Pub Date : 2012-05-21DOI: 10.1109/FCS.2012.6243743
A. Lepetaev, A. Kosykh
In resonators of standard construction of SC-cut motional resistance of temperature sensitive mode B is commensurable with motional resistance of main mode C that creates danger of oscillator excitation on mode B. In given work in-depth analysis of oscillation excitation in dual-rotated crystal cuts is provided. It is shown that standard central layout of electrodes for SC-cut resonators is not optimal. Results of calculations of motional resistance of the C and B modes of oscillations for standard (central) and displaced excitation electrodes are resulted. It is shown that at the correct choice of electrodes layout it is possible to change a ratio of modes resistances considerably that allows providing reliable excitation of main mode C.
{"title":"New method of multy-mode oscillations control in crystal resonators","authors":"A. Lepetaev, A. Kosykh","doi":"10.1109/FCS.2012.6243743","DOIUrl":"https://doi.org/10.1109/FCS.2012.6243743","url":null,"abstract":"In resonators of standard construction of SC-cut motional resistance of temperature sensitive mode B is commensurable with motional resistance of main mode C that creates danger of oscillator excitation on mode B. In given work in-depth analysis of oscillation excitation in dual-rotated crystal cuts is provided. It is shown that standard central layout of electrodes for SC-cut resonators is not optimal. Results of calculations of motional resistance of the C and B modes of oscillations for standard (central) and displaced excitation electrodes are resulted. It is shown that at the correct choice of electrodes layout it is possible to change a ratio of modes resistances considerably that allows providing reliable excitation of main mode C.","PeriodicalId":256670,"journal":{"name":"2012 IEEE International Frequency Control Symposium Proceedings","volume":"69 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-05-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132635525","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-05-21DOI: 10.1109/FCS.2012.6243728
T. Simpson, Jia-Ming Liu, M. Almulla, N. Usechak, V. Kovanis
Combining optical injection and polarization-rotated optical feedback in a semiconductor laser can induce self-referenced periodic output that is widely tunable by simply varying the dc-bias points of the master and slave lasers. We observed feedback-induced reduction of the pulsation peak linewidth by more than two orders of magnitude relative to the injection-only case. The nonlinear dynamics of the optically injected semiconductor laser can be used to minimize sensitivity to fluctuations in the operating points. Performance is negatively affected by interference between the external injection signal and residual feedback in the same polarization.
{"title":"Tunable photonic microwave oscillator self-locked by polarization-rotated optical feedback","authors":"T. Simpson, Jia-Ming Liu, M. Almulla, N. Usechak, V. Kovanis","doi":"10.1109/FCS.2012.6243728","DOIUrl":"https://doi.org/10.1109/FCS.2012.6243728","url":null,"abstract":"Combining optical injection and polarization-rotated optical feedback in a semiconductor laser can induce self-referenced periodic output that is widely tunable by simply varying the dc-bias points of the master and slave lasers. We observed feedback-induced reduction of the pulsation peak linewidth by more than two orders of magnitude relative to the injection-only case. The nonlinear dynamics of the optically injected semiconductor laser can be used to minimize sensitivity to fluctuations in the operating points. Performance is negatively affected by interference between the external injection signal and residual feedback in the same polarization.","PeriodicalId":256670,"journal":{"name":"2012 IEEE International Frequency Control Symposium Proceedings","volume":"77 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-05-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130807457","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-05-21DOI: 10.1109/FCS.2012.6243605
Haifeng Zhang, B. Montz, Tinghui Fan, J. Kosinski
Langasite (La3Ga5SiO14), a promising new piezoelectric crystal, has attracted interest from piezoelectric communities around the world for its superior behavior such as having a high Q, stable frequency-temperature behavior, high electrical-mechanical coupling coefficient and no phase transition to a high temperature form. The combination of these superior properties makes it ideal for high temperature sensor applications. This article presents a system for a wireless langasite resonator force sensor. The system uses frequency conversion techniques to convert the sensor's ultrasonic signal to a microwave signal in order to transmit the signal wirelessly without digitization. The sensor is able to transmit the ultrasound signal by using passive components that modulate and transmit the full waveform. A specially designed loading device is constructed in order to measure the frequency shifts of the langasite resonator caused by a pair of diametric forces. The wireless transmission system was tested using a doubly rotated plano-plano langasite resonator (YXlw)θ/Φ 45°/85° operating on its third overtone (6.304844 MHz) as its sensor. Wireless system data obtained using a network analyzer was compared with similar wired system data. The force-frequency effect at different azimuth angles was measured for both wired and wireless configurations as well. The result shows a good agreement between the wired and wireless signals. The wireless langasite resonator force sensing system has a large variety of possible applications, and the wireless transmission system has the potential to be used with other types of sensors as well.
{"title":"Wireless langasite resonator as a force sensor","authors":"Haifeng Zhang, B. Montz, Tinghui Fan, J. Kosinski","doi":"10.1109/FCS.2012.6243605","DOIUrl":"https://doi.org/10.1109/FCS.2012.6243605","url":null,"abstract":"Langasite (La3Ga5SiO14), a promising new piezoelectric crystal, has attracted interest from piezoelectric communities around the world for its superior behavior such as having a high Q, stable frequency-temperature behavior, high electrical-mechanical coupling coefficient and no phase transition to a high temperature form. The combination of these superior properties makes it ideal for high temperature sensor applications. This article presents a system for a wireless langasite resonator force sensor. The system uses frequency conversion techniques to convert the sensor's ultrasonic signal to a microwave signal in order to transmit the signal wirelessly without digitization. The sensor is able to transmit the ultrasound signal by using passive components that modulate and transmit the full waveform. A specially designed loading device is constructed in order to measure the frequency shifts of the langasite resonator caused by a pair of diametric forces. The wireless transmission system was tested using a doubly rotated plano-plano langasite resonator (YXlw)θ/Φ 45°/85° operating on its third overtone (6.304844 MHz) as its sensor. Wireless system data obtained using a network analyzer was compared with similar wired system data. The force-frequency effect at different azimuth angles was measured for both wired and wireless configurations as well. The result shows a good agreement between the wired and wireless signals. The wireless langasite resonator force sensing system has a large variety of possible applications, and the wireless transmission system has the potential to be used with other types of sensors as well.","PeriodicalId":256670,"journal":{"name":"2012 IEEE International Frequency Control Symposium Proceedings","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-05-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132816869","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-05-21DOI: 10.1109/FCS.2012.6243637
D. Malocha, M. Gallagher
The focus of this paper is to discuss theoretical and practical applications of a coherent correlator transceiver (CCT) system approach for SAW RFID sensors, with the vision toward low cost sensing. For high volume applications, it appears achievable to meet the ultimate system goals and costs with RF device integration. As with most technologies, the sensor device and system volumes will drive the cost down, and it seems reasonable to expect a similar product cycle as with SAW filters. Theoretical predictions of range, SNR, and correlation properties will be shown for differing system parameters, such as bandwidth, power, coherent integration, and ADC parameters. A comparison of SAW device resonant, CDMA and OFC type signal formats will be given and an approach for signal detection and extraction discussed. Recent measurement results for a 915 MHZ, 64 MHz bandwidth, CCT system using OFC SAW temperature sensors will be given and compared to predictions, which demonstrates the practicality and implementation of the system architecture.
{"title":"Coherent correlator multi-sensor receiver","authors":"D. Malocha, M. Gallagher","doi":"10.1109/FCS.2012.6243637","DOIUrl":"https://doi.org/10.1109/FCS.2012.6243637","url":null,"abstract":"The focus of this paper is to discuss theoretical and practical applications of a coherent correlator transceiver (CCT) system approach for SAW RFID sensors, with the vision toward low cost sensing. For high volume applications, it appears achievable to meet the ultimate system goals and costs with RF device integration. As with most technologies, the sensor device and system volumes will drive the cost down, and it seems reasonable to expect a similar product cycle as with SAW filters. Theoretical predictions of range, SNR, and correlation properties will be shown for differing system parameters, such as bandwidth, power, coherent integration, and ADC parameters. A comparison of SAW device resonant, CDMA and OFC type signal formats will be given and an approach for signal detection and extraction discussed. Recent measurement results for a 915 MHZ, 64 MHz bandwidth, CCT system using OFC SAW temperature sensors will be given and compared to predictions, which demonstrates the practicality and implementation of the system architecture.","PeriodicalId":256670,"journal":{"name":"2012 IEEE International Frequency Control Symposium Proceedings","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-05-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133203775","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-05-21DOI: 10.1109/FCS.2012.6243594
A. Docherty, C. Menyuk, O. Okusaga, Weimin Zhou
Optical fiber-length-dependent flicker phase noise has been identified as a major limit to the reduction of phase noise in optoelectronic oscillators (OEOs). We demonstrate that in our system the largest contributor to low-frequency flicker noise is from Rayleigh scattering through the fiber combined with amplitude-to-phase conversion in the RF amplifiers.
{"title":"Stimulated Rayleigh scattering and amplitude-to-phase conversion as a source of length-dependent phase noise in OEOs","authors":"A. Docherty, C. Menyuk, O. Okusaga, Weimin Zhou","doi":"10.1109/FCS.2012.6243594","DOIUrl":"https://doi.org/10.1109/FCS.2012.6243594","url":null,"abstract":"Optical fiber-length-dependent flicker phase noise has been identified as a major limit to the reduction of phase noise in optoelectronic oscillators (OEOs). We demonstrate that in our system the largest contributor to low-frequency flicker noise is from Rayleigh scattering through the fiber combined with amplitude-to-phase conversion in the RF amplifiers.","PeriodicalId":256670,"journal":{"name":"2012 IEEE International Frequency Control Symposium Proceedings","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-05-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127402749","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-05-21DOI: 10.1109/FCS.2012.6243589
Yuanhong Cao, Lin Yang, Miao Liu, Ning Wang, Runchang Du, Chun Li
Coefficient is one of the main factors which results in Rb clock to be as second frequency standard. Coefficient is from frequency shift mechanisms because of RF power, intensity of lamp light and collision between atoms in absorption cell. However, Rb clock has many advantages in Power dissipation, dimension and cost in comparison with H-maser and Cs beam. This paper shows a traditional Rubidium atomic clock with high frequency accuracy by 10 folders than ordinary Rb products while compensated techniques was added into the Rb clock. The compensated techniques are consisted of three steps. The first is dynamically regulating work temperature of lamp and cavity by the baseplate temperature; the second is taking 6.8GHz multiplier circuits with auto temperature compensation function. The final is employing digital embedded software in ADC, DAC and MCU to definitely regulate the frequency output by high order fitted cure. By the compensations, the coefficients 2E-11 below is realized within the range of -10~60°C per day. This Rb clock can be qualified to specifications of timing instruments in next generation Telecom.
{"title":"A high accurate Rb atomic clock with the compensated techniques","authors":"Yuanhong Cao, Lin Yang, Miao Liu, Ning Wang, Runchang Du, Chun Li","doi":"10.1109/FCS.2012.6243589","DOIUrl":"https://doi.org/10.1109/FCS.2012.6243589","url":null,"abstract":"Coefficient is one of the main factors which results in Rb clock to be as second frequency standard. Coefficient is from frequency shift mechanisms because of RF power, intensity of lamp light and collision between atoms in absorption cell. However, Rb clock has many advantages in Power dissipation, dimension and cost in comparison with H-maser and Cs beam. This paper shows a traditional Rubidium atomic clock with high frequency accuracy by 10 folders than ordinary Rb products while compensated techniques was added into the Rb clock. The compensated techniques are consisted of three steps. The first is dynamically regulating work temperature of lamp and cavity by the baseplate temperature; the second is taking 6.8GHz multiplier circuits with auto temperature compensation function. The final is employing digital embedded software in ADC, DAC and MCU to definitely regulate the frequency output by high order fitted cure. By the compensations, the coefficients 2E-11 below is realized within the range of -10~60°C per day. This Rb clock can be qualified to specifications of timing instruments in next generation Telecom.","PeriodicalId":256670,"journal":{"name":"2012 IEEE International Frequency Control Symposium Proceedings","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-05-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124534933","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-05-21DOI: 10.1109/FCS.2012.6243711
Cheng-Chi Chen, Ming-Huang Li, Wen-Chien Chen, Huan-Tse Yu, Sheng-Shian Li
A very-high-frequency (VHF) bulk-mode II-BAR CMOS-MEMS resonator array with electrothermal actuation and piezoresistive sensing (thermal-piezoresistive transduction) under a novel differential mode of operation has been demonstrated for the first time using a standard 0.35μm CMOS process. The proposed array consists of SiO2 and embedded polysilicon, the former of which provides high-Q structural material while the latter serves as both joule-heating elements and piezoresistors. Such a thermal-piezoresistive II-BAR array technique not only inherits all advantages from the single II-BAR but also shows great potential for low feedthrough, low motional impedance, and high power efficiency in VHF or ultra-high-frequency (UHF) operation using advanced down scaling and large-scale integrated (LSI) arrays.
{"title":"Thermally-actuated and piezoresistively-sensed CMOS-MEMS resonator array using differential-mode operation","authors":"Cheng-Chi Chen, Ming-Huang Li, Wen-Chien Chen, Huan-Tse Yu, Sheng-Shian Li","doi":"10.1109/FCS.2012.6243711","DOIUrl":"https://doi.org/10.1109/FCS.2012.6243711","url":null,"abstract":"A very-high-frequency (VHF) bulk-mode II-BAR CMOS-MEMS resonator array with electrothermal actuation and piezoresistive sensing (thermal-piezoresistive transduction) under a novel differential mode of operation has been demonstrated for the first time using a standard 0.35μm CMOS process. The proposed array consists of SiO2 and embedded polysilicon, the former of which provides high-Q structural material while the latter serves as both joule-heating elements and piezoresistors. Such a thermal-piezoresistive II-BAR array technique not only inherits all advantages from the single II-BAR but also shows great potential for low feedthrough, low motional impedance, and high power efficiency in VHF or ultra-high-frequency (UHF) operation using advanced down scaling and large-scale integrated (LSI) arrays.","PeriodicalId":256670,"journal":{"name":"2012 IEEE International Frequency Control Symposium Proceedings","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-05-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114332736","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-05-21DOI: 10.1109/FCS.2012.6243650
K. Saleh, P. Merrer, O. Llopis, G. Cibiel
Theoretical and experimental optimization studies are presented in this paper, where the aim is to improve the phase noise of an optoelectronic oscillator based on a passive fiber ring resonator. Our experimental results demonstrate a significant reduction in the phase noise of the final optimized system, which is also compared to the best existing oscillator of the same type, an active cavity based coupled optoelectronic oscillator.
{"title":"Optoelectronic oscillator based on fiber ring resonator: Overall system optimization and phase noise reduction","authors":"K. Saleh, P. Merrer, O. Llopis, G. Cibiel","doi":"10.1109/FCS.2012.6243650","DOIUrl":"https://doi.org/10.1109/FCS.2012.6243650","url":null,"abstract":"Theoretical and experimental optimization studies are presented in this paper, where the aim is to improve the phase noise of an optoelectronic oscillator based on a passive fiber ring resonator. Our experimental results demonstrate a significant reduction in the phase noise of the final optimized system, which is also compared to the best existing oscillator of the same type, an active cavity based coupled optoelectronic oscillator.","PeriodicalId":256670,"journal":{"name":"2012 IEEE International Frequency Control Symposium Proceedings","volume":"158 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-05-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115130903","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-05-21DOI: 10.1109/FCS.2012.6243740
H. G. Barrow, T. Naing, R. Schneider, T. Rocheleau, V. Yeh, Z. Ren, C. Nguyen
A capacitive-comb transduced micromechanical resonator using aggressive lithography to occupy only 0.0154-mm2 of die area has been combined via bond-wiring with a custom ASIC sustaining amplifier and a supply voltage of only 1.65V to realize a 32.768-kHz real-time clock oscillator more than 100× smaller by area than miniaturized quartz crystal implementations and at least 4× smaller than other MEMS-based approaches, including those using piezoelectric material. The key to achieving such large reductions in size is the enormous rate at which scaling improves the performance of capacitive-comb transduced folded-beam micromechanical resonators, for which scaling of lateral dimensions by a factor S provides an S2× reduction in both motional resistance and footprint for a given resonance frequency. This is a very strong dependency that raises eyebrows, since the size of the frequency-setting tank element may soon become the most important attribute governing cost in a potential MEMS-based or otherwise batch-fabricated 32.768-kHz timing oscillator market. In addition, unlike quartz counterparts, the size reduction demonstrated here actually reduces power consumption, allowing this oscillator to operate with only 2.1μW of DC power.
{"title":"A real-time 32.768-kHz clock oscillator using a 0.0154-mm2 micromechanical resonator frequency-setting element","authors":"H. G. Barrow, T. Naing, R. Schneider, T. Rocheleau, V. Yeh, Z. Ren, C. Nguyen","doi":"10.1109/FCS.2012.6243740","DOIUrl":"https://doi.org/10.1109/FCS.2012.6243740","url":null,"abstract":"A capacitive-comb transduced micromechanical resonator using aggressive lithography to occupy only 0.0154-mm2 of die area has been combined via bond-wiring with a custom ASIC sustaining amplifier and a supply voltage of only 1.65V to realize a 32.768-kHz real-time clock oscillator more than 100× smaller by area than miniaturized quartz crystal implementations and at least 4× smaller than other MEMS-based approaches, including those using piezoelectric material. The key to achieving such large reductions in size is the enormous rate at which scaling improves the performance of capacitive-comb transduced folded-beam micromechanical resonators, for which scaling of lateral dimensions by a factor S provides an S2× reduction in both motional resistance and footprint for a given resonance frequency. This is a very strong dependency that raises eyebrows, since the size of the frequency-setting tank element may soon become the most important attribute governing cost in a potential MEMS-based or otherwise batch-fabricated 32.768-kHz timing oscillator market. In addition, unlike quartz counterparts, the size reduction demonstrated here actually reduces power consumption, allowing this oscillator to operate with only 2.1μW of DC power.","PeriodicalId":256670,"journal":{"name":"2012 IEEE International Frequency Control Symposium Proceedings","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-05-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124495151","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-05-21DOI: 10.1109/FCS.2012.6243706
Wen-Chien Chen, W. Fang, Sheng-Shian Li
A fully differential CMOS-MEMS oxide resonator fabricated using 0.18 μm CMOS-MEMS platform via metal wet-etching post process has been demonstrated with Q >; 10,000, first time ever in any CMOS-MEMS resonators, and more than 25 dB signal-to-feedthrough ratio at 47.9 MHz. Key to attaining such performance attributes to (1) the bulk-mode vibration to enable exceptional Q and much higher frequencies and (2) the oxide-rich structure with embedded metal electrodes for capacitive transduction, where SiO2 offers better mechanical properties than metals to minimize intrinsic energy loss and where flexible electrical routing facilitates fully differential configuration to suppress capacitive feedthroughs. In addition, a previously developed metal wet-etching technique capable of releasing large device areas has been successfully transferred from 0.35 μm 2-Poly-4-Metal (2P4M) CMOS process to a new 0.18 μm 1-Poly-6-Metal (1P6M) technology node, therefore greatly lowering the motional impedance of the capacitively-transduced resonators due to smaller electrode-to-resonator gap spacing and larger transduction areas. This technology paves a way to realize fully-integrated CMOS-MEMS oscillators and filters which might benefit future single-chip transceivers for wireless communications.
{"title":"VHF CMOS-MEMS oxide resonators with Q > 10,000","authors":"Wen-Chien Chen, W. Fang, Sheng-Shian Li","doi":"10.1109/FCS.2012.6243706","DOIUrl":"https://doi.org/10.1109/FCS.2012.6243706","url":null,"abstract":"A fully differential CMOS-MEMS oxide resonator fabricated using 0.18 μm CMOS-MEMS platform via metal wet-etching post process has been demonstrated with Q >; 10,000, first time ever in any CMOS-MEMS resonators, and more than 25 dB signal-to-feedthrough ratio at 47.9 MHz. Key to attaining such performance attributes to (1) the bulk-mode vibration to enable exceptional Q and much higher frequencies and (2) the oxide-rich structure with embedded metal electrodes for capacitive transduction, where SiO2 offers better mechanical properties than metals to minimize intrinsic energy loss and where flexible electrical routing facilitates fully differential configuration to suppress capacitive feedthroughs. In addition, a previously developed metal wet-etching technique capable of releasing large device areas has been successfully transferred from 0.35 μm 2-Poly-4-Metal (2P4M) CMOS process to a new 0.18 μm 1-Poly-6-Metal (1P6M) technology node, therefore greatly lowering the motional impedance of the capacitively-transduced resonators due to smaller electrode-to-resonator gap spacing and larger transduction areas. This technology paves a way to realize fully-integrated CMOS-MEMS oscillators and filters which might benefit future single-chip transceivers for wireless communications.","PeriodicalId":256670,"journal":{"name":"2012 IEEE International Frequency Control Symposium Proceedings","volume":"103 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-05-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124605335","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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