Pub Date : 2009-06-25DOI: 10.1109/IWASI.2009.5184774
K. Makinwa
Smart sensors are systems in which sensors and dedicated interface electronics are integrated on the same chip, or at least in the same package. Due to the low-level analog output of typical sensors, designing interface electronics that “does no harm,” i.e. does not impair sensor performance, is quite challenging, especially in today's mainstream CMOS technology, whose inherent precision is limited by 1/f noise and component mismatch. However, since most sensors are quite slow compared to transistors, dynamic techniques can often be used to trade speed or bandwidth for higher precision. Examples of such techniques are auto zeroing, chopping, dynamic element matching, switched-capacitor filtering and sigma-delta modulation. This paper describes the use of such dynamic techniques in the design and realization of state-of-the-art smart CMOS temperature sensors.
{"title":"Smart CMOS temperature sensors","authors":"K. Makinwa","doi":"10.1109/IWASI.2009.5184774","DOIUrl":"https://doi.org/10.1109/IWASI.2009.5184774","url":null,"abstract":"Smart sensors are systems in which sensors and dedicated interface electronics are integrated on the same chip, or at least in the same package. Due to the low-level analog output of typical sensors, designing interface electronics that “does no harm,” i.e. does not impair sensor performance, is quite challenging, especially in today's mainstream CMOS technology, whose inherent precision is limited by 1/f noise and component mismatch. However, since most sensors are quite slow compared to transistors, dynamic techniques can often be used to trade speed or bandwidth for higher precision. Examples of such techniques are auto zeroing, chopping, dynamic element matching, switched-capacitor filtering and sigma-delta modulation. This paper describes the use of such dynamic techniques in the design and realization of state-of-the-art smart CMOS temperature sensors.","PeriodicalId":246540,"journal":{"name":"2009 3rd International Workshop on Advances in sensors and Interfaces","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-06-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129470073","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-06-25DOI: 10.1109/IWASI.2009.5184799
M. D. Angione, A. Mallardi, G. Romanazzi, G. Suranna, P. Mastrorilli, D. Cafagna, E. De Giglio, G. Palazzo, L. Torsi
A novel bottom-gate top-contact OTFT architecture has been fabricated. In this device, a lipid bilayer structure embedding a photosynthetic membrane protein extracted from Rhodobacter Sphaeroides has been deposited onto the organic semiconductor film (α,ω-dihexylsexythiophene) prior to the evaporation of source and drain gold contacts. The figures of merit of this device were extracted and compared to those obtained for the same OTFT devoid of the biological film. Only slightly lower performances in terms of field-effect mobility (µ) were observed for the lipid bilayer OTFT that exhibits µ=0.007 cm2/Vs. This result constitutes a preliminary important starting point towards the development of novel highly sensitive and selective herbicides sensors.
{"title":"Membrane proteins embedded in supported lipid bilayers employed in field effect electronic devices","authors":"M. D. Angione, A. Mallardi, G. Romanazzi, G. Suranna, P. Mastrorilli, D. Cafagna, E. De Giglio, G. Palazzo, L. Torsi","doi":"10.1109/IWASI.2009.5184799","DOIUrl":"https://doi.org/10.1109/IWASI.2009.5184799","url":null,"abstract":"A novel bottom-gate top-contact OTFT architecture has been fabricated. In this device, a lipid bilayer structure embedding a photosynthetic membrane protein extracted from Rhodobacter Sphaeroides has been deposited onto the organic semiconductor film (α,ω-dihexylsexythiophene) prior to the evaporation of source and drain gold contacts. The figures of merit of this device were extracted and compared to those obtained for the same OTFT devoid of the biological film. Only slightly lower performances in terms of field-effect mobility (µ) were observed for the lipid bilayer OTFT that exhibits µ=0.007 cm2/Vs. This result constitutes a preliminary important starting point towards the development of novel highly sensitive and selective herbicides sensors.","PeriodicalId":246540,"journal":{"name":"2009 3rd International Workshop on Advances in sensors and Interfaces","volume":"72 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-06-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114715926","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-06-25DOI: 10.1109/IWASI.2009.5184792
A. Fort, M. Innocenti, M. Foresti, M. Mugnaini, I. Pasquini, L. Pigani, S. Rocchi, V. Vignoli
In this paper the authors describe the development and the characterization of a Quartz Crystal Microbalance (QCM) sensor for NO2 detection with the sensitive layer made of a thin films of poly (3,4-ethylenedioxythiophene) (PEDOT). The PEDOT layer was obtained by electropolymerization on one of the gold electrodes of a 10 MHz AT-cut commercial quartz crystal. The sensor performance in terms of sensitivity and selectivity were assessed exploiting an ad hoc chemical sampling unit, and a low noise conditioning and processing electronic system. This latter consists of an oscillator hosting the piezoelectric resonator, and of a frequency measurement system granting a (short time) relative accuracy of approximately 10−8, which ensures a mass resolution in the order of the ng. The preliminary obtained results show a NO2 resolution and sensitivity of the order of 1 ppm, and 2.6 Hz/ppm, respectively, at 35 °C constant room temperature and in a dry environment, and show that a satisfactory repeatability can be achieved with recovery cycles in N2 at room temperature.
{"title":"NO2 QCM gas sensor based on electrochemical deposition of PEDOT","authors":"A. Fort, M. Innocenti, M. Foresti, M. Mugnaini, I. Pasquini, L. Pigani, S. Rocchi, V. Vignoli","doi":"10.1109/IWASI.2009.5184792","DOIUrl":"https://doi.org/10.1109/IWASI.2009.5184792","url":null,"abstract":"In this paper the authors describe the development and the characterization of a Quartz Crystal Microbalance (QCM) sensor for NO2 detection with the sensitive layer made of a thin films of poly (3,4-ethylenedioxythiophene) (PEDOT). The PEDOT layer was obtained by electropolymerization on one of the gold electrodes of a 10 MHz AT-cut commercial quartz crystal. The sensor performance in terms of sensitivity and selectivity were assessed exploiting an ad hoc chemical sampling unit, and a low noise conditioning and processing electronic system. This latter consists of an oscillator hosting the piezoelectric resonator, and of a frequency measurement system granting a (short time) relative accuracy of approximately 10−8, which ensures a mass resolution in the order of the ng. The preliminary obtained results show a NO2 resolution and sensitivity of the order of 1 ppm, and 2.6 Hz/ppm, respectively, at 35 °C constant room temperature and in a dry environment, and show that a satisfactory repeatability can be achieved with recovery cycles in N2 at room temperature.","PeriodicalId":246540,"journal":{"name":"2009 3rd International Workshop on Advances in sensors and Interfaces","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-06-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130056783","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-06-25DOI: 10.1109/IWASI.2009.5184763
A. Nascetti, G. de Cesare, D. Caputo
A technological approach for the fabrication of large area hybrid detectors is presented. The proposed hybrid detector consists in an array of hydrogenated amorphous silicon photodiodes directly connected to a CMOS readout chip, which is vertically integrated over the sensor array using flip-chip bonding. In particular, the proposed solution relies on a stack of interconnection layers, deposited on top of the photodiode array, to route each individual pixel output to a separate pre-amplifier channel. This avoids the need for a geometrical matching between the sensor array and the chip contact pads. As a consequence, conventiona non-pixelated readout chip can be used and easy-scalable large area detectors can be produced. Furthermore the sensor array and the readout chip can be optimized independently leading to additional advantages as fast readout, implementation of in-pixel signal conditioning and pre-processing and superior noise performances. Experimental results validating all the technological steps involved in the fabrication of the hybrid detector are reported in detail.
{"title":"Large area hybrid detector technology based on amorphous silicon photosensors","authors":"A. Nascetti, G. de Cesare, D. Caputo","doi":"10.1109/IWASI.2009.5184763","DOIUrl":"https://doi.org/10.1109/IWASI.2009.5184763","url":null,"abstract":"A technological approach for the fabrication of large area hybrid detectors is presented. The proposed hybrid detector consists in an array of hydrogenated amorphous silicon photodiodes directly connected to a CMOS readout chip, which is vertically integrated over the sensor array using flip-chip bonding. In particular, the proposed solution relies on a stack of interconnection layers, deposited on top of the photodiode array, to route each individual pixel output to a separate pre-amplifier channel. This avoids the need for a geometrical matching between the sensor array and the chip contact pads. As a consequence, conventiona non-pixelated readout chip can be used and easy-scalable large area detectors can be produced. Furthermore the sensor array and the readout chip can be optimized independently leading to additional advantages as fast readout, implementation of in-pixel signal conditioning and pre-processing and superior noise performances. Experimental results validating all the technological steps involved in the fabrication of the hybrid detector are reported in detail.","PeriodicalId":246540,"journal":{"name":"2009 3rd International Workshop on Advances in sensors and Interfaces","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-06-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133733796","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-06-25DOI: 10.1109/IWASI.2009.5184779
Jiawei Xu, G. Meynants, P. Merken
This paper presents a fully integrated lock-in amplifier intended for nanowire gas sensing. The nanowire will change its conductivity according to the concentration of an absorbing gas. To ensure accurate nanowire impedance measurement, the lock-in technique is implemented to attenuate the low frequency noise and offset by synchronous demodulation or phase-sensitive detection (PSD). Dual-channel lock-in amplifier also provides both resistive and capacitive information of the nanowire in separate channels. Measurement results of the resistors and capacitors show 2% resolution over 10 KΩ – 40 KΩ resistance and 3% resolution over 0.5 nF–1.8 nF capacitance. Moreover, a palladium nanowire sensor was placed in a sealed chamber filled with 10% hydrogen in nitrogen, a 28.7 KΩ to 32.1 KΩ impedance variation was measured through the lock-in amplifier by slowly decreasing the hydrogen concentration. The chip has been implemented with UMC 0.18µm CMOS technology and occupies an area of 2 mm2. The power consumption of the readout circuit is 2 mW from a 1.8V supply.
{"title":"Low-power lock-in amplifier for complex impedance measurement","authors":"Jiawei Xu, G. Meynants, P. Merken","doi":"10.1109/IWASI.2009.5184779","DOIUrl":"https://doi.org/10.1109/IWASI.2009.5184779","url":null,"abstract":"This paper presents a fully integrated lock-in amplifier intended for nanowire gas sensing. The nanowire will change its conductivity according to the concentration of an absorbing gas. To ensure accurate nanowire impedance measurement, the lock-in technique is implemented to attenuate the low frequency noise and offset by synchronous demodulation or phase-sensitive detection (PSD). Dual-channel lock-in amplifier also provides both resistive and capacitive information of the nanowire in separate channels. Measurement results of the resistors and capacitors show 2% resolution over 10 KΩ – 40 KΩ resistance and 3% resolution over 0.5 nF–1.8 nF capacitance. Moreover, a palladium nanowire sensor was placed in a sealed chamber filled with 10% hydrogen in nitrogen, a 28.7 KΩ to 32.1 KΩ impedance variation was measured through the lock-in amplifier by slowly decreasing the hydrogen concentration. The chip has been implemented with UMC 0.18µm CMOS technology and occupies an area of 2 mm2. The power consumption of the readout circuit is 2 mW from a 1.8V supply.","PeriodicalId":246540,"journal":{"name":"2009 3rd International Workshop on Advances in sensors and Interfaces","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-06-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126730316","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-06-25DOI: 10.1109/IWASI.2009.5184788
M. Crescentini, M. Rossi, M. Bennati, F. Thei, A. Baschirotto, M. Tartagni
An emerging area of biosensors is based on the use of structures provided by recent advances of Nanotechnology such as nanowires, nanotubes and nanopores. Among them, the integration of natural nanopores such as ion channels with electronics is a promising approach to develop rapid, sensitive and reliable biosensors able to detect low concentration of target molecules or DNA sequencing. This paper presents a compact and low-cost system able to readout, process and record current in the pA range, provided by biological or synthetic nanopores. The approach is based on the idea that by processing the outputs of a large amount of single-molecule nanosensors would result in a significant increase of resolution and signal-to-noise ratio. The approach consists of an electronic interface able to detect current-based array of nanosensors, where the management of very large amount of data is critical for the readout process. As working example, we acquired the single molecule signals derived from non-covalent bindings between single a-hemolysin pores, embedded into an artificial lipid bilayer, and β-cyclodextrin molecules. The system embeds the electronic readout with the microfluidic where is placed the nanosensor array. The electronic interface is a 0.5mm2 current amplifier based on an array of ΣΔ converters. Then the high rate data streams are processed and downsampled by a DSP that communicates with a PC via a USB interface for data processing and storage.
{"title":"A nanosensor interface based on delta-sigma Arrays","authors":"M. Crescentini, M. Rossi, M. Bennati, F. Thei, A. Baschirotto, M. Tartagni","doi":"10.1109/IWASI.2009.5184788","DOIUrl":"https://doi.org/10.1109/IWASI.2009.5184788","url":null,"abstract":"An emerging area of biosensors is based on the use of structures provided by recent advances of Nanotechnology such as nanowires, nanotubes and nanopores. Among them, the integration of natural nanopores such as ion channels with electronics is a promising approach to develop rapid, sensitive and reliable biosensors able to detect low concentration of target molecules or DNA sequencing. This paper presents a compact and low-cost system able to readout, process and record current in the pA range, provided by biological or synthetic nanopores. The approach is based on the idea that by processing the outputs of a large amount of single-molecule nanosensors would result in a significant increase of resolution and signal-to-noise ratio. The approach consists of an electronic interface able to detect current-based array of nanosensors, where the management of very large amount of data is critical for the readout process. As working example, we acquired the single molecule signals derived from non-covalent bindings between single a-hemolysin pores, embedded into an artificial lipid bilayer, and β-cyclodextrin molecules. The system embeds the electronic readout with the microfluidic where is placed the nanosensor array. The electronic interface is a 0.5mm2 current amplifier based on an array of ΣΔ converters. Then the high rate data streams are processed and downsampled by a DSP that communicates with a PC via a USB interface for data processing and storage.","PeriodicalId":246540,"journal":{"name":"2009 3rd International Workshop on Advances in sensors and Interfaces","volume":"53 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-06-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116005321","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-06-25DOI: 10.1109/IWASI.2009.5184782
F. Docchio, L. Fumagalli, P. Tomassini, M. Zanatta, G. Sansoni
The need to prevent train accidents inside railway tunnels has motivated the national railway Company Ferrovie dello Stato to launch a project aimed at installing a number of train monitoring portals at a suitable distance from the tunnel entrances. The first experimental portal, and a second operative one, have been installed by SIRTI S.p.A., respectively in Rastignano and Formia. Our company, in collaboration with the Laboratory of Optoelectronics of the University of Brescia, have been requested to develop all the multisensor architecture for the dimensional and thermal monitoring of the trains to be installed on the portals. One of the key elements of the portal is the shape acquisition sensor, based on scanning telemetry. In the second portal, based on the experience gathered from the first one, a novel shape acquisition system based on time-of-flight telemeters has been developed. This telemeter has been specifically designed for the high-speed, high-resolution monitoring of trains in railway portals, but can be adapted to a number of industrial and environmental applications.
为了防止铁路隧道内发生火车事故，促使国家铁路公司Ferrovie dello Stato启动了一个项目，目的是在距离隧道入口适当的距离上安装一些火车监测门户。第一个实验入口和第二个操作入口分别由SIRTI S.p.A在拉斯蒂尼亚诺和福尔米亚安装。我们公司与布雷西亚大学光电实验室合作，被要求开发安装在门户上的列车尺寸和热监测的所有多传感器架构。入口的关键要素之一是基于扫描遥测的形状采集传感器。在第二门户中，基于第一个门户收集的经验，开发了一种基于飞行时间遥测的新型形状采集系统。该遥测仪专为铁路门户的高速，高分辨率列车监测而设计，但可以适应许多工业和环境应用。
{"title":"Advanced laser telemetry for vehicle monitoring and other industrial applications","authors":"F. Docchio, L. Fumagalli, P. Tomassini, M. Zanatta, G. Sansoni","doi":"10.1109/IWASI.2009.5184782","DOIUrl":"https://doi.org/10.1109/IWASI.2009.5184782","url":null,"abstract":"The need to prevent train accidents inside railway tunnels has motivated the national railway Company Ferrovie dello Stato to launch a project aimed at installing a number of train monitoring portals at a suitable distance from the tunnel entrances. The first experimental portal, and a second operative one, have been installed by SIRTI S.p.A., respectively in Rastignano and Formia. Our company, in collaboration with the Laboratory of Optoelectronics of the University of Brescia, have been requested to develop all the multisensor architecture for the dimensional and thermal monitoring of the trains to be installed on the portals. One of the key elements of the portal is the shape acquisition sensor, based on scanning telemetry. In the second portal, based on the experience gathered from the first one, a novel shape acquisition system based on time-of-flight telemeters has been developed. This telemeter has been specifically designed for the high-speed, high-resolution monitoring of trains in railway portals, but can be adapted to a number of industrial and environmental applications.","PeriodicalId":246540,"journal":{"name":"2009 3rd International Workshop on Advances in sensors and Interfaces","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-06-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129452662","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-06-25DOI: 10.1109/IWASI.2009.5184758
U. Frey
Microfabrication techniques and, in particular, CMOS technology are very powerful tools to devise bioelectronic and multielectrode microsystems. CMOS-based, fully integrated microelectrode arrays for bidirectional communication (stimulation and recording) with electrogenic cells are presented. These complex microsystems with integrated filter and amplification stages feature a high electrode density (3'150 electrodes per mm2) as well as low noise levels (3–7 µVrms) in the recorded signals and are capable of monitoring relevant electrophysiological responses of cells to electrical stimuli or to pharmacological agents with prospective applications in the fields of neuroscience or pharmascreening. Results from two exemplary applications are shown. In the first one, the system was used to record the electrical activity of cardiomyocytes. To modulate their electrogenic properties lentivirus-derived particles were selected to regulate the bone morphogenetic protein-2 gene expression. This provides a tool for gene-function studies and for the discovery and preclinical evaluation of novel genes with potential therapeutic effects. In the second application acute sagittal cerebellar slices have been used to assess the performance of the device and to demonstrate its potential for application in the field of neuroscience. Subcellular resolution could be demonstrated and spike sorting allowed for analysing the measured action potentials from single neurons.
{"title":"High-density microelectrode array in CMOS technology applied to acute brain slice recordings and to gene-function studies","authors":"U. Frey","doi":"10.1109/IWASI.2009.5184758","DOIUrl":"https://doi.org/10.1109/IWASI.2009.5184758","url":null,"abstract":"Microfabrication techniques and, in particular, CMOS technology are very powerful tools to devise bioelectronic and multielectrode microsystems. CMOS-based, fully integrated microelectrode arrays for bidirectional communication (stimulation and recording) with electrogenic cells are presented. These complex microsystems with integrated filter and amplification stages feature a high electrode density (3'150 electrodes per mm2) as well as low noise levels (3–7 µVrms) in the recorded signals and are capable of monitoring relevant electrophysiological responses of cells to electrical stimuli or to pharmacological agents with prospective applications in the fields of neuroscience or pharmascreening. Results from two exemplary applications are shown. In the first one, the system was used to record the electrical activity of cardiomyocytes. To modulate their electrogenic properties lentivirus-derived particles were selected to regulate the bone morphogenetic protein-2 gene expression. This provides a tool for gene-function studies and for the discovery and preclinical evaluation of novel genes with potential therapeutic effects. In the second application acute sagittal cerebellar slices have been used to assess the performance of the device and to demonstrate its potential for application in the field of neuroscience. Subcellular resolution could be demonstrated and spike sorting allowed for analysing the measured action potentials from single neurons.","PeriodicalId":246540,"journal":{"name":"2009 3rd International Workshop on Advances in sensors and Interfaces","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-06-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130546173","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-06-25DOI: 10.1109/IWASI.2009.5184760
D. Caputo, G. de Cesare, A. Nascetti, R. Scipinotti
In this work we present an amorphous silicon/amorphous silicon carbide balanced photodiode structure suitable for differential photocurrent measurements in the ultraviolet (UV) and visible range. The device is a three-terminal structure constituted by two series-connected amorphous silicon p-i-n photodiodes. The structure takes advantage of the differential measurement to reveal very small variations of photocurrent in a large background current signal. Application of the device in detection of biomolecules based on the use of photosensors, can allow the increase of both the dynamic range and the sensitivity of the measurement.
{"title":"Amorphous silicon balanced photodiode for application in biomolecular analysis","authors":"D. Caputo, G. de Cesare, A. Nascetti, R. Scipinotti","doi":"10.1109/IWASI.2009.5184760","DOIUrl":"https://doi.org/10.1109/IWASI.2009.5184760","url":null,"abstract":"In this work we present an amorphous silicon/amorphous silicon carbide balanced photodiode structure suitable for differential photocurrent measurements in the ultraviolet (UV) and visible range. The device is a three-terminal structure constituted by two series-connected amorphous silicon p-i-n photodiodes. The structure takes advantage of the differential measurement to reveal very small variations of photocurrent in a large background current signal. Application of the device in detection of biomolecules based on the use of photosensors, can allow the increase of both the dynamic range and the sensitivity of the measurement.","PeriodicalId":246540,"journal":{"name":"2009 3rd International Workshop on Advances in sensors and Interfaces","volume":"70 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-06-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129990142","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-06-25DOI: 10.1109/IWASI.2009.5184790
T. Noulis, S. Siskos, G. Sarrabayrouse, L. Bary
Alternative current mode charge sensitive amplifier (CSA) topology and related methodology for use as pre-amplification block in radiation detection read out front end IC systems is proposed. It is based on the use of a suitably configured current conveyor architecture providing advantageous noise performance characteristics in comparison to the traditionally used CSA structures. In the proposed architecture the noise at the output of the CSA is independent of the detector capacitance value, allowing the use of large area detectors without affecting the system noise performance. Theoretical analysis and simulation based results are performed concerning the operation - performance of the proposed topology. Measurement results on a current mode CSA prototype fabricated with a 0.35 µm CMOS process by Austriamicrosystems are provided supporting the theoretical and simulation results and confirming the advantageous performance in relation to the traditional voltage mode structures mainly in terms of the noise performance dependency on the detector capacitance value.
{"title":"Current mode charge sensitive amplifying technique providing noise performance independent of the radiation detector capacitance","authors":"T. Noulis, S. Siskos, G. Sarrabayrouse, L. Bary","doi":"10.1109/IWASI.2009.5184790","DOIUrl":"https://doi.org/10.1109/IWASI.2009.5184790","url":null,"abstract":"Alternative current mode charge sensitive amplifier (CSA) topology and related methodology for use as pre-amplification block in radiation detection read out front end IC systems is proposed. It is based on the use of a suitably configured current conveyor architecture providing advantageous noise performance characteristics in comparison to the traditionally used CSA structures. In the proposed architecture the noise at the output of the CSA is independent of the detector capacitance value, allowing the use of large area detectors without affecting the system noise performance. Theoretical analysis and simulation based results are performed concerning the operation - performance of the proposed topology. Measurement results on a current mode CSA prototype fabricated with a 0.35 µm CMOS process by Austriamicrosystems are provided supporting the theoretical and simulation results and confirming the advantageous performance in relation to the traditional voltage mode structures mainly in terms of the noise performance dependency on the detector capacitance value.","PeriodicalId":246540,"journal":{"name":"2009 3rd International Workshop on Advances in sensors and Interfaces","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-06-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133872601","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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