Pub Date : 2018-08-01DOI: 10.1109/RFIT.2018.8524069
Wei-Cheng Huang, Chau-Ching Chiong, Huei Wang
A fully-integrated S-band high-gain MMIC low noise amplifier (LNA) with differential input and single-ended output is presented and implemented in $0.15-{mu} mathbf{m}$ GaAs pHEMT for Square Kilometre Array (SKA) astronomical receiver. The low-loss input noise matching network is designed, and the fully on-chip LC balun is introduced between the first stage LNA core and the second stage amplifier to improve overall system noise figure. The 1-dB bandwidth of the LNA covers from 1.5 to 3.7 GHz. The measurement results demonstrate 31.8-dB gain, average in-band noise figure of 0.73 dB with DC power consumption of 25 mW. The chip area is $2.5 times 2 mathbf{mm}^{2}$. Also, a noise figure measurement method for the 3-port differential-input-to-single-ended-output amplifiers is introduced in this paper.
{"title":"A Fully-Integrated $S$-Band Differential LNA in $0.15-mu mathrm{m}$ GaAs pHEMT for Radio Astronomical Receiver","authors":"Wei-Cheng Huang, Chau-Ching Chiong, Huei Wang","doi":"10.1109/RFIT.2018.8524069","DOIUrl":"https://doi.org/10.1109/RFIT.2018.8524069","url":null,"abstract":"A fully-integrated S-band high-gain MMIC low noise amplifier (LNA) with differential input and single-ended output is presented and implemented in $0.15-{mu} mathbf{m}$ GaAs pHEMT for Square Kilometre Array (SKA) astronomical receiver. The low-loss input noise matching network is designed, and the fully on-chip LC balun is introduced between the first stage LNA core and the second stage amplifier to improve overall system noise figure. The 1-dB bandwidth of the LNA covers from 1.5 to 3.7 GHz. The measurement results demonstrate 31.8-dB gain, average in-band noise figure of 0.73 dB with DC power consumption of 25 mW. The chip area is $2.5 times 2 mathbf{mm}^{2}$. Also, a noise figure measurement method for the 3-port differential-input-to-single-ended-output amplifiers is introduced in this paper.","PeriodicalId":297122,"journal":{"name":"2018 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","volume":"44 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114976576","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-08-01DOI: 10.1109/RFIT.2018.8524123
A. Jaiswal, Sukomal Dey, M. Abegaonkar, S. Koul
This paper presents a radio frequency microelectromechanical system (RF MEMS) based low loss and high transmit-to-receive isolation single-pole-double-throw (SPDT) switch integrated with antenna at 60 GHz for transceiver modules. The device is fabricated on $boldsymbol{635 mu mathrm{m}}$ alumina substrate using surface micromachining process. SPDT switch features a measured return loss of > 15 dB, insertion loss of < 2.47 dB and isolation of > 24.6 dB over the frequency band of 55–65 GHz. Total area of the SPDT switch is $boldsymbol{2.443 times 0.87 text{mm}^{2}}$. A conventional patch antenna designed at 60 GHz is incorporated at RF-output port of the SPDT switch. The integrated antenna shows a measured return loss of > 25 dB, and 10 dB impedance bandwidth of 8.5% at 60 GHz, when it is connected with either of the input ports of the SPDT switch. Also, a simulated gain of 5.433 dB is observed at 60 GHz. The total area of the integrated device is small enough (8.29 mm2) to fit in 60 GHz T/R modules. Fabricated device is also presented in the paper.
{"title":"Design and Development of 60 GHz Antenna Integrated with RF MEMS SPDT Switch for Transceiver Modules","authors":"A. Jaiswal, Sukomal Dey, M. Abegaonkar, S. Koul","doi":"10.1109/RFIT.2018.8524123","DOIUrl":"https://doi.org/10.1109/RFIT.2018.8524123","url":null,"abstract":"This paper presents a radio frequency microelectromechanical system (RF MEMS) based low loss and high transmit-to-receive isolation single-pole-double-throw (SPDT) switch integrated with antenna at 60 GHz for transceiver modules. The device is fabricated on $boldsymbol{635 mu mathrm{m}}$ alumina substrate using surface micromachining process. SPDT switch features a measured return loss of > 15 dB, insertion loss of < 2.47 dB and isolation of > 24.6 dB over the frequency band of 55–65 GHz. Total area of the SPDT switch is $boldsymbol{2.443 times 0.87 text{mm}^{2}}$. A conventional patch antenna designed at 60 GHz is incorporated at RF-output port of the SPDT switch. The integrated antenna shows a measured return loss of > 25 dB, and 10 dB impedance bandwidth of 8.5% at 60 GHz, when it is connected with either of the input ports of the SPDT switch. Also, a simulated gain of 5.433 dB is observed at 60 GHz. The total area of the integrated device is small enough (8.29 mm2) to fit in 60 GHz T/R modules. Fabricated device is also presented in the paper.","PeriodicalId":297122,"journal":{"name":"2018 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116690474","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-08-01DOI: 10.1109/RFIT.2018.8524077
Ping-Hsun Wu
A tunable 3rd-order Butterworth low-pass filter occupying a miniaturized 0.033 mm2 chip area is designed and integrated as a building block in a 65 nm CMOS wideband transceiver RFIC for multi-mode channel selection. Using compact binary-weighted current mode output OTA, the filter exhibits digitally programmable cutoff frequencies from 13.3 to 53.6 MHz. Measurement results show an in-band IIP3 of 19–21 dBm, and an input-referred noise of 33–38 nV/√Hz at a power consumption of 4.7-8.4 mW from a 1.2 V supply.
{"title":"A 0.033mm2 Integrated Tunable Low-Pass Filter for Wideband Transceiver RFIC in 65 nm CMOS","authors":"Ping-Hsun Wu","doi":"10.1109/RFIT.2018.8524077","DOIUrl":"https://doi.org/10.1109/RFIT.2018.8524077","url":null,"abstract":"A tunable 3rd-order Butterworth low-pass filter occupying a miniaturized 0.033 mm2 chip area is designed and integrated as a building block in a 65 nm CMOS wideband transceiver RFIC for multi-mode channel selection. Using compact binary-weighted current mode output OTA, the filter exhibits digitally programmable cutoff frequencies from 13.3 to 53.6 MHz. Measurement results show an in-band IIP3 of 19–21 dBm, and an input-referred noise of 33–38 nV/√Hz at a power consumption of 4.7-8.4 mW from a 1.2 V supply.","PeriodicalId":297122,"journal":{"name":"2018 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117348331","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-08-01DOI: 10.1109/RFIT.2018.8524103
S. Pegwal, M. Abegaonkar, A. Basu, S. Koul
This paper presents the design and performance of a planar single balanced broadband mixer. A wideband balun is used to feed the balanced LO input to the mixer circuit. This design is fabricated on 8mil Roger's RO4003C substrate and commercially available Aeroflex/Metelics MGS-904 GaAs beam lead schottky diodes are used to provide non-linearity for the mixing. This mixer requires no external bias and can operate for a frequency range (RF/LO) from 3GHz to 18GHz. Measured performance shows an average conversion loss of 15dB along with LO-IF isolation better than 24dB. The mixer can be used for designing cost effective components for variety of UBW applications such as Wi-Fi, WiMAX, GSM etc.
{"title":"Single Balanced Mixer for UWB Applications","authors":"S. Pegwal, M. Abegaonkar, A. Basu, S. Koul","doi":"10.1109/RFIT.2018.8524103","DOIUrl":"https://doi.org/10.1109/RFIT.2018.8524103","url":null,"abstract":"This paper presents the design and performance of a planar single balanced broadband mixer. A wideband balun is used to feed the balanced LO input to the mixer circuit. This design is fabricated on 8mil Roger's RO4003C substrate and commercially available Aeroflex/Metelics MGS-904 GaAs beam lead schottky diodes are used to provide non-linearity for the mixing. This mixer requires no external bias and can operate for a frequency range (RF/LO) from 3GHz to 18GHz. Measured performance shows an average conversion loss of 15dB along with LO-IF isolation better than 24dB. The mixer can be used for designing cost effective components for variety of UBW applications such as Wi-Fi, WiMAX, GSM etc.","PeriodicalId":297122,"journal":{"name":"2018 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","volume":"34 2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123286288","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-08-01DOI: 10.1109/RFIT.2018.8524125
Debin Hou, Jixin Chen, Peigen Zhou, Chen Wang, P. Yan, W. Hong
The development of the terahertz (THz) integrated circuits is an important aspect for the THz applications. This paper reviews the recent research progress of THz circuits developed in State Key Lab. Of Millimeter Waves (SKLMW) of China. The multipliers, mixers, and systems over 200 GHz with GaAs technology has been demonstrated with good performance. Compared with that, the VCOs and mixers over 300 GHz with Silicon-based technology has also been demonstrated for better cost reduction and integration. The research aspect would benefit for the future THz system improvement.
{"title":"Research Progress of the Circuits for the THz Systems","authors":"Debin Hou, Jixin Chen, Peigen Zhou, Chen Wang, P. Yan, W. Hong","doi":"10.1109/RFIT.2018.8524125","DOIUrl":"https://doi.org/10.1109/RFIT.2018.8524125","url":null,"abstract":"The development of the terahertz (THz) integrated circuits is an important aspect for the THz applications. This paper reviews the recent research progress of THz circuits developed in State Key Lab. Of Millimeter Waves (SKLMW) of China. The multipliers, mixers, and systems over 200 GHz with GaAs technology has been demonstrated with good performance. Compared with that, the VCOs and mixers over 300 GHz with Silicon-based technology has also been demonstrated for better cost reduction and integration. The research aspect would benefit for the future THz system improvement.","PeriodicalId":297122,"journal":{"name":"2018 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","volume":"365 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124585089","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-08-01DOI: 10.1109/RFIT.2018.8524053
Zhigang Peng, Debin Hou, Jixin Chen, Yu Xiang, W. Hong
A fully integrated low phase-noise and wide tuning-range differential Colpitts voltage-controlled-oscillator (VCO) designed and fabricated in 0.13um SiGe BiCMOS technology at 28 GHz for 5G wireless communications is presented. The proposed VCO utilizes inductive emitter degeneration and resistive tail bias to achieve low phase noise and wide tuning range. The measured phase noise is about −109.1 dBc/Hz at 1 MHz offset at a center frequency of 27.6 GHz and the measured tuning range is from 25.1 GHz to 29.9 GHz (17.3%). The measured output power delivered by the VCO is +6.5 dBm. Both the phase noise and the tuning range of this work are comparable with other silicon-based VCOs around 28 GHz.
{"title":"A 28 GHz Low Phase-Noise Colpitts VCO with Wide Tuning-Range in SiGe Technology","authors":"Zhigang Peng, Debin Hou, Jixin Chen, Yu Xiang, W. Hong","doi":"10.1109/RFIT.2018.8524053","DOIUrl":"https://doi.org/10.1109/RFIT.2018.8524053","url":null,"abstract":"A fully integrated low phase-noise and wide tuning-range differential Colpitts voltage-controlled-oscillator (VCO) designed and fabricated in 0.13um SiGe BiCMOS technology at 28 GHz for 5G wireless communications is presented. The proposed VCO utilizes inductive emitter degeneration and resistive tail bias to achieve low phase noise and wide tuning range. The measured phase noise is about −109.1 dBc/Hz at 1 MHz offset at a center frequency of 27.6 GHz and the measured tuning range is from 25.1 GHz to 29.9 GHz (17.3%). The measured output power delivered by the VCO is +6.5 dBm. Both the phase noise and the tuning range of this work are comparable with other silicon-based VCOs around 28 GHz.","PeriodicalId":297122,"journal":{"name":"2018 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126428652","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-08-01DOI: 10.1109/RFIT.2018.8524086
N. Suematsu
Since the maximum operational frequency of digital RF based on A/D and D/A is Nyquist frequency, it has been difficult to apply digital RF concept to higher microwave frequency range. In this paper, direct digital RF technology is introduced to break this Nyquist limit. This technology utilizes the higher-order Nyquist Zones (beyond the Nyquist frequency range) and higher microwave frequency signal can be handled directly. Higher order direct RF undersampling architecture is introduced for receiver and a fabricated results of 28GHz-band receiver using 1GHz sampling clock will be shown. A 1-bit bandpass $mathbf{Delta}mathbf{Sigma}$ modulator is introduced for transmitter which generates a 26GHz-band RF signal directly from 8Gbps 1-bit digital stream. In order to enhance the image signal level and SNR, RZ signaling and Manchester coding techniques are examined. This direct digital RF technology brings really digital rich microwave/MMW transceivers in future CMOS era.
{"title":"Direct Digital RF Technology - Challenges for Beyond Nyquist Frequency Range","authors":"N. Suematsu","doi":"10.1109/RFIT.2018.8524086","DOIUrl":"https://doi.org/10.1109/RFIT.2018.8524086","url":null,"abstract":"Since the maximum operational frequency of digital RF based on A/D and D/A is Nyquist frequency, it has been difficult to apply digital RF concept to higher microwave frequency range. In this paper, direct digital RF technology is introduced to break this Nyquist limit. This technology utilizes the higher-order Nyquist Zones (beyond the Nyquist frequency range) and higher microwave frequency signal can be handled directly. Higher order direct RF undersampling architecture is introduced for receiver and a fabricated results of 28GHz-band receiver using 1GHz sampling clock will be shown. A 1-bit bandpass $mathbf{Delta}mathbf{Sigma}$ modulator is introduced for transmitter which generates a 26GHz-band RF signal directly from 8Gbps 1-bit digital stream. In order to enhance the image signal level and SNR, RZ signaling and Manchester coding techniques are examined. This direct digital RF technology brings really digital rich microwave/MMW transceivers in future CMOS era.","PeriodicalId":297122,"journal":{"name":"2018 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132321141","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-08-01DOI: 10.1109/RFIT.2018.8524070
Nagahiro Yoshino, K. Norishima, M. Motoyoshi, S. Kameda, N. Suematsu
We have studied direct RF undersampling reception to reduce the size and power consumption. We already developed a series/shunt switching type sample and hold (S/H) integrated circuit (IC) by using 90 nm complementary metal oxide semiconductor (CMOS) process for Ka-band (19.4 - 20.2 GHz) very small aperture terminal (VSAT) application. This IC performed signal-to-noise ratio (SNR) of higher than 27.3 dB. For the higher frequency operation and the reception of multi-level modulated signal, the SNR improvement will be required. In this paper, a 28 GHz-band S/H IC with higher SNR has been developed. In order to improve SNR at higher RF frequency, 65 nm CMOS process is introduced to enhance the switching speed of sampling, the size of hold capacitor is optimized and the two-stage output buffer amplifier is employed. The fabricated S/H IC performs the SNR of higher than 41.2 dB and the error vector magnitude (EVM) of 4.4% (32 Mbaud 64 quadrature amplitude modulation (QAM)) in 28 GHz-band.
{"title":"A 28 GHz-Band Direct RF Undersampling S/H CMOS IC with 40 dB SNR","authors":"Nagahiro Yoshino, K. Norishima, M. Motoyoshi, S. Kameda, N. Suematsu","doi":"10.1109/RFIT.2018.8524070","DOIUrl":"https://doi.org/10.1109/RFIT.2018.8524070","url":null,"abstract":"We have studied direct RF undersampling reception to reduce the size and power consumption. We already developed a series/shunt switching type sample and hold (S/H) integrated circuit (IC) by using 90 nm complementary metal oxide semiconductor (CMOS) process for Ka-band (19.4 - 20.2 GHz) very small aperture terminal (VSAT) application. This IC performed signal-to-noise ratio (SNR) of higher than 27.3 dB. For the higher frequency operation and the reception of multi-level modulated signal, the SNR improvement will be required. In this paper, a 28 GHz-band S/H IC with higher SNR has been developed. In order to improve SNR at higher RF frequency, 65 nm CMOS process is introduced to enhance the switching speed of sampling, the size of hold capacitor is optimized and the two-stage output buffer amplifier is employed. The fabricated S/H IC performs the SNR of higher than 41.2 dB and the error vector magnitude (EVM) of 4.4% (32 Mbaud 64 quadrature amplitude modulation (QAM)) in 28 GHz-band.","PeriodicalId":297122,"journal":{"name":"2018 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133431456","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-08-01DOI: 10.1109/RFIT.2018.8524078
A. Lagosh, V. Golubkov, V. Ilyin, A. Korlyakov, V. Luchinin
Silicon carbide is one of the most promising materials for RF devices operating in harsh environment conditions. This paper represents main features of RF switches designed and produced at St. Petersburg Electrotechnical University. Two types of RF switches are observed: MEMS switches with a movable element based on the silicon carbide film with controlled bending and matrices of highly stable autoemission structures based on the composition “silicon carbide - nanocrystalline diamond”. The presented component base allows to cover the frequency range from GHz to THz.
{"title":"Silicon Carbide Micromechanical and Autoemission Structure-Based RF Switches for Harsh Environments","authors":"A. Lagosh, V. Golubkov, V. Ilyin, A. Korlyakov, V. Luchinin","doi":"10.1109/RFIT.2018.8524078","DOIUrl":"https://doi.org/10.1109/RFIT.2018.8524078","url":null,"abstract":"Silicon carbide is one of the most promising materials for RF devices operating in harsh environment conditions. This paper represents main features of RF switches designed and produced at St. Petersburg Electrotechnical University. Two types of RF switches are observed: MEMS switches with a movable element based on the silicon carbide film with controlled bending and matrices of highly stable autoemission structures based on the composition “silicon carbide - nanocrystalline diamond”. The presented component base allows to cover the frequency range from GHz to THz.","PeriodicalId":297122,"journal":{"name":"2018 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","volume":"45 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132159853","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-08-01DOI: 10.1109/RFIT.2018.8524057
Ui‐Gyu Choi, Jong‐Ryul Yang
The class-E power amplifier module using an adaptive power combiner is proposed for 6.78-MHz wireless power transfer system for medium power transmission. Two class-E power amplifiers are designed to obtain more than 50-W output power at the load impedance which maximize the power-added efficiency of the amplifiers. The input impedances of the proposed power combiner are matched to the load impedances of the amplifiers, and the output signals of the amplifiers are combined and transmitted to a $50-{Omega}$ reference impedance. The output characteristics of the proposed module are obtained using EM circuit co-simulation including the parasitic effects on a FR4 PCB. In the simulation results, the proposed module shows an output power of 50.2 dBm, a power-added efficiency of 88.5%, and a power gain of 29.2 dB at a 6.78-MHz operating frequency. The power-added efficiency of the proposed module is improved by 5% compared with a single 100-W class E power amplifier using the same power transistor.
提出了一种基于自适应功率合成器的e类功率放大模块，用于6.78 mhz无线功率传输系统中功率传输。设计了两个e类功率放大器，以在负载阻抗下获得大于50 w的输出功率，从而最大限度地提高放大器的功率附加效率。所提出的功率合成器的输入阻抗与放大器的负载阻抗匹配，放大器的输出信号被组合并传输到$50-{Omega}$参考阻抗。通过电磁电路联合仿真，得到了该模块的输出特性，并考虑了FR4 PCB上的寄生效应。仿真结果表明，该模块在6.78 mhz工作频率下的输出功率为50.2 dBm，功率增益为88.5%，功率增益为29.2 dB。与使用相同功率晶体管的单个100 w E类功率放大器相比，该模块的功率附加效率提高了5%。
{"title":"A 6.78-MHz 100-W Class E Power Amplifier Module with an Adaptive Power Combiner","authors":"Ui‐Gyu Choi, Jong‐Ryul Yang","doi":"10.1109/RFIT.2018.8524057","DOIUrl":"https://doi.org/10.1109/RFIT.2018.8524057","url":null,"abstract":"The class-E power amplifier module using an adaptive power combiner is proposed for 6.78-MHz wireless power transfer system for medium power transmission. Two class-E power amplifiers are designed to obtain more than 50-W output power at the load impedance which maximize the power-added efficiency of the amplifiers. The input impedances of the proposed power combiner are matched to the load impedances of the amplifiers, and the output signals of the amplifiers are combined and transmitted to a $50-{Omega}$ reference impedance. The output characteristics of the proposed module are obtained using EM circuit co-simulation including the parasitic effects on a FR4 PCB. In the simulation results, the proposed module shows an output power of 50.2 dBm, a power-added efficiency of 88.5%, and a power gain of 29.2 dB at a 6.78-MHz operating frequency. The power-added efficiency of the proposed module is improved by 5% compared with a single 100-W class E power amplifier using the same power transistor.","PeriodicalId":297122,"journal":{"name":"2018 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","volume":"125 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124205021","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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