Pub Date : 2011-06-05DOI: 10.1109/MWSYM.2011.5972961
A. Amadjikpe, D. Choudhury, G. Ponchak, J. Papapolymerou
A low-profile, switched-beam, end-fire antenna integrated with a novel microstrip-to-slot transition is presented. The antenna module consists of wire-bonded switch and PA integrated in liquid crystal polymer substrate package. The proposed transition exploits slow-wave techniques to transform a 50 Ω microstrip into a 110 Ω slot mode over 55 to 67+ GHz. The 10 mm × 10 mm active antenna 3 dB beamwidth is 55°/68° (E/H plane) in each switched state with an average 19 dBi peak gain over 55 to 67 GHz.
{"title":"60-GHz switched-beam end-fire antenna module integrated with novel microstrip-to-slot transition","authors":"A. Amadjikpe, D. Choudhury, G. Ponchak, J. Papapolymerou","doi":"10.1109/MWSYM.2011.5972961","DOIUrl":"https://doi.org/10.1109/MWSYM.2011.5972961","url":null,"abstract":"A low-profile, switched-beam, end-fire antenna integrated with a novel microstrip-to-slot transition is presented. The antenna module consists of wire-bonded switch and PA integrated in liquid crystal polymer substrate package. The proposed transition exploits slow-wave techniques to transform a 50 Ω microstrip into a 110 Ω slot mode over 55 to 67+ GHz. The 10 mm × 10 mm active antenna 3 dB beamwidth is 55°/68° (E/H plane) in each switched state with an average 19 dBi peak gain over 55 to 67 GHz.","PeriodicalId":294862,"journal":{"name":"2011 IEEE MTT-S International Microwave Symposium","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126819391","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-06-05DOI: 10.1109/MWSYM.2011.5972922
Songnan Yang, A. Fathy
Substrate integrated waveguides technology has been implemented to develop a compact feed network for a slot antenna array. Various transitions design rules have been developed and implemented including compact “T” and “Y” junctions, layer to layer couplers, and a wide band CPWG to SIW transition. The feed network is optimized to have a low overall insertion loss while supporting the required bandwidth through optimizing the dimension of junctions on each stage.
{"title":"Compact folded feed network development for a ku-band DBS slotted SIW array antennas","authors":"Songnan Yang, A. Fathy","doi":"10.1109/MWSYM.2011.5972922","DOIUrl":"https://doi.org/10.1109/MWSYM.2011.5972922","url":null,"abstract":"Substrate integrated waveguides technology has been implemented to develop a compact feed network for a slot antenna array. Various transitions design rules have been developed and implemented including compact “T” and “Y” junctions, layer to layer couplers, and a wide band CPWG to SIW transition. The feed network is optimized to have a low overall insertion loss while supporting the required bandwidth through optimizing the dimension of junctions on each stage.","PeriodicalId":294862,"journal":{"name":"2011 IEEE MTT-S International Microwave Symposium","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129203472","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-06-05DOI: 10.1109/MWSYM.2011.5973443
Bulent Sen, Mehmet Kayhan, Hakan Boran, N. Bilgin
This paper presents the design and development of a high power S band (2.9–3.3 GHz) Transmit/Receive (T/R) module prototype. The motivation behind this development is to increase reliability and maintainability of modern radar systems by replacing microwave tube amplifiers with solid state counterpart. 1.25kW peak output power with a pulse width of 40 usec at a duty of %10 is achieved by combining 8 pallet amplifiers with a low loss, equal phase rf power combiner. A phase compensation circuit is also adopted to eliminate phase imbalances in the combining architecture. GaN HEMT is chosen as the semiconductor device in each pallet amplifier. The designed and developed GaN pallet amplifier delivers 54 dBm peak power with 8 dB nonlinear power gain.
{"title":"1,25 kW S band pulsed Transmit/Receive module for microwave tube amplifier replacement","authors":"Bulent Sen, Mehmet Kayhan, Hakan Boran, N. Bilgin","doi":"10.1109/MWSYM.2011.5973443","DOIUrl":"https://doi.org/10.1109/MWSYM.2011.5973443","url":null,"abstract":"This paper presents the design and development of a high power S band (2.9–3.3 GHz) Transmit/Receive (T/R) module prototype. The motivation behind this development is to increase reliability and maintainability of modern radar systems by replacing microwave tube amplifiers with solid state counterpart. 1.25kW peak output power with a pulse width of 40 usec at a duty of %10 is achieved by combining 8 pallet amplifiers with a low loss, equal phase rf power combiner. A phase compensation circuit is also adopted to eliminate phase imbalances in the combining architecture. GaN HEMT is chosen as the semiconductor device in each pallet amplifier. The designed and developed GaN pallet amplifier delivers 54 dBm peak power with 8 dB nonlinear power gain.","PeriodicalId":294862,"journal":{"name":"2011 IEEE MTT-S International Microwave Symposium","volume":"51 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124029857","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-06-05DOI: 10.1109/MWSYM.2011.5972904
Jaeyoung Jung, P. Upadyaya, Peng Liu, D. Heo
A power-minimized LC voltage controlled oscillator (VCO) with switched biasing and triode-region MOSFETs has been designed using a 0.18-µm CMOS process. The design strategy for an LC VCO suggested an inductance selection scheme to accommodate the trade-off between power consumption and phase noise. Consuming a current of 680-µA from a 1.2 V power supply, the VCO achieves a measured single-sideband phase noise of −123.2 dBc/Hz at 1 MHz offset frequency and 8 % tuning range. The Figure-Of-Merit with the normalized area of the proposed VCO is −198.2 dB, which is the lowest among the latest state-of-the-art sub-1mW VCOs.
{"title":"Compact sub-1mW low phase noise CMOS LC-VCO based on power reduction technique","authors":"Jaeyoung Jung, P. Upadyaya, Peng Liu, D. Heo","doi":"10.1109/MWSYM.2011.5972904","DOIUrl":"https://doi.org/10.1109/MWSYM.2011.5972904","url":null,"abstract":"A power-minimized LC voltage controlled oscillator (VCO) with switched biasing and triode-region MOSFETs has been designed using a 0.18-µm CMOS process. The design strategy for an LC VCO suggested an inductance selection scheme to accommodate the trade-off between power consumption and phase noise. Consuming a current of 680-µA from a 1.2 V power supply, the VCO achieves a measured single-sideband phase noise of −123.2 dBc/Hz at 1 MHz offset frequency and 8 % tuning range. The Figure-Of-Merit with the normalized area of the proposed VCO is −198.2 dB, which is the lowest among the latest state-of-the-art sub-1mW VCOs.","PeriodicalId":294862,"journal":{"name":"2011 IEEE MTT-S International Microwave Symposium","volume":"56 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124034248","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-06-05DOI: 10.1109/MWSYM.2011.5972853
R. De Paolis, S. Pacchini, F. Coccetti, G. Monti, L. Tarricone, M. Tentzeris, R. Plana
This paper proposes an electrical model of carbon-nanotube (CNT) networks, that can be patterned using inkjet transfer printing. The Double-Walled carbon Nanotubes (DWNTs) “inkjet”-able suspension was deposited in gaps of variable lengths cut out of the central line of the coplanar waveguide test structure. The proposed model was validated through measurements of the line input impedance and of the scattering parameters. The obtained results demonstrate that, by acting on the gap size and on the number of CNT ink layers, both the DC resistance and the resonance frequency of the test structure can be selected ad hoc (from tens of kΩ to tens of Ω and from few MHz to tens of MHz, respectively). Therefore, by exploiting the suggested equivalent circuit model, the CNT ink deposition process can be considered as a promising candidate for the design of microelectronic and microwave devices with customized behavior (i.e., variable resistors, matching load networks, filters, and resonators).
{"title":"Circuit model of carbon-nanotube inks for microelectronic and microwave tunable devices","authors":"R. De Paolis, S. Pacchini, F. Coccetti, G. Monti, L. Tarricone, M. Tentzeris, R. Plana","doi":"10.1109/MWSYM.2011.5972853","DOIUrl":"https://doi.org/10.1109/MWSYM.2011.5972853","url":null,"abstract":"This paper proposes an electrical model of carbon-nanotube (CNT) networks, that can be patterned using inkjet transfer printing. The Double-Walled carbon Nanotubes (DWNTs) “inkjet”-able suspension was deposited in gaps of variable lengths cut out of the central line of the coplanar waveguide test structure. The proposed model was validated through measurements of the line input impedance and of the scattering parameters. The obtained results demonstrate that, by acting on the gap size and on the number of CNT ink layers, both the DC resistance and the resonance frequency of the test structure can be selected ad hoc (from tens of kΩ to tens of Ω and from few MHz to tens of MHz, respectively). Therefore, by exploiting the suggested equivalent circuit model, the CNT ink deposition process can be considered as a promising candidate for the design of microelectronic and microwave devices with customized behavior (i.e., variable resistors, matching load networks, filters, and resonators).","PeriodicalId":294862,"journal":{"name":"2011 IEEE MTT-S International Microwave Symposium","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120892454","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-06-05DOI: 10.1109/MWSYM.2011.5972819
D. Bruch, F. Schafer, M. Seelmann-Eggebert, B. Aja, I. Kallfass, A. Leuther, M. Schlechtweg, O. Ambacher
This paper presents the design and performance of a single chip broadband noise source dedicated for on-chip measurements in a cryogenic environment. The noise source is used to generate the two input noise powers Pc and Ph which are required by the commonly used Y-factor method. High accuracy in temperature control and impedance presented to the device under test is achieved over a wide temperature range from 7 K to 100 K. Noise temperature measurements of a cryogenic low noise amplifier were performed on-chip and show a typical accuracy of ±1 K.
{"title":"A single chip broadband noise source for noise measurements at cryogenic temperatures","authors":"D. Bruch, F. Schafer, M. Seelmann-Eggebert, B. Aja, I. Kallfass, A. Leuther, M. Schlechtweg, O. Ambacher","doi":"10.1109/MWSYM.2011.5972819","DOIUrl":"https://doi.org/10.1109/MWSYM.2011.5972819","url":null,"abstract":"This paper presents the design and performance of a single chip broadband noise source dedicated for on-chip measurements in a cryogenic environment. The noise source is used to generate the two input noise powers Pc and Ph which are required by the commonly used Y-factor method. High accuracy in temperature control and impedance presented to the device under test is achieved over a wide temperature range from 7 K to 100 K. Noise temperature measurements of a cryogenic low noise amplifier were performed on-chip and show a typical accuracy of ±1 K.","PeriodicalId":294862,"journal":{"name":"2011 IEEE MTT-S International Microwave Symposium","volume":"2011 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121348943","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-06-05DOI: 10.1109/MWSYM.2011.5972886
Chao-Wei Wang, Hsien-Shun Wu, Ching-Kuang C. Tzuang
This paper reports an on-chip synthetic transmission line (TL) with dummy fills in the standard CMOS 0.13 µm 1P8M process. The synthetic TL so-called the complementary conducting strip transmission line (CCS TL) consists of a single trace and a mesh ground plane. The dummy metals are beneath the signal trace. The measured results show the CCS TL with the dummy fills can synthesize the characteristic impedance from 35 Ω to 70 Ω without degrading the quality-factor (Q-factor). A prototype of the K-band CMOS amplifier incorporating this TL demonstrates its miniaturization, and confirms the neglected impacts on the electrical performances.
{"title":"Synthetic quasi-TEM transmission lines with dummy fills for CMOS miniaturized microwave integrated circuit","authors":"Chao-Wei Wang, Hsien-Shun Wu, Ching-Kuang C. Tzuang","doi":"10.1109/MWSYM.2011.5972886","DOIUrl":"https://doi.org/10.1109/MWSYM.2011.5972886","url":null,"abstract":"This paper reports an on-chip synthetic transmission line (TL) with dummy fills in the standard CMOS 0.13 µm 1P8M process. The synthetic TL so-called the complementary conducting strip transmission line (CCS TL) consists of a single trace and a mesh ground plane. The dummy metals are beneath the signal trace. The measured results show the CCS TL with the dummy fills can synthesize the characteristic impedance from 35 Ω to 70 Ω without degrading the quality-factor (Q-factor). A prototype of the K-band CMOS amplifier incorporating this TL demonstrates its miniaturization, and confirms the neglected impacts on the electrical performances.","PeriodicalId":294862,"journal":{"name":"2011 IEEE MTT-S International Microwave Symposium","volume":"70 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116218905","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-06-05DOI: 10.1109/MWSYM.2011.5972630
D. Vavriv, O. Bezvesilniy
A review is given on the recent development of cost-effective SAR systems for small aircrafts in Ukraine. The costs have been substantially reduced due to the introduction of original software solutions. These solutions have enabled to simplify radically the navigation system and to produce geometrically correct SAR images. A technique for 3D imaging with a single-antenna, squint-mode SAR has also been proposed. The efficiency of the solutions has been confirmed with Ku- and X-band SAR systems.
{"title":"Developing SAR for small aircrafts in Ukraine","authors":"D. Vavriv, O. Bezvesilniy","doi":"10.1109/MWSYM.2011.5972630","DOIUrl":"https://doi.org/10.1109/MWSYM.2011.5972630","url":null,"abstract":"A review is given on the recent development of cost-effective SAR systems for small aircrafts in Ukraine. The costs have been substantially reduced due to the introduction of original software solutions. These solutions have enabled to simplify radically the navigation system and to produce geometrically correct SAR images. A technique for 3D imaging with a single-antenna, squint-mode SAR has also been proposed. The efficiency of the solutions has been confirmed with Ku- and X-band SAR systems.","PeriodicalId":294862,"journal":{"name":"2011 IEEE MTT-S International Microwave Symposium","volume":"306 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125764421","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-06-05DOI: 10.1109/MWSYM.2011.5972782
J. Klamkin, S. Madison, D. Oakley, A. Napoleone, F. O’Donnell, Michael Sheehan, L. Missaggia, J. Caissie, J. Plant, P. Juodawlkis
Uni-traveling-carrier waveguide photodiodes (PDs) with variable optical confinement mode size transformers are demonstrated. For these waveguide PDs, the optical mode is large at the input for minimal front-end saturation. The mode transforms as the light propagates so that the absorption profile is optimized for both high-power and high-speed performance.
{"title":"High-power and high-speed waveguide uni-traveling-carrier photodiodes for microwave photonics applications","authors":"J. Klamkin, S. Madison, D. Oakley, A. Napoleone, F. O’Donnell, Michael Sheehan, L. Missaggia, J. Caissie, J. Plant, P. Juodawlkis","doi":"10.1109/MWSYM.2011.5972782","DOIUrl":"https://doi.org/10.1109/MWSYM.2011.5972782","url":null,"abstract":"Uni-traveling-carrier waveguide photodiodes (PDs) with variable optical confinement mode size transformers are demonstrated. For these waveguide PDs, the optical mode is large at the input for minimal front-end saturation. The mode transforms as the light propagates so that the absorption profile is optimized for both high-power and high-speed performance.","PeriodicalId":294862,"journal":{"name":"2011 IEEE MTT-S International Microwave Symposium","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122004311","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-06-05DOI: 10.1109/MWSYM.2011.5972684
P. Veronesi, R. Rosa, C. Leonelli, A. Cappi, A. Barzanti, G. Baldi
Metallic (Ag, Au, Cu) nanoparticles suspensions are gaining an increasing interest in medical applications. Among the existing synthetic routes available, microwave processing allows to better control particle size and to achieve high purity of the products. The large scale production of nanoparticles requires the development of industrially-viable processes, preferably conducted using a “green chemistry” approach, at ambient pressure and relatively low temperature. Based on a recently developed microwave-assisted process in aqueous solution, a new dedicated continuous-flow reactor, made of two twin prismatic applicators has been designed, optimized and tested. It can produce up to 1000 liters/day of metal nanoparticles colloidal suspension.
{"title":"Prismatic applicator for continuous microwave-assisted synthesis of metallic nanoparticles","authors":"P. Veronesi, R. Rosa, C. Leonelli, A. Cappi, A. Barzanti, G. Baldi","doi":"10.1109/MWSYM.2011.5972684","DOIUrl":"https://doi.org/10.1109/MWSYM.2011.5972684","url":null,"abstract":"Metallic (Ag, Au, Cu) nanoparticles suspensions are gaining an increasing interest in medical applications. Among the existing synthetic routes available, microwave processing allows to better control particle size and to achieve high purity of the products. The large scale production of nanoparticles requires the development of industrially-viable processes, preferably conducted using a “green chemistry” approach, at ambient pressure and relatively low temperature. Based on a recently developed microwave-assisted process in aqueous solution, a new dedicated continuous-flow reactor, made of two twin prismatic applicators has been designed, optimized and tested. It can produce up to 1000 liters/day of metal nanoparticles colloidal suspension.","PeriodicalId":294862,"journal":{"name":"2011 IEEE MTT-S International Microwave Symposium","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127940606","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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