Pub Date : 1987-08-10DOI: 10.1109/CORNEL.1987.721230
M. Khatibzadeh, R. Trew
In recent years, the rapid growth of the Monolithic Microwave Integrated Circuits (MMICs) market has spurred considerable interest in large-signal modeling of GaAs MESFETs. An accurate Computer Aided Design (CAD) tool for the GaAs MESFET is important to the economic viability of MMIC technology. The design of microwave circuits for small-signal applications has substantially benefited from linear characterization techniques such as S-parameters. It is difficult, however, to apply this methodology to the design of microwave circuits for high-power applications in which nonlinear effects are dominant. There are three empirical techniques presently used in the characterization of power FETs: 1) the load pull method[ll, 2) "large-signal S-parameter" measurement[2], and 3 ) characterization by means of small signal S-parameters measured at different bias voltages [ 3 ] . These empirical methods, however, require that the device be fabricated prior to large signal characterization. Therefore, unless a systematic, controlled experiment on several devices is performed, little information can be gained from these techniques about the relation between large signal performance and device parameters.
{"title":"Sensitivity Of The RF Performance Of GaAs Power FETs To Process-dependent Parameters","authors":"M. Khatibzadeh, R. Trew","doi":"10.1109/CORNEL.1987.721230","DOIUrl":"https://doi.org/10.1109/CORNEL.1987.721230","url":null,"abstract":"In recent years, the rapid growth of the Monolithic Microwave Integrated Circuits (MMICs) market has spurred considerable interest in large-signal modeling of GaAs MESFETs. An accurate Computer Aided Design (CAD) tool for the GaAs MESFET is important to the economic viability of MMIC technology. The design of microwave circuits for small-signal applications has substantially benefited from linear characterization techniques such as S-parameters. It is difficult, however, to apply this methodology to the design of microwave circuits for high-power applications in which nonlinear effects are dominant. There are three empirical techniques presently used in the characterization of power FETs: 1) the load pull method[ll, 2) \"large-signal S-parameter\" measurement[2], and 3 ) characterization by means of small signal S-parameters measured at different bias voltages [ 3 ] . These empirical methods, however, require that the device be fabricated prior to large signal characterization. Therefore, unless a systematic, controlled experiment on several devices is performed, little information can be gained from these techniques about the relation between large signal performance and device parameters.","PeriodicalId":247498,"journal":{"name":"IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, 1987. Proceedings.","volume":"44 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1987-08-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133437709","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1987-08-10DOI: 10.1109/CORNEL.1987.721251
P.M. Mock, R. Trew, R. Neece
INTRODUCTION Large signal computer simulations of GaAs IMPATT diodes are in good agreement with experimental results1y2. IMPATT simulations, therefore, are useful in comparing different diode designs. The IMPATT diodes can be designed to obtain the highest dc to RF conversion efficiency or maximum RF power at a given frequency or a specific frequency band. This study presents the results of a design investigation conducted on 30 GHz GaRs IMPATT diodes. The purpose of the investigation was to determine the effect that variations in design parameters have upon the operation of these diodes. The device designs considered in this study consist of a single drift flat profile, a single drift ‘hi-lo’ profile, a double drift flat profile, and a double drift hybrid profile. The hybrid profile consists of a flat profile p region and a ‘lo-hi-lo’ profile n region. The device doping profiles considered in this study are shown in Figure 1 and the corresponding physical parameters are listed in Table 1. The device simulation used in this study is a device-physics based numerical simulation of the large signal operation of IMPATT diodes2. The model requires as input data device geometry, doping densities, material transport and breakdown data, bias conditions and RF signal information. It returns data such as RF power density, conversion efficiency and harmonic information.
{"title":"Sensitivity Of GaAs Impatt Diodes To Variations In Design Parameters","authors":"P.M. Mock, R. Trew, R. Neece","doi":"10.1109/CORNEL.1987.721251","DOIUrl":"https://doi.org/10.1109/CORNEL.1987.721251","url":null,"abstract":"INTRODUCTION Large signal computer simulations of GaAs IMPATT diodes are in good agreement with experimental results1y2. IMPATT simulations, therefore, are useful in comparing different diode designs. The IMPATT diodes can be designed to obtain the highest dc to RF conversion efficiency or maximum RF power at a given frequency or a specific frequency band. This study presents the results of a design investigation conducted on 30 GHz GaRs IMPATT diodes. The purpose of the investigation was to determine the effect that variations in design parameters have upon the operation of these diodes. The device designs considered in this study consist of a single drift flat profile, a single drift ‘hi-lo’ profile, a double drift flat profile, and a double drift hybrid profile. The hybrid profile consists of a flat profile p region and a ‘lo-hi-lo’ profile n region. The device doping profiles considered in this study are shown in Figure 1 and the corresponding physical parameters are listed in Table 1. The device simulation used in this study is a device-physics based numerical simulation of the large signal operation of IMPATT diodes2. The model requires as input data device geometry, doping densities, material transport and breakdown data, bias conditions and RF signal information. It returns data such as RF power density, conversion efficiency and harmonic information.","PeriodicalId":247498,"journal":{"name":"IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, 1987. Proceedings.","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1987-08-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115358370","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1987-08-10DOI: 10.1109/CORNEL.1987.721227
Utkarsh Mishra, R.S. Beaubien, M. Delaney, A. Brown, L. H. Hackett
{"title":"Low Noise 0.1-/spl mu/m GaAs MESFETs by MBE","authors":"Utkarsh Mishra, R.S. Beaubien, M. Delaney, A. Brown, L. H. Hackett","doi":"10.1109/CORNEL.1987.721227","DOIUrl":"https://doi.org/10.1109/CORNEL.1987.721227","url":null,"abstract":"","PeriodicalId":247498,"journal":{"name":"IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, 1987. Proceedings.","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1987-08-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123773610","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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