Pub Date : 2021-02-26DOI: 10.51368/2307-4469-2021-9-1-25-67
The architecture and main parameters of photosensor structures and devices based on colloidal quantum dots (CQDs) of II, IV and VI group elements of the Periodic Table of D. Mendeleev are considered. Hybrid structural schemes of photoresistor, photodiode and phototransistor with absorbing layers based on HgTe, HgSe, PbS, PbSe CQDs and 2D materials for operation in various spectral ranges are com-prehensively discussed.
{"title":"Quasi-zero-dimensional structure based photoelectronics","authors":"","doi":"10.51368/2307-4469-2021-9-1-25-67","DOIUrl":"https://doi.org/10.51368/2307-4469-2021-9-1-25-67","url":null,"abstract":"The architecture and main parameters of photosensor structures and devices based on colloidal quantum dots (CQDs) of II, IV and VI group elements of the Periodic Table of D. Mendeleev are considered. Hybrid structural schemes of photoresistor, photodiode and phototransistor with absorbing layers based on HgTe, HgSe, PbS, PbSe CQDs and 2D materials for operation in various spectral ranges are com-prehensively discussed.","PeriodicalId":228648,"journal":{"name":"ADVANCES IN APPLIED PHYSICS","volume":"147 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-02-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122461266","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-02-26DOI: 10.51368/2307-4469-2021-9-1-18-24
This project is devoted to the design of algorithm of the possibility analysis of phys-ical-chemical reaction course at sapphire-metal soldering, based on the known equations of thermodynamics. There are stated the results of the thermodynamical analysis of the general methods of sapphire compounds obtaining with usage of molybdenum and wolfram metallization, and active soldering with titanium
{"title":"The thermodynamical analysis algorithm at sapphire-metal soldering design in plasma electronics devices","authors":"","doi":"10.51368/2307-4469-2021-9-1-18-24","DOIUrl":"https://doi.org/10.51368/2307-4469-2021-9-1-18-24","url":null,"abstract":"This project is devoted to the design of algorithm of the possibility analysis of phys-ical-chemical reaction course at sapphire-metal soldering, based on the known equations of thermodynamics. There are stated the results of the thermodynamical analysis of the general methods of sapphire compounds obtaining with usage of molybdenum and wolfram metallization, and active soldering with titanium","PeriodicalId":228648,"journal":{"name":"ADVANCES IN APPLIED PHYSICS","volume":"125 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-02-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114760378","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-02-26DOI: 10.51368/2307-4469-2021-9-1-3-17
The paper discusses the electrodynamic space debris collection system in the upper atmosphere based on a plasma accelerator using the upper atmosphere medium and solar radiation to create plasma flows of the required intensity. Estimates of the basic material and energy characteristics of the system are obtained, which demonstrate the technical feasibility of the proposed device.
{"title":"Using plasma flows to clean the near-earth space","authors":"","doi":"10.51368/2307-4469-2021-9-1-3-17","DOIUrl":"https://doi.org/10.51368/2307-4469-2021-9-1-3-17","url":null,"abstract":"The paper discusses the electrodynamic space debris collection system in the upper atmosphere based on a plasma accelerator using the upper atmosphere medium and solar radiation to create plasma flows of the required intensity. Estimates of the basic material and energy characteristics of the system are obtained, which demonstrate the technical feasibility of the proposed device.","PeriodicalId":228648,"journal":{"name":"ADVANCES IN APPLIED PHYSICS","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-02-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117233478","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-02-26DOI: 10.51368/2307-4469-2021-9-1-83-89
The results of the analysis in the field of developing the integral closed-cycle Stir-ling cooler operating in the temperature range (110–150) K are presented. The achievements of the development and modeling of a high-temperature cooler sys-tem for photodetector devices are presented.
{"title":"Development of a miniature integral closed-cycle Stirling cooler\u0000operating in the temperature range (110 ... 150)K","authors":"","doi":"10.51368/2307-4469-2021-9-1-83-89","DOIUrl":"https://doi.org/10.51368/2307-4469-2021-9-1-83-89","url":null,"abstract":"The results of the analysis in the field of developing the integral closed-cycle Stir-ling cooler operating in the temperature range (110–150) K are presented. The achievements of the development and modeling of a high-temperature cooler sys-tem for photodetector devices are presented.","PeriodicalId":228648,"journal":{"name":"ADVANCES IN APPLIED PHYSICS","volume":"41 11","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-02-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120949808","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
In agreement with experimental data, we present relevant new results on electronic conduction in crystalline cadmium oxide. In fact, we study the electron driftmobility in crystalline cadmium oxide, this mobility being a function of the partial pressure of oxygen in the deposition process of CdO. In our calculations, the electron mean free path is involved. This quantity is treated as the expectation value of the electron position. PACS: 73.50.-h, 73.61.-r, 73.61.Ga
{"title":"New results on electronic transport in crystalline cadmium oxide","authors":"M. Grado-Caffaro, M. Grado-Caffaro","doi":"10.12988/AAP.2019.8118","DOIUrl":"https://doi.org/10.12988/AAP.2019.8118","url":null,"abstract":"In agreement with experimental data, we present relevant new results on electronic conduction in crystalline cadmium oxide. In fact, we study the electron driftmobility in crystalline cadmium oxide, this mobility being a function of the partial pressure of oxygen in the deposition process of CdO. In our calculations, the electron mean free path is involved. This quantity is treated as the expectation value of the electron position. PACS: 73.50.-h, 73.61.-r, 73.61.Ga","PeriodicalId":228648,"journal":{"name":"ADVANCES IN APPLIED PHYSICS","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129558495","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.51368/2307-4469-2021-9-2-128-143
The paper considers the mechanisms of destruction and synthesis of macromolecules, which can be stimulated by external acoustic fields in a two-phase, oil dispersed medium containing a large number of gas bubbles. It is assumed that the dynamics of these bub-bles depends on changes in the geometry of the flow and the excitation of sound vibra-tions in the flow. Particular attention is paid to the process of changing the density of a liquid due to the effect of an internal airlift in a liquid dispersed medium. Mechanically induced kinetic changes in macromolecules (destruction and synthesis of colloidal chains) can occur when bubbles collapse. These features can be used in oil processing and well logging to assess oil saturation of reservoirs.
{"title":"Induced by acoustic fieldsprocesses of structure formation in high-molecular media","authors":"","doi":"10.51368/2307-4469-2021-9-2-128-143","DOIUrl":"https://doi.org/10.51368/2307-4469-2021-9-2-128-143","url":null,"abstract":"The paper considers the mechanisms of destruction and synthesis of macromolecules, which can be stimulated by external acoustic fields in a two-phase, oil dispersed medium containing a large number of gas bubbles. It is assumed that the dynamics of these bub-bles depends on changes in the geometry of the flow and the excitation of sound vibra-tions in the flow. Particular attention is paid to the process of changing the density of a liquid due to the effect of an internal airlift in a liquid dispersed medium. Mechanically induced kinetic changes in macromolecules (destruction and synthesis of colloidal chains) can occur when bubbles collapse. These features can be used in oil processing and well logging to assess oil saturation of reservoirs.","PeriodicalId":228648,"journal":{"name":"ADVANCES IN APPLIED PHYSICS","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123364188","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.51368/2307-4469-2021-9-2-144-152
Wehave recorded geometric-phase diffraction gratingusing the method of holography on a thin layer of dichroic dye. A transmission liquid crystal cell hasbeen assembled inorder to obtain electrically-controlled diffraction in visible range. Also, using software for electrooptical effects modeling wehavecalculated the diffraction efficiency (DE) of the LC-based phase grating as a function of the voltage amplitude at the electrodes,es-timatedtheDEvariation as a function of LCcell thickness, LC materialbirefringenceand the radiation wavelength. The experimental data qualitatively matched with calcu-lation results. 1-st order DE of16% (at 532 nm) has been obtainedforsingle-sided phase grating LC. Furthermore, we have observed the decrease ofDEwith the increase of radiation wavelength.
{"title":"Efficiency of diffraction gratings based on liquid crystals","authors":"","doi":"10.51368/2307-4469-2021-9-2-144-152","DOIUrl":"https://doi.org/10.51368/2307-4469-2021-9-2-144-152","url":null,"abstract":"Wehave recorded geometric-phase diffraction gratingusing the method of holography on a thin layer of dichroic dye. A transmission liquid crystal cell hasbeen assembled inorder to obtain electrically-controlled diffraction in visible range. Also, using software for electrooptical effects modeling wehavecalculated the diffraction efficiency (DE) of the LC-based phase grating as a function of the voltage amplitude at the electrodes,es-timatedtheDEvariation as a function of LCcell thickness, LC materialbirefringenceand the radiation wavelength. The experimental data qualitatively matched with calcu-lation results. 1-st order DE of16% (at 532 nm) has been obtainedforsingle-sided phase grating LC. Furthermore, we have observed the decrease ofDEwith the increase of radiation wavelength.","PeriodicalId":228648,"journal":{"name":"ADVANCES IN APPLIED PHYSICS","volume":"51 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131453108","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.51368/2307-4469-2021-9-2-97-111
The main properties of type II superlattices (T2SL) are considered. The description of various heterojunction types and energy conditions of their realization is given. The results of theoretical and experimental studies of optical and electrical proper-ties of T2SLs based on InAs/GaSb, InAs/GaInSb and InAs/InAsSb are presented. Based on the results of qualitative analysis and evaluation of the characteristics of T2SL relative to classical semiconductor compounds used in infrared photoelectronics (HgCdTe, InSb and QWIP structures), the advantages and disad-vantages of T2SL are identified and described.A comparison of type II superlattices based on InAs/GaSb, InAs/GaInSb and InAs/InAsSb was carried out, the results of which showed the prospects of T2SL applications in the manufacturing state-of-art and promising infrared photodetectors
{"title":"The current state of the development and research of type II superlattices for infrared photodetective devices (a review)","authors":"","doi":"10.51368/2307-4469-2021-9-2-97-111","DOIUrl":"https://doi.org/10.51368/2307-4469-2021-9-2-97-111","url":null,"abstract":"The main properties of type II superlattices (T2SL) are considered. The description of various heterojunction types and energy conditions of their realization is given. The results of theoretical and experimental studies of optical and electrical proper-ties of T2SLs based on InAs/GaSb, InAs/GaInSb and InAs/InAsSb are presented. Based on the results of qualitative analysis and evaluation of the characteristics of T2SL relative to classical semiconductor compounds used in infrared photoelectronics (HgCdTe, InSb and QWIP structures), the advantages and disad-vantages of T2SL are identified and described.A comparison of type II superlattices based on InAs/GaSb, InAs/GaInSb and InAs/InAsSb was carried out, the results of which showed the prospects of T2SL applications in the manufacturing state-of-art and promising infrared photodetectors","PeriodicalId":228648,"journal":{"name":"ADVANCES IN APPLIED PHYSICS","volume":"55 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132675551","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.51368/2307-4469-2021-9-2-112-127
The review analyzes the development of domestic technology for manufacturing highly sensitive and stable photoresistors from solid solutions of the CdxHg1-xTe tri-ple system since the 70s of the last century. The volt sensitivity of modern photoresistors made of heteroepitaxial structures n–CdxHg1-xTe, obtained by molecu-lar beam epitaxyon a gallium arsenide substrate, in the spectral range of 8–12 mi-crons with a photosensitive pixelsize of 5050 microns, operating under nonequilibriumcon-ditions of the exclusion of minority charge carriers, reaches a value of Suλmax107V/W with a specific detection capacity D*λmax (1200.1,14o) of more than51011cmGz1/2W-1at liquid nitrogen temperature. The high voltage sensi-tivity and low power output (510-7W) of photoresistors in the design of a with a radialarrangement of contactsallow you to create focal matrices based on them with a number of pixels of106.
{"title":"Photoresistors made of CdхHg1-хTematerial(a review)","authors":"","doi":"10.51368/2307-4469-2021-9-2-112-127","DOIUrl":"https://doi.org/10.51368/2307-4469-2021-9-2-112-127","url":null,"abstract":"The review analyzes the development of domestic technology for manufacturing highly sensitive and stable photoresistors from solid solutions of the CdxHg1-xTe tri-ple system since the 70s of the last century. The volt sensitivity of modern photoresistors made of heteroepitaxial structures n–CdxHg1-xTe, obtained by molecu-lar beam epitaxyon a gallium arsenide substrate, in the spectral range of 8–12 mi-crons with a photosensitive pixelsize of 5050 microns, operating under nonequilibriumcon-ditions of the exclusion of minority charge carriers, reaches a value of Suλmax107V/W with a specific detection capacity D*λmax (1200.1,14o) of more than51011cmGz1/2W-1at liquid nitrogen temperature. The high voltage sensi-tivity and low power output (510-7W) of photoresistors in the design of a with a radialarrangement of contactsallow you to create focal matrices based on them with a number of pixels of106.","PeriodicalId":228648,"journal":{"name":"ADVANCES IN APPLIED PHYSICS","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128869489","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Yushi Suzuki, T. Miyanaga, K. Yamauchi, Naohiro Mori, Reki Nakamura
We use in-situ X-ray absorption fine structure (XAFS) to examine the relation between Ag clusters or Ag ions and properties of photoluminescence (PL). The Ag clusters are generated in the cavity of Ag-type zeolite-A, X, and Y heating in atmosphere. The Ag clusters in the zeolite cavity break down when cooled to room temperature after heating in atmosphere. Results of this study suggest that collapsing Ag cluster plays an important role in the generation of strong PL bands and that Ag clusters might not be a direct species of PL. Results also show that the local sites of Ag ions differ slightly from the unheated species induced by the formation and destruction of Ag clusters.
{"title":"Photoluminescence of Ag-loaded A, X, and Y type zeolites heat-treated in atmosphere","authors":"Yushi Suzuki, T. Miyanaga, K. Yamauchi, Naohiro Mori, Reki Nakamura","doi":"10.12988/aap.2019.985","DOIUrl":"https://doi.org/10.12988/aap.2019.985","url":null,"abstract":"We use in-situ X-ray absorption fine structure (XAFS) to examine the relation between Ag clusters or Ag ions and properties of photoluminescence (PL). The Ag clusters are generated in the cavity of Ag-type zeolite-A, X, and Y heating in atmosphere. The Ag clusters in the zeolite cavity break down when cooled to room temperature after heating in atmosphere. Results of this study suggest that collapsing Ag cluster plays an important role in the generation of strong PL bands and that Ag clusters might not be a direct species of PL. Results also show that the local sites of Ag ions differ slightly from the unheated species induced by the formation and destruction of Ag clusters.","PeriodicalId":228648,"journal":{"name":"ADVANCES IN APPLIED PHYSICS","volume":"371 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132706103","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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