Pub Date : 2018-08-01DOI: 10.1109/RFIT.2018.8524031
I. Huang, Yu-Ci Li, Wu-Chen Lin, Jeng‐Han Tsai, A. Alshehri, M. Almalki, A. Sayed, Hsin-Chia Lu, Tian-Wei Huang
In this paper, a review of high image rejection up-or down-converters is presented. Next-generation satellite applications need high uplink and downlink speeds, so a broadband design with a low image rejection ratio is important. By using a $0.18 {mu}mathbf{m}$ CMOS single-quadrature architecture, this paper presents a 28-30GHz up-converter with a low-IF frequency range of 1.2 GHz and an IRR of <-38 dBc. Also presented is a 17-21 GHz down-converter with a low-IF frequency range of 2.2 GHz and a <-40 dBc IRR.
{"title":"Reviews of High Image Rejection Up and Down Converters for Next-Generation Satellite Applications","authors":"I. Huang, Yu-Ci Li, Wu-Chen Lin, Jeng‐Han Tsai, A. Alshehri, M. Almalki, A. Sayed, Hsin-Chia Lu, Tian-Wei Huang","doi":"10.1109/RFIT.2018.8524031","DOIUrl":"https://doi.org/10.1109/RFIT.2018.8524031","url":null,"abstract":"In this paper, a review of high image rejection up-or down-converters is presented. Next-generation satellite applications need high uplink and downlink speeds, so a broadband design with a low image rejection ratio is important. By using a $0.18 {mu}mathbf{m}$ CMOS single-quadrature architecture, this paper presents a 28-30GHz up-converter with a low-IF frequency range of 1.2 GHz and an IRR of <-38 dBc. Also presented is a 17-21 GHz down-converter with a low-IF frequency range of 2.2 GHz and a <-40 dBc IRR.","PeriodicalId":297122,"journal":{"name":"2018 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115368628","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-08-01DOI: 10.1109/RFIT.2018.8524028
Wei-Kuo Cheng, Chia-Chan Chang, T. Tsai
In this work, a 60-GHz $2times 2$ circular-polarization (CP) antenna array is newly proposed for the applications of monostatic radar systems. Due to the nature of a reverse sense of rotation when the radar signal is backscattered from metal surfaces or biological objects, the proposed antenna array is designed to retain its reciprocity but with reverse polarization. The good isolation between TX/RX can be thus achieved without using the circulator in the system. This proposed antenna consists of a $2times 2$ path antenna array and a feeding network. The circuit was implemented using glass-based integrated passive device (IPD) technology with chip size as $4.065times 4.065 mathbf{mm}^{2}$. The results demonstrate that the high isolation of 42 dB can be achieved at 62.4 GHz. This work provides a feasible solution for radar MMICs.
{"title":"Design of 60-GHz Circular-Polarization Antenna Array in Glass-IPD for Monostatic Radar MMICs","authors":"Wei-Kuo Cheng, Chia-Chan Chang, T. Tsai","doi":"10.1109/RFIT.2018.8524028","DOIUrl":"https://doi.org/10.1109/RFIT.2018.8524028","url":null,"abstract":"In this work, a 60-GHz $2times 2$ circular-polarization (CP) antenna array is newly proposed for the applications of monostatic radar systems. Due to the nature of a reverse sense of rotation when the radar signal is backscattered from metal surfaces or biological objects, the proposed antenna array is designed to retain its reciprocity but with reverse polarization. The good isolation between TX/RX can be thus achieved without using the circulator in the system. This proposed antenna consists of a $2times 2$ path antenna array and a feeding network. The circuit was implemented using glass-based integrated passive device (IPD) technology with chip size as $4.065times 4.065 mathbf{mm}^{2}$. The results demonstrate that the high isolation of 42 dB can be achieved at 62.4 GHz. This work provides a feasible solution for radar MMICs.","PeriodicalId":297122,"journal":{"name":"2018 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116794591","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-08-01DOI: 10.1109/RFIT.2018.8524043
J. Rieh, J. Yun, Daekeun Yoon, Jungsoo Kim, Heekang Son
An overview of various high-frequency InP HBT oscillators that can be used as terahertz signal sources is presented. A 300-GHz fundamental-mode oscillator was first developed based on InP HBT technology, and then subsequently modified for additional oscillators with improved function or performance, which includes a 300-GHz voltage-controlled oscillator (VCO), a 280-GHz high-power oscillator with 10-dBm output, and a 600-GHz push-push oscillator. The 300-GHz oscillator was also successfully employed as a signal source for THz imaging, which is also briefly described.
{"title":"Terahertz InP HBT Oscillators","authors":"J. Rieh, J. Yun, Daekeun Yoon, Jungsoo Kim, Heekang Son","doi":"10.1109/RFIT.2018.8524043","DOIUrl":"https://doi.org/10.1109/RFIT.2018.8524043","url":null,"abstract":"An overview of various high-frequency InP HBT oscillators that can be used as terahertz signal sources is presented. A 300-GHz fundamental-mode oscillator was first developed based on InP HBT technology, and then subsequently modified for additional oscillators with improved function or performance, which includes a 300-GHz voltage-controlled oscillator (VCO), a 280-GHz high-power oscillator with 10-dBm output, and a 600-GHz push-push oscillator. The 300-GHz oscillator was also successfully employed as a signal source for THz imaging, which is also briefly described.","PeriodicalId":297122,"journal":{"name":"2018 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","volume":"13 4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115399460","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-08-01DOI: 10.1109/RFIT.2018.8524046
Haoyi Dong, Jixin Chen, Debin Hou, Yu Xiang, W. Hong
This paper proposes a compact symmetrical single pole double throw switch (SPDT) in $0.13mumathrm{m}$ BICMOS technology. By replacing the traditional quarter-wave transmission line with lumped components, the designed switch achieves 1.5dB insertion loss and 21 dB isolation at 26GHz within a compact size. Consuming very low DC power consumption, the SPDT exhibits good power handling capability and its input P1dB is larger than 17 dBm. The proposed switch could also perform as double pole single throw switch (DPST), which proves its bidirectional function.
{"title":"A Compact Bi-directional K and Ka Band SPDT in $0.13mumathrm{m}$ SiGe BiCMOS Process","authors":"Haoyi Dong, Jixin Chen, Debin Hou, Yu Xiang, W. Hong","doi":"10.1109/RFIT.2018.8524046","DOIUrl":"https://doi.org/10.1109/RFIT.2018.8524046","url":null,"abstract":"This paper proposes a compact symmetrical single pole double throw switch (SPDT) in $0.13mumathrm{m}$ BICMOS technology. By replacing the traditional quarter-wave transmission line with lumped components, the designed switch achieves 1.5dB insertion loss and 21 dB isolation at 26GHz within a compact size. Consuming very low DC power consumption, the SPDT exhibits good power handling capability and its input P1dB is larger than 17 dBm. The proposed switch could also perform as double pole single throw switch (DPST), which proves its bidirectional function.","PeriodicalId":297122,"journal":{"name":"2018 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115521371","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-08-01DOI: 10.1109/RFIT.2018.8524126
R. Ma, M. Benosman, K. Manjunatha, Y. Komatsuzaki, S. Shinjo, K. Teo, P. Orlik
This paper reports a new architecture of power amplifiers (PA), for which machine learning is applied in real-time to adaptively optimize PA performance. For varying input stimuli such as carrier frequency, bandwidth and power level, developed algorithms can intelligently optimize parameters including bias voltages, input signal phases and power splitting ratios based on a user-defined cost function. Our demonstrator of a wideband GaN Digital Doherty PA achieves significant performance enhancement from 3.0-3.8 GHz, in particular, at high backoff power with approximately 3dB more Gain and 20% higher efficiency compared with analog counterpart. To the authors' best knowledge, this is the first reported work of model-free machine learning applied for Doherty PA control. It explores a new area of RF PA optimization, in which accurate analytical models and tedious manual tuning can be avoided.
{"title":"Machine-Learning Based Digital Doherty Power Amplifier","authors":"R. Ma, M. Benosman, K. Manjunatha, Y. Komatsuzaki, S. Shinjo, K. Teo, P. Orlik","doi":"10.1109/RFIT.2018.8524126","DOIUrl":"https://doi.org/10.1109/RFIT.2018.8524126","url":null,"abstract":"This paper reports a new architecture of power amplifiers (PA), for which machine learning is applied in real-time to adaptively optimize PA performance. For varying input stimuli such as carrier frequency, bandwidth and power level, developed algorithms can intelligently optimize parameters including bias voltages, input signal phases and power splitting ratios based on a user-defined cost function. Our demonstrator of a wideband GaN Digital Doherty PA achieves significant performance enhancement from 3.0-3.8 GHz, in particular, at high backoff power with approximately 3dB more Gain and 20% higher efficiency compared with analog counterpart. To the authors' best knowledge, this is the first reported work of model-free machine learning applied for Doherty PA control. It explores a new area of RF PA optimization, in which accurate analytical models and tedious manual tuning can be avoided.","PeriodicalId":297122,"journal":{"name":"2018 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","volume":"2012 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125633727","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-08-01DOI: 10.1109/RFIT.2018.8524087
H. Aoki, H. Sakairi, N. Kuroda, Yohei Nakamura, K. Chikamatsu, K. Nakahara
A compact model of AlN/GaN metal-insulator-semiconductor (MIS)-HEMTs which supports DC and small-signal AC with self-heating and frequency dispersion effects is developed. The model is implemented in Verilog-A source codes. The model parameters are extracted from measured data of the G-S-G transistor test structures that we fabricated. Both of self-heating and frequency dispersion characteristics are successfully handled in the model. The results show good agreements between device measurements and simulations.
{"title":"AlGaN/GaN MIS HEMT Modeling of Frequency Dispersion and Self-Heating Effects","authors":"H. Aoki, H. Sakairi, N. Kuroda, Yohei Nakamura, K. Chikamatsu, K. Nakahara","doi":"10.1109/RFIT.2018.8524087","DOIUrl":"https://doi.org/10.1109/RFIT.2018.8524087","url":null,"abstract":"A compact model of AlN/GaN metal-insulator-semiconductor (MIS)-HEMTs which supports DC and small-signal AC with self-heating and frequency dispersion effects is developed. The model is implemented in Verilog-A source codes. The model parameters are extracted from measured data of the G-S-G transistor test structures that we fabricated. Both of self-heating and frequency dispersion characteristics are successfully handled in the model. The results show good agreements between device measurements and simulations.","PeriodicalId":297122,"journal":{"name":"2018 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128901184","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-08-01DOI: 10.1109/RFIT.2018.8524071
H. Lee, C. Park
This paper presents a high-speed and low-power down-conversion mixer implemented 65 nm CMOS technology. The proposed mixer operates at 60-GHz carrier frequency. The mixer consists of a double-balanced gilbert cell and current-bleeding transistors. The mixer consumes 20 mW with the buffer but 8 mW without the buffer and achieves a conversion gain of - 1.2 dB and IF bandwidth of 8 GHz at 60-GHz carrier frequency. As a result, this low-power and wideband mixer can demodulate a Gbps-modulated signal.
{"title":"A 60-GHz Wideband Down-conversion Mixer for Low-power and High-speed Wireless Communication","authors":"H. Lee, C. Park","doi":"10.1109/RFIT.2018.8524071","DOIUrl":"https://doi.org/10.1109/RFIT.2018.8524071","url":null,"abstract":"This paper presents a high-speed and low-power down-conversion mixer implemented 65 nm CMOS technology. The proposed mixer operates at 60-GHz carrier frequency. The mixer consists of a double-balanced gilbert cell and current-bleeding transistors. The mixer consumes 20 mW with the buffer but 8 mW without the buffer and achieves a conversion gain of - 1.2 dB and IF bandwidth of 8 GHz at 60-GHz carrier frequency. As a result, this low-power and wideband mixer can demodulate a Gbps-modulated signal.","PeriodicalId":297122,"journal":{"name":"2018 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","volume":"66 7","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114049861","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-08-01DOI: 10.1109/RFIT.2018.8524034
Huei Wang, Jung-Lin Lin, Zuo‐Min Tsai
This paper reviews the current status of millimeter-wave CMOS power amplifiers. The basic power amplifier architectures will be presented, together with the power combining techniques for higher output power amplifiers. State-of-the-art performances of CMOS power amplifiers, including power gain, output power, and power added efficiency, will be summarized along with various frequencies in millimeter-wave regime. Due to the requirement of modern wireless communication applications for high data rate transmission, the linearity becomes crucial for power amplifier in digital communication systems. Moreover, the efficiency at output power back-off operation is also important, especially for the mobile digital communication devices. The reported linearization techniques in millimeter-wave CMOS power amplifiers will also be presented, with the illustration of design examples.
{"title":"Review of Millimeter-Wave CMOS Power Amplifiers","authors":"Huei Wang, Jung-Lin Lin, Zuo‐Min Tsai","doi":"10.1109/RFIT.2018.8524034","DOIUrl":"https://doi.org/10.1109/RFIT.2018.8524034","url":null,"abstract":"This paper reviews the current status of millimeter-wave CMOS power amplifiers. The basic power amplifier architectures will be presented, together with the power combining techniques for higher output power amplifiers. State-of-the-art performances of CMOS power amplifiers, including power gain, output power, and power added efficiency, will be summarized along with various frequencies in millimeter-wave regime. Due to the requirement of modern wireless communication applications for high data rate transmission, the linearity becomes crucial for power amplifier in digital communication systems. Moreover, the efficiency at output power back-off operation is also important, especially for the mobile digital communication devices. The reported linearization techniques in millimeter-wave CMOS power amplifiers will also be presented, with the illustration of design examples.","PeriodicalId":297122,"journal":{"name":"2018 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129317168","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-08-01DOI: 10.1109/RFIT.2018.8524040
Chen Wang, Debin Hou, Jixin Chen, W. Hong
A J-band wideband fourth-harmonically pumped mixer with low conversion loss using $0.13 {mu} mathbf{m}$ SiGe BiCMOS technology is reported. Compact equivalent anti-parallel-diode-pair (APDP) with minimized parasitic effect is investigated for conversion loss reduction. Driven by an external power amplifier with no less than 13 dBm LO power from 70 GHz to 85 GHz, the mixer exhibits measured up-conversion loss of 21–26 dB from 280 GHz to 325 GHz. Compared with other J-band mixers, this work achieves the lowest conversion loss with comparable IF bandwidth. The chip occupies $720 {mu}mathbf{m} times 380 mumathrm{m}$ including the testing pads.
报道了一种采用$0.13 {mu} mathbf{m}$ SiGe BiCMOS技术的低转换损耗j波段宽带四次谐波抽运混频器。研究了具有最小寄生效应的紧凑等效抗并联二极管对(APDP)，以降低转换损耗。该混频器由一个外部功率放大器驱动，在70 GHz至85 GHz范围内具有不低于13 dBm的LO功率，在280 GHz至325 GHz范围内测量到的上转换损耗为21-26 dB。与其他j波段混频器相比，该工作在同等中频带宽下实现了最低的转换损耗。芯片占用$720 mu mathbf{m}乘以$ 380 mu mathbf{m} $，包括测试垫。
{"title":"A 300 GHz 4th-Harmonic Mixer in $0.13 mu mathrm{m}$ SiGe BiCMOS Technology","authors":"Chen Wang, Debin Hou, Jixin Chen, W. Hong","doi":"10.1109/RFIT.2018.8524040","DOIUrl":"https://doi.org/10.1109/RFIT.2018.8524040","url":null,"abstract":"A J-band wideband fourth-harmonically pumped mixer with low conversion loss using $0.13 {mu} mathbf{m}$ SiGe BiCMOS technology is reported. Compact equivalent anti-parallel-diode-pair (APDP) with minimized parasitic effect is investigated for conversion loss reduction. Driven by an external power amplifier with no less than 13 dBm LO power from 70 GHz to 85 GHz, the mixer exhibits measured up-conversion loss of 21–26 dB from 280 GHz to 325 GHz. Compared with other J-band mixers, this work achieves the lowest conversion loss with comparable IF bandwidth. The chip occupies $720 {mu}mathbf{m} times 380 mumathrm{m}$ including the testing pads.","PeriodicalId":297122,"journal":{"name":"2018 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","volume":"45 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121865195","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-08-01DOI: 10.1109/RFIT.2018.8524088
R. Pokharel, Nusrat Jahan, A. Barakat
We analyze the quality factor $(boldsymbol{Q_{U}}/boldsymbol{Q_{K}})$ of three different types of defected ground structure (DGS) resonators including a series resonance in addition to the parallel one. Then, we implement the resonators to design high-performance K-band VCOs in $0.18 {mu} mathbf{m}$ CMOS Technology and finally, a low phase noise VCO at K-band is introduced.
{"title":"Dual Resonance Circuits by Defected Ground Structure Resonators for Low Phase Noise K-Band CMOS VCO","authors":"R. Pokharel, Nusrat Jahan, A. Barakat","doi":"10.1109/RFIT.2018.8524088","DOIUrl":"https://doi.org/10.1109/RFIT.2018.8524088","url":null,"abstract":"We analyze the quality factor $(boldsymbol{Q_{U}}/boldsymbol{Q_{K}})$ of three different types of defected ground structure (DGS) resonators including a series resonance in addition to the parallel one. Then, we implement the resonators to design high-performance K-band VCOs in $0.18 {mu} mathbf{m}$ CMOS Technology and finally, a low phase noise VCO at K-band is introduced.","PeriodicalId":297122,"journal":{"name":"2018 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129598500","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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