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2022 IEEE Asia Pacific Conference on Circuits and Systems (APCCAS)最新文献

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A Neural Recording IC Design with on-chip CMOS Electrode Array for Brain-machine Interface 基于片上CMOS电极阵列的脑机接口神经记录集成电路设计
Pub Date : 2022-11-11 DOI: 10.1109/APCCAS55924.2022.10090361
Ronghao Zhang, Xu Liu, Zhijie Chen, Peiyuan Wan, Tao Chen
This paper presents an integrated circuit design for neural recording chip with integrated CMOS electrode array. The implementation of on-chip electrode array can greatly improve the implantability of neural recording systems. The chip is mainly composed of a neural recording analog front end and an $8times 8$ microelectrode array designed in CMOS process technology. The analog front end of the neural recording circuit adopts chopper technique, which effectively reduces the low-frequency noise. The whole circuit has been designed in Cadence using the SMIC 180-nm CMOS process. The simulation results show that the signal with a frequency ranging from 0-2kHz and the amplitude ranging from $0-500 mu mathrm{V}$ can be independently recorded through the electrodes with a control terminal. The electrode array and the recording analog front end IC are partly overlapped using different metal layers, saving the chip area. The chip area of the final circuit with 64 electrodes is only 1400 $mu mathrm{m}times 760 mu mathrm{m}$.
本文提出了一种集成CMOS电极阵列的神经记录芯片的集成电路设计。片上电极阵列的实现可以大大提高神经记录系统的可移植性。该芯片主要由神经记录模拟前端和采用CMOS工艺设计的$8 × 8$微电极阵列组成。神经记录电路的模拟前端采用斩波技术,有效地降低了低频噪声。整个电路采用中芯国际180纳米CMOS工艺在Cadence进行了设计。仿真结果表明,通过带控制终端的电极可以独立记录频率为0 ~ 2khz、幅度为0 ~ 500 μ m{V}$的信号。电极阵列和记录模拟前端IC采用不同的金属层部分重叠,节省了芯片面积。64个电极的最终电路的芯片面积仅为1400 mu mathm {m}乘以760 mu mathm {m}$。
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引用次数: 0
A Fast-Transient Response Capacitor-Less FVF-LDO in 22-nm CMOS Technology 基于22纳米CMOS技术的快速瞬态响应无电容FVF-LDO
Pub Date : 2022-11-11 DOI: 10.1109/APCCAS55924.2022.10090387
Ruolin Zhou, Heng Liu, Wending Qi, Xian Tang, Songping Mai
This paper presents a capacitor-less low-dropout regulator(LDO) based on flipped voltage follower(FVF) structure to achieve fast-transient response and small voltage spikes with a high power-supply ripple rejection (PSRR) performance. This capacitor-less LDO, implemented in 22 nm CMOS technology, is designed for the Internet-of-Things(IoT) application. With a method of adaptive biasing, this LDO can reduce quiescent by tracking load variations and improve the load transient response by tracing the variation of output voltage. Experimental results show that the maximal overshoot and undershoot with adaptive biasing circuit are about 25.06 mV and 38.73 mV, respectively, at the load current toggling between 100 uA and 10 mA with edge time of 300 ns. At the same time, its PSRR can achieve about -60.7 dB at 100 kHz and -41.2 dB at 1 MHz with quiescent current of 11 uA.
提出了一种基于翻转电压从动器(FVF)结构的无电容低差稳压器(LDO),以实现快速瞬态响应和小电压尖峰,并具有良好的电源纹波抑制(PSRR)性能。该无电容LDO采用22纳米CMOS技术,专为物联网(IoT)应用而设计。该LDO采用自适应偏置方法,通过跟踪负载变化来减少静态,通过跟踪输出电压的变化来改善负载的瞬态响应。实验结果表明,当负载电流在100 uA ~ 10 mA之间切换,边缘时间为300 ns时,自适应偏置电路的最大过调值约为25.06 mV,最大欠调值约为38.73 mV。同时,在静态电流为11 uA时,其PSRR在100 kHz时可达到-60.7 dB,在1 MHz时可达到-41.2 dB。
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引用次数: 0
Design of Matrix Filter Using Discrete Cosine Transform and Path Graph 基于离散余弦变换和路径图的矩阵滤波器设计
Pub Date : 2022-11-11 DOI: 10.1109/APCCAS55924.2022.10090257
C. Tseng, Su-Ling Lee
In this paper, the design of matrix filter using discrete cosine transform (DCT) and path graph is presented. First, the DCT is used to design matrix filter without considering the prior information of transform basis of DCT. Then, the graph spectral theory is employed to show that the DCT is the graph Fourier transform (GFT) of path graph such that graph filter method can be used to design and implement the matrix filter. Next, the weighted least squares (WLS) method is applied to design the graph filters which can be used to implement the matrix filter with low computational complexity because graph shift matrix is very sparse. Finally, the design examples of matrix Butterworth filter and matrix Riesz fractional order differentiator (FOD) are illustrated to demonstrate the effectiveness of the proposed matrix filter design method.
本文提出了一种基于离散余弦变换和路径图的矩阵滤波器设计方法。首先,在不考虑DCT变换基先验信息的情况下,利用DCT设计矩阵滤波器;然后,利用图谱理论证明了DCT是路径图的图傅里叶变换(GFT),从而可以用图滤波方法设计和实现矩阵滤波器。其次,利用加权最小二乘(WLS)方法设计图滤波器,利用图移位矩阵的稀疏性实现低计算复杂度的矩阵滤波器。最后,通过矩阵Butterworth滤波器和矩阵Riesz分数阶微分器(FOD)的设计实例验证了所提出的矩阵滤波器设计方法的有效性。
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引用次数: 0
A 30.6-41.5uW 10-bit Column Parallel Single-Slope ADC with Minimum Voltage Feedback for CMOS Image Sensors 一种用于CMOS图像传感器的30.6-41.5uW 10位柱并联单斜率最小电压反馈ADC
Pub Date : 2022-11-11 DOI: 10.1109/APCCAS55924.2022.10090305
Zhoudeng Li, Xian Tang
A low power column parallel single-slope (SS) ADC with minimum voltage feedback (MVF) for CMOS image sensors is proposed. It utilizes a minimum voltage feedback approach and a dynamic bias structure to reduce the useless power consumption after the ramp signal passes the minimum voltage of a row. A 10-bit SS ADC with MVF was designed in a 180nm CMOS process. The simulated DNL and INL of the ADC are +0.124/-0.126 LSB and +0.1/-0.104 LSB, respectively. The SNDR is 61.29dB, the SFDR is 77.24dB and the ENOB is 9.89bit. The column power consumption of the ADC is 30.6-41.5uW at the frequency of 50 MHz and the power supply of 3.3V/1.8V. The column parallel comparator and the ramp generator using this technology in the ADC can reduce power consumption by up to 53.2% and 57.0%, respectively. The power consumption of the added MVF circuit is only 0.16uW/column.
提出了一种用于CMOS图像传感器的具有最小电压反馈(MVF)的低功率柱并联单斜率(SS) ADC。它利用最小电压反馈方法和动态偏置结构来减少斜坡信号通过行最小电压后的无用功耗。采用180nm CMOS工艺,设计了一个带MVF的10位SS ADC。ADC的模拟DNL和INL分别为+0.124/-0.126 LSB和+0.1/-0.104 LSB。SNDR为61.29dB, SFDR为77.24dB, ENOB为9.89bit。在频率为50 MHz,电源为3.3V/1.8V时,ADC的列功耗为30.6-41.5uW。在ADC中使用该技术的列并行比较器和斜坡发生器可以分别降低高达53.2%和57.0%的功耗。增加的MVF电路的功耗仅为0.16uW/列。
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引用次数: 0
A 60-GHz CMOS Balanced Power Amplifier with Miniaturized Quadrature Hybrids Achieving 19.0-dBm Output Power and 24.4% Peak PAE 一种具有小型化正交混合电路的60 ghz CMOS平衡功率放大器,输出功率为19.0 dbm,峰值PAE为24.4%
Pub Date : 2022-11-11 DOI: 10.1109/APCCAS55924.2022.10090372
Zhi-Li Zhang, Xi Wang, Yong Chen, Junyan Ren, Shunli Ma
In this paper, a 60-GHz CMOS balanced power amplifier (PA) is proposed. Two miniaturized quadrature hybrids are utilized to realize power splitting and power combining. The compact hybrids can achieve good input and output matching performances. Transistor-layout optimization is taken into consideration to boost the output power and improve the power-added efficiency (PAE). The balanced PA is designed in 65-nm bulk CMOS and all the electromagnetic (EM) simulations of passive devices are executed in the EM tool. Post-layout simulation results show that the proposed balanced PA realizes a small-signal gain of 29.1 dB at 60 GHz with an 11-GHz bandwidth. With a 1.2-V supply voltage and 300-mW power consumption, the balanced PA achieves a saturated output power of 19.0 dBm and 24.4% peak PAE at 60 GHz, which is suitable for 60-GHz wireless systems.
本文提出了一种60 ghz CMOS平衡功率放大器。采用两个小型化的正交混合电路实现功率分割和功率合并。紧凑混合动力系统具有良好的输入输出匹配性能。为了提高输出功率和增加功率效率(PAE),考虑了优化晶体管布局。该平衡放大器采用65nm块体CMOS设计,所有无源器件的电磁仿真都在电磁仿真工具中进行。布局后仿真结果表明,该均衡式放大器在11 GHz带宽下,在60 GHz频率下可实现29.1 dB的小信号增益。在1.2 v供电电压和300 mw功耗下,平衡放大器在60 GHz时的饱和输出功率为19.0 dBm,峰值PAE为24.4%,适用于60 GHz无线系统。
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引用次数: 0
A 22-nm FDSOI 8T SRAM Based Time-Domain CIM for Energy-Efficient DNN Accelerators 基于22nm FDSOI 8T SRAM的高效DNN加速器时域CIM
Pub Date : 2022-11-11 DOI: 10.1109/APCCAS55924.2022.10090315
Yongliang Zhou, Zuo Cheng, Han Liu, Tianzhu Xiong, Bo Wang
In memory computation for Deep neural networks (DNNs) applications is an attractive approach to improve the energy efficiency of MAC operations under a memory-wall constraint, since it is highly parallel and can save a great amount of computation and memory access power. In this paper, we propose a time-domain compute in memory (CIM) design based on Fully Depleted Silicon On Insulator (FD-SOI) 8T SRAM. A $128mathrm{x}128$ 8T SRAM bit-cell array is built for processing a vector-matrix multiplication (or parallel dot-products) with $8mathrm{x}$ binary (0 or 1) inputs, in-array 8-bits weights, and 8bits output precision for DNN applications. The column-wise TDC converts the delay accumulation results to 8bits output codes using replica bit-cells for each conversion. Monte-Carlo simulations have verified both linearity and process variation. The energy efficiency of the 8bits operation is 32.8TOPS/W at 8bits TDC mode using 0.9V supply and 20MHz.
在内存计算中,深度神经网络(Deep neural networks, dnn)由于其高度并行性,可以节省大量的计算和内存访问功率,是在内存墙约束下提高MAC操作能量效率的一种有吸引力的方法。本文提出了一种基于全耗尽绝缘体上硅(FD-SOI) 8T SRAM的时域内存计算(CIM)设计。$128mathrm{x}128$ 8T SRAM位单元阵列用于处理向量矩阵乘法(或并行点积),具有$8mathrm{x}$二进制(0或1)输入,数组内8位权重和DNN应用的8位输出精度。列式TDC将延迟累积结果转换为8位输出代码,每次转换使用复制位单元。蒙特卡罗模拟验证了线性和过程变化。在使用0.9V电源和20MHz的8bit TDC模式下,8bit操作的能量效率为32.8TOPS/W。
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引用次数: 1
An Accurate and Time-Efficient Subtractor by Cross Format Coding in Stochastic Computing 随机计算中一种精确、省时的交叉格式编码减法
Pub Date : 2022-11-11 DOI: 10.1109/APCCAS55924.2022.10090251
Zhihuai Zhang, Weiqian Zhang, S. Xiong, Yudi Zhao
Different from binary computation, stochastic computation (SC), as a new paradigm, uses stochastic bit stream (SBS) to encode data. By simplifying computing elements, the circuit area can be greatly reduced. SBS can be generated by a stochastic number generator (SNG) with a variety of formats. In this work, we use unipolar (UP) and bipolar (BP) formats to optimize the traditional SC subtractor, which is named the UP-to-BP Subtractor (UBS). A new cross format coding (CFC) method is proposed for stochastic computing, which combines the UP and BP format, and is applied to Sobel edge detection in image processing algorithms. The fault tolerance and detection efficacy of the proposed CFC method and conventional binary computing are compared in this paper. By using the CFC method, the detected F-Score is improved by 0.15(23%). If the F-score remains unchanged, the processing speed can be about 10 times faster.
与二进制计算不同,随机计算作为一种新的计算范式,采用随机比特流(SBS)对数据进行编码。通过简化计算元件,可以大大减小电路面积。SBS可以由具有多种格式的随机数字生成器(SNG)生成。在这项工作中,我们使用单极(UP)和双极(BP)格式来优化传统的SC减法器,该减法器被称为UP- BP减法器(UBS)。提出了一种结合UP和BP格式的随机计算交叉格式编码方法,并将其应用于图像处理算法中的Sobel边缘检测。本文比较了CFC方法与传统二进制计算方法的容错性和检测效率。采用CFC方法,检测到的F-Score提高了0.15(23%)。如果f分数不变,处理速度可以提高10倍左右。
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引用次数: 0
Logic Locking for Hardware Security Using Voltage-Gated Spin-orbit Torque Magnetic Tunnel Junction 基于电压门控自旋轨道转矩磁隧道结的硬件安全逻辑锁定
Pub Date : 2022-11-11 DOI: 10.1109/APCCAS55924.2022.10090297
Divyanshu Divyanshu, R. Kumar, Danial Khan, S. Amara, Y. Massoud
With the rapid interest in exploiting the advantages of beyond CMOS devices in various applications, we explore, in this work, voltage-gated spin-orbit torque-assisted magnetic tunnel junction (VGSOT-MTJ) based on the Verilog-A behavioral model to design a possible logic locking system for hardware security. The VGSOT MTJ can switch without needing a magnetic field, and the antiferromagnetic (AFM) strip provides SOT and an exchange bias, thus paving the way for more practical applications. Compared to spin transfer torque (STT) MTJs, these AFM-based SOT-MTJs do not require passing high write current through the thin layer of the MTJ stack, thus increasing their endurance significantly. Compared with Heavy metal (HM) based SOT-MTJ, the VGSOT-MTJ utilizes the voltage-controlled magnetic anisotropy (VCMA) effect to significantly reduce the $J_{mathbf{SOT},mathbf{critical}}$. We perform a Monte-Carlo analysis to account for the effect of Process Variation on critical MTJ parameters for designing the logic locking block. Eye Diagram test, transient performance, and the effect of thermal noise are analyzed for High-Speed Integrated Circuits systems, and the results are compared with HM-based SOT-assisted MTJ as both are three-terminal (3T) MTJ structures.
随着人们对利用CMOS器件在各种应用中的优势的快速兴趣,我们在这项工作中探索了基于Verilog-A行为模型的电压门控自旋轨道扭矩辅助磁隧道结(VGSOT-MTJ),以设计一种可能的硬件安全逻辑锁定系统。VGSOT MTJ可以在不需要磁场的情况下切换,反铁磁(AFM)带提供SOT和交换偏置,从而为更实际的应用铺平了道路。与自旋传递扭矩(STT) MTJ相比,这些基于afm的sot -MTJ不需要通过MTJ堆栈的薄层传递高写电流,从而显着提高了它们的耐用性。与基于重金属(HM)的SOT- mtj相比,VGSOT-MTJ利用压控磁各向异性(VCMA)效应显著降低了$J_{mathbf{SOT},mathbf{critical}}$。我们执行蒙特卡罗分析,以说明过程变化对设计逻辑锁定块的关键MTJ参数的影响。分析了高速集成电路系统的眼图测试、瞬态性能和热噪声的影响,并将结果与基于hm的三端(3T) MTJ结构进行了比较。
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引用次数: 1
IEEE APCCAS 2022
Pub Date : 2022-11-11 DOI: 10.1109/apccas55924.2022.10090265
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引用次数: 0
Subpixel Interpolation Disparity Refinement for Semi-Global Matching 半全局匹配的亚像素插值视差细化
Pub Date : 2022-11-11 DOI: 10.1109/APCCAS55924.2022.10090384
Yunhao Ma, Xiwei Fang, Pingcheng Dong, Xinyu Guan, Kebo Li, Lei Chen, F. An
Semi-Global Matching (SGM) algorithms and their corresponding hardware accelerators, which focus on stereo matching, have been developed in the last few years. However, the interpolation for disparity is much indispensable for real-world applications but still remains refining. This work presents a pixel-level pipeline architecture for the disparity refinement for SGM in case of computing disparity, which refines disparity through subpixel interpolation with an optimized cosine look up table and a compute-friendly parallel divider. The hardware architecture based on optimization algorithms has reached a error rate of only 6.33% for tradition background and 7.30% for occlusion condition, achieved in real-time FPGA as well.
半全局匹配(SGM)算法及其相应的硬件加速器是近年来发展起来的,主要研究方向是立体匹配。然而,视差插值在实际应用中是必不可少的,但仍有待完善。本文提出了一种用于计算视差的SGM视差细化的像素级管道架构,该架构通过优化的余弦查找表和计算友好的并行分配器通过亚像素插值来细化视差。基于优化算法的硬件架构在传统背景下的错误率仅为6.33%,在遮挡条件下的错误率仅为7.30%,在实时FPGA上也实现了错误率。
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引用次数: 0
期刊
2022 IEEE Asia Pacific Conference on Circuits and Systems (APCCAS)
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