{"title":"Anomalous Skin Effect in a Cylindrical Conductor","authors":"R. Fuchs, K. Ghosh","doi":"10.1002/PSSA.2211110159","DOIUrl":"https://doi.org/10.1002/PSSA.2211110159","url":null,"abstract":"","PeriodicalId":240242,"journal":{"name":"16 January","volume":"63 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1989-01-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114501972","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The influence of the substituents on the microstructure of nickel ferrites from the system NiCaCuCoZnMnAlFeO4 + y SiO2 where 0 ≦ x1 ≦ 0.02; 0 ≦ x2 ≦ 0.3; 0 ≦ x3 ≦ 0.06; 0 ≦ x4 ≦ 0.5; 0 ≦ x5 ≦ 0.06; 0 ≦ x6 ≦ 0.2; 1.8 ≦ x7 ≦ 2; 0 ≦ y ≦ 0.3 wt%; x6 + x7 = 2; is investigated. Electrical resistance measurements are performed by a complex impedance method which permits the evaluation of the contributions due to the resistance of the bulk material and the grain boundaries. It is found that the dielectric and resonance magnetic losses can be improved to a certain degree by the average grain size. [Russian Text Ignored].
NiCaCuCoZnMnAlFeO4 + y SiO2体系(0≦x1≦0.02)中取代基对镍铁氧体微观结构的影响;0≦x2≦0.3;0≦x3≦0.06;0≦x4≦0.5;0≦x5≦0.06;0≦x6≦0.2;1.8≦x7≦2;0≦y≦0.3 wt%;X6 + x7 = 2;是调查。电阻测量是通过复杂阻抗方法进行的，该方法允许评估由于大块材料和晶界的电阻而产生的贡献。发现平均晶粒尺寸可以在一定程度上改善介电损耗和谐振磁损耗。[忽略俄语文本]。
{"title":"Influence of the Microstructure on Some Microwave Properties of Substituted Nickel Ferrites","authors":"D. Vladikova, L. Ilkov, S. Karbanov","doi":"10.1002/PSSA.2211110115","DOIUrl":"https://doi.org/10.1002/PSSA.2211110115","url":null,"abstract":"The influence of the substituents on the microstructure of nickel ferrites from the system NiCaCuCoZnMnAlFeO4 + y SiO2 where 0 ≦ x1 ≦ 0.02; 0 ≦ x2 ≦ 0.3; 0 ≦ x3 ≦ 0.06; 0 ≦ x4 ≦ 0.5; 0 ≦ x5 ≦ 0.06; 0 ≦ x6 ≦ 0.2; 1.8 ≦ x7 ≦ 2; 0 ≦ y ≦ 0.3 wt%; x6 + x7 = 2; is investigated. Electrical resistance measurements are performed by a complex impedance method which permits the evaluation of the contributions due to the resistance of the bulk material and the grain boundaries. It is found that the dielectric and resonance magnetic losses can be improved to a certain degree by the average grain size. \u0000 \u0000 \u0000 \u0000[Russian Text Ignored].","PeriodicalId":240242,"journal":{"name":"16 January","volume":"76 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1989-01-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121915761","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The stress-induced changes of the amplitudes and of the modulation wave-vectors of the “triple-q” incommensurate phase of quartz-like crystals are calculated using a phenomenological theory, in the small stress limit. The temperature dependence of these changes and in particular their behaviour at the “triple-q”-“single-q” transition are also discussed. Les changements des amplitudes et des vecteurs d'onde de modulation induits par une contrainte dans la phase incommensurable „triple-q” de cristaux du type du quartz sont calcules en utilisant une theorie phenomenologique, dans la limite des faibles contraintes. La dependance en temperature de ces changements, et en particulier leur comportement a la transition „triple-q”-„mono-q” sont egalement discutes.
{"title":"Stress-Induced Effects in the Incommensurate Phase of Quartz","authors":"M. Vallade, M. Petit","doi":"10.1002/PSSA.2211110116","DOIUrl":"https://doi.org/10.1002/PSSA.2211110116","url":null,"abstract":"The stress-induced changes of the amplitudes and of the modulation wave-vectors of the “triple-q” incommensurate phase of quartz-like crystals are calculated using a phenomenological theory, in the small stress limit. The temperature dependence of these changes and in particular their behaviour at the “triple-q”-“single-q” transition are also discussed. \u0000 \u0000 \u0000 \u0000Les changements des amplitudes et des vecteurs d'onde de modulation induits par une contrainte dans la phase incommensurable „triple-q” de cristaux du type du quartz sont calcules en utilisant une theorie phenomenologique, dans la limite des faibles contraintes. La dependance en temperature de ces changements, et en particulier leur comportement a la transition „triple-q”-„mono-q” sont egalement discutes.","PeriodicalId":240242,"journal":{"name":"16 January","volume":"55 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1989-01-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126214652","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The recovery process of hydrogen dissolved in excess in nickel based alloys is studied by means of the hydrogen quenching method and electrical resistance measurement after isochronal and isothermal annealing treatments. A recovery stage of the electrical resistance due to hydrogen in the alloys shows similar characteristics as observed in resistance decay curves due to H in pure nickel, e.g., size dependence of the recovery rate and the shape of the isothermal recovery curve. Diffusion coefficients of hydrogen are obtained for the alloys in the range of 240 to 360 K with a similar method used for pure nickel. The values obtained for high temperatures are nearly the same as those for pure nickel, but at low temperature, especially for 0.10% Cu and 0.10% Fe alloys, are clearly larger than those in pure nickel. Since the diffusivity of hydrogen is depressed by trapping at alloying elements in alloys, this anomalous behaviour suggests that another process, e.g., grain boundary diffusion, in addition to bulk lattice diffusion becomes important in the low temperature range. Der Erholungsprozes von gelostem uberschussigem Wasserstoff in Nickel-Legierungen wird mit der Wasserstoffabschreckungsmethode und mit Messungen des elektrischen Widerstands nach isochronen und isothermen Temperbehandlungen untersucht. Eine Erholungsstufe des elektrischen Widerstands durch den Wasserstoff in den Legierungen zeigt ahnliche Charakteristiken, wie sie in den Widerstandsabklingkurven aufgrund von H in reinem Nickel beobachtet werden, d. h. Grosenabhangigkeit der Erholungsrate und der Form der isothermen Erholungskurve. Diffusionskoeffizienten von Wasserstoff werden fur die Legierungen im Bereich von 240 bis 360 K mit einer ahnlichen Methode erhalten, wie sie fur reines Nickel benutzt wurde. Die Werte fur hohe Temperaturen sind nahezu dieselben wie die fur reines Nickel, sind jedoch bei niedriger Temperatur, insbesondere fur 0,10% Cu- und 0,10% Fe-Legierungen deutlich groser als die in reinem Nickel. Da das Diffusionsvermogen von Wasserstoff durch Anlagerung an Legierungselementen in den Legierungen erniedrigt wird, weist dieses anomale Verhalten darauf hin, das ein anderer Prozes, d. h. Korngrenzendiffusion zusatzlich zur Volumengitterdiffusion im Niedertemperaturbereich wesentlich wird.
采用氢淬法和等时等温退火后的电阻测量方法，研究了镍基合金中过量溶氢的回收过程。合金中氢引起的电阻恢复阶段与纯镍中氢引起的电阻衰减曲线表现出相似的特征，例如，回收率的大小依赖性和等温恢复曲线的形状。在240 ~ 360 K范围内，用与纯镍相似的方法获得了合金的氢扩散系数。在高温下得到的数值与纯镍几乎相同，但在低温下，特别是0.10% Cu和0.10% Fe合金的数值明显大于纯镍。由于氢的扩散率被合金中的合金元素捕获而降低，这种异常行为表明，在低温范围内，除了体晶格扩散之外，还有另一种过程，例如晶界扩散变得重要。Der Erholungsprozes von gelostem uberschussigem Wasserstoff in Nickel-Legierungen; mit Der wasserstoffabschreckungsmethod; mit Messungen des elektrischen Widerstands nach等时仪和等温仪。Eine Erholungsstufe des elektrischen widerstand durch den Wasserstoff in den legiererungen zeight ahnliche charteristiken, wie sie in den Widerstandsabklingkurven aufgrund von H in reinem Nickel bebachtet werden, d.h . Grosenabhangigkeit der Erholungsrate and der Form der isothermen Erholungskurve。扩散效率的研究进展[j]， [j]， [j]， [j]， [j]， [j]， [j]， [j]。死Werte毛皮hohe Temperaturen信德nahezu dieselben是不是死皮莱因斯镍、信德jedoch贝niedriger温,insbesondere毛皮0,10%铜-和0、10% Fe-Legierungen deutlich groser als死在reinem镍。[a] [d] [c] [c] [c] [c] [c] [c] [c] [c] [c] [c] [c] [c] [c] [c] [c] [c] [c] [c] [c] [c] [c] [c] [c] [c]。
{"title":"Diffusion of Hydrogen in Nickel Based Alloys","authors":"K. Yamakawa, B. Hohler, H. Kronmüller","doi":"10.1002/PSSA.2211110109","DOIUrl":"https://doi.org/10.1002/PSSA.2211110109","url":null,"abstract":"The recovery process of hydrogen dissolved in excess in nickel based alloys is studied by means of the hydrogen quenching method and electrical resistance measurement after isochronal and isothermal annealing treatments. A recovery stage of the electrical resistance due to hydrogen in the alloys shows similar characteristics as observed in resistance decay curves due to H in pure nickel, e.g., size dependence of the recovery rate and the shape of the isothermal recovery curve. Diffusion coefficients of hydrogen are obtained for the alloys in the range of 240 to 360 K with a similar method used for pure nickel. The values obtained for high temperatures are nearly the same as those for pure nickel, but at low temperature, especially for 0.10% Cu and 0.10% Fe alloys, are clearly larger than those in pure nickel. Since the diffusivity of hydrogen is depressed by trapping at alloying elements in alloys, this anomalous behaviour suggests that another process, e.g., grain boundary diffusion, in addition to bulk lattice diffusion becomes important in the low temperature range. \u0000 \u0000 \u0000 \u0000Der Erholungsprozes von gelostem uberschussigem Wasserstoff in Nickel-Legierungen wird mit der Wasserstoffabschreckungsmethode und mit Messungen des elektrischen Widerstands nach isochronen und isothermen Temperbehandlungen untersucht. Eine Erholungsstufe des elektrischen Widerstands durch den Wasserstoff in den Legierungen zeigt ahnliche Charakteristiken, wie sie in den Widerstandsabklingkurven aufgrund von H in reinem Nickel beobachtet werden, d. h. Grosenabhangigkeit der Erholungsrate und der Form der isothermen Erholungskurve. Diffusionskoeffizienten von Wasserstoff werden fur die Legierungen im Bereich von 240 bis 360 K mit einer ahnlichen Methode erhalten, wie sie fur reines Nickel benutzt wurde. Die Werte fur hohe Temperaturen sind nahezu dieselben wie die fur reines Nickel, sind jedoch bei niedriger Temperatur, insbesondere fur 0,10% Cu- und 0,10% Fe-Legierungen deutlich groser als die in reinem Nickel. Da das Diffusionsvermogen von Wasserstoff durch Anlagerung an Legierungselementen in den Legierungen erniedrigt wird, weist dieses anomale Verhalten darauf hin, das ein anderer Prozes, d. h. Korngrenzendiffusion zusatzlich zur Volumengitterdiffusion im Niedertemperaturbereich wesentlich wird.","PeriodicalId":240242,"journal":{"name":"16 January","volume":"61 2","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1989-01-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131579421","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The Ti K valence band emission spectra (VBXES) and the Ti K near edge absorption spectra (XANES) of some polycrystalline titanium oxides and perovskites, including also the polytitanate Ba2Ti9O20, are investigated. Characteristic relations between the spectra and the structure and composition of the materials are found. They can be used for fundamental research of the electronic structure but also for analytical applications at working with these compounds which are basic materials for ferroelectric and semiconducting ceramics. Die Ti K-Valenzbandemission (VBXES) und die kantennahen Ti K-Absorptionsspektren (XANES) von einigen polykristallinen Titanoxiden und -perowskiten, einschlieslich auch des Polytitanats Ba2Ti9O20, werden untersucht. Charakteristische Zusammenhange zwischen den Spektren und der Struktur und Zusammensetzung der Materialien werden gefunden. Sie konnen fur Grundlagenuntersuchungen zur elektronischen Struktur genutzt werden, aber auch fur analytische Zwecke bei der Arbeit mit diesen Verbindungen, welche Basismaterialien fur ferroelektrische und halbleitende Keramiken darstellen.
{"title":"X-Ray Spectroscopic Investigations of Titanium Oxides and Basic Materials for Ferroelectric Ceramics","authors":"E. Schulz, G. Dräger, W. Czolbe, O. Brümmer","doi":"10.1002/PSSA.2211110138","DOIUrl":"https://doi.org/10.1002/PSSA.2211110138","url":null,"abstract":"The Ti K valence band emission spectra (VBXES) and the Ti K near edge absorption spectra (XANES) of some polycrystalline titanium oxides and perovskites, including also the polytitanate Ba2Ti9O20, are investigated. Characteristic relations between the spectra and the structure and composition of the materials are found. They can be used for fundamental research of the electronic structure but also for analytical applications at working with these compounds which are basic materials for ferroelectric and semiconducting ceramics. \u0000 \u0000 \u0000 \u0000Die Ti K-Valenzbandemission (VBXES) und die kantennahen Ti K-Absorptionsspektren (XANES) von einigen polykristallinen Titanoxiden und -perowskiten, einschlieslich auch des Polytitanats Ba2Ti9O20, werden untersucht. Charakteristische Zusammenhange zwischen den Spektren und der Struktur und Zusammensetzung der Materialien werden gefunden. Sie konnen fur Grundlagenuntersuchungen zur elektronischen Struktur genutzt werden, aber auch fur analytische Zwecke bei der Arbeit mit diesen Verbindungen, welche Basismaterialien fur ferroelektrische und halbleitende Keramiken darstellen.","PeriodicalId":240242,"journal":{"name":"16 January","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1989-01-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133342692","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The Blaha effect includes both, the effect of oscillatory dislocation on the plastic deformation and the effect of plastic deformation on the internal friction. It is found from the Blaha effect measurement for alkali halide crystals that the dislocation moves during plastic deformation by overcoming two kinds of obstacles such as tetragonal defects and forest dislocations. The Blaha effect measurement is very useful for studying the plastic deformation of materials. Der Blaha-Effekt beinhaltet zwei Effekte, den Einflus der Schwingungen der Versetzungen auf die plastische Verformung und den Einflus der plastischen Verformung auf die innere Reibung. Bei Messungen des Blaha-Effekts in Alkalihalogenideinkristallen wird gefunden, das die Versetzungen sich wahrend der plastischen Verformung durch Uberwinden zweier Arten von Hindernissen, tetragonalen Defekten und Waldversetzungen, bewegen. Die Messungen des Blaha-Effekts sind fur die Erforschung der plastischen Verformung fester Korper von grosem Nutzen.
{"title":"Relation between Plastic Deformation and the Blaha Effect for Alkali Halide Crystals","authors":"T. Ohgaku, N. Takeuchi","doi":"10.1002/PSSA.2211110117","DOIUrl":"https://doi.org/10.1002/PSSA.2211110117","url":null,"abstract":"The Blaha effect includes both, the effect of oscillatory dislocation on the plastic deformation and the effect of plastic deformation on the internal friction. It is found from the Blaha effect measurement for alkali halide crystals that the dislocation moves during plastic deformation by overcoming two kinds of obstacles such as tetragonal defects and forest dislocations. The Blaha effect measurement is very useful for studying the plastic deformation of materials. \u0000 \u0000 \u0000 \u0000Der Blaha-Effekt beinhaltet zwei Effekte, den Einflus der Schwingungen der Versetzungen auf die plastische Verformung und den Einflus der plastischen Verformung auf die innere Reibung. Bei Messungen des Blaha-Effekts in Alkalihalogenideinkristallen wird gefunden, das die Versetzungen sich wahrend der plastischen Verformung durch Uberwinden zweier Arten von Hindernissen, tetragonalen Defekten und Waldversetzungen, bewegen. Die Messungen des Blaha-Effekts sind fur die Erforschung der plastischen Verformung fester Korper von grosem Nutzen.","PeriodicalId":240242,"journal":{"name":"16 January","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1989-01-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114888188","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The EPR spectra of the paramagnetic centres SO, SO, and CrO are used to probe the local dynamics of LiNaSO4 crystal in the 100 to 500 K temperature range. It is shown that high mobility of Li+ ions takes place well below the phase transition temperature to the fast-ion-conducting phase. The motions of Li+ ions and SO anions are briefly considered in relation to the phase transition mechanism. Die EPR-Spektren der paramagnetischen Zentren SO, SO und CrO werden benutzt, um die lokale Dynamik von LiNaSO4-Kristallen im Temperaturbereich von 100 bis 400 K zu sondieren. Es wird gezeigt, das die hohe Beweglichkeit der Li+-Ionen bereits unterhalb der Phasenubergangstemperatur zur Leitungsphase der schnellen Ionen einsetzt. Die Bewegungen der Li+-Ionen und SO-Anionen werden kurz bezuglich des Phasenubergangsmechanismus diskutiert.
{"title":"EPR Studies of LiNaSO4 Cr6+ Doped Monocrystals after X-Ray Irradiation","authors":"S. Waplak, T. Krajewski","doi":"10.1002/PSSA.2211110128","DOIUrl":"https://doi.org/10.1002/PSSA.2211110128","url":null,"abstract":"The EPR spectra of the paramagnetic centres SO, SO, and CrO are used to probe the local dynamics of LiNaSO4 crystal in the 100 to 500 K temperature range. It is shown that high mobility of Li+ ions takes place well below the phase transition temperature to the fast-ion-conducting phase. The motions of Li+ ions and SO anions are briefly considered in relation to the phase transition mechanism. \u0000 \u0000 \u0000 \u0000Die EPR-Spektren der paramagnetischen Zentren SO, SO und CrO werden benutzt, um die lokale Dynamik von LiNaSO4-Kristallen im Temperaturbereich von 100 bis 400 K zu sondieren. Es wird gezeigt, das die hohe Beweglichkeit der Li+-Ionen bereits unterhalb der Phasenubergangstemperatur zur Leitungsphase der schnellen Ionen einsetzt. Die Bewegungen der Li+-Ionen und SO-Anionen werden kurz bezuglich des Phasenubergangsmechanismus diskutiert.","PeriodicalId":240242,"journal":{"name":"16 January","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1989-01-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131067485","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Previous methods for determining whether stacking faults in f.c.c. materials are extrinsic or intrinsic make use of an asymmetry in dark field images which is due to the effects of absorption. As a result, the techniques are more difficult to apply in thinner regions of a crystal and in crystals with low absorption, such as silicon. A method for determining the nature of stacking faults in f.c.c. materials is presented which does not depend on absorption effects. The method makes use of an asymmetry in bright field images which is obtained when non-symmetrical Laue diffraction conditions prevail and/or the stacking fault is inclined so that the column approximation is not valid. These images can provide sufficient information to apply either the method of Hashimoto et al. or the method of Gevers et al. with the rules for the direction of the reciprocal lattice vector reversed.
{"title":"An Electron Microscope Method for Determining the Nature of Stacking Faults in F.C.C. Materials which Does not Rely on Effects of Absorption","authors":"H. .. Kim, S. S. Sheinin","doi":"10.1002/PSSA.2211110104","DOIUrl":"https://doi.org/10.1002/PSSA.2211110104","url":null,"abstract":"Previous methods for determining whether stacking faults in f.c.c. materials are extrinsic or intrinsic make use of an asymmetry in dark field images which is due to the effects of absorption. As a result, the techniques are more difficult to apply in thinner regions of a crystal and in crystals with low absorption, such as silicon. A method for determining the nature of stacking faults in f.c.c. materials is presented which does not depend on absorption effects. The method makes use of an asymmetry in bright field images which is obtained when non-symmetrical Laue diffraction conditions prevail and/or the stacking fault is inclined so that the column approximation is not valid. These images can provide sufficient information to apply either the method of Hashimoto et al. or the method of Gevers et al. with the rules for the direction of the reciprocal lattice vector reversed.","PeriodicalId":240242,"journal":{"name":"16 January","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1989-01-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121099195","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Unified Inverted Defect Model for GaAs Schottky Barrier Formation","authors":"A. Sakalas, S. Zhukauskas","doi":"10.1002/PSSA.2211110151","DOIUrl":"https://doi.org/10.1002/PSSA.2211110151","url":null,"abstract":"","PeriodicalId":240242,"journal":{"name":"16 January","volume":"160 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1989-01-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133531526","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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