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Subcell-Resolved EQE Method Using Reverse Voltage Biasing for Multijunction Photovoltaics With Overlapping Subcell Absorptance 基于反向电压偏置的亚电池分解EQE方法用于具有重叠亚电池吸收的多结光伏
IF 8 2区 材料科学 Q1 ENERGY & FUELS Pub Date : 2025-04-21 DOI: 10.1002/pip.3914
Meghan N. Beattie, Michael Schachtner, Gerald Siefer, David Lackner, Oliver Höhn, Karin Hinzer, Henning Helmers

External quantum efficiency (EQE) measurements of individual subcells in multijunction photovoltaic devices are essential to evaluate current matching and to iterate the design process. The standard light biasing technique used to measure subcell EQE falls short when multiple subcells absorb within the same spectral region. In this work, we demonstrate a three-step reverse voltage biasing EQE method, which measures any number of subcells with overlapping absorptance: (1) A light bias is applied to generate current mismatch between the subcells. (2) Current–voltage (I–V) characteristics are measured into reverse bias, where the limiting subcell enters reverse-bias breakdown and the device current climbs to a plateau at the photocurrent of the next limiting subcell, producing a staircase I–V curve. (3) Each subcell EQE curve is measured using a voltage bias within its current plateau. We demonstrate this approach for a two-junction GaAs-based photonic power converter, comparing to the standard light biasing method and revealing better than 0.8% absolute agreement when the top junction is preferentially biased in the reverse voltage biasing method. We demonstrate the viability of the method by measuring the EQE of all subcells in a six-junction GaAs-based photonic power converter.

多结光伏器件中单个子电池的外部量子效率(EQE)测量对于评估电流匹配和迭代设计过程至关重要。当多个亚细胞在同一光谱区域内吸收时,用于测量亚细胞EQE的标准光偏置技术存在不足。在这项工作中,我们展示了一种三步反向电压偏置EQE方法,该方法可以测量具有重叠吸收率的任意数量的子单元:(1)施加光偏置以产生子单元之间的电流不匹配。(2)测量电流-电压(I-V)特性为反向偏置,其中限位子电池进入反向偏置击穿,器件电流在下一个限位子电池的光电流处攀升至平台,产生阶梯I-V曲线。(3)每个子单元EQE曲线在其电流平台内使用电压偏置测量。我们在一个基于gaas的双结光子功率转换器上演示了这种方法,与标准光偏置方法进行了比较,结果表明,当顶结在反向电压偏置方法中优先偏置时,绝对一致性优于0.8%。我们通过测量六结gaas光子功率转换器中所有子单元的EQE来证明该方法的可行性。
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引用次数: 0
Top-Cell Ohmic Shunt Imaging in 2-Terminal Tandem Solar Cells by Differential Electroluminescence 差分电致发光在2端串联太阳能电池中的顶电池欧姆分流成像
IF 8 2区 材料科学 Q1 ENERGY & FUELS Pub Date : 2025-04-21 DOI: 10.1002/pip.3916
Joël Wyttenbach, Muriel Matheron

Perovskite/silicon tandem photovoltaic cells promise higher energy conversion efficiencies than silicon single junctions for reasonable additional production cost. However, they are more complex, due to the increased number of layers and to the perovskite material features regarding kinetic, stability, and surface homogeneity. Although measuring each subcell independently from each other is still a challenge, this work introduces a novel quantified electroluminescence (EL) imaging method of the top-cell ohmic shunt, a major issue in perovskite stacks. Device modeling, validated by experiments, led to ohmic shunt 2D resolution from differential EL measurements around 0.7 V, without optical filtering or spectral resolution. The shunt resistance maps of more than 60 cells were characterized, and the shunt quantification from these maps was consistent with electrical measurements. These maps provide relevant clues regarding ohmic defect origin by showing their strength, shape, and location. Applications range from lab-scale performance improvement and aging monitoring to manufacturing control including encapsulation.

钙钛矿/硅串联光伏电池在合理的额外生产成本下,比硅单结具有更高的能量转换效率。然而,由于层数的增加以及钙钛矿材料在动力学、稳定性和表面均匀性方面的特性,它们更加复杂。尽管测量每个亚电池彼此独立仍然是一个挑战,但这项工作引入了一种新的顶电池欧姆分流的量化电致发光(EL)成像方法,这是钙钛矿堆的一个主要问题。通过实验验证的器件建模,可以在0.7 V左右的差分EL测量中获得欧姆分流2D分辨率,而无需光学滤波或光谱分辨率。对60多个细胞的分流电阻图进行了表征,从这些图中得出的分流定量与电测量结果一致。这些地图通过显示欧姆缺陷的强度、形状和位置,提供了有关欧姆缺陷起源的相关线索。应用范围从实验室规模的性能改进和老化监测到包括封装在内的制造控制。
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引用次数: 0
Identification of Recoverable and Non-Recoverable Potential-Induced Degradation-Shunted Cells in Crystalline Silicon Photovoltaic Modules 晶体硅光伏组件中可恢复和不可恢复的电势诱导降解分流电池的识别
IF 8 2区 材料科学 Q1 ENERGY & FUELS Pub Date : 2025-04-15 DOI: 10.1002/pip.3913
Ravi Kumar, Rajesh Gupta

Potential-induced degradation (PID) is a severe degradation mechanism in crystalline silicon (c-Si) photovoltaic (PV) modules. In p-type c-Si PV modules, PID results in the formation of shunt paths on the front side of negatively biased cells relative to the grounded frame due to the diffusion of sodium ions (Na+), a phenomenon known as PID shunting (PID-s). Various methods for PID-s recovery, which involve the outward diffusion of Na+, have been reported. However, whereas some cells show almost complete recovery, others exhibit no recovery at all. Conducting PID-s recovery without knowing the recoverability of the cells is inefficient and wasteful; therefore, a method to identify recoverable and non-recoverable cells prior to recovery is needed. In this work, a method using current-resolved electroluminescence (EL) imaging is proposed to identify recoverable and non-recoverable cells in a PV module by evaluating their PID-s nature as ohmic or non-ohmic, which depends on the concentration of Na+ ions. A total of 90 cells from three different modules are subjected to PID-s degradation and recovery. The experimental results show varying degrees of PID-s loss and recovery among the tested cells. The analysis highlights that non-ohmic shunts exhibit greater recovery potential than ohmic ones, a finding further verified using dark lock-in thermography (DLIT). Furthermore, the proposed method qualitatively provides insights into the recovery potential of individual cells, establishing EL imaging as an effective tool for assessing PID-s severity and predicting recovery. This paves the way for future advancements in PID-s diagnostics and mitigation strategies within PV systems.

电位诱导降解(PID)是晶体硅(c-Si)光伏(PV)组件中一种严重的降解机制。在p型c-Si光伏组件中,由于钠离子(Na+)的扩散,PID导致负偏置电池相对于接地框架的正面形成分流路径,这种现象称为PID分流(PID-s)。目前已经报道了多种涉及Na+向外扩散的pid回收方法。然而,有些细胞几乎完全恢复,有些细胞则完全没有恢复。在不知道细胞可恢复性的情况下进行PID-s恢复是低效和浪费的;因此,需要一种在恢复之前识别可恢复和不可恢复单元的方法。在这项工作中,提出了一种使用电流分辨电致发光(EL)成像的方法,通过评估其pids的欧姆或非欧姆性质来识别PV组件中的可恢复和不可恢复电池,这取决于Na+离子的浓度。来自三个不同模块的共90个细胞进行了pid的降解和恢复。实验结果表明,在不同的被试细胞中,PID-s的损失和恢复程度不同。分析强调,非欧姆分流器比欧姆分流器表现出更大的恢复潜力,这一发现通过暗锁定热成像(DLIT)得到了进一步验证。此外,所提出的方法定性地提供了对单个细胞恢复潜力的见解,建立了EL成像作为评估pid严重程度和预测恢复的有效工具。这为PV系统中pid诊断和缓解策略的未来发展铺平了道路。
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引用次数: 0
Transformations in Perovskite Photovoltaics: Film Formation, Processing Conditions, and Recovery Outlook 钙钛矿光电转换:薄膜形成、加工条件和回收前景
IF 8 2区 材料科学 Q1 ENERGY & FUELS Pub Date : 2025-04-05 DOI: 10.1002/pip.3911
Bidisha Nath, Jeykishan Kumar, Sushant K. Behera, Praveen C. Ramamurthy, Debiprosad Roy Mahapatra, Gopalkrishna Hegde

Organometallic halide perovskites have received significant attention due to their promising optoelectronic properties, particularly in photovoltaics. The formation process of perovskite films is crucial in determining their structural and functional characteristics. In this study, the effects of methylamine vapour treatment and vacuum annealing on enhancing the crystallinity, morphology and structural integrity of perovskite films are examined. Methylammonium lead iodide (MAPI)–based perovskite films are investigated, with a focus on their crystallographic structure, vibrational modes and their correlation with device performance. Power conversion efficiencies (PCEs) of 19.5% and 18.6% have been achieved using one-step and two-step processes, respectively. The influence of trap states, film homogeneity and interfacial properties has been analysed through capacitance, photoluminescence and electroluminescence measurements, with recombination behaviour linked to crystallographic properties. These findings provide valuable insights into the role of processing techniques in the rejuvenation of perovskite solar cells. Additionally, they offer guidance for optimising fabrication strategies to improve film quality, device performance, stability and long-term reliability.

有机金属卤化物钙钛矿由于其具有良好的光电性能,特别是在光伏领域受到了广泛的关注。钙钛矿薄膜的形成过程是决定其结构和功能特性的关键。本研究考察了甲胺蒸汽处理和真空退火对钙钛矿薄膜结晶度、形貌和结构完整性的影响。研究了甲基碘化铅(MAPI)基钙钛矿薄膜,重点研究了其晶体结构、振动模式及其与器件性能的关系。采用一步和两步工艺,功率转换效率(pce)分别达到19.5%和18.6%。通过电容、光致发光和电致发光测量分析了陷阱状态、薄膜均匀性和界面性质的影响,并分析了与晶体学性质相关的复合行为。这些发现为加工技术在钙钛矿太阳能电池再生中的作用提供了有价值的见解。此外,他们还为优化制造策略提供指导,以提高薄膜质量,器件性能,稳定性和长期可靠性。
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引用次数: 0
Industrial-Scale Silicon Heterojunction Photovoltaic Module Towards 25% Efficiency Enabled by High-Quantum-Yield CaSrSiO4:Ce3+ Inorganic Downshifting Materials 高量子产率CaSrSiO4:Ce3+无机降移材料实现工业规模硅异质结光伏组件25%效率
IF 8 2区 材料科学 Q1 ENERGY & FUELS Pub Date : 2025-03-26 DOI: 10.1002/pip.3908
Zehua Sun, Zhengyue Xia, Dengzhou Yan, Yuhui Ji, Wei Ji, Wenjun Gu, Changlin Ding, Chao Zhang, Tao Chen, Fangdan Jiang, Chen Yang, Wenzhu Liu, Guoqiang Xing, Jian Yu

The market uptake of silicon heterojunction (SHJ) solar modules is projected to increase rapidly, which is expected to play a significant role in future sustainability. However, a major barrier to the mass production of SHJ solar modules is significant power degradation under ultraviolet (UV) irradiation. Here, we reported a 98.13% high-quantum yield and highly reliable CaSrSiO4:Ce3+ UV-to-blue–violet downshifting (UV-DS) inorganic phosphor for photovoltaic applications, which could minimize UV-induced degradation, the levelized cost of energy, and the generation of photovoltaic module waste. The CaSrSiO4:Ce3+ inorganic phosphor was synthesized via a solid-state reaction method, where Ce3+ ions preferentially occupy the 7-coordinated Ca site. As a proof of concept, an outstanding output power of 776.2 W and a module efficiency of 24.99% were achieved on 3.1 m2 industrial-scale module. Only 2.49% power degradation was observed after 180 kWh/m2 UV irradiation. A statistical lifetime assessment based on UV irradiance data of Chinese geographical locations proven that UV-DS encapsulants significantly enhanced the long-term stability of modules, with better power generation performance and economic and environmental characteristics. Our study offered a blueprint for designing SHJ photovoltaic modules sustainably and strategically for targeting geographic markets, mitigating one of the environmental risks associated with SHJ modules and accelerating practical application.

市场对硅异质结(SHJ)太阳能组件的吸收预计将迅速增加,预计将在未来的可持续性中发挥重要作用。然而,大规模生产SHJ太阳能组件的一个主要障碍是紫外线(UV)照射下的显著功率退化。在这里,我们报道了一种98.13%的高量子产率和高可靠性的CaSrSiO4:Ce3+紫外-蓝紫降移(UV-DS)无机荧光粉,用于光伏应用,可以最大限度地减少紫外线引起的降解,降低能源成本,并减少光伏组件废弃物的产生。采用固相法合成了CaSrSiO4:Ce3+无机荧光粉,其中Ce3+离子优先占据7配位Ca位点。作为概念验证,在3.1 m2的工业规模模块上实现了776.2 W的出色输出功率和24.99%的模块效率。在180 kWh/m2的紫外线照射下,功率下降仅为2.49%。基于中国地理位置紫外线辐射数据的统计寿命评估表明,UV- ds封装剂显著增强了组件的长期稳定性,具有更好的发电性能和经济环保特性。我们的研究为可持续和战略性地设计SHJ光伏组件提供了蓝图,以瞄准地理市场,减轻与SHJ组件相关的环境风险之一,并加速实际应用。
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引用次数: 0
Avoiding Fill Factor Losses in Cu(In,Ga)Se2 as a Bottom Cell in a Tandem Structure 避免Cu(in,Ga)Se2作为串联结构底部电池的填充因子损失
IF 8 2区 材料科学 Q1 ENERGY & FUELS Pub Date : 2025-03-16 DOI: 10.1002/pip.3905
Ana Kanevce, Stefan Paetel, Rico Gutzler, Dominik Bagrowski, Dimitrios Hariskos, Theresa Magorian Friedlmeier

This work aims to define the optimization criteria for Cu(In,Ga)Se2 (CIGS) as a bottom cell in a tandem structure, and to emphasize the differences from optimizing the CIGS when operating alone. Reproducing the single-cell recipes and only lowering the band gap is insufficient to optimize the bottom cell. We identified that the lack of high-energy photons, which are absorbed by the top cell, can cause a severe fill factor (FF) loss, and thus diminish the photovoltaic performance. With nonoptimized buffer layers (CdS and ZnMgO), S-shaped current-density-voltage (JV) characteristics leading to a low FF and poor performance can be observed. The S shape can be eliminated within seconds of white-light exposure and does not return for hours. Therefore, this does not pose a significant problem for single-cell operation. In the bottom-cell application, as only the low-energy part of the spectrum is available, the properties of the buffer layer(s) become crucial and additional optimization is necessary. Filtered JV measurements after white-light exposure could lead to overseeing important optimization steps. We discuss the causes for an S-shaped curve under filtered illumination, pinpoint the bottlenecks in the bottom-cell performance, and present a way to mitigate the losses.

本工作旨在定义Cu(In,Ga)Se2 (CIGS)作为串联结构底部电池的优化标准,并强调其与单独运行时CIGS优化的区别。复制单细胞配方,仅降低带隙不足以优化底部电池。我们发现,缺乏被顶部电池吸收的高能光子会导致严重的填充因子(FF)损失,从而降低光伏性能。对于未优化的缓冲层(CdS和ZnMgO),可以观察到s形的电流密度电压(JV)特性,导致低FF和较差的性能。S形可以在白光照射几秒钟内消除,几个小时内不会恢复。因此,这不会对单细胞操作造成重大问题。在底部电池应用中,由于只有频谱的低能量部分可用,缓冲层的特性变得至关重要,并且需要额外的优化。在白光照射后过滤JV测量可能导致监督重要的优化步骤。我们讨论了滤光照明下产生s形曲线的原因,指出了底部电池性能的瓶颈,并提出了一种减轻损失的方法。
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引用次数: 0
A Spatially Resolved Evaluation of Accelerated Environmental Aging on Emerging Polypropylene-Based Photovoltaic Backsheets Using Raman Spectroscopy 利用拉曼光谱对新兴聚丙烯基光伏背板的加速环境老化进行空间分辨评估
IF 8 2区 材料科学 Q1 ENERGY & FUELS Pub Date : 2025-03-13 DOI: 10.1002/pip.3904
Ashlee Aiello, Stefan Mitterhofer, Jan Obrzut, Karissa L. Jensen, Patryk Wąsik, Chiara Barretta, Gernot Oreski, Stephanie S. Watson, Lipiin Sung, Xiaohong Gu

Accelerated aging was used to assess environmental degradation in emerging co-extruded polypropylene (PP)-based backsheets under three different environmental conditions (65°C/20% relative humidity (RH), 75°C/20% RH, and 75°C/50% RH). Although differential scanning calorimetry did not measure crystallinity changes with exposure, spatially resolved Raman spectroscopy identified crystallinity increases in the core layer of aged samples, indicating a heterogeneous postcrystallization process. The Raman results were in agreement with synchrotron-based microfocused wide-angle X-ray scattering measurements. Cross-sectional nanoindentation was used to correlate localized crystallinity shifts with changes in Young's modulus. A similar trend was found where increased modulus was measured in the core layer, supporting the relationship between modulus and crystallinity. Finally, dielectric characterization was used to assess the impact of these material property changes on performance. While changes in the backsheet material properties and dielectric performance were observed with accelerated aging, these shifts generally equilibrated with time, indicating overall stability in response to environmental stressors. Additionally, the identified heterogeneous material property changes indicate that spatially resolved crystallinity measurements may be a valuable early failure indicator to be used in the assessment of PV backsheet long-term durability.

采用加速老化的方法,在三种不同的环境条件(65°C/20%相对湿度(RH)、75°C/20% RH和75°C/50% RH)下,评估了新兴共挤聚丙烯(PP)基背板的环境退化情况。虽然差示扫描量热法没有测量结晶度随曝光的变化,但空间分辨拉曼光谱发现,老化样品的核心层结晶度增加,表明非均匀的后结晶过程。拉曼结果与基于同步加速器的微聚焦广角x射线散射测量结果一致。横截面纳米压痕用于将局部结晶度的变化与杨氏模量的变化联系起来。在核心层中测量到的模量增加也有类似的趋势,这支持了模量和结晶度之间的关系。最后,利用介电特性来评估这些材料性质变化对性能的影响。随着老化的加速,背板材料性能和介电性能会发生变化,但这些变化通常随着时间的推移而平衡,表明对环境压力的响应总体上是稳定的。此外,确定的非均质材料性质变化表明,空间分辨的结晶度测量可能是一个有价值的早期失效指标,可用于评估PV背板的长期耐久性。
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引用次数: 0
Enhanced Performance of Perovskite Solar Cells Through the Application of Pure Natural Centella asiatica Extract Additives 利用纯天然积雪草提取物添加剂提高钙钛矿太阳能电池性能
IF 8 2区 材料科学 Q1 ENERGY & FUELS Pub Date : 2025-03-06 DOI: 10.1002/pip.3907
Lung-Chien Chen, Qiming Zhao

This study initially employs Cs₀.₀₅FA₀.₈₁MA₀.₁₄PbI₂.₈₆Cl₀.₁₄ as the active layer for perovskite solar cells and explores the impact of using different concentrations of natural Centella asiatica (CICA) extracts mixed with chlorobenzene (CB) as anti-solvent in the one-step method of perovskite film preparation. Centella asiatica is rich in natural antioxidants and asiatic acid. It contains many hydroxyl ions, which are capable of capturing uncoordinated heavy metal Pb atoms. We found that devices made with 15% Centella asiatica extract mixed with CB achieved the highest power conversion efficiency (PCE), increasing from 14.3% to 18.5%. Moreover, the devices maintained 85% of their initial efficiency after being stored in a glove box for 25 days.

这项研究最初采用Cs₀。₀₅FA₀。₈₁MA₀。₁₄PbI₂。₈₆Cl₀。以₁₄盐作为钙钛矿太阳能电池的活性层,探讨了采用不同浓度的天然积雪草(CICA)提取物混合氯苯(CB)作为抗溶剂,一步法制备钙钛矿薄膜的影响。积雪草富含天然抗氧化剂和积雪草酸。它含有许多羟基离子,能够捕获不配位的重金属铅原子。我们发现,以15%积雪草提取物与CB混合制成的装置具有最高的功率转换效率(PCE),从14.3%提高到18.5%。此外,在手套箱中存放25天后,这些设备保持了85%的初始效率。
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引用次数: 0
Photovoltaics Literature Survey (No. 198) 光伏文献综述(第198期)
IF 8 2区 材料科学 Q1 ENERGY & FUELS Pub Date : 2025-03-04 DOI: 10.1002/pip.3902
Ziv Hameiri
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引用次数: 0
Exploring the Synthesis of Cu2(Zn,Cd)SnS4 at High Temperatures as a Route for High-Efficiency Solar Cells 探索高温合成Cu2(Zn,Cd)SnS4作为高效太阳能电池的途径
IF 8 2区 材料科学 Q1 ENERGY & FUELS Pub Date : 2025-03-03 DOI: 10.1002/pip.3899
Outman El Khouja, Yuancai Gong, Alex Jimenez-Arguijo, Maykel Jimenez Guerra, Axel Gon Medaille, Romain Scaffidi, Arindam Basak, Cristian Radu, Denis Flandre, Bart Vermang, Sergio Giraldo, Marcel Placidi, Zacharie Jehl Li-Kao, Aurelian Catalin Galca, Edgardo Saucedo

The present research explores for the first time the intricate relationship between sulfurization temperature at unusual high temperatures (up to 700°C) and the structural/optoelectronic properties of Cu2(Zn,Cd)SnS4 (CZCTS) thin films, synthesized via a two-step sequential process involving the precursor film deposition using aprotic molecular ink followed by thermal treatment in sulfur atmosphere. X-ray diffraction patterns confirms the tetragonal structure. Scanning Electron Micrographs revealed significant grain growth, with grain sizes increasing from ~0.3 μm at 620°C to ~1.5 μm at 680°C, effectively reducing grain boundary recombination. Energy dispersive X-ray spectroscopy demonstrated a Cu-poor and Zn-rich composition, with a consistent Cd incorporation of ~3.7 at%. Raman spectroscopy showcases the homogeneity and purity of the CZCTS crystalline structure. Precise control of the sulfurization temperature plays a crucial role in determining the photovoltaic characteristics of CZCTS-based solar cells. By increasing the grain size and preventing the thermal decomposition of the CZTS phase, the photovoltaic performance peaked at a sulfurization temperature of 680°C, achieving a power conversion efficiency (PCE) of 10.4%, with an open-circuit voltage of 0.701 V, a short-circuit current density of 24.3 mA/cm2 and a fill factor of 60.8%. External quantum efficiency reached a maximum of 83.3% at 580 nm. The bandgap of the CZCTS absorber was determined to be 1.48 eV, optimal for photovoltaic applications. However, further increasing the sulfurization temperature to 700°C resulted in a lower PCE of 8.5%, attributed to interface degradation and secondary phase formation. Temperature-dependent current–voltage measurements revealed a reduction in recombination losses, with an activation energy of 1.24 eV at the CZCTS/CdS interface, indicating effective defect passivation by Cd incorporation. The optimized films, sulfurized at 680°C, displayed an absorber thickness of ~1.2 μm after sulfurization, providing efficient light absorption and charge transport. The findings not only emphasize the critical role of sulfurization temperature in engineering CZCTS film and subsequently their functionality but also provide valuable insights for fine tuning their performance in the field of photovoltaic applications.

本研究首次探索了异常高温(高达700°C)下的硫化温度与Cu2(Zn,Cd)SnS4 (CZCTS)薄膜结构/光电性能之间的复杂关系,该薄膜是通过使用非质子分子墨水沉积前驱体膜然后在硫气氛中热处理的两步顺序工艺合成的。x射线衍射图证实了其四边形结构。扫描电镜显示晶粒明显长大,晶粒尺寸从620℃时的~0.3 μm增大到680℃时的~1.5 μm,有效地减少了晶界复合。能量色散x射线光谱显示贫铜和富锌成分,Cd掺入率为~3.7 at%。拉曼光谱显示了CZCTS晶体结构的均匀性和纯度。硫化温度的精确控制是决定czcts基太阳能电池光伏特性的关键。通过增大晶粒尺寸和防止CZTS相的热分解,光伏性能在硫化温度为680℃时达到峰值,功率转换效率(PCE)为10.4%,开路电压为0.701 V,短路电流密度为24.3 mA/cm2,填充系数为60.8%。外量子效率在580 nm处达到最大值83.3%。CZCTS吸收体的带隙为1.48 eV,最适合光伏应用。然而,当硫化温度进一步提高到700℃时,由于界面降解和二次相的形成,PCE降低了8.5%。温度相关的电流-电压测量结果显示,复合损耗降低,在CZCTS/CdS界面处的活化能为1.24 eV,表明Cd掺入有效地钝化了缺陷。经680°C硫化后,膜的吸收层厚度约为1.2 μm,具有良好的光吸收和电荷输运性能。这些发现不仅强调了硫化温度在工程CZCTS薄膜及其功能中的关键作用,而且为优化其在光伏应用领域的性能提供了有价值的见解。
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引用次数: 0
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Progress in Photovoltaics
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