Pub Date : 2011-06-05DOI: 10.1109/MWSYM.2011.5972619
Y. Uemichi, H. Hatakeyama, T. Aizawa, K. Okada, H. Kiumarsi, S. Tanoi, N. Ishihara, K. Masu
We designed and fabricated low-loss and compact microstrip line and Marchand balun composed of thick Cu and thick resin on Si substrate for millimeter-wave applications. An attenuation constant α and Q of the fabricated microstrip line are 0.17 dB/mm and 52 at 60GHz, respectively. The insertion loss and the core size of the fabricated balun are 0.6 dB at 60 GHz and 300 µm × 450 µm, respectively, which are the lowest and the smallest among the millimeter-wave baluns ever reported, to our knowledge.
{"title":"Low-loss and compact millimeter-wave balun on Si","authors":"Y. Uemichi, H. Hatakeyama, T. Aizawa, K. Okada, H. Kiumarsi, S. Tanoi, N. Ishihara, K. Masu","doi":"10.1109/MWSYM.2011.5972619","DOIUrl":"https://doi.org/10.1109/MWSYM.2011.5972619","url":null,"abstract":"We designed and fabricated low-loss and compact microstrip line and Marchand balun composed of thick Cu and thick resin on Si substrate for millimeter-wave applications. An attenuation constant α and Q of the fabricated microstrip line are 0.17 dB/mm and 52 at 60GHz, respectively. The insertion loss and the core size of the fabricated balun are 0.6 dB at 60 GHz and 300 µm × 450 µm, respectively, which are the lowest and the smallest among the millimeter-wave baluns ever reported, to our knowledge.","PeriodicalId":294862,"journal":{"name":"2011 IEEE MTT-S International Microwave Symposium","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131593526","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-06-05DOI: 10.1109/MWSYM.2011.5972564
M. van der Heijden, M. Acar, Jan S. Vromans, D. A. Calvillo-Cortes
A class-E Chireix outphasing power amplifier is presented that enables high efficiency across a wide power back-off range and RF bandwidth. In this design the Chireix compensation elements and class-E loading conditions are provided by an asymmetric coupled-line power combiner. The class-E operated GaN HEMT switches are driven by high-speed, high-voltage CMOS drivers, implemented in a standard 65nm process technology. The proposed concept demonstrates 51.6% system average power efficiency and 65.1% average drain efficiency for a 7.5dB PAR WCDMA signal at 1.95GHz, while meeting the ACLR specifications. Moreover, the PA demonstrated more than 60% drain efficiency across a 6dB power back-off range and up to 19W peak power between 1800–2050MHz.
提出了一种e类Chireix型共相功率放大器，该放大器在较宽的功率回退范围和射频带宽下具有较高的效率。在本设计中，Chireix补偿元件和e类负载条件由非对称耦合线功率合成器提供。e级操作GaN HEMT开关由高速高压CMOS驱动器驱动，采用标准65nm工艺技术实现。提出的概念在1.95GHz的7.5dB PAR WCDMA信号下，系统平均功率效率为51.6%，平均漏极效率为65.1%，同时满足ACLR规范。此外，在1800-2050MHz之间的6dB功率回退范围内，PA的漏极效率超过60%，峰值功率高达19W。
{"title":"A 19W high-efficiency wide-band CMOS-GaN class-E Chireix RF outphasing power amplifier","authors":"M. van der Heijden, M. Acar, Jan S. Vromans, D. A. Calvillo-Cortes","doi":"10.1109/MWSYM.2011.5972564","DOIUrl":"https://doi.org/10.1109/MWSYM.2011.5972564","url":null,"abstract":"A class-E Chireix outphasing power amplifier is presented that enables high efficiency across a wide power back-off range and RF bandwidth. In this design the Chireix compensation elements and class-E loading conditions are provided by an asymmetric coupled-line power combiner. The class-E operated GaN HEMT switches are driven by high-speed, high-voltage CMOS drivers, implemented in a standard 65nm process technology. The proposed concept demonstrates 51.6% system average power efficiency and 65.1% average drain efficiency for a 7.5dB PAR WCDMA signal at 1.95GHz, while meeting the ACLR specifications. Moreover, the PA demonstrated more than 60% drain efficiency across a 6dB power back-off range and up to 19W peak power between 1800–2050MHz.","PeriodicalId":294862,"journal":{"name":"2011 IEEE MTT-S International Microwave Symposium","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134445948","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-06-05DOI: 10.1109/MWSYM.2011.5972963
A. Georgiadis, A. Collado, S. Via, Cesar Meneses
A flexible electromagnetic (EM) / solar energy harvester is proposed that finds application in low power energy autonomous wireless sensor networks and RFID-enabled sensors. A low cost, compact and conformal harvester is implemented on a flexible polyester (PET) substrate combining a rectenna for EM harvesting and a flexible amorphous silicon solar cell for solar energy harvesting. A compact design is achieved by placing the solar cell on top of the radiating element. A coplanar UWB monopole antenna is designed and a rectifying network is optimized using harmonic balance in order to maximize the rectenna efficiency for low power electromagnetic signals in the GSM-850 and GSM-1900 frequency bands. The solar cell is integrated on the surface of the UWB antenna and electromagnetic simulation is used to optimize its location and the required DC interconnects in order to minimize the performance degradation of the antenna. Measured results of the performance of the hybrid energy harvester are presented showing good agreement with simulation.
{"title":"Flexible hybrid solar/EM energy harvester for autonomous sensors","authors":"A. Georgiadis, A. Collado, S. Via, Cesar Meneses","doi":"10.1109/MWSYM.2011.5972963","DOIUrl":"https://doi.org/10.1109/MWSYM.2011.5972963","url":null,"abstract":"A flexible electromagnetic (EM) / solar energy harvester is proposed that finds application in low power energy autonomous wireless sensor networks and RFID-enabled sensors. A low cost, compact and conformal harvester is implemented on a flexible polyester (PET) substrate combining a rectenna for EM harvesting and a flexible amorphous silicon solar cell for solar energy harvesting. A compact design is achieved by placing the solar cell on top of the radiating element. A coplanar UWB monopole antenna is designed and a rectifying network is optimized using harmonic balance in order to maximize the rectenna efficiency for low power electromagnetic signals in the GSM-850 and GSM-1900 frequency bands. The solar cell is integrated on the surface of the UWB antenna and electromagnetic simulation is used to optimize its location and the required DC interconnects in order to minimize the performance degradation of the antenna. Measured results of the performance of the hybrid energy harvester are presented showing good agreement with simulation.","PeriodicalId":294862,"journal":{"name":"2011 IEEE MTT-S International Microwave Symposium","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134569071","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-06-05DOI: 10.1109/MWSYM.2011.5972695
W. Hong
In this paper, the history of millimeter wave and THz research and applications in China and the current projects supported by China government related to millimeter wave and THz communications are briefly reviewed, some typical achievements in millimeter wave and THz components, systems and integrated circuits from some universities and institutes in China are introduced.
{"title":"Millimeter wave and THz communications in China","authors":"W. Hong","doi":"10.1109/MWSYM.2011.5972695","DOIUrl":"https://doi.org/10.1109/MWSYM.2011.5972695","url":null,"abstract":"In this paper, the history of millimeter wave and THz research and applications in China and the current projects supported by China government related to millimeter wave and THz communications are briefly reviewed, some typical achievements in millimeter wave and THz components, systems and integrated circuits from some universities and institutes in China are introduced.","PeriodicalId":294862,"journal":{"name":"2011 IEEE MTT-S International Microwave Symposium","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134604266","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-06-05DOI: 10.1109/MWSYM.2011.5972892
B. Lacroix, J. Papapolymerou
This paper presents the design, fabrication and measurements of a low-loss and compact triple-mode ring resonator filter operating at X-band. This filter is fabricated on a 635-µm thick duroid substrate (εr = 10.2, tan δ = 0.0023). A classical ring resonator topology with a perturbation allows the first mode to split into two degenerate modes while an additional serpentine line in the middle of the ring which also includes a perturbation and a coupling line creates a third mode whose resonance frequency can be tuned towards the two first mode resonances. Therefore, a third-order response filter is achieved. This filter exhibits insertion loss of 1.67–2.07 dB in the [9.5–10.5] GHz frequency range while return loss is better than 14.7 dB. The 1-dB fractional bandwidth is 13.2%. The presented topology allows a footprint size reduction compared to standard filter topologies.
本文介绍了一种工作在x波段的低损耗紧凑型三模环形谐振器滤波器的设计、制作和测量。该滤波器制作在635µm厚的硬质合金衬底上(εr = 10.2, tan δ = 0.0023)。具有微扰的经典环谐振器拓扑允许第一模分裂为两个简并模，而环中间的附加蛇形线也包括微扰和耦合线创建第三模，其共振频率可以调谐到两个第一模共振。因此，实现了三阶响应滤波器。该滤波器在[9.5-10.5]GHz频率范围内的插入损耗为1.67-2.07 dB，而回波损耗优于14.7 dB。1db分数带宽为13.2%。与标准过滤器拓扑相比，所提供的拓扑允许减少内存占用大小。
{"title":"A triple-mode X-band microstrip ring resonator filter","authors":"B. Lacroix, J. Papapolymerou","doi":"10.1109/MWSYM.2011.5972892","DOIUrl":"https://doi.org/10.1109/MWSYM.2011.5972892","url":null,"abstract":"This paper presents the design, fabrication and measurements of a low-loss and compact triple-mode ring resonator filter operating at X-band. This filter is fabricated on a 635-µm thick duroid substrate (εr = 10.2, tan δ = 0.0023). A classical ring resonator topology with a perturbation allows the first mode to split into two degenerate modes while an additional serpentine line in the middle of the ring which also includes a perturbation and a coupling line creates a third mode whose resonance frequency can be tuned towards the two first mode resonances. Therefore, a third-order response filter is achieved. This filter exhibits insertion loss of 1.67–2.07 dB in the [9.5–10.5] GHz frequency range while return loss is better than 14.7 dB. The 1-dB fractional bandwidth is 13.2%. The presented topology allows a footprint size reduction compared to standard filter topologies.","PeriodicalId":294862,"journal":{"name":"2011 IEEE MTT-S International Microwave Symposium","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133061774","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-06-05DOI: 10.1109/MWSYM.2011.5972768
Wei Wang, G. Fischer, Leon van den Oever, C. Korden, R. Weigel
A new linear tapered diplexing power distributed amplifier (DA) based on composite right left handed transmission line (CRLH-TL) has been proposed and implemented. According to the input frequency, the amplified signal is directed to one of the two output ports automatically. The linearity requirement of UMTS and WLAN can be satisfied until different power level, respectively. Furthermore, this circuit is capable of simultaneous amplification of 2 modulated signals, which enables load balancing and spectrum aggregation techniques.
{"title":"Linear tapered diplexing distributed power amplifier for mobile phone application","authors":"Wei Wang, G. Fischer, Leon van den Oever, C. Korden, R. Weigel","doi":"10.1109/MWSYM.2011.5972768","DOIUrl":"https://doi.org/10.1109/MWSYM.2011.5972768","url":null,"abstract":"A new linear tapered diplexing power distributed amplifier (DA) based on composite right left handed transmission line (CRLH-TL) has been proposed and implemented. According to the input frequency, the amplified signal is directed to one of the two output ports automatically. The linearity requirement of UMTS and WLAN can be satisfied until different power level, respectively. Furthermore, this circuit is capable of simultaneous amplification of 2 modulated signals, which enables load balancing and spectrum aggregation techniques.","PeriodicalId":294862,"journal":{"name":"2011 IEEE MTT-S International Microwave Symposium","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133809843","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-06-05DOI: 10.1109/MWSYM.2011.5972764
H. Kayano, T. Kawaguchi, N. Shiokawa, K. Nakayama, M. Yamazaki
We have proposed narrow-band transmitting hybrid filter which puts on the output of the 100kW klystron amplifier for X-band radar application. A transmitting hybrid filter consists of superconducting resonators and conventional cavities. Novel hybrid filter structured with two cascade connections of reflection-type cavities, reflection-type superconducting resonators, and open-stub realizes low power concentration in superconducting resonators. Compatibility of the high power handling capability and the sharp skirt feature is possible by this filter. As a result, power handling capability for the hybrid filter was obtained 100 kW. Also, this filter had fractional bandwidth of 0.055%. Given these features, the transmitting signal with low spurious and the high density carrier frequency assignment for next-generation Radar applications is expected to be realized by applying these filters.
{"title":"Narrow-band superconducting hybrid filter for 100kW transmitter of X-band radar application","authors":"H. Kayano, T. Kawaguchi, N. Shiokawa, K. Nakayama, M. Yamazaki","doi":"10.1109/MWSYM.2011.5972764","DOIUrl":"https://doi.org/10.1109/MWSYM.2011.5972764","url":null,"abstract":"We have proposed narrow-band transmitting hybrid filter which puts on the output of the 100kW klystron amplifier for X-band radar application. A transmitting hybrid filter consists of superconducting resonators and conventional cavities. Novel hybrid filter structured with two cascade connections of reflection-type cavities, reflection-type superconducting resonators, and open-stub realizes low power concentration in superconducting resonators. Compatibility of the high power handling capability and the sharp skirt feature is possible by this filter. As a result, power handling capability for the hybrid filter was obtained 100 kW. Also, this filter had fractional bandwidth of 0.055%. Given these features, the transmitting signal with low spurious and the high density carrier frequency assignment for next-generation Radar applications is expected to be realized by applying these filters.","PeriodicalId":294862,"journal":{"name":"2011 IEEE MTT-S International Microwave Symposium","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115034121","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-06-05DOI: 10.1109/MWSYM.2011.5972753
Binghuai Li, Qi Zhu
First, a method to obtain the equivalent circuit of a dipole consisting of frequency independent lumped elements is presented here. The input impedance of the equivalent circuit is in accordance with that of simulation results of the dipole. Then, based on the equivalent circuit of a single dipole, an equivalent circuit of one row periodic metal rod array is also developed. The passbands of periodic metal rod arrays calculated by the present method agree well with the simulation results and experimental measurements.
{"title":"Equivalent circuits of dipole and periodic metal rod array","authors":"Binghuai Li, Qi Zhu","doi":"10.1109/MWSYM.2011.5972753","DOIUrl":"https://doi.org/10.1109/MWSYM.2011.5972753","url":null,"abstract":"First, a method to obtain the equivalent circuit of a dipole consisting of frequency independent lumped elements is presented here. The input impedance of the equivalent circuit is in accordance with that of simulation results of the dipole. Then, based on the equivalent circuit of a single dipole, an equivalent circuit of one row periodic metal rod array is also developed. The passbands of periodic metal rod arrays calculated by the present method agree well with the simulation results and experimental measurements.","PeriodicalId":294862,"journal":{"name":"2011 IEEE MTT-S International Microwave Symposium","volume":"160 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114176471","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-06-05DOI: 10.1109/MWSYM.2011.5972882
A. Datesman, J. McMahon, L. Bleem, R. Weikle, V. Yefremenko, Gensheng Wang, V. Novosad, C. Chang, A. Crites, J. Mehl, S. Meyer, J. Carlstrom
Bolometer detectors utilizing superconducting transition-edge sensor thermometers represent the current state-of-the-art for millimeter-wave astrophysical applications. These devices are generally designed using computationally-intensive simulation to predict and optimize electromagnetic performance. The design process therefore requires access to expensive software and does not directly offer physical insight regarding why the detector operates as it does. This paper describes a fast, simple, and insightful analytical technique which applies to the design of absorber-coupled waveguide bolometer detectors operating in the micro- and millimeter-wavelength regimes. We provide simple analytical expressions for the detector input impedance, as well as the resistance and width of the dipole-like absorber, and describe a quick iterative method to determine the appropriate absorber length. The analysis is based upon the EMF Method, which provides a strong theoretical basis for understanding detector operation. We also describe experimental results for an absorber-coupled bolometer detector in circular waveguide.
{"title":"Analytical solutions for the design and evaluation of absorber-coupled waveguide bolometer detectors","authors":"A. Datesman, J. McMahon, L. Bleem, R. Weikle, V. Yefremenko, Gensheng Wang, V. Novosad, C. Chang, A. Crites, J. Mehl, S. Meyer, J. Carlstrom","doi":"10.1109/MWSYM.2011.5972882","DOIUrl":"https://doi.org/10.1109/MWSYM.2011.5972882","url":null,"abstract":"Bolometer detectors utilizing superconducting transition-edge sensor thermometers represent the current state-of-the-art for millimeter-wave astrophysical applications. These devices are generally designed using computationally-intensive simulation to predict and optimize electromagnetic performance. The design process therefore requires access to expensive software and does not directly offer physical insight regarding why the detector operates as it does. This paper describes a fast, simple, and insightful analytical technique which applies to the design of absorber-coupled waveguide bolometer detectors operating in the micro- and millimeter-wavelength regimes. We provide simple analytical expressions for the detector input impedance, as well as the resistance and width of the dipole-like absorber, and describe a quick iterative method to determine the appropriate absorber length. The analysis is based upon the EMF Method, which provides a strong theoretical basis for understanding detector operation. We also describe experimental results for an absorber-coupled bolometer detector in circular waveguide.","PeriodicalId":294862,"journal":{"name":"2011 IEEE MTT-S International Microwave Symposium","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114299462","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-06-05DOI: 10.1109/MWSYM.2011.5972660
P. Godoy, SungWon Chung, T. Barton, D. Perreault, J. Dawson
A 1.95-GHz asymmetric multilevel outphasing (AMO) transmitter with class-E GaN power amplifiers (PAs) and discrete supply modulators is presented. AMO transmitters achieve improved efficiency over envelope tracking (ET) transmitters by replacing the continuous supply modulator with a discrete supply modulator implemented with a fast digital switching network. Outphasing modulation is used to provide the required fine output envelope control. A 4-level supply modulator is implemented that allows for fast and efficient discrete envelope modulation with up to 28-V supply voltages using low-voltage gate drivers and time-alignment logic. With two class-E GaN PAs that achieve 62.5% power-added efficiency (PAE) at 40- dBm peak output power, the AMO transmitter delivers 42.6- dBm peak output power at 1.95-GHz. For a 16-QAM signal at 36-dBm output power, the transmitter achieves 44.2/42.8/41.4% average system efficiency and 2.0/2.1/3.1% EVM for 10/20/40-MHz channel bandwidth, respectively.
{"title":"A highly efficient 1.95-GHz, 18-W asymmetric multilevel outphasing transmitter for wideband applications","authors":"P. Godoy, SungWon Chung, T. Barton, D. Perreault, J. Dawson","doi":"10.1109/MWSYM.2011.5972660","DOIUrl":"https://doi.org/10.1109/MWSYM.2011.5972660","url":null,"abstract":"A 1.95-GHz asymmetric multilevel outphasing (AMO) transmitter with class-E GaN power amplifiers (PAs) and discrete supply modulators is presented. AMO transmitters achieve improved efficiency over envelope tracking (ET) transmitters by replacing the continuous supply modulator with a discrete supply modulator implemented with a fast digital switching network. Outphasing modulation is used to provide the required fine output envelope control. A 4-level supply modulator is implemented that allows for fast and efficient discrete envelope modulation with up to 28-V supply voltages using low-voltage gate drivers and time-alignment logic. With two class-E GaN PAs that achieve 62.5% power-added efficiency (PAE) at 40- dBm peak output power, the AMO transmitter delivers 42.6- dBm peak output power at 1.95-GHz. For a 16-QAM signal at 36-dBm output power, the transmitter achieves 44.2/42.8/41.4% average system efficiency and 2.0/2.1/3.1% EVM for 10/20/40-MHz channel bandwidth, respectively.","PeriodicalId":294862,"journal":{"name":"2011 IEEE MTT-S International Microwave Symposium","volume":"176 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114384206","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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