The life ecology experimental cabinet on China Space Station is a microgravity scientific experimental platform which is suitable for plant individuals, fish, snails, fruit flies and other biological individuals as the research objects. It includes a general biological culture module (GBCM), a small general biological culture module (SGBCM), a small centrifugal experiment module (SCEM), a small controlled life ecological experiment module (SCLEEM) and a microbial online monitoring module (MOMM). The GBCM provides suitable environmental conditions for biological experiments, including temperature, humidity, light, gas concentration, visible light imaging detection, fluorescence imaging detection, program-controlled instructions, etc. The SGBCM internally provides temperature control and imaging monitoring. Other functions are realized by the replaceable culture unit. The SCEM can realize 1-2g gravity simulation in microgravity environment, and is able to support variable gravity biology research and microgravity comparison experimental research. In SCLEEM, it is planned to carry out a closed aquatic organism culture experiment with algae, fishes and snails as members. Algae provides necessary oxygen for fishes and snails through photosynthesis. MOMM is a payload used to detect the presence and classification of microorganisms in the environment. Each module works independently and has an independent electronic control system with the same architecture.This paper will introduce its basic functions, experimental conditions and expandable interface resources module by module. It provides a basis for space biologists to design experiments and a reference for payload engineers.
{"title":"Experimental system of life ecological science on China Space Station","authors":"Fangwu Liu, Weibo Zheng, Guanghui Tong, Yongchun Yuan, Qing Tian, Dazhao Xu, Chao Jia, Tao Zhang","doi":"10.1117/12.2665052","DOIUrl":"https://doi.org/10.1117/12.2665052","url":null,"abstract":"The life ecology experimental cabinet on China Space Station is a microgravity scientific experimental platform which is suitable for plant individuals, fish, snails, fruit flies and other biological individuals as the research objects. It includes a general biological culture module (GBCM), a small general biological culture module (SGBCM), a small centrifugal experiment module (SCEM), a small controlled life ecological experiment module (SCLEEM) and a microbial online monitoring module (MOMM). The GBCM provides suitable environmental conditions for biological experiments, including temperature, humidity, light, gas concentration, visible light imaging detection, fluorescence imaging detection, program-controlled instructions, etc. The SGBCM internally provides temperature control and imaging monitoring. Other functions are realized by the replaceable culture unit. The SCEM can realize 1-2g gravity simulation in microgravity environment, and is able to support variable gravity biology research and microgravity comparison experimental research. In SCLEEM, it is planned to carry out a closed aquatic organism culture experiment with algae, fishes and snails as members. Algae provides necessary oxygen for fishes and snails through photosynthesis. MOMM is a payload used to detect the presence and classification of microorganisms in the environment. Each module works independently and has an independent electronic control system with the same architecture.This paper will introduce its basic functions, experimental conditions and expandable interface resources module by module. It provides a basis for space biologists to design experiments and a reference for payload engineers.","PeriodicalId":258680,"journal":{"name":"Earth and Space From Infrared to Terahertz (ESIT 2022)","volume":"113 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-01-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117258535","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Dan Yang, Huijun Guo, Liao Yang, Lu Chen, Chun Lin, R. Ding, Li He
HgCdTe electron avalanche photodiodes (e-APDs) with single-carrier multiplication hold great promise for weak signal detection. This work investigates the key metrics that affect the signal-to-noise ratio of mid-wavelength infrared (MWIR) Hg0.7Cd0.3Te e-APD: current, gain, and excess noise factor. The gain is over 1000 at -10 V, but the maximum useful gain is limited by the generation of band-to-band tunneling current at higher bias voltages. The gain dispersion obtained by characterizing the focal plane array is 4.7% at -7 V, indicating a relatively homogeneous gain from pixel to pixel. The excess noise factors evaluated by the noise power spectral density and the gain fluctuation methods both range from 1 to 1.32 at gains below 400, demonstrating the property of near excess-noise-free amplification of HgCdTe e-APDs.
{"title":"Characterization of gain and excess noise for mid-wavelength infrared HgCdTe electron avalanche photodiodes","authors":"Dan Yang, Huijun Guo, Liao Yang, Lu Chen, Chun Lin, R. Ding, Li He","doi":"10.1117/12.2665331","DOIUrl":"https://doi.org/10.1117/12.2665331","url":null,"abstract":"HgCdTe electron avalanche photodiodes (e-APDs) with single-carrier multiplication hold great promise for weak signal detection. This work investigates the key metrics that affect the signal-to-noise ratio of mid-wavelength infrared (MWIR) Hg0.7Cd0.3Te e-APD: current, gain, and excess noise factor. The gain is over 1000 at -10 V, but the maximum useful gain is limited by the generation of band-to-band tunneling current at higher bias voltages. The gain dispersion obtained by characterizing the focal plane array is 4.7% at -7 V, indicating a relatively homogeneous gain from pixel to pixel. The excess noise factors evaluated by the noise power spectral density and the gain fluctuation methods both range from 1 to 1.32 at gains below 400, demonstrating the property of near excess-noise-free amplification of HgCdTe e-APDs.","PeriodicalId":258680,"journal":{"name":"Earth and Space From Infrared to Terahertz (ESIT 2022)","volume":"17 4","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-01-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120853805","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Jiang Zhi, Zhou Xu-chang, Li Jun-bin, Wang Hai-peng, Huang You-Wen, Li Yan-hui, Yang Chun-zhang, Kong Jin-cheng
Long-wavelength infrared InAs/GaSb type-II superlattice PπBN photodetectors are demonstrated on GaSb substrates. The focal plane array device consists of a 2.0μm thick absorber layer and has a 50% cutoff wavelength of 11.3μm, and a maximum resistance-area product of 800 Ω•cm2 at 77 K. And the resistance-area product stay above 500 Ω•cm2 at the range from -200 mV to -1100 mV. These single units show good consistency. It has laid a reliable foundation for the manufacturing of focal plane arrays.
{"title":"Long-wavelength infrared PπBN photodetectors based on InAs/GaSb type-II superlattice","authors":"Jiang Zhi, Zhou Xu-chang, Li Jun-bin, Wang Hai-peng, Huang You-Wen, Li Yan-hui, Yang Chun-zhang, Kong Jin-cheng","doi":"10.1117/12.2664979","DOIUrl":"https://doi.org/10.1117/12.2664979","url":null,"abstract":"Long-wavelength infrared InAs/GaSb type-II superlattice PπBN photodetectors are demonstrated on GaSb substrates. The focal plane array device consists of a 2.0μm thick absorber layer and has a 50% cutoff wavelength of 11.3μm, and a maximum resistance-area product of 800 Ω•cm2 at 77 K. And the resistance-area product stay above 500 Ω•cm2 at the range from -200 mV to -1100 mV. These single units show good consistency. It has laid a reliable foundation for the manufacturing of focal plane arrays.","PeriodicalId":258680,"journal":{"name":"Earth and Space From Infrared to Terahertz (ESIT 2022)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-01-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127124322","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The operating principle of the static Martian wind imaging Michelson Interferometer (MWIMI) developed by our research group is discussed in this paper, and the errors caused by the core components of the interferometer are analyzed, including the tilt of the quadrangle fixed mirror, surface heterogeneity and reflectivity errors. This work mainly studies the influence of error on the measurement of wind speed and temperature, and the error curve is obtained by computer simulation. The limit of tilt angle, surface accuracy and reflectivity of the four-quadrant fixed mirror can be obtained from this curve. Ultimately, the accuracy of the MWIMI instrument is discussed according to the actual design parameters, which verifies the high measurement accuracy of the instrument. This study lays a theoretical foundation for the design, development and engineering of a new type of wind imaging interferometer, and provides a reference for the study of Mars atmosphere, which is of great significance for the climate change, environmental detection and space exploration of Mars.
{"title":"Influence of the four-quadrant fixed mirror on the temperature and wind velocity inversion for the near-infrared static Mars wind imaging interferometer","authors":"Chunmin Zhang, Yu-Jin Zhang, Yifan He","doi":"10.1117/12.2665176","DOIUrl":"https://doi.org/10.1117/12.2665176","url":null,"abstract":"The operating principle of the static Martian wind imaging Michelson Interferometer (MWIMI) developed by our research group is discussed in this paper, and the errors caused by the core components of the interferometer are analyzed, including the tilt of the quadrangle fixed mirror, surface heterogeneity and reflectivity errors. This work mainly studies the influence of error on the measurement of wind speed and temperature, and the error curve is obtained by computer simulation. The limit of tilt angle, surface accuracy and reflectivity of the four-quadrant fixed mirror can be obtained from this curve. Ultimately, the accuracy of the MWIMI instrument is discussed according to the actual design parameters, which verifies the high measurement accuracy of the instrument. This study lays a theoretical foundation for the design, development and engineering of a new type of wind imaging interferometer, and provides a reference for the study of Mars atmosphere, which is of great significance for the climate change, environmental detection and space exploration of Mars.","PeriodicalId":258680,"journal":{"name":"Earth and Space From Infrared to Terahertz (ESIT 2022)","volume":"141 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-01-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127350435","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
SAR ADC has the characteristics of simple structure, low power consumption, high energy efficiency and good process compatibility. Nowadays, more and more scenarios have higher requirements for the accuracy of SAR ADC. A 14bits SAR ADC with calibration function was designed based on a 0.18μm CMOS process. Design a DAC with a segmented non-binary redundant architecture. Segmented DACs effectively reduce area overhead, while non-binary weighting reduces the effect of capacitor mismatched accuracy, thereby improving ADC accuracy. The simulation condition is that the sampling rate is 1MSPS, and the simulation results show that: Using this calibrated SAR structure, the ENOB is 13.34bits, the SNR is 74.03dB, the SFDR is 81.36dB, and the THD is -79.20dB.
SAR ADC具有结构简单、功耗低、能效高、工艺兼容性好等特点。目前，越来越多的应用场景对SAR ADC的精度要求越来越高。基于0.18μm CMOS工艺，设计了具有标定功能的14位SAR ADC。设计一个分段非二进制冗余架构的DAC。分段式ADC有效地减少了面积开销，而非二元加权减少了电容失配精度的影响，从而提高了ADC精度。仿真条件为采样率为1MSPS，仿真结果表明:采用该标定SAR结构，ENOB为13.34bits，信噪比为74.03dB, SFDR为81.36dB, THD为-79.20dB。
{"title":"Research on a high-precision SAR ADC based on non-binary redundancy structure","authors":"Wengang Tao, Song Jing, Hongyi Wang, Yi-Jie Lu, Songlei Huang, Jiaxiong Fang","doi":"10.1117/12.2664927","DOIUrl":"https://doi.org/10.1117/12.2664927","url":null,"abstract":"SAR ADC has the characteristics of simple structure, low power consumption, high energy efficiency and good process compatibility. Nowadays, more and more scenarios have higher requirements for the accuracy of SAR ADC. A 14bits SAR ADC with calibration function was designed based on a 0.18μm CMOS process. Design a DAC with a segmented non-binary redundant architecture. Segmented DACs effectively reduce area overhead, while non-binary weighting reduces the effect of capacitor mismatched accuracy, thereby improving ADC accuracy. The simulation condition is that the sampling rate is 1MSPS, and the simulation results show that: Using this calibrated SAR structure, the ENOB is 13.34bits, the SNR is 74.03dB, the SFDR is 81.36dB, and the THD is -79.20dB.","PeriodicalId":258680,"journal":{"name":"Earth and Space From Infrared to Terahertz (ESIT 2022)","volume":"57 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-01-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126965852","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Photo-conductive terahertz source (PCA) has been widely used in the terahertz time-domain spectral system (THz-TDS). In the THz-TDS system, the biased PCA is triggered by a femtosecond laser to radiate terahertz waves to free space due to the accelerated motion of photogenerated carriers under the bias electric field, and a pulse current is formed in the PCA bias loop. Generally, the circuit that loads bias voltage to PCA has different circuit designs, so there is inevitably a specific inductance in the base circuit of PCA mounting. The electromagnetic inertia caused by this will significantly affect the pulse width of the current in the circuit. The pulse width of the current pulse will be widened with the increase of the circuit inductance. Therefore, whether the inductance of The PCA circuit will affect the character of the THz wave radiated from PCA to free space is a problem faced by the circuit design based on PCA. In this paper, inductance elements with different inductance values are added to the PCA circuit, and the time domain waveform and spectrum of THz wave radiated by PCA are tested experimentally. The results show that the inductance value in the PCA circuit has no noticeable effect on the THz wave released by PCA, thus providing an experimental basis for designing the THz PCA substrate circuit applied on different occasions.
{"title":"Function analysis of loop inductance in photo-conductive terahertz source","authors":"T. Shang, W. Shi, Zhi Jin, Tiantian Wang","doi":"10.1117/12.2664639","DOIUrl":"https://doi.org/10.1117/12.2664639","url":null,"abstract":"Photo-conductive terahertz source (PCA) has been widely used in the terahertz time-domain spectral system (THz-TDS). In the THz-TDS system, the biased PCA is triggered by a femtosecond laser to radiate terahertz waves to free space due to the accelerated motion of photogenerated carriers under the bias electric field, and a pulse current is formed in the PCA bias loop. Generally, the circuit that loads bias voltage to PCA has different circuit designs, so there is inevitably a specific inductance in the base circuit of PCA mounting. The electromagnetic inertia caused by this will significantly affect the pulse width of the current in the circuit. The pulse width of the current pulse will be widened with the increase of the circuit inductance. Therefore, whether the inductance of The PCA circuit will affect the character of the THz wave radiated from PCA to free space is a problem faced by the circuit design based on PCA. In this paper, inductance elements with different inductance values are added to the PCA circuit, and the time domain waveform and spectrum of THz wave radiated by PCA are tested experimentally. The results show that the inductance value in the PCA circuit has no noticeable effect on the THz wave released by PCA, thus providing an experimental basis for designing the THz PCA substrate circuit applied on different occasions.","PeriodicalId":258680,"journal":{"name":"Earth and Space From Infrared to Terahertz (ESIT 2022)","volume":"106 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-01-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116366143","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Chengyao Peng, Shun Bai, Xiaohua Jiang, Wenbing Zhang, Min Hu, Fukun Liu
We developed a terahertz scattering-type scanning near-field optical microscopy (THz s-SNOW) to perform imaging tests on the acrosome of sperm. Test results show that the morphology of the whole sperm head could be clearly observed, as well as the outline of the sperm acrosome, which has a clear boundary with the nucleus.
{"title":"Observation of human sperm acrosome based on near-field terahertz imaging technique","authors":"Chengyao Peng, Shun Bai, Xiaohua Jiang, Wenbing Zhang, Min Hu, Fukun Liu","doi":"10.1117/12.2664614","DOIUrl":"https://doi.org/10.1117/12.2664614","url":null,"abstract":"We developed a terahertz scattering-type scanning near-field optical microscopy (THz s-SNOW) to perform imaging tests on the acrosome of sperm. Test results show that the morphology of the whole sperm head could be clearly observed, as well as the outline of the sperm acrosome, which has a clear boundary with the nucleus.","PeriodicalId":258680,"journal":{"name":"Earth and Space From Infrared to Terahertz (ESIT 2022)","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-01-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126702730","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Bisong Tan, Kejun Li, J. Yan, Yu Du, Jia Mao, Tianqing Chen, C. Peng
In this paper, we report the mid-wavelength HgCdTe HOT (High Operating Temperature) detector with 640×512 array and center distance of 15μm by JueXin Microelectronics Co., Ltd. The detector can work steadily when the focal plane array temperature is 140K. We grew up the CdZnTe substrates by vertical Bridgman technique and HgCdTe materials by liquid phase epitaxy process, then the planar n+-on-p diodes were formed by boron ion implantation. Through the optimization of material growth and device fabrication process, the dark current of the device is reduced. At 140K, the cut-off wavelength of the device is 4.7μm, the dark current density reaches 3×10-7A/cm2, and the dark current density of the device is close to that of P-on-N (rule 07). At the focal plane operating temperature of 140K, the operability of the detector can reach more than 99.5%, the NETD is less than 13mK, and the RFPN is less than 0.6mV (close to temporal noise). At the same low temperature, when the operating temperature of the device changes from 80K to 140K, the power consumption of the detector module is reduced by 37% and the cooling time is shortened by 36%.
本文报道了由聚信微电子有限公司研制的640×512阵列、中心距为15μm的中波长HgCdTe HOT (High Operating Temperature，高温工作温度)探测器。当焦平面阵列温度为140K时，探测器可以稳定工作。采用垂直布里奇曼法生长CdZnTe衬底，液相外延法生长HgCdTe材料，然后采用硼离子注入形成平面n+-on-p二极管。通过对材料生长和器件制造工艺的优化，降低了器件的暗电流。在140K时，器件的截止波长为4.7μm，暗电流密度达到3×10-7A/cm2，器件的暗电流密度接近于P-on-N的暗电流密度(规则07)。在焦平面工作温度为140K时，探测器的可操作性可达99.5%以上，NETD小于13mK, RFPN小于0.6mV(接近时间噪声)。在同样的低温下，当器件的工作温度从80K变化到140K时，探测器模块的功耗降低37%，冷却时间缩短36%。
{"title":"A study of HgCdTe HOT MW infrared detector","authors":"Bisong Tan, Kejun Li, J. Yan, Yu Du, Jia Mao, Tianqing Chen, C. Peng","doi":"10.1117/12.2665301","DOIUrl":"https://doi.org/10.1117/12.2665301","url":null,"abstract":"In this paper, we report the mid-wavelength HgCdTe HOT (High Operating Temperature) detector with 640×512 array and center distance of 15μm by JueXin Microelectronics Co., Ltd. The detector can work steadily when the focal plane array temperature is 140K. We grew up the CdZnTe substrates by vertical Bridgman technique and HgCdTe materials by liquid phase epitaxy process, then the planar n+-on-p diodes were formed by boron ion implantation. Through the optimization of material growth and device fabrication process, the dark current of the device is reduced. At 140K, the cut-off wavelength of the device is 4.7μm, the dark current density reaches 3×10-7A/cm2, and the dark current density of the device is close to that of P-on-N (rule 07). At the focal plane operating temperature of 140K, the operability of the detector can reach more than 99.5%, the NETD is less than 13mK, and the RFPN is less than 0.6mV (close to temporal noise). At the same low temperature, when the operating temperature of the device changes from 80K to 140K, the power consumption of the detector module is reduced by 37% and the cooling time is shortened by 36%.","PeriodicalId":258680,"journal":{"name":"Earth and Space From Infrared to Terahertz (ESIT 2022)","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-01-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126523656","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Huijun Guo, Liao Yang, Chuan Shen, Hao Xie, Dan Yang, Liqi Zhu, Quanzhi Sun, Chun Lin, Lu Chen, R. Ding, Li He
HgCdTe has been shown to be the first semiconductor exhibiting single-carrier multiplication in short-wavelength, medium-wavelength, long-wavelength avalanche photodiodes detectors for cut-off wavelengths from 1.3 µm to 11 µm corresponding to compositions xcd from 0.7 to 0.2, which has the remarkable characteristics of high gain, high bandwidth and almost no excess noise. These results have opened a new horizon in photon starved and high-speed applications, such as active imaging and free space optical communications. In this paper, we report the latest results at SITP of HgCdTe eFAPDs using LPE-grown absorption layers in the SW and MW wavelength bands. The gain of single element short-wavelength HgCdTe APD for 2.57 μm cut-off wavelength is about 100 at 25V reverse bias, and GNDCD is about 1.47×10- 7A/cm2 at gain of 100 at 130K. For MW HgCdTe APDs, increase the P region doping concentration will reduce the overall dark current density and eliminate sudden rise of dark current at large bias and high temperature, and lower Cd composition could be a trade-off way for GNDCD suppression. 50 μm pitch 128×128 array HgCdTe APDs for cut-off wavelengths 4.88 µm corresponding to compositions xcd 0.307 were fabricated, whose GNDCD is less than 1×10-7A/cm2 at 8V reverse bias, gain is over 1000 at 11V reverse bias. A 50 μm pitch 128×128 array HgCdTe APDs with xcd=0.29 was manufactured, whose gain reaches 1570 at 9.8V reverse bias, the average excess noise factor is 1.25 at average gain of 133, noise equivalent photon is about 12 at average gain of 113. By thinning the absorption region thickness, the response bandwidth of Hg0.79Cd0.31Te APD reaches 635MHz under 1V reverse bias. Moreover, the medium-wavelength focal plane of 320×256 array is demonstrated the imaging, and the low noise, high sensitivity and fast imaging characteristics of HgCdTe APDs under linear avalanche gain are verified.
{"title":"Developments and characterization of HgCdTe e-APDs at SITP","authors":"Huijun Guo, Liao Yang, Chuan Shen, Hao Xie, Dan Yang, Liqi Zhu, Quanzhi Sun, Chun Lin, Lu Chen, R. Ding, Li He","doi":"10.1117/12.2665280","DOIUrl":"https://doi.org/10.1117/12.2665280","url":null,"abstract":"HgCdTe has been shown to be the first semiconductor exhibiting single-carrier multiplication in short-wavelength, medium-wavelength, long-wavelength avalanche photodiodes detectors for cut-off wavelengths from 1.3 µm to 11 µm corresponding to compositions xcd from 0.7 to 0.2, which has the remarkable characteristics of high gain, high bandwidth and almost no excess noise. These results have opened a new horizon in photon starved and high-speed applications, such as active imaging and free space optical communications. In this paper, we report the latest results at SITP of HgCdTe eFAPDs using LPE-grown absorption layers in the SW and MW wavelength bands. The gain of single element short-wavelength HgCdTe APD for 2.57 μm cut-off wavelength is about 100 at 25V reverse bias, and GNDCD is about 1.47×10- 7A/cm2 at gain of 100 at 130K. For MW HgCdTe APDs, increase the P region doping concentration will reduce the overall dark current density and eliminate sudden rise of dark current at large bias and high temperature, and lower Cd composition could be a trade-off way for GNDCD suppression. 50 μm pitch 128×128 array HgCdTe APDs for cut-off wavelengths 4.88 µm corresponding to compositions xcd 0.307 were fabricated, whose GNDCD is less than 1×10-7A/cm2 at 8V reverse bias, gain is over 1000 at 11V reverse bias. A 50 μm pitch 128×128 array HgCdTe APDs with xcd=0.29 was manufactured, whose gain reaches 1570 at 9.8V reverse bias, the average excess noise factor is 1.25 at average gain of 133, noise equivalent photon is about 12 at average gain of 113. By thinning the absorption region thickness, the response bandwidth of Hg0.79Cd0.31Te APD reaches 635MHz under 1V reverse bias. Moreover, the medium-wavelength focal plane of 320×256 array is demonstrated the imaging, and the low noise, high sensitivity and fast imaging characteristics of HgCdTe APDs under linear avalanche gain are verified.","PeriodicalId":258680,"journal":{"name":"Earth and Space From Infrared to Terahertz (ESIT 2022)","volume":"261 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-01-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132328142","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Bosi Wang, Yuping Zhang, L. Tang, G. Deng, K. Teng, Gang Wu, Liyuan Song
Silicon (Si) based photodetectors have been widely used in numerous applications due to their low-cost, high efficiency and good process compatibility. In this paper, a photodetector based on Si mesa heterojunction is reported. Si was doped by ion implantation and used to fabricate a photodetector. The conditions of ion implantation were simulated using a software to obtain the required process parameters before the commencement of the implantation process. The process involved deposition of 100 nm SiO2 film on to the Si substrate, and B ions were injected with 160 keV energy, 6×1014 cm-2 injection dose and at 7° dip angle. After ion implantation, the material was annealed at 900 ℃ for 30 min to repair crystal damages and activate the impurity level. Subsequently, a Si-based mesa heterojunction photodetector was fabricated using a series of standard processes. The photosensitive area of each device unit was 2.04 × 10-2 mm2 . The responsivity of the photodetector in the near ultraviolet and visible bands was more than 0.14 A/W under the bias of -2V. The responsivity of the device was measured using a 1073 K blackbody source, and the voltage responsivity of the blackbody was 1.35×102 V/W. Results from the C-V measurements revealed that the Si has a carrier concentration in the order of 1019 cm-3, which is in good agreement with the simulated results. The experimental results showed that ion implantation has an important effect on the electronic properties of the material and can greatly improve the photoelectric properties of devices.
{"title":"Silicon based mesa heterojunction photodetector","authors":"Bosi Wang, Yuping Zhang, L. Tang, G. Deng, K. Teng, Gang Wu, Liyuan Song","doi":"10.1117/12.2665258","DOIUrl":"https://doi.org/10.1117/12.2665258","url":null,"abstract":"Silicon (Si) based photodetectors have been widely used in numerous applications due to their low-cost, high efficiency and good process compatibility. In this paper, a photodetector based on Si mesa heterojunction is reported. Si was doped by ion implantation and used to fabricate a photodetector. The conditions of ion implantation were simulated using a software to obtain the required process parameters before the commencement of the implantation process. The process involved deposition of 100 nm SiO2 film on to the Si substrate, and B ions were injected with 160 keV energy, 6×1014 cm-2 injection dose and at 7° dip angle. After ion implantation, the material was annealed at 900 ℃ for 30 min to repair crystal damages and activate the impurity level. Subsequently, a Si-based mesa heterojunction photodetector was fabricated using a series of standard processes. The photosensitive area of each device unit was 2.04 × 10-2 mm2 . The responsivity of the photodetector in the near ultraviolet and visible bands was more than 0.14 A/W under the bias of -2V. The responsivity of the device was measured using a 1073 K blackbody source, and the voltage responsivity of the blackbody was 1.35×102 V/W. Results from the C-V measurements revealed that the Si has a carrier concentration in the order of 1019 cm-3, which is in good agreement with the simulated results. The experimental results showed that ion implantation has an important effect on the electronic properties of the material and can greatly improve the photoelectric properties of devices.","PeriodicalId":258680,"journal":{"name":"Earth and Space From Infrared to Terahertz (ESIT 2022)","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-01-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127392508","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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