Pub Date : 1987-08-10DOI: 10.1109/CORNEL.1987.721223
R. Kiehl, S. Wright, J. Magerlein, D. Frank
Low gate leakage and proper nand p-channel FET thresholds are essential for achieving high performance complementary heterostructure FET (C-HFET) circuits El]. MESFETs and MODFETs have limited potential for C-HFET circuits due to the large leakage currents characteristic of Schottky-gate designs. While insulator-gate HFETs, such as MISFETs and SISFETs, exhibit substantially lower gate leakage at cryogenic temperatures, the leakage of these devices is still too large for room temperature C-HFET operation. Furthermore, the FET thresholds of conventional MISFET and SJSFET devices are fixed at non-optimal values.
{"title":"Ion-Implanted Self-Aligned-Gate Quantum-well Heterostructure FETs","authors":"R. Kiehl, S. Wright, J. Magerlein, D. Frank","doi":"10.1109/CORNEL.1987.721223","DOIUrl":"https://doi.org/10.1109/CORNEL.1987.721223","url":null,"abstract":"Low gate leakage and proper nand p-channel FET thresholds are essential for achieving high performance complementary heterostructure FET (C-HFET) circuits El]. MESFETs and MODFETs have limited potential for C-HFET circuits due to the large leakage currents characteristic of Schottky-gate designs. While insulator-gate HFETs, such as MISFETs and SISFETs, exhibit substantially lower gate leakage at cryogenic temperatures, the leakage of these devices is still too large for room temperature C-HFET operation. Furthermore, the FET thresholds of conventional MISFET and SJSFET devices are fixed at non-optimal values.","PeriodicalId":247498,"journal":{"name":"IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, 1987. Proceedings.","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1987-08-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133782394","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1987-08-10DOI: 10.1109/CORNEL.1987.721229
R. Trew
topology is determined by physical arguments and two-port characterization techniques. Mathematical functions are determined by physical device modeling or curve fitting to experimental data. The functions can then be analyzed to define a topology. In this manner, for example, it can be shown that the input circuit of an FET can be represented as a series RC circuit and the output network can be represented as a parallel RC circuit. The element values and their relationship to device parameters can be determined by analytic device modeling of the physical structure and the mechanisms responsible for device operation. Once the circuit topology is known the element values can also be extracted from experimental data taken from actual devices over a specified frequency band. The equivalent circuit is generally valid only over the frequency band for which the circuit has been determined. Attempts to extrapolate the response of the circuit beyond the characterized frequency band can produce misleading results, especially for circuits that have been simplified for convenience by removing certain elements. If an equivalent circuit is to be used to predict the upper frequency potential of devices (e.g., to determine ft or fmax) the equivalent circuit must be topologically accurate and based upon device physics. Elements representing the physical processes responsible for device operation must be present. The high frequency operation of four candidate transistors for mm-wave applications is compared in this paper. Physically based equivalent circuits are determined and used to predict high frequency potential. The element values are determined by extraction from measured dc and s-parameter data. The circuits are analyzed to determine the elements that limit high frequency operation. The four transistors investigated are listed in Table I and consist of a Hughes GaAs MESFET, the MIT Lincoln Labs PBT, a TRW AlGaAs/GaAs HEMT, and an Alpha AlGaAs/InGaAs/GaAs pseudomorphic HEMT.
{"title":"Equivalent Circuits For High Frequency Transistors","authors":"R. Trew","doi":"10.1109/CORNEL.1987.721229","DOIUrl":"https://doi.org/10.1109/CORNEL.1987.721229","url":null,"abstract":"topology is determined by physical arguments and two-port characterization techniques. Mathematical functions are determined by physical device modeling or curve fitting to experimental data. The functions can then be analyzed to define a topology. In this manner, for example, it can be shown that the input circuit of an FET can be represented as a series RC circuit and the output network can be represented as a parallel RC circuit. The element values and their relationship to device parameters can be determined by analytic device modeling of the physical structure and the mechanisms responsible for device operation. Once the circuit topology is known the element values can also be extracted from experimental data taken from actual devices over a specified frequency band. The equivalent circuit is generally valid only over the frequency band for which the circuit has been determined. Attempts to extrapolate the response of the circuit beyond the characterized frequency band can produce misleading results, especially for circuits that have been simplified for convenience by removing certain elements. If an equivalent circuit is to be used to predict the upper frequency potential of devices (e.g., to determine ft or fmax) the equivalent circuit must be topologically accurate and based upon device physics. Elements representing the physical processes responsible for device operation must be present. The high frequency operation of four candidate transistors for mm-wave applications is compared in this paper. Physically based equivalent circuits are determined and used to predict high frequency potential. The element values are determined by extraction from measured dc and s-parameter data. The circuits are analyzed to determine the elements that limit high frequency operation. The four transistors investigated are listed in Table I and consist of a Hughes GaAs MESFET, the MIT Lincoln Labs PBT, a TRW AlGaAs/GaAs HEMT, and an Alpha AlGaAs/InGaAs/GaAs pseudomorphic HEMT.","PeriodicalId":247498,"journal":{"name":"IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, 1987. Proceedings.","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1987-08-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116118650","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1987-08-10DOI: 10.1109/CORNEL.1987.721221
H. Baratte, D. La Tulipe, D. Frank, P. Solomon, T. Jackson, S. Wright
As-grown (enhancement-mode) and implanted (depletion-mode) GaAs SISFETs are fabricated in selective areas of the same chip with a self-aligned refractory gate process. Both types of devices have comparable characteristics (transconductances of 350mS/mm at 300K and 380mS/mm at 77K, maximum drain current of 350mA/mm at 300K and 400mA/mm at 77K for 0.8/spl mu/m gate lengths) and low gate leakage. A drift mobility of 20,000 cm/sup 2/V/sup -1s-1/ is measured at 77K for the implanted GaAs SISFETs while 150,000 cm/sup 2/V/sup -1s-1/ is measured for the as-grown heterostructures. Small circuits, fabricated with these enhance-deplete GaAs SISFETs, are de- scribed.
{"title":"Enhance / Deplete GaAs SISFETs","authors":"H. Baratte, D. La Tulipe, D. Frank, P. Solomon, T. Jackson, S. Wright","doi":"10.1109/CORNEL.1987.721221","DOIUrl":"https://doi.org/10.1109/CORNEL.1987.721221","url":null,"abstract":"As-grown (enhancement-mode) and implanted (depletion-mode) GaAs SISFETs are fabricated in selective areas of the same chip with a self-aligned refractory gate process. Both types of devices have comparable characteristics (transconductances of 350mS/mm at 300K and 380mS/mm at 77K, maximum drain current of 350mA/mm at 300K and 400mA/mm at 77K for 0.8/spl mu/m gate lengths) and low gate leakage. A drift mobility of 20,000 cm/sup 2/V/sup -1s-1/ is measured at 77K for the implanted GaAs SISFETs while 150,000 cm/sup 2/V/sup -1s-1/ is measured for the as-grown heterostructures. Small circuits, fabricated with these enhance-deplete GaAs SISFETs, are de- scribed.","PeriodicalId":247498,"journal":{"name":"IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, 1987. Proceedings.","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1987-08-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129260491","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1987-08-10DOI: 10.1109/CORNEL.1987.721244
T. Sollner
Resonant tunneling through double-barrier heterostructures has attracted increasing interest recently, largely because of the fast charge transport1 it provides. In addition, the negative differential resistance regions that exist in the current-voltage (I-V) curve (peak-to-valley ratios of 3.5:l at room tem~erature~-~ and nearly 1O:l at 77 K have been measured) suggest that high-speed devices based on the unique character of the I-V curve should be possible. For example, the negative differential resistance region is capable of providing the gain necessary for high-frequency o~cillations.~ In our laboratory we have been attempting to increase the frequency and power of these oscillators,6 and to demonstrate several different highfrequency devices. Others have worked toward a better understanding of the equivalent circuit of the device7 and the underlying processes responsible for the frequency Many three-terminal devices using resonant tunneling in various ways have also been proposed and fabricated.11-20 In this paper we will summarize the work at Lincoln Laboratory on microwave and millimeter-wave devices, discuss the possibility of applications of resonant tunneling to digital logic, and then review some three-terminal devices that have been proposed, and in some cases tested.
{"title":"Current Directions In Resonant Tunneling Research","authors":"T. Sollner","doi":"10.1109/CORNEL.1987.721244","DOIUrl":"https://doi.org/10.1109/CORNEL.1987.721244","url":null,"abstract":"Resonant tunneling through double-barrier heterostructures has attracted increasing interest recently, largely because of the fast charge transport1 it provides. In addition, the negative differential resistance regions that exist in the current-voltage (I-V) curve (peak-to-valley ratios of 3.5:l at room tem~erature~-~ and nearly 1O:l at 77 K have been measured) suggest that high-speed devices based on the unique character of the I-V curve should be possible. For example, the negative differential resistance region is capable of providing the gain necessary for high-frequency o~cillations.~ In our laboratory we have been attempting to increase the frequency and power of these oscillators,6 and to demonstrate several different highfrequency devices. Others have worked toward a better understanding of the equivalent circuit of the device7 and the underlying processes responsible for the frequency Many three-terminal devices using resonant tunneling in various ways have also been proposed and fabricated.11-20 In this paper we will summarize the work at Lincoln Laboratory on microwave and millimeter-wave devices, discuss the possibility of applications of resonant tunneling to digital logic, and then review some three-terminal devices that have been proposed, and in some cases tested.","PeriodicalId":247498,"journal":{"name":"IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, 1987. Proceedings.","volume":"46 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1987-08-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129588086","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1987-08-10DOI: 10.1109/CORNEL.1987.721226
L. Messick, R. Nguyen, D. Collins
Planar fully ion-implanted InP power MISFETS using SiO/sub 2/ as the gate insulator have been fabricated. At 9.7 GHz CW with 3.7 dB ain 800/spl mu/m gate width devices exhibited power per unit gate width as high as 2.9 W/mm, more than twice the highest value ever reported for GaAs FETs. For comparison at the same CW frequency and 4 dB gain our I mm gate width mesa-type epitaxial InP power MISFETs have demonstrated power per unit gate width as high as 4.5 W/mm, more than three times the highest GaAs value.
{"title":"Planar Fully Ion-Implanted High Power InP MISFETs","authors":"L. Messick, R. Nguyen, D. Collins","doi":"10.1109/CORNEL.1987.721226","DOIUrl":"https://doi.org/10.1109/CORNEL.1987.721226","url":null,"abstract":"Planar fully ion-implanted InP power MISFETS using SiO/sub 2/ as the gate insulator have been fabricated. At 9.7 GHz CW with 3.7 dB ain 800/spl mu/m gate width devices exhibited power per unit gate width as high as 2.9 W/mm, more than twice the highest value ever reported for GaAs FETs. For comparison at the same CW frequency and 4 dB gain our I mm gate width mesa-type epitaxial InP power MISFETs have demonstrated power per unit gate width as high as 4.5 W/mm, more than three times the highest GaAs value.","PeriodicalId":247498,"journal":{"name":"IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, 1987. Proceedings.","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1987-08-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126060271","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1987-08-10DOI: 10.1109/CORNEL.1987.721213
J. Kolodzey, S. Boor, P. Saunier, J. Lee, H. Tserng
We report the first high frequency measurements at 77 K of an InAlAs/InGaAs high electron mobility transistor. At 296 K, the current gain is 18 dB at 10 GHz and the current gain cutoff frequency is 80 GHz. At 77 K, the current gain increases to 22 dB at 10 GHz but the cutoff frequency drops to 36 GHz. The lower cutoff frequency at 77 K is associated with a steep current gain rolloff which is measured to be 12 dB/octave compared with 6 dBloctave at 296 K. This result can be modeled by excess device capacitance at 77 K.
{"title":"High Frequency Properties Of InA1As/InGaAs High Electron Mobility Transistors At 77 K","authors":"J. Kolodzey, S. Boor, P. Saunier, J. Lee, H. Tserng","doi":"10.1109/CORNEL.1987.721213","DOIUrl":"https://doi.org/10.1109/CORNEL.1987.721213","url":null,"abstract":"We report the first high frequency measurements at 77 K of an InAlAs/InGaAs high electron mobility transistor. At 296 K, the current gain is 18 dB at 10 GHz and the current gain cutoff frequency is 80 GHz. At 77 K, the current gain increases to 22 dB at 10 GHz but the cutoff frequency drops to 36 GHz. The lower cutoff frequency at 77 K is associated with a steep current gain rolloff which is measured to be 12 dB/octave compared with 6 dBloctave at 296 K. This result can be modeled by excess device capacitance at 77 K.","PeriodicalId":247498,"journal":{"name":"IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, 1987. Proceedings.","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1987-08-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127663194","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1987-08-10DOI: 10.1109/CORNEL.1987.721245
W. Frensley
The quantum-well resonant-tunneling diode (RTD) [ 1,2] is the simplest semiconductor heterostructure that displays interesting device properties due to quantum coherence effects. It is thus an ideal prototype system for which to develop techniques for the analysis of quantum devices. A form of quantum transport theory has been developed that is adapted to the study of quantum devices because i t provides a means of treating the electrical contacts to the device [3,41. Recent interest in the RTD can be attributed to the work of Sollner et al. [2], who demonstrated nonlinear electrical response in these devices at frequencies up to 2.5 THz. The existence of these results provides a motivation for the development of theoretical techniques to evaluate the small-signal ac response of a tunneling device. The present work demonstrates that such calculations may be readily performed by applying the techniques developed in [31 and [41.
{"title":"Quantum Transport Simulation Of A Resonant-Tunneling Diode","authors":"W. Frensley","doi":"10.1109/CORNEL.1987.721245","DOIUrl":"https://doi.org/10.1109/CORNEL.1987.721245","url":null,"abstract":"The quantum-well resonant-tunneling diode (RTD) [ 1,2] is the simplest semiconductor heterostructure that displays interesting device properties due to quantum coherence effects. It is thus an ideal prototype system for which to develop techniques for the analysis of quantum devices. A form of quantum transport theory has been developed that is adapted to the study of quantum devices because i t provides a means of treating the electrical contacts to the device [3,41. Recent interest in the RTD can be attributed to the work of Sollner et al. [2], who demonstrated nonlinear electrical response in these devices at frequencies up to 2.5 THz. The existence of these results provides a motivation for the development of theoretical techniques to evaluate the small-signal ac response of a tunneling device. The present work demonstrates that such calculations may be readily performed by applying the techniques developed in [31 and [41.","PeriodicalId":247498,"journal":{"name":"IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, 1987. Proceedings.","volume":"74 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1987-08-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115897254","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1987-08-10DOI: 10.1109/CORNEL.1987.721237
M. Rao, S. Long, H. Kroemer
A nonalloyed graded-gap scheme for obtaining ohmic contacts to ntype GaAs, by first growing a graded transition from GaAs to lnAs and then making a nonalloyed metallic contact to the InAs, was proposed by Woodall et al. [l]. The underlying idea was as follows. A metal-to-lnAs interface acts as an ideal negative-barrier ohmic contact because the Fermi level is pinned inside the lnAs conduction band, as shown in Fig. 1. However, if the GaAs-to-lnAs transition were not graded, it would act as a quasi-Schottky barrier, and the contact would be poor overall. Sufficient grading flattens out the heterojunction barrier and leads to an excellent ohmic contact with properties that make it an attractive alternative to the widely used Au/Ge/Ni/Au alloyed system. For p-type GaAs, the Ga(As,Sb) system could be similarly used, as proposed by Chang and Freeouf [2].
{"title":"A Self-Aligned AlGaAs/GaAs Heterostructure Bipolar Transistor With Non Alloyed Graded-Gap Ohmic Contacts To The Base And Emitter","authors":"M. Rao, S. Long, H. Kroemer","doi":"10.1109/CORNEL.1987.721237","DOIUrl":"https://doi.org/10.1109/CORNEL.1987.721237","url":null,"abstract":"A nonalloyed graded-gap scheme for obtaining ohmic contacts to ntype GaAs, by first growing a graded transition from GaAs to lnAs and then making a nonalloyed metallic contact to the InAs, was proposed by Woodall et al. [l]. The underlying idea was as follows. A metal-to-lnAs interface acts as an ideal negative-barrier ohmic contact because the Fermi level is pinned inside the lnAs conduction band, as shown in Fig. 1. However, if the GaAs-to-lnAs transition were not graded, it would act as a quasi-Schottky barrier, and the contact would be poor overall. Sufficient grading flattens out the heterojunction barrier and leads to an excellent ohmic contact with properties that make it an attractive alternative to the widely used Au/Ge/Ni/Au alloyed system. For p-type GaAs, the Ga(As,Sb) system could be similarly used, as proposed by Chang and Freeouf [2].","PeriodicalId":247498,"journal":{"name":"IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, 1987. Proceedings.","volume":"68 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1987-08-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114141229","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1987-08-10DOI: 10.1109/CORNEL.1987.721246
C. Huang, K. lkossi-Anastasiou, M. Paulus, C. Bozada, C. E. Stutz, R.L. Jones, K. Evans
Recent advances in Molecular Beam Epitaxy (MBE) technology have made possible the fabrication of heterojunction double barrier diodes (DBDs) with high peak to valley current (PVC) ratios. Goodhue et a/[ l ] repotted PVC ratios of 3.5 (10.0) at 300K (77K) in an AIAs/GaAs system. More recently, we [2] have reported PVC ratios of 3.9 (14.3) at 300K (77K) in an AIGaAdGaAs (x-0.42) system and of 3.6 (21.7) at 300K (77K) in a DBD in which the barriers were replaced with short period AIAdGaAs superlattices. These results, along with the high speed characteristics of tunneling devices, indicate the DBD may soon find practical application. Additional studies are still needed to characterize the DBD conduction mechanisms and to optimize device design.
分子束外延(MBE)技术的最新进展使得制造具有高峰谷电流(PVC)比的异质结双势垒二极管(dbd)成为可能。Goodhue et a/[l]报道了在300K (77K)下，在AIAs/GaAs体系中PVC比为3.5(10.0)。最近，我们[2]报道了300K (77K)下AIGaAdGaAs (x-0.42)体系的PVC比率为3.9 (14.3)，300K (77K)下DBD的PVC比率为3.6(21.7)，其中屏障被短周期AIAdGaAs超晶格取代。这些结果以及隧道装置的高速特性表明，DBD可能很快就会得到实际应用。还需要进一步的研究来表征DBD传导机制并优化器件设计。
{"title":"Temperature Effects On AlGaAs/GaAs Double Barrier Diodes With High Peak-to-Valley Current Ratios","authors":"C. Huang, K. lkossi-Anastasiou, M. Paulus, C. Bozada, C. E. Stutz, R.L. Jones, K. Evans","doi":"10.1109/CORNEL.1987.721246","DOIUrl":"https://doi.org/10.1109/CORNEL.1987.721246","url":null,"abstract":"Recent advances in Molecular Beam Epitaxy (MBE) technology have made possible the fabrication of heterojunction double barrier diodes (DBDs) with high peak to valley current (PVC) ratios. Goodhue et a/[ l ] repotted PVC ratios of 3.5 (10.0) at 300K (77K) in an AIAs/GaAs system. More recently, we [2] have reported PVC ratios of 3.9 (14.3) at 300K (77K) in an AIGaAdGaAs (x-0.42) system and of 3.6 (21.7) at 300K (77K) in a DBD in which the barriers were replaced with short period AIAdGaAs superlattices. These results, along with the high speed characteristics of tunneling devices, indicate the DBD may soon find practical application. Additional studies are still needed to characterize the DBD conduction mechanisms and to optimize device design.","PeriodicalId":247498,"journal":{"name":"IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, 1987. Proceedings.","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1987-08-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127117146","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1987-08-10DOI: 10.1109/CORNEL.1987.721249
B. Bayraktaroglu, N. Camilleri, S. A. Lambert
GaAs IMPATT diodes are commonly used as the power source in millimeter wave transmitters. The power performances of IMPATT diodes are unmatched by any other solid1 state device at high frequencies, therefore IMPATT diodes in general and GaAs IMPATTs in particular fulfill the needs of such systems for high power and high efficiency. Conventionally, IMPATTs are used as discrete devices in hybrid circuits to maximize their output. More recently, monolithic circuits containing IMPATT diodes have also become available[l,2] The capability of integrating IMPATTs with passive circuit elements on a single-chip creates the possibilities of realizing more complex yet compact monolithic subsytems at frequencies extending into the mm-wave region. One example of such an integration is the fabrication of oscillators and radiating elements of a phased array system in a monolithic form. In such a system, each radiating element is fed by its own power source eliminating the need for a complex and lossy power distribution network.
{"title":"Monolithic Millimeter Wave Impatt Transmitter","authors":"B. Bayraktaroglu, N. Camilleri, S. A. Lambert","doi":"10.1109/CORNEL.1987.721249","DOIUrl":"https://doi.org/10.1109/CORNEL.1987.721249","url":null,"abstract":"GaAs IMPATT diodes are commonly used as the power source in millimeter wave transmitters. The power performances of IMPATT diodes are unmatched by any other solid1 state device at high frequencies, therefore IMPATT diodes in general and GaAs IMPATTs in particular fulfill the needs of such systems for high power and high efficiency. Conventionally, IMPATTs are used as discrete devices in hybrid circuits to maximize their output. More recently, monolithic circuits containing IMPATT diodes have also become available[l,2] The capability of integrating IMPATTs with passive circuit elements on a single-chip creates the possibilities of realizing more complex yet compact monolithic subsytems at frequencies extending into the mm-wave region. One example of such an integration is the fabrication of oscillators and radiating elements of a phased array system in a monolithic form. In such a system, each radiating element is fed by its own power source eliminating the need for a complex and lossy power distribution network.","PeriodicalId":247498,"journal":{"name":"IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, 1987. Proceedings.","volume":"63 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1987-08-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116543089","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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