Pub Date : 2003-06-29DOI: 10.1109/ICTON.2003.1263157
C. Kaczmarek
In the paper the results of analysis are presented, of ultrashort pulse propagation in a highly birefringent optical fiber. For the description of soliton propagation the Coupled Nonlinear Schrodinger equations were applied, which were solved numerically using the Split-Step Fourier Method. The analysis was performed for a lossless optical fiber.
{"title":"The influence of the initial pulse amplitude on the stability of solitons in a highly birefringent optical fiber","authors":"C. Kaczmarek","doi":"10.1109/ICTON.2003.1263157","DOIUrl":"https://doi.org/10.1109/ICTON.2003.1263157","url":null,"abstract":"In the paper the results of analysis are presented, of ultrashort pulse propagation in a highly birefringent optical fiber. For the description of soliton propagation the Coupled Nonlinear Schrodinger equations were applied, which were solved numerically using the Split-Step Fourier Method. The analysis was performed for a lossless optical fiber.","PeriodicalId":272700,"journal":{"name":"Proceedings of 2003 5th International Conference on Transparent Optical Networks, 2003.","volume":"777 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-06-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134513198","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-06-29DOI: 10.1109/ICTON.2003.1264621
P. Debernardi, H. Unold, J. Maehnss, R. Michalzik, G. Bava, K.J. Ebelin
Polarization control in vertical-cavity surface-emitting lasers (VCSELs) has attracted a lot of interest and different techniques have been proposed to achieve it. Among them, one of the most attractive relies on slight modifications of existing and well behaving devices, i.e. by introducing a non-circular transverse layer section somewhere in the device. Even though experimental verifications. of this principle have already been carried out, a theoretical framework to better understand and possibly optimize such devices is still missing. This mainly originates from the need of a fully vectorial and three-dimensional approach. In this paper we will undertake a joint experimental and theoretical effort: first we give experimental evidence of polarization control by applying elliptical surface etching. Then, after having validated the vectorial electromagnetic model by comparing numerical and experimental results, we are able to better explain the polarization selection mechanisms and consequently to provide suggestions for optimized structures.
{"title":"A model tool for single polarization VCSEL design","authors":"P. Debernardi, H. Unold, J. Maehnss, R. Michalzik, G. Bava, K.J. Ebelin","doi":"10.1109/ICTON.2003.1264621","DOIUrl":"https://doi.org/10.1109/ICTON.2003.1264621","url":null,"abstract":"Polarization control in vertical-cavity surface-emitting lasers (VCSELs) has attracted a lot of interest and different techniques have been proposed to achieve it. Among them, one of the most attractive relies on slight modifications of existing and well behaving devices, i.e. by introducing a non-circular transverse layer section somewhere in the device. Even though experimental verifications. of this principle have already been carried out, a theoretical framework to better understand and possibly optimize such devices is still missing. This mainly originates from the need of a fully vectorial and three-dimensional approach. In this paper we will undertake a joint experimental and theoretical effort: first we give experimental evidence of polarization control by applying elliptical surface etching. Then, after having validated the vectorial electromagnetic model by comparing numerical and experimental results, we are able to better explain the polarization selection mechanisms and consequently to provide suggestions for optimized structures.","PeriodicalId":272700,"journal":{"name":"Proceedings of 2003 5th International Conference on Transparent Optical Networks, 2003.","volume":"85 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-06-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116665035","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-06-29DOI: 10.1109/ICTON.2003.1264628
A. Antończak, K. Gąsior, K. Abramski
Potassium titanyl phosphate KTP (KTiOPO/sub 4/) is a material that is being widely used for second-harmonic generation of Nd/sup 3+/- based lasers. The nonlinear crystal is also very good electrooptical modulator. The heterodyne setup based on two microchip Nd:YVO/sub 4//KTP 532nm lasers was build. We demonstrate quite effective frequency control and modulation on the green light.
{"title":"Optical FM in Nd:YVO/sub 4//KTP microchip lasers","authors":"A. Antończak, K. Gąsior, K. Abramski","doi":"10.1109/ICTON.2003.1264628","DOIUrl":"https://doi.org/10.1109/ICTON.2003.1264628","url":null,"abstract":"Potassium titanyl phosphate KTP (KTiOPO/sub 4/) is a material that is being widely used for second-harmonic generation of Nd/sup 3+/- based lasers. The nonlinear crystal is also very good electrooptical modulator. The heterodyne setup based on two microchip Nd:YVO/sub 4//KTP 532nm lasers was build. We demonstrate quite effective frequency control and modulation on the green light.","PeriodicalId":272700,"journal":{"name":"Proceedings of 2003 5th International Conference on Transparent Optical Networks, 2003.","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-06-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125699255","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-06-29DOI: 10.1109/ICTON.2003.1264630
V. Tolmachev, T. Perova, E. Astrova, R. Moore
Using wet anisotropic etching of [110] Si a number of periodically grooved Si structures with lattice constant, A, ranging from 3 to 16 /spl mu/m have been designed and fabricated. A number of structures with different type of "defects" have also been designed and fabricated. These structures with high contrast in refractive index (n/sub si//n/sub air/ = 3.42/1) not only possess a wide main band gap for the photons, but also have reasonably wide secondary stop bands at shorter wavelengths. The IR reflectance spectra for such structures simulated using the method of characteristic matrix showed good agreement with the experimental data. Based on these calculations a "gap map" was produced for periodically grooved Si acting as a 1D photonic crystal.
{"title":"Photonic band gap structures based on periodically grooved silicon","authors":"V. Tolmachev, T. Perova, E. Astrova, R. Moore","doi":"10.1109/ICTON.2003.1264630","DOIUrl":"https://doi.org/10.1109/ICTON.2003.1264630","url":null,"abstract":"Using wet anisotropic etching of [110] Si a number of periodically grooved Si structures with lattice constant, A, ranging from 3 to 16 /spl mu/m have been designed and fabricated. A number of structures with different type of \"defects\" have also been designed and fabricated. These structures with high contrast in refractive index (n/sub si//n/sub air/ = 3.42/1) not only possess a wide main band gap for the photons, but also have reasonably wide secondary stop bands at shorter wavelengths. The IR reflectance spectra for such structures simulated using the method of characteristic matrix showed good agreement with the experimental data. Based on these calculations a \"gap map\" was produced for periodically grooved Si acting as a 1D photonic crystal.","PeriodicalId":272700,"journal":{"name":"Proceedings of 2003 5th International Conference on Transparent Optical Networks, 2003.","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-06-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125458035","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-06-29DOI: 10.1109/ICTON.2003.1264647
Dmitrii Ushakov, V. Kononenko, M. Marciniak
Optical properties of n-i-p-i superlattices embedded into a band-gap material are studied. Transmission and reflection spectra at the near infra-red range and the light intensity distribution inside the structure are investigated. Self-consistent calculations of the transmission and reflection spectra have been performed using the transfer-matrix method and with taking into account the gain saturation. Bistability effects which can be exhibited in photonic crystal heterostructure amplifiers are predicted.
{"title":"Nonlinear optical effects in one-dimensional photonic crystal heterostructure amplifiers","authors":"Dmitrii Ushakov, V. Kononenko, M. Marciniak","doi":"10.1109/ICTON.2003.1264647","DOIUrl":"https://doi.org/10.1109/ICTON.2003.1264647","url":null,"abstract":"Optical properties of n-i-p-i superlattices embedded into a band-gap material are studied. Transmission and reflection spectra at the near infra-red range and the light intensity distribution inside the structure are investigated. Self-consistent calculations of the transmission and reflection spectra have been performed using the transfer-matrix method and with taking into account the gain saturation. Bistability effects which can be exhibited in photonic crystal heterostructure amplifiers are predicted.","PeriodicalId":272700,"journal":{"name":"Proceedings of 2003 5th International Conference on Transparent Optical Networks, 2003.","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-06-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123975441","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-06-29DOI: 10.1109/ICTON.2003.1264640
V.F. Dryakhlushin, A. Klimov, V. V. Rogov, N.V. Vostokov
A method of contact scanning near-field optical lithography has been developed to enable fabrication of elements with characteristic dimensions of about 30 - 50 nanometres. The method involves deposition of a thin-layer polymer-metal coating, photothermal nonplastic deformation of top metal layer with a probe microscope, the transfer of the pattern through the polymer of dry etching and the formation of various nanoelements through this prepared mask. The method is applicable to any materials (metal, dielectric, light/heavy doped semiconductors) relevant to the formation of different nanometre objects (metal, dielectric, etched in surface or its combinations) on their surface.
{"title":"Method of the near-field optical nanolithography using tapered optical fiber","authors":"V.F. Dryakhlushin, A. Klimov, V. V. Rogov, N.V. Vostokov","doi":"10.1109/ICTON.2003.1264640","DOIUrl":"https://doi.org/10.1109/ICTON.2003.1264640","url":null,"abstract":"A method of contact scanning near-field optical lithography has been developed to enable fabrication of elements with characteristic dimensions of about 30 - 50 nanometres. The method involves deposition of a thin-layer polymer-metal coating, photothermal nonplastic deformation of top metal layer with a probe microscope, the transfer of the pattern through the polymer of dry etching and the formation of various nanoelements through this prepared mask. The method is applicable to any materials (metal, dielectric, light/heavy doped semiconductors) relevant to the formation of different nanometre objects (metal, dielectric, etched in surface or its combinations) on their surface.","PeriodicalId":272700,"journal":{"name":"Proceedings of 2003 5th International Conference on Transparent Optical Networks, 2003.","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-06-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127457137","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-06-29DOI: 10.1109/ICTON.2003.1263140
T. Maggipinto, M. Brambilla, L. Columbo
We consider a nonlinear ring cavity resonator filled by a saturable absorber and driven by a plane wave field. Under the slowly varying envelope and paraxial approximation, we introduce a quite general approach to the analysis of the spatio-termporal dynamics of the coherent field beyond the mean-field limit, fully taking into account propagation, diffraction and the boundary conditions imposed by the cavity. We study the stability of the stationary solutions versus spatially modulated perturbations, and identify regimes where we observe total radiation confinement and the formation of 3D localised bright structures. At difference from freely propagating light bullets, here the self-organization proceeds from the combination of diffraction, nonlinearity and resonator feedback. Such cavity light bullets (CLBs) endlessly travel the cavity roundtrip and can be independently manipulated. These characteristics makes CLBs natural candidates for optical bits and for particle-like optical probes.
{"title":"3D cavity light bullets in a nonlinear optical resonator","authors":"T. Maggipinto, M. Brambilla, L. Columbo","doi":"10.1109/ICTON.2003.1263140","DOIUrl":"https://doi.org/10.1109/ICTON.2003.1263140","url":null,"abstract":"We consider a nonlinear ring cavity resonator filled by a saturable absorber and driven by a plane wave field. Under the slowly varying envelope and paraxial approximation, we introduce a quite general approach to the analysis of the spatio-termporal dynamics of the coherent field beyond the mean-field limit, fully taking into account propagation, diffraction and the boundary conditions imposed by the cavity. We study the stability of the stationary solutions versus spatially modulated perturbations, and identify regimes where we observe total radiation confinement and the formation of 3D localised bright structures. At difference from freely propagating light bullets, here the self-organization proceeds from the combination of diffraction, nonlinearity and resonator feedback. Such cavity light bullets (CLBs) endlessly travel the cavity roundtrip and can be independently manipulated. These characteristics makes CLBs natural candidates for optical bits and for particle-like optical probes.","PeriodicalId":272700,"journal":{"name":"Proceedings of 2003 5th International Conference on Transparent Optical Networks, 2003.","volume":"62 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-06-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126288103","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-06-29DOI: 10.1109/ICTON.2003.1263161
Z. Lakatos
Due to the advances in optical component technology and the desired integration of the technological network layers, more significant professional attention is being paid to the concept and the emerging technology of automatically switched optical networks (ASON). The intelligent switching capabilities enable more dynamic networking, which may change the network characteristics significantly. The study of these changing characteristics is required in order to provide a firm basis for strategic network development decisions. After a brief overview of the ASON technology, the paper illustrates the potential advantages and drawbacks due to the dynamic behavior of the optical network. The analysis of numerical results from small network examples helps to highlight the main networking features of dynamic provisioning of optical channels. Based on the results of network simulations, a comparison of semi-permanent and switched connection based services is performed, taking into account different source activities. Finally, a quantitative analysis is given of the expected network resource savings originating from the statistical gains of automatic switching.
{"title":"Design of automatically switched optical networks","authors":"Z. Lakatos","doi":"10.1109/ICTON.2003.1263161","DOIUrl":"https://doi.org/10.1109/ICTON.2003.1263161","url":null,"abstract":"Due to the advances in optical component technology and the desired integration of the technological network layers, more significant professional attention is being paid to the concept and the emerging technology of automatically switched optical networks (ASON). The intelligent switching capabilities enable more dynamic networking, which may change the network characteristics significantly. The study of these changing characteristics is required in order to provide a firm basis for strategic network development decisions. After a brief overview of the ASON technology, the paper illustrates the potential advantages and drawbacks due to the dynamic behavior of the optical network. The analysis of numerical results from small network examples helps to highlight the main networking features of dynamic provisioning of optical channels. Based on the results of network simulations, a comparison of semi-permanent and switched connection based services is performed, taking into account different source activities. Finally, a quantitative analysis is given of the expected network resource savings originating from the statistical gains of automatic switching.","PeriodicalId":272700,"journal":{"name":"Proceedings of 2003 5th International Conference on Transparent Optical Networks, 2003.","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-06-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121247921","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-06-29DOI: 10.1109/ICTON.2003.1263152
K. Gaikovich, V.F. Dryakhlushin
Results of the study a thin near-field structure of the semiconductor laser emission using nearfield optical microscopy (SNOM) are presented. Significant enhancement of resolution is achieved by deconvolution of measured 2-D images using Tikhonov's method. It made possible to detect the true nano-scale structure of inhomogeneities of a semiconductor laser emission.
{"title":"Scanning microscopy of near-field emission of semiconductor laser","authors":"K. Gaikovich, V.F. Dryakhlushin","doi":"10.1109/ICTON.2003.1263152","DOIUrl":"https://doi.org/10.1109/ICTON.2003.1263152","url":null,"abstract":"Results of the study a thin near-field structure of the semiconductor laser emission using nearfield optical microscopy (SNOM) are presented. Significant enhancement of resolution is achieved by deconvolution of measured 2-D images using Tikhonov's method. It made possible to detect the true nano-scale structure of inhomogeneities of a semiconductor laser emission.","PeriodicalId":272700,"journal":{"name":"Proceedings of 2003 5th International Conference on Transparent Optical Networks, 2003.","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-06-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122710488","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-06-29DOI: 10.1109/ICTON.2003.1264649
C. Grigorescu, H. Lee, U.D. Lanke, A. Koo, B. Ruck, O. Monnereau, R. Notonier, A. Tonetto, H. Trodahl
The effects of thermal annealing on structural and optical properties of amorphous GaN thin films obtained by Ion Assisted Deposition (IAD) have been investigated. Thermal annealing. was carried out in flowing nitrogen and respectively under water vapour pressure (1.7-2.4 torr), at temperatures up to 800/spl deg/C. From SEM observations of the annealing processes in real time it appears that formation of nano-crystallites in the amorphous environment occurs at about 400/spl deg/C. XRD and Raman scattering performed on the annealed films prove the presence of nano-crystallites (2-4 nm). Optical measurements show a weak absorption edge in the as prepared film, and the deepening edge and reduced sub-band absorption after annealing.
{"title":"Annealing amorphous GaN - a way to nano-crystalline state","authors":"C. Grigorescu, H. Lee, U.D. Lanke, A. Koo, B. Ruck, O. Monnereau, R. Notonier, A. Tonetto, H. Trodahl","doi":"10.1109/ICTON.2003.1264649","DOIUrl":"https://doi.org/10.1109/ICTON.2003.1264649","url":null,"abstract":"The effects of thermal annealing on structural and optical properties of amorphous GaN thin films obtained by Ion Assisted Deposition (IAD) have been investigated. Thermal annealing. was carried out in flowing nitrogen and respectively under water vapour pressure (1.7-2.4 torr), at temperatures up to 800/spl deg/C. From SEM observations of the annealing processes in real time it appears that formation of nano-crystallites in the amorphous environment occurs at about 400/spl deg/C. XRD and Raman scattering performed on the annealed films prove the presence of nano-crystallites (2-4 nm). Optical measurements show a weak absorption edge in the as prepared film, and the deepening edge and reduced sub-band absorption after annealing.","PeriodicalId":272700,"journal":{"name":"Proceedings of 2003 5th International Conference on Transparent Optical Networks, 2003.","volume":"31 8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-06-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122807226","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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