Pub Date : 2011-06-05DOI: 10.1109/MWSYM.2011.5972940
M. Ferndahl, H. Vickes
In this paper a new active combing balun, i.e. differential input to single-ended output, with broadband performance, the combiner matrix balun, is presented. Measured results show an amplitude and phase difference of less than 1 dB and 20 degrees from 5 to 40 GHz together with a gain of 2 dB with less than 1 dB ripple. The topology is easily scaled up in frequency and gain and also technology independent making it an interesting choice for future broadband differential applications.
{"title":"The combiner matrix balun, a transistor based differential to single-ended module for broadband applications","authors":"M. Ferndahl, H. Vickes","doi":"10.1109/MWSYM.2011.5972940","DOIUrl":"https://doi.org/10.1109/MWSYM.2011.5972940","url":null,"abstract":"In this paper a new active combing balun, i.e. differential input to single-ended output, with broadband performance, the combiner matrix balun, is presented. Measured results show an amplitude and phase difference of less than 1 dB and 20 degrees from 5 to 40 GHz together with a gain of 2 dB with less than 1 dB ripple. The topology is easily scaled up in frequency and gain and also technology independent making it an interesting choice for future broadband differential applications.","PeriodicalId":294862,"journal":{"name":"2011 IEEE MTT-S International Microwave Symposium","volume":"28 10","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114094567","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-06-05DOI: 10.1109/MWSYM.2011.5972951
M. Chia, CK Ang, B. Luo, S. Leong
We have developed a wideband submillimeterwave communications transceiver system, which is operating at a carrier of 307.2 GHz with bandwidth of 30 GHz. This is able to transmit and receive high speed wireless signals at 12.5 Gigabits per second (Gbps) using coherent binary phase shift keying (BPSK) modulation to about 2 meters. Measured results are reported for Bit Error Rates (BER) and constellation plot. Design considerations for this direct conversion transceiver architecture using subharmonic mixers at submillimeterwave and 76.8 GHz synthesizer will be discussed.
{"title":"Wideband 307 GHz transceiver system for high speed digital wireless at 12.5 Gbps","authors":"M. Chia, CK Ang, B. Luo, S. Leong","doi":"10.1109/MWSYM.2011.5972951","DOIUrl":"https://doi.org/10.1109/MWSYM.2011.5972951","url":null,"abstract":"We have developed a wideband submillimeterwave communications transceiver system, which is operating at a carrier of 307.2 GHz with bandwidth of 30 GHz. This is able to transmit and receive high speed wireless signals at 12.5 Gigabits per second (Gbps) using coherent binary phase shift keying (BPSK) modulation to about 2 meters. Measured results are reported for Bit Error Rates (BER) and constellation plot. Design considerations for this direct conversion transceiver architecture using subharmonic mixers at submillimeterwave and 76.8 GHz synthesizer will be discussed.","PeriodicalId":294862,"journal":{"name":"2011 IEEE MTT-S International Microwave Symposium","volume":"46 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114571797","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-06-05DOI: 10.1109/MWSYM.2011.5972579
M. Tsai, S. Hsu, F. Hsueh, C. Jou, T. Yeh, Jun-De Jin, H. Hsieh
By means of co-designed methodology, a 24-GHz low-noise amplifier, utilizing junction varactors as ESD protection, is first demonstrated by a 65-nm CMOS technology. The ESD protection capability of the junction varactors with multi-finger topology is characterized in details by transmission line pulse (TLP) measurements. Under a 1.2-V supply voltage and a 5.8-mA drain current, the proposed LNA achieves a 1.4-A TLP failure level, corresponding to an over 2-kV human body model (HBM) ESD protection. The LNA presents a lowest noise figure of 2.8 dB at 23.5 GHz and a peak power gain of 14.3 dB at 24 GHz, respectively. The input third-order intercept point (IIP3) is −5 dBm and the input and output return losses are both greater than 10 dB. To the best of our knowledge, this is the first attempt using junction varactors as the ESD device in 65-nm CMOS.
{"title":"A 24-GHz low-noise amplifier co-designed with ESD protection using junction varactors in 65-nm RF CMOS","authors":"M. Tsai, S. Hsu, F. Hsueh, C. Jou, T. Yeh, Jun-De Jin, H. Hsieh","doi":"10.1109/MWSYM.2011.5972579","DOIUrl":"https://doi.org/10.1109/MWSYM.2011.5972579","url":null,"abstract":"By means of co-designed methodology, a 24-GHz low-noise amplifier, utilizing junction varactors as ESD protection, is first demonstrated by a 65-nm CMOS technology. The ESD protection capability of the junction varactors with multi-finger topology is characterized in details by transmission line pulse (TLP) measurements. Under a 1.2-V supply voltage and a 5.8-mA drain current, the proposed LNA achieves a 1.4-A TLP failure level, corresponding to an over 2-kV human body model (HBM) ESD protection. The LNA presents a lowest noise figure of 2.8 dB at 23.5 GHz and a peak power gain of 14.3 dB at 24 GHz, respectively. The input third-order intercept point (IIP3) is −5 dBm and the input and output return losses are both greater than 10 dB. To the best of our knowledge, this is the first attempt using junction varactors as the ESD device in 65-nm CMOS.","PeriodicalId":294862,"journal":{"name":"2011 IEEE MTT-S International Microwave Symposium","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116173100","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-06-05DOI: 10.1109/MWSYM.2011.5972748
Chieh-Hsun Hsiao, Chi-Tsan Chen, T. Horng, K. Peng
This paper studies the local oscillator (LO) pulling problems associated with a direct-conversion transmitter (DCT) that uses non-constant envelope modulation schemes. The relevant theory provides a time-domain LO model with a modulated outer self-injection to predict the phase fluctuation of an LO that is pulled by the transmitter's modulated output signal. Based on a theoretical analysis, the proposed model can be used to evaluate the degraded quality of the transmission signal in terms of error vector magnitude (EVM) and adjacent channel power ratio (ACPR). To mitigate the effects of LO pulling, a novel approach for reducing the AM-FM and PM-FM distortions by a combination of second-point VCO modulation and inner self-injection is proposed. The improved performance is verified by implementing a Quadrature-Phase-Shift-Keying (QPSK) transmitter for cdma2000 1× applications. The theoretical and experimental results agree closely with each other.
{"title":"Direct-conversion transmitter with resistance to local oscillator pulling in non-constant envelope modulation systems","authors":"Chieh-Hsun Hsiao, Chi-Tsan Chen, T. Horng, K. Peng","doi":"10.1109/MWSYM.2011.5972748","DOIUrl":"https://doi.org/10.1109/MWSYM.2011.5972748","url":null,"abstract":"This paper studies the local oscillator (LO) pulling problems associated with a direct-conversion transmitter (DCT) that uses non-constant envelope modulation schemes. The relevant theory provides a time-domain LO model with a modulated outer self-injection to predict the phase fluctuation of an LO that is pulled by the transmitter's modulated output signal. Based on a theoretical analysis, the proposed model can be used to evaluate the degraded quality of the transmission signal in terms of error vector magnitude (EVM) and adjacent channel power ratio (ACPR). To mitigate the effects of LO pulling, a novel approach for reducing the AM-FM and PM-FM distortions by a combination of second-point VCO modulation and inner self-injection is proposed. The improved performance is verified by implementing a Quadrature-Phase-Shift-Keying (QPSK) transmitter for cdma2000 1× applications. The theoretical and experimental results agree closely with each other.","PeriodicalId":294862,"journal":{"name":"2011 IEEE MTT-S International Microwave Symposium","volume":"52 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115309437","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-06-05DOI: 10.1109/MWSYM.2011.5972959
Jeffrey D. Maas, W. Chappell
RF ion traps are a principle means for molecule separation used in mass spectrometry based chemical sensors. Until recently the lab confined mass spectrometer has been too expensive and cumbersome for field based analysis. Advancements in packaging and electronics have led to smaller instrumentation and even more so, the miniaturization of the electric field based ion trap leads to lower voltage and power requirements for handheld mass spectrometers. Of the several types of ion traps the 3D cylindrical ion trap has proven most conducive to scaling; however, it is limited by small trapping capacities and poor trapping efficiency. This paper demonstrates a new RF ion trap design capable of being fabricated through planar techniques amenable to MEMS and system-in-package integration. Furthermore, it has the trapping capacity and trapping efficiency of a 2D rectilinear ion trap.
{"title":"RF planar ion trap for chemical sensing","authors":"Jeffrey D. Maas, W. Chappell","doi":"10.1109/MWSYM.2011.5972959","DOIUrl":"https://doi.org/10.1109/MWSYM.2011.5972959","url":null,"abstract":"RF ion traps are a principle means for molecule separation used in mass spectrometry based chemical sensors. Until recently the lab confined mass spectrometer has been too expensive and cumbersome for field based analysis. Advancements in packaging and electronics have led to smaller instrumentation and even more so, the miniaturization of the electric field based ion trap leads to lower voltage and power requirements for handheld mass spectrometers. Of the several types of ion traps the 3D cylindrical ion trap has proven most conducive to scaling; however, it is limited by small trapping capacities and poor trapping efficiency. This paper demonstrates a new RF ion trap design capable of being fabricated through planar techniques amenable to MEMS and system-in-package integration. Furthermore, it has the trapping capacity and trapping efficiency of a 2D rectilinear ion trap.","PeriodicalId":294862,"journal":{"name":"2011 IEEE MTT-S International Microwave Symposium","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124473395","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-06-05DOI: 10.1109/MWSYM.2011.5972590
T. Klein, C. Gunner, J. Kassner, R. Kulke, H. Wolf
Modern communication satellites need to cover very large service areas with local variations in required transmission capacity. To allow for efficient frequency re-use and bandwidth to local beam allocation a Multiple Feed per Beam (MFB) concept with a four color topology may be used to illuminate the reflector antenna. However, in current systems the size of the feed network requires the usage of one reflector antenna for each color. In this paper a scalable and size-efficient LTCC power divider network is presented, that will form the basis of a MFB network, which enables the use of a single reflector antenna for all four colors. Thus, the payload of the satellite is significantly reduced.
{"title":"Multiple Feed per Beam networks for Ka-band satellite communication systems in LTCC technology","authors":"T. Klein, C. Gunner, J. Kassner, R. Kulke, H. Wolf","doi":"10.1109/MWSYM.2011.5972590","DOIUrl":"https://doi.org/10.1109/MWSYM.2011.5972590","url":null,"abstract":"Modern communication satellites need to cover very large service areas with local variations in required transmission capacity. To allow for efficient frequency re-use and bandwidth to local beam allocation a Multiple Feed per Beam (MFB) concept with a four color topology may be used to illuminate the reflector antenna. However, in current systems the size of the feed network requires the usage of one reflector antenna for each color. In this paper a scalable and size-efficient LTCC power divider network is presented, that will form the basis of a MFB network, which enables the use of a single reflector antenna for all four colors. Thus, the payload of the satellite is significantly reduced.","PeriodicalId":294862,"journal":{"name":"2011 IEEE MTT-S International Microwave Symposium","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124763679","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-06-05DOI: 10.1109/MWSYM.2011.5972724
D. Goshi, Y. Liu, K. Mai, L. Bui, Y. Shih
This paper presents an interferometric real-beam scanning FMCW imaging radar. As opposed to the more commonly discussed interferometric SAR radar system that requires a finite capture interval as well as traditionally long post-processing times, the proposed system is a real-time imaging system that generates a 10Hz real-beam radar image. The interferometric technique is proposed as a means to enhance the raw 2D-based image result by providing target height estimation from phase difference measurements, paving a foundation for a 3D volumetric sensor. The general concepts of the system will be discussed followed by details on the RF characteristics and performance. Lastly, the initial validation results of phase estimation measurements will be presented.
{"title":"A W-band interferometric real-beam scanning FMCW imaging radar","authors":"D. Goshi, Y. Liu, K. Mai, L. Bui, Y. Shih","doi":"10.1109/MWSYM.2011.5972724","DOIUrl":"https://doi.org/10.1109/MWSYM.2011.5972724","url":null,"abstract":"This paper presents an interferometric real-beam scanning FMCW imaging radar. As opposed to the more commonly discussed interferometric SAR radar system that requires a finite capture interval as well as traditionally long post-processing times, the proposed system is a real-time imaging system that generates a 10Hz real-beam radar image. The interferometric technique is proposed as a means to enhance the raw 2D-based image result by providing target height estimation from phase difference measurements, paving a foundation for a 3D volumetric sensor. The general concepts of the system will be discussed followed by details on the RF characteristics and performance. Lastly, the initial validation results of phase estimation measurements will be presented.","PeriodicalId":294862,"journal":{"name":"2011 IEEE MTT-S International Microwave Symposium","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114966814","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-06-05DOI: 10.1109/MWSYM.2011.5973495
Y. Kwark, M. Kotzev, C. Baks, X. Gu, C. Schuster
In this paper the authors present a novel multiport probing fixture for high frequency measurements of dense via arrays. The probing fixture consists of a 36 mm by 36 mm multilayer printed circuit board plugged into an LGA socket clamped down to the device under test using custom hardware. The test signal is launched from top surface mounted coaxial connectors and fanned in with striplines to a 1 mm via pitch on the bottom side. Custom calibration substrates are used to deembed the probing fixture from measurements by applying multiport deembedding techniques. The effect of contact pressure on obtaining reproducible measurements is investigated.
{"title":"Novel multiport probing fixture for high frequency measurements in dense via arrays","authors":"Y. Kwark, M. Kotzev, C. Baks, X. Gu, C. Schuster","doi":"10.1109/MWSYM.2011.5973495","DOIUrl":"https://doi.org/10.1109/MWSYM.2011.5973495","url":null,"abstract":"In this paper the authors present a novel multiport probing fixture for high frequency measurements of dense via arrays. The probing fixture consists of a 36 mm by 36 mm multilayer printed circuit board plugged into an LGA socket clamped down to the device under test using custom hardware. The test signal is launched from top surface mounted coaxial connectors and fanned in with striplines to a 1 mm via pitch on the bottom side. Custom calibration substrates are used to deembed the probing fixture from measurements by applying multiport deembedding techniques. The effect of contact pressure on obtaining reproducible measurements is investigated.","PeriodicalId":294862,"journal":{"name":"2011 IEEE MTT-S International Microwave Symposium","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125151170","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-06-05DOI: 10.1109/MWSYM.2011.5972762
K. Yamauchi, H. Noto, Hiroyuki Nonomura, Satoshi Kunugi, M. Nakayama, Y. Hirano
A Ku-band 60W GaN power amplifier is presented. To obtain the high efficiency, new matching circuit topology to control the reflection phase at the 2nd harmonic frequency (2fo) is applied to the power amplifier. The measured power added efficiency (PAE) of 44.9% with the output power of 47.9dBm (62.2W) is obtained in the 15GHz-band. To the best of our knowledge, the PAE is the highest of the Ku-band GaN power amplifiers reported to date.
{"title":"A 45% power added efficiency, Ku-band 60W GaN power amplifier","authors":"K. Yamauchi, H. Noto, Hiroyuki Nonomura, Satoshi Kunugi, M. Nakayama, Y. Hirano","doi":"10.1109/MWSYM.2011.5972762","DOIUrl":"https://doi.org/10.1109/MWSYM.2011.5972762","url":null,"abstract":"A Ku-band 60W GaN power amplifier is presented. To obtain the high efficiency, new matching circuit topology to control the reflection phase at the 2nd harmonic frequency (2fo) is applied to the power amplifier. The measured power added efficiency (PAE) of 44.9% with the output power of 47.9dBm (62.2W) is obtained in the 15GHz-band. To the best of our knowledge, the PAE is the highest of the Ku-band GaN power amplifiers reported to date.","PeriodicalId":294862,"journal":{"name":"2011 IEEE MTT-S International Microwave Symposium","volume":"51 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125183986","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-06-05DOI: 10.1109/MWSYM.2011.5972681
H. Maune, M. Sazegar, R. Jakoby
The efficiency is one of the most critical parameters in the design of RF power amplifiers. For classical power amplifier (PA) the efficiency drops dramatically in the back-off region. One possibility of enhancing the properties of the PA is the implementation of a load modulation as used in the Doherty topology. The idea of using an adaptive impedance matching network at the output of the transistor is presented and analyzed in this paper. The topology of the matching network enables the connection of the matching circuit directly to the transistor. The matching network has been designed using the minimum mean square error method and realized on a BST thick film substrate. The measured input impedance is in the range of several ohms for a load of 50Ohm as required for power amplifiers.
{"title":"Tunable impedance matching networks for agile RF power amplifiers","authors":"H. Maune, M. Sazegar, R. Jakoby","doi":"10.1109/MWSYM.2011.5972681","DOIUrl":"https://doi.org/10.1109/MWSYM.2011.5972681","url":null,"abstract":"The efficiency is one of the most critical parameters in the design of RF power amplifiers. For classical power amplifier (PA) the efficiency drops dramatically in the back-off region. One possibility of enhancing the properties of the PA is the implementation of a load modulation as used in the Doherty topology. The idea of using an adaptive impedance matching network at the output of the transistor is presented and analyzed in this paper. The topology of the matching network enables the connection of the matching circuit directly to the transistor. The matching network has been designed using the minimum mean square error method and realized on a BST thick film substrate. The measured input impedance is in the range of several ohms for a load of 50Ohm as required for power amplifiers.","PeriodicalId":294862,"journal":{"name":"2011 IEEE MTT-S International Microwave Symposium","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125761841","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
京公网安备 11010802042870号
京ICP备2023020795号-1
扫码关注我们
求助内容：
应助结果提醒方式：