Ternary-type semiconductor chalcogenide materials are distinguished by their outstanding thermal performance and tunable optoelectronic features. The electronic structure, optical, and transport features of novel Zn2SeX ternary (X=S, Te) semiconductors are investigated by employing the widely used density functional theory. Based on the band structure investigation, these materials were anticipated to have a direct energy gap. The results demonstrated that direct energy losses were caused by the orbitals hybridization of S-p and the Se/Te-d in both materials. Compared to Zn2SeTe, Zn2SeS has a wider band gap at the Γ-point, meaning that electrons will have a lower effective mass and atoms possess a greater effective mass. The elements of the complex dielectric function and the significant optical properties were explored for potential use in optoelectronic applications. The unique peaks in I(ω) confirm extensive absorption in the UV range. They may be employed as very effective ultraviolet-reflecting materials based on the peaks in the reflection spectrum that have been observed. Since both materials positive Seebeck coefficient display p-type conductivity over the whole temperature range.