Progress in Photovoltaics最新文献

Photovoltaic (PV) modules are subjected to environmental stressors (UV exposure, temperature, and humidity) that cause degradation within the encapsulant and its interfaces with adjacent glass and cell substrates. To save experimental time and to enable long-term assessment with intensive degradation only taking place after many years, the development of predictive models is indispensable. Previous works have modeled the delamination of the ethylene vinyl acetate (EVA) encapsulant/glass and encapsulant/cell interfaces under field aging conditions with fundamental photochemical degradation reactions that lead to molecular scission and loss of interfacial adhesion, characterized by the fracture resistance, G_c. However, these models were fundamentally limited in that the following aspects were not incorporated: (i) molecular crosslinking in the field, (ii) synergistic autocatalytic interactions of degradation mechanisms, (iii) connection between degraded encapsulant structure and its mechanical properties, and (iv) rigorous treatment of the plasticity contribution to G_c with finite element models. Here, we present a time-dependent multiscale model that addresses these limitations and is applicable to a wide range of encapsulants and interfaces. For the reference EVA encapsulant and its interfaces with the glass and cell, the presented model predicts an initial rise in G_c in the first 3 years of field aging from crosslinking, then a subsequent sharp decline from degradation mechanisms. We used nanoindentation to measure the changes in EVA mechanical properties over exposure time to tune the model parameters. The model predictions of G_c and mechanical properties match with experimental data and show an improvement compared to previous models. The model can even predict switches in failure interfaces, such as the observed EVA/cell to EVA/glass transition. We also conducted a sensitivity analysis study by varying the degradation and crosslinking kinetic parameters to demonstrate their effects on G_c. Model extensions to polyolefin elastomer- and silicone-encapsulants and their interfaces are also demonstrated.

Potential-induced degradation (PID) may be a serious concern in photovoltaic (PV) modules and plants, particularly when approaching high system voltages (1500+ V). Here, we investigate PID occurring in bifacial rear-emitter silicon heterojunction (SHJ) solar cells encapsulated in a glass/glass (G/G) module configuration with ethylene vinyl acetate (EVA) as an encapsulant. PID testing was performed at 85°C in 85% relative humidity (RH), and the solar cells were subjected to −1 kV and +1 kV for up to 800 h. SHJ cells were found to degrade when subjected to −1 kV, and to a lesser extent when left unbiased in damp heat (DH) conditions, while the application of +1 kV prevented degradation. Although prone to PID after extended test durations, the SHJ mini-modules investigated in this study noticeably passed the industry standard (IEC 61215:2021) PID test of 96 h. The degradation was primarily characterized by losses in short-circuit current (I_SC) at the front side, followed by fill factor (FF) and open-circuit voltage (V_OC). A cross-sectional transmission electronic microscopy analysis of the laminates subjected to −1 kV highlighted a transport of sodium (Na) through the transparent conductive oxide (TCO), reaching the amorphous Si/TCO interface. The samples tested in DH conditions and with positive PID test conditions did not exhibit such a migration of Na. To account for these observations, we updated a previously proposed model describing the sensitivity of SHJ cells to water. In our degradation model, moisture in the module corrodes the glass, creating sodium hydroxide (NaOH) that then percolate through the EVA before reaching the SHJ cell. The application of a high negative bias amplifies the previous mechanism by increasing the availability of Na⁺ and also enhances the drift of Na⁺ through the EVA to the cell. Finally, we demonstrate that PID can be mitigated or suppressed at the module level by using a high-volume resistivity encapsulant with a low water vapor transmission rate (WVTR) or by encapsulating SHJ solar cells in a configuration impermeable to water (e.g., using an edge sealant).

TOPCon (tunnel oxide passivated contact) solar cell is the mainstream high-efficiency crystalline silicon solar cell structure. However, the lack of efficient passivation contact mechanisms on the front surface restricts the electrical performance ability to improve further. Selective emitter (SE) technology, considered a potential solution, needs to be more mature. This work provides a unique thermal pre-diffusion approach combined with laser treatment and post-oxidation annealing to create SE structures in TOPCon solar cells. Times for the high-temperature process are equivalent to those for a traditional homogenous emitter. The innovative thermal pre-diffusion process created a unique boron doping profile, achieving a high surface concentration of nearly 1 × 10²⁰ cm⁻³ with a shallow junction depth of approximately 0.25 μm. Laser treatment further activated boron and facilitated its diffusion, influenced by the boron silicate glass layer and surface boron atoms. Adjustments were made to improve the pre-diffusion recipe, including an additional boron deposition step, increasing non-activated boron atoms. Introducing larger pyramidal microstructures also improved the junction depth and surface concentration in the heavily doped region. Compared to homogeneous emitters, the SE structures exhibited lower surface concentration in the lightly doped region, reducing the recombination current density in the passivation region J_0,pass values. The SE structures achieved higher junction depths, limiting metal atom diffusion and reducing the current recombination density in the metal contact region J_0,metal values. The contact resistivity between metal and silicon was also decreased. Overall, introducing SE structures resulted in a batch-average efficiency improvement of 0.26%, reaching an average efficiency of 25.22% for TOPCon solar cells, and has industrial mass-producible.

All freely available plane-of-array (POA) transposition models and photovoltaic (PV) temperature and performance models in pvlib-python and pvpltools-python were examined against multiyear field data from Albuquerque, New Mexico. The data include different PV systems composed of crystalline silicon modules that vary in cell type, module construction, and materials. These systems have been characterized via IEC 61853-1 and 61853-2 testing, and the input data for each model were sourced from these system-specific test results, rather than considering any generic input data (e.g., manufacturer's specification [spec] sheets or generic Panneau Solaire [PAN] files). Six POA transposition models, 7 temperature models, and 12 performance models are included in this comparative analysis. These freely available models were proven effective across many different types of technologies. The POA transposition models exhibited average normalized mean bias errors (NMBEs) within ±3%. Most PV temperature models underestimated temperature exhibiting mean and median residuals ranging from −6.5°C to 2.7°C; all temperature models saw a reduction in root mean square error when using transient assumptions over steady state. The performance models demonstrated similar behavior with a first and third interquartile NMBEs within ±4.2% and an overall average NMBE within ±2.3%. Although differences among models were observed at different times of the day/year, this study shows that the availability of system-specific input data is more important than model selection. For example, using spec sheet or generic PAN file data with a complex PV performance model does not guarantee a better accuracy than a simpler PV performance model that uses system-specific data.

Carrier-selective contact is a fundamental issue for solar cells. For silicon heterojunction (SHJ) solar cells, it is important to improve hole transport because of the low doping efficiency of boron in amorphous silicon and the barrier stemming from valence band offset. Here, we develop a carbon dioxide (CO₂) plasma treatment (PT) process to form dipoles and defect states. We find a dipole moment caused by longitudinal distribution of H and O atoms. It improves hole transport and blocks electron transport and thus suppresses carrier recombination. In the meantime, the CO₂ PT process also results in defect states, which reduce passivation performance but improve hole hopping in the intrinsic amorphous layer. As a balance, an appropriate CO₂ PT process at the i/p interface increases fill factor and power conversion efficiency of SHJ solar cells. We emphasize, based on sufficient evidences, this work finds a distinct role of the CO₂ plasma in SHJ solar cells opposed to reported mechanisms.