The dependence of the threshold voltage of MISS upon the doping concentration of the epilayer is discussed based upon a thyristor analogy. The threshold voltage reaches a maximum value at medium doping concentrations. At low doping concentrations the threshold voltage is limited by the punch-through voltage, at high doping concentrations by the breakdown voltage. At low doping concentrations the threshold voltage is very sensitive to the current amplification of the tunnel MIS part of the device and to two-dimensional effects. Es wird die Abhangigkeit der Kippspannung von der Dotierungskonzentration mit Hilfe der Thyristoranalogie diskutiert. Die Kippspannung erreicht einen maximalen Wert bei mittleren Konzentrationen. Bei niedrigen Konzentrationen wird die Kippspannung von der Punch-Through-Spannung, bei hoheren Konzentrationen von der Durchbruchspannung begrenzt. Bei niedrigen Konzentrationen ist die Kippspannung sehr empfindlich gegen die Stromverstarkung der Tunnel-MIS Diode und zweidimensionale Effekte.
{"title":"Approximate Calculation of the Switching Voltage of MISS","authors":"I. Zolomy","doi":"10.1002/PSSA.2211110140","DOIUrl":"https://doi.org/10.1002/PSSA.2211110140","url":null,"abstract":"The dependence of the threshold voltage of MISS upon the doping concentration of the epilayer is discussed based upon a thyristor analogy. The threshold voltage reaches a maximum value at medium doping concentrations. At low doping concentrations the threshold voltage is limited by the punch-through voltage, at high doping concentrations by the breakdown voltage. At low doping concentrations the threshold voltage is very sensitive to the current amplification of the tunnel MIS part of the device and to two-dimensional effects. \u0000 \u0000 \u0000 \u0000Es wird die Abhangigkeit der Kippspannung von der Dotierungskonzentration mit Hilfe der Thyristoranalogie diskutiert. Die Kippspannung erreicht einen maximalen Wert bei mittleren Konzentrationen. Bei niedrigen Konzentrationen wird die Kippspannung von der Punch-Through-Spannung, bei hoheren Konzentrationen von der Durchbruchspannung begrenzt. Bei niedrigen Konzentrationen ist die Kippspannung sehr empfindlich gegen die Stromverstarkung der Tunnel-MIS Diode und zweidimensionale Effekte.","PeriodicalId":240242,"journal":{"name":"16 January","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1989-01-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115020521","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Annealing Temperature Dependence of the l/f Noise in Si-Implanted GaAs","authors":"J. Gong, S. H. Yang","doi":"10.1002/PSSA.2211110153","DOIUrl":"https://doi.org/10.1002/PSSA.2211110153","url":null,"abstract":"","PeriodicalId":240242,"journal":{"name":"16 January","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1989-01-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133421143","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Diffusion from a Gaussian Half-Profile at an Absorbing Boundary in the Presence of an Electric Field","authors":"H. Kahnt, T. Possner","doi":"10.1002/PSSA.2211110144","DOIUrl":"https://doi.org/10.1002/PSSA.2211110144","url":null,"abstract":"","PeriodicalId":240242,"journal":{"name":"16 January","volume":"71 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1989-01-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116353275","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Electrodeposition of Thin Film Semiconductors","authors":"C. Lokhande, S. Pawar","doi":"10.1002/PSSA.2211110102","DOIUrl":"https://doi.org/10.1002/PSSA.2211110102","url":null,"abstract":"","PeriodicalId":240242,"journal":{"name":"16 January","volume":"240 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1989-01-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133755847","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Schottky Barrier Height Modification on n-Type Silicon by Wet Chemical Etching","authors":"G. Adegboyega","doi":"10.1002/PSSA.2211110149","DOIUrl":"https://doi.org/10.1002/PSSA.2211110149","url":null,"abstract":"","PeriodicalId":240242,"journal":{"name":"16 January","volume":"234 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1989-01-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133775130","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Distribution of Traps in ZnSe:Cu Crystals Obtained by the Fractional Glow Technique","authors":"F. Firszt, H. Oczkowski","doi":"10.1002/PSSA.2211110165","DOIUrl":"https://doi.org/10.1002/PSSA.2211110165","url":null,"abstract":"","PeriodicalId":240242,"journal":{"name":"16 January","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1989-01-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116114207","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
B. B. Boiko, A. Akimov, V. Gatalskaya, S. Demyanov, L. Kurochkin, M. Petrovskii, E. K. Stribuk, V. M. Finskaya
{"title":"Anomalous Electrical Resistance of Y-Ba-Cu-O System Ceramics","authors":"B. B. Boiko, A. Akimov, V. Gatalskaya, S. Demyanov, L. Kurochkin, M. Petrovskii, E. K. Stribuk, V. M. Finskaya","doi":"10.1002/PSSA.2211110160","DOIUrl":"https://doi.org/10.1002/PSSA.2211110160","url":null,"abstract":"","PeriodicalId":240242,"journal":{"name":"16 January","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1989-01-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124821281","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Phase Transition in (CH3NH3)3Bi2Cl9","authors":"R. Jakubas, P. Tomaszewski, L. Sobczyk","doi":"10.1002/PSSA.2211110148","DOIUrl":"https://doi.org/10.1002/PSSA.2211110148","url":null,"abstract":"","PeriodicalId":240242,"journal":{"name":"16 January","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1989-01-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129585213","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Magnetic Susceptibility and Electrophysical Properties of SiTe Single Crystals","authors":"F. M. Kamarly, N. Guseinov, A. Yangirov","doi":"10.1002/PSSA.2211110146","DOIUrl":"https://doi.org/10.1002/PSSA.2211110146","url":null,"abstract":"","PeriodicalId":240242,"journal":{"name":"16 January","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1989-01-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124239745","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
V. Goltsev, V. V. Khodasevich, G. Götz, I. Prikhodko, V. M. Drako, V. Uglov
{"title":"Study of Ion Bombardment of Double-Layer Thin Zr/Ni Films","authors":"V. Goltsev, V. V. Khodasevich, G. Götz, I. Prikhodko, V. M. Drako, V. Uglov","doi":"10.1002/PSSA.2211110145","DOIUrl":"https://doi.org/10.1002/PSSA.2211110145","url":null,"abstract":"","PeriodicalId":240242,"journal":{"name":"16 January","volume":"131 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1989-01-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131300352","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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