) black-holes, which are part of the (4+4)-world. Moreover, it is found that a cosmological constant of the (1+3)-world is dual to the cosmological constant in the (3+1)-world.","PeriodicalId":21538,"journal":{"name":"Revista Mexicana De Fisica","volume":null,"pages":null},"PeriodicalIF":1.7,"publicationDate":"2023-01-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"42094764","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-01-03DOI: 10.31349/revmexfis.69.011702
Víctor Hernández, F. Vázquez
In this work a 1D slightly doped n-type Silicon layer is considered. Irreversible thermodynamics transport equations are used to obtain the spatial particle distribution in isothermal stationary state. The excess particle transport is studied in low injection regime and quasineutrality condition. The material is subjected to Dirichlet-Neumann (N-D) conditions at the boundaries. We wonder if an asymmetry of the particle flux exists when the boundary conditions are inverted. We find that the asymmetry does exist and a rectification factor may reach the value 0.35. We conclude that particle flux rectification seems to be featuring the particle transport in slightly non-homogeneously doped semiconductor when the excess hole concentration is smaller than the equilibrium hole concentration
{"title":"Asymmetry in particle transport in slightly non-homogeneously doped silicon layers in low injection regime and quasi-neutrality condition","authors":"Víctor Hernández, F. Vázquez","doi":"10.31349/revmexfis.69.011702","DOIUrl":"https://doi.org/10.31349/revmexfis.69.011702","url":null,"abstract":"In this work a 1D slightly doped n-type Silicon layer is considered. Irreversible thermodynamics transport equations are used to obtain the spatial particle distribution in isothermal stationary state. The excess particle transport is studied in low injection regime and quasineutrality condition. The material is subjected to Dirichlet-Neumann (N-D) conditions at the boundaries. We wonder if an asymmetry of the particle flux exists when the boundary conditions are inverted. We find that the asymmetry does exist and a rectification factor may reach the value 0.35. We conclude that particle flux rectification seems to be featuring the particle transport in slightly non-homogeneously doped semiconductor when the excess hole concentration is smaller than the equilibrium hole concentration","PeriodicalId":21538,"journal":{"name":"Revista Mexicana De Fisica","volume":null,"pages":null},"PeriodicalIF":1.7,"publicationDate":"2023-01-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"42509121","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-01-03DOI: 10.31349/revmexfis.69.010701
Gabriel González Contreras
Overdamping is a regime in which friction is sufficiently large that the motion either decays to its equilibrium position or it crosses the equilibrium position exactly once before returning monotonically towards the equilibrium position. The phenomena of overdamping has been studied classically and quantum mechanically only for the case of the linear damped harmonic oscillator. Here we study the classical and quantum dynamics of a family of over-damped non linear systems. The main objective of this paper is to find a Lagrangian and Hamiltonian framework to study over-damped non linear systems and to show that a quantum mechanical description can be developed in the momentum representation. Our results reduce to the well known solution of the linear damped harmonic oscillator when the non linear part is set to zero.
{"title":"Classical and quantum dynamics of over-damped non linear systems","authors":"Gabriel González Contreras","doi":"10.31349/revmexfis.69.010701","DOIUrl":"https://doi.org/10.31349/revmexfis.69.010701","url":null,"abstract":"Overdamping is a regime in which friction is sufficiently large that the motion either decays to its equilibrium position or it crosses the equilibrium position exactly once before returning monotonically towards the equilibrium position. The phenomena of overdamping has been studied classically and quantum mechanically only for the case of the linear damped harmonic oscillator. Here we study the classical and quantum dynamics of a family of over-damped non linear systems. The main objective of this paper is to find a Lagrangian and Hamiltonian framework to study over-damped non linear systems and to show that a quantum mechanical description can be developed in the momentum representation. Our results reduce to the well known solution of the linear damped harmonic oscillator when the non linear part is set to zero.","PeriodicalId":21538,"journal":{"name":"Revista Mexicana De Fisica","volume":null,"pages":null},"PeriodicalIF":1.7,"publicationDate":"2023-01-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"43424789","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-01-03DOI: 10.31349/revmexfis.69.010502
Jorge A. Lizarraga, Gustavo López Velázquez
We determine the operators associated to the index of degeneration of Landau's levels for the Landau's gauge and symmetric gauge of the magnetic field, with the non separable eigenvalue solution obtained for a charged particle in a flat box under a magnetic field perpendicular to flat motion.
{"title":"Operator associated to the index of degeneration of Landau’s levels","authors":"Jorge A. Lizarraga, Gustavo López Velázquez","doi":"10.31349/revmexfis.69.010502","DOIUrl":"https://doi.org/10.31349/revmexfis.69.010502","url":null,"abstract":"We determine the operators associated to the index of degeneration of Landau's levels for the Landau's gauge and symmetric gauge of the magnetic field, with the non separable eigenvalue solution obtained for a charged particle in a flat box under a magnetic field perpendicular to flat motion.","PeriodicalId":21538,"journal":{"name":"Revista Mexicana De Fisica","volume":null,"pages":null},"PeriodicalIF":1.7,"publicationDate":"2023-01-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"45143870","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-01-03DOI: 10.31349/revmexfis.69.011001
A. C. Oliveira de Souza, L. F. da Silva Tupan, A. Thyago Jensen, A. Paesano Junior
Manganese (II) acetates tetrahydrate, zinc dihydrate and anhydrous zirconium, processed by freeze-drying, were heat-treated in free atmosphere at different temperatures and times, generating the main oxides of these metals. These acetates were structurally characterized by scanning electron microscopy (SEM), thermogravimetry (TG), differential scanning calorimetry (DSC) and, along with all the oxides generated, by X-ray diffraction (XRD). Calculations obtained from TG data showed that manganese acetate lost two waters after freeze-drying, also confirmed by X-ray data and that the same phenomenon may be occurring for zinc acetate. The results indicate that exothermic events occurred at lower temperatures for freeze-dried acetates, which may be related to the high surface area of the material, and consequent greater reactivity. The total decomposition temperatures of the acetates in the ZnO and ZrO2 semiconducting oxides and the manganese oxides Mn2O3 and Me3O4, with excellent crystallization, were obtained.
{"title":"Structural and morphological study of Mn, Zn and Zr freeze-dried transition metal acetates","authors":"A. C. Oliveira de Souza, L. F. da Silva Tupan, A. Thyago Jensen, A. Paesano Junior","doi":"10.31349/revmexfis.69.011001","DOIUrl":"https://doi.org/10.31349/revmexfis.69.011001","url":null,"abstract":"Manganese (II) acetates tetrahydrate, zinc dihydrate and anhydrous zirconium, processed by freeze-drying, were heat-treated in free atmosphere at different temperatures and times, generating the main oxides of these metals. These acetates were structurally characterized by scanning electron microscopy (SEM), thermogravimetry (TG), differential scanning calorimetry (DSC) and, along with all the oxides generated, by X-ray diffraction (XRD). Calculations obtained from TG data showed that manganese acetate lost two waters after freeze-drying, also confirmed by X-ray data and that the same phenomenon may be occurring for zinc acetate. The results indicate that exothermic events occurred at lower temperatures for freeze-dried acetates, which may be related to the high surface area of the material, and consequent greater reactivity. The total decomposition temperatures of the acetates in the ZnO and ZrO2 semiconducting oxides and the manganese oxides Mn2O3 and Me3O4, with excellent crystallization, were obtained.","PeriodicalId":21538,"journal":{"name":"Revista Mexicana De Fisica","volume":null,"pages":null},"PeriodicalIF":1.7,"publicationDate":"2023-01-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"46417070","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-01-03DOI: 10.31349/revmexfis.69.010503
H. Bouchenafa, B. Benichou
In this work, the influences of biaxial compressive and tensile strains on optical gain and threshold current density are investigated theoretically as a function of the side lengths of the quantum box in the GaN/Al0.2Ga0.8N structure by using a model based on the density matrix theory of semiconductor lasers with relaxation broadening. For various side lengths of the quantum box, we compare the spectra gain curves of compressive, tensile-strained, and unstrained structures of the GaN/Al0.2Ga0.8N cubic quantum-dot (QD) laser. The dependence of peak optical gain on carrier density and the modal gain on current density is plotted too for all cases. The results reveal that many enhancements can be made to the laser structure by introducing -0.5% compressive strain: a higher value of optical gain of 18421 cm-1 at L=60A, a lower value of transparency of carrier density of Ntr=0.13*10¨¨19 cm-3and transparency current density of Jtr=26.9 A/cm and a lower threshold current density of Jth= 78.87 A/cm2 at L=100 A.
{"title":"Optical gain and threshold current density of strained wurtzite GaN/AlGaN quantum dot lasers","authors":"H. Bouchenafa, B. Benichou","doi":"10.31349/revmexfis.69.010503","DOIUrl":"https://doi.org/10.31349/revmexfis.69.010503","url":null,"abstract":"In this work, the influences of biaxial compressive and tensile strains on optical gain and threshold current density are investigated theoretically as a function of the side lengths of the quantum box in the GaN/Al0.2Ga0.8N structure by using a model based on the density matrix theory of semiconductor lasers with relaxation broadening. For various side lengths of the quantum box, we compare the spectra gain curves of compressive, tensile-strained, and unstrained structures of the GaN/Al0.2Ga0.8N cubic quantum-dot (QD) laser. The dependence of peak optical gain on carrier density and the modal gain on current density is plotted too for all cases. The results reveal that many enhancements can be made to the laser structure by introducing -0.5% compressive strain: a higher value of optical gain of 18421 cm-1 at L=60A, a lower value of transparency of carrier density of Ntr=0.13*10¨¨19 cm-3and transparency current density of Jtr=26.9 A/cm and a lower threshold current density of Jth= 78.87 A/cm2 at L=100 A.","PeriodicalId":21538,"journal":{"name":"Revista Mexicana De Fisica","volume":null,"pages":null},"PeriodicalIF":1.7,"publicationDate":"2023-01-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"41900051","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-01-03DOI: 10.31349/revmexfis.69.011003
Saadiya Benatmane, M. Affane, Y. Bouali, B. Bouadjemi, S. Cherid, W. Benstaali
Many of the known examples of half-metallic ferromagnets HMF are oxides, sulfides, or Heusler alloys have attracted some interest for their potential use in spintronics. In order to achieve such understanding we have performed an ab-initio calculations with spin polarization using plane-wave pseudo potential technique based on the density-functional theory (DFT), the exchange-correlation potential was treated with the generalized gradient approximation (PBE-GGA), whereas for the treatment of on-site electron-electron correlations the PBE-GGA+U approximation (where U is the Hubbard Coulomb energy term) are applied for the calculation of the structural, electronic, elastic and magnetic properties of Pd2PrX (X=Cl, F). The results showed that for Pd2PrCl and Pd2PrF, Hg2CuTi-type structure is energetically more stable than Cu2MnAl-type structure at the equilibrium volume. Electronically, Pd2PrCl and Pd2PrF exhibit half-metallicity with small band gaps of 0.06 and 0.25eV respectively with GGA-PBE+U in the spin-down channels whereas spin-up channels are conducting. The calculated total magnetic moment of 2.00 μB per formula unit is very close to integer value and agree well with the Slater-Pauling rules ( Mtot=34-Ztot), where the magnetic moment is basically carried by Pr atoms. However, the elastic properties show that Pd2PrX (X=Cl, F) compounds are ductile and anisotropic according to the analysis of B/G and Cauchy’s pressure. The Thermodynamic properties were also analyzed using the quasi-harmonic Debye model. Both the compounds are found structurally stable.
{"title":"Phase stability, mechanical, electronic, magnetic and thermodynamic properties of the Pd2PrX(X=Cl, F) compounds: An Ab-initio study","authors":"Saadiya Benatmane, M. Affane, Y. Bouali, B. Bouadjemi, S. Cherid, W. Benstaali","doi":"10.31349/revmexfis.69.011003","DOIUrl":"https://doi.org/10.31349/revmexfis.69.011003","url":null,"abstract":"Many of the known examples of half-metallic ferromagnets HMF are oxides, sulfides, or Heusler alloys have attracted some interest for their potential use in spintronics. In order to achieve such understanding we have performed an ab-initio calculations with spin polarization using plane-wave pseudo potential technique based on the density-functional theory (DFT), the exchange-correlation potential was treated with the generalized gradient approximation (PBE-GGA), whereas for the treatment of on-site electron-electron correlations the PBE-GGA+U approximation (where U is the Hubbard Coulomb energy term) are applied for the calculation of the structural, electronic, elastic and magnetic properties of Pd2PrX (X=Cl, F). The results showed that for Pd2PrCl and Pd2PrF, Hg2CuTi-type structure is energetically more stable than Cu2MnAl-type structure at the equilibrium volume. Electronically, Pd2PrCl and Pd2PrF exhibit half-metallicity with small band gaps of 0.06 and 0.25eV respectively with GGA-PBE+U in the spin-down channels whereas spin-up channels are conducting. The calculated total magnetic moment of 2.00 μB per formula unit is very close to integer value and agree well with the Slater-Pauling rules ( Mtot=34-Ztot), where the magnetic moment is basically carried by Pr atoms. However, the elastic properties show that Pd2PrX (X=Cl, F) compounds are ductile and anisotropic according to the analysis of B/G and Cauchy’s pressure. The Thermodynamic properties were also analyzed using the quasi-harmonic Debye model. Both the compounds are found structurally stable.","PeriodicalId":21538,"journal":{"name":"Revista Mexicana De Fisica","volume":null,"pages":null},"PeriodicalIF":1.7,"publicationDate":"2023-01-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"47017577","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-01-03DOI: 10.31349/revmexfis.69.011004
Hemza Mancer, M. Caid, H. Rached, Zakiya Nakoul, D. Rached
The primary goal of this study is to investigate the effect of different exchange-correlation functionals on the optoelectronic and elastic properties of the Ag2O chalcogenide compound. For the electronic structures and optical spectra, the Tran-Blaha modified Becke-Johnson approach combined with GGA and with GGA+U (mBJ-GGA-PBEsol and mBJ-GGA-PBEsol+U, respectively) was used. The available theoretical and experimental data for the bandgap energy were reported to determine whether there is a correlation with our results. The electronic structure revealed that our compound is a direct semiconductor at the R-symmetry point with a bandgap of 1.22 eV, which this value agrees well with the experimental values for the first time. The elastic constants were also evaluated using the IRelast package, which revealed that the compound was mechanically stable. Finally, the optical response was systematically studied, and it was found that Ag2O exhibited excellent optical efficiency.
{"title":"Probing the effect of different exchange-correlation functionals on the optoelectronic features of chalcogenide compound Ag2O","authors":"Hemza Mancer, M. Caid, H. Rached, Zakiya Nakoul, D. Rached","doi":"10.31349/revmexfis.69.011004","DOIUrl":"https://doi.org/10.31349/revmexfis.69.011004","url":null,"abstract":"The primary goal of this study is to investigate the effect of different exchange-correlation functionals on the optoelectronic and elastic properties of the Ag2O chalcogenide compound. For the electronic structures and optical spectra, the Tran-Blaha modified Becke-Johnson approach combined with GGA and with GGA+U (mBJ-GGA-PBEsol and mBJ-GGA-PBEsol+U, respectively) was used. The available theoretical and experimental data for the bandgap energy were reported to determine whether there is a correlation with our results. The electronic structure revealed that our compound is a direct semiconductor at the R-symmetry point with a bandgap of 1.22 eV, which this value agrees well with the experimental values for the first time. The elastic constants were also evaluated using the IRelast package, which revealed that the compound was mechanically stable. Finally, the optical response was systematically studied, and it was found that Ag2O exhibited excellent optical efficiency.","PeriodicalId":21538,"journal":{"name":"Revista Mexicana De Fisica","volume":null,"pages":null},"PeriodicalIF":1.7,"publicationDate":"2023-01-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"49389181","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-01-03DOI: 10.31349/revmexfis.69.011201
Ali Askari, H. Hassanabadi, Won Sang Chung
In this paper the continuity equation for Wigner-Dunkl-Schrodinger equation is studied. Some properties of ¨ ν-deformed functions related to Dunkl derivative are also studied. Based on these, the step potential and Ramsauer-Townsend effect are discussed in Wigner-Dunkl quantum mechanics
{"title":"Step potential and Ramsauer-Townsend effect in Wigner-Dunkl quantum mechanics","authors":"Ali Askari, H. Hassanabadi, Won Sang Chung","doi":"10.31349/revmexfis.69.011201","DOIUrl":"https://doi.org/10.31349/revmexfis.69.011201","url":null,"abstract":"In this paper the continuity equation for Wigner-Dunkl-Schrodinger equation is studied. Some properties of ¨ ν-deformed functions related to Dunkl derivative are also studied. Based on these, the step potential and Ramsauer-Townsend effect are discussed in Wigner-Dunkl quantum mechanics","PeriodicalId":21538,"journal":{"name":"Revista Mexicana De Fisica","volume":null,"pages":null},"PeriodicalIF":1.7,"publicationDate":"2023-01-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"47493292","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-01-03DOI: 10.31349/revmexfis.69.011002
W. Azzaoui, M. Medles, K. Salim, A. Nakrela, A. Bouzidi, R. Miloua, M. Amroun, M. Khadraoui
TM (TM = Sn, Al) doped and co-doped CdO thin films were deposited by spray pyrolysis technique on glass substrate at temperature 350 ˚C. The effect of TM doping and co-doping on the structural, morphological, optical, and electrical properties of CdO thin films was investigated. The obtained films are crystallized in the cubic structure and oriented along the preferential (111) crystallographic plane. The average optical transmittance reaches 79% in the visible range for Sn doped CdO films and 74% for Al-Sn co-doped films. The gap values of the obtained samples are between 2.29 and 2.49 eV. All the deposited films exhibit n-type conductivity with a low electrical resistivity of 7.85.10-4 Ω.cm obtained for Al doped CdO films.
{"title":"Characterization and physical property studies of Sn, Al doped and co-doped CdO thin films","authors":"W. Azzaoui, M. Medles, K. Salim, A. Nakrela, A. Bouzidi, R. Miloua, M. Amroun, M. Khadraoui","doi":"10.31349/revmexfis.69.011002","DOIUrl":"https://doi.org/10.31349/revmexfis.69.011002","url":null,"abstract":"TM (TM = Sn, Al) doped and co-doped CdO thin films were deposited by spray pyrolysis technique on glass substrate at temperature 350 ˚C. The effect of TM doping and co-doping on the structural, morphological, optical, and electrical properties of CdO thin films was investigated. The obtained films are crystallized in the cubic structure and oriented along the preferential (111) crystallographic plane. The average optical transmittance reaches 79% in the visible range for Sn doped CdO films and 74% for Al-Sn co-doped films. The gap values of the obtained samples are between 2.29 and 2.49 eV. All the deposited films exhibit n-type conductivity with a low electrical resistivity of 7.85.10-4 Ω.cm obtained for Al doped CdO films. \u0000 ","PeriodicalId":21538,"journal":{"name":"Revista Mexicana De Fisica","volume":null,"pages":null},"PeriodicalIF":1.7,"publicationDate":"2023-01-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"45661129","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
京公网安备 11010802042870号
京ICP备2023020795号-1
扫码关注我们
求助内容：
应助结果提醒方式：