Pub Date : 2018-08-01DOI: 10.1109/RFIT.2018.8524108
K. Lu, Jyun-Jia Huang, Wei-Cheng Chen, Hong-Yeh Chang, Yu-Chi Wang
In this paper, we present a $boldsymbol{K}$-band frequency doubler using $0.15-{mu} mathbf{m}$ E-mode GaAs pHEMT with Gm-boosted technique. The input driving power decreases and the conversion gain enhances due to the boosted input voltage swing of the Gm-boosted technique. Furthermore, an autonomous circuit is employed for nonlinear stability analysis of the proposed frequency doubler, and the oscillation issue can be resolved. The chip size is $0.9 times 0.8 mathbf{mm}^{2}$. As the measured output frequency is from 37 to 43 GHz, the proposed frequency doubler exhibits a conversion gain of 0.9 dB with an input power of 0 dBm, a 15% fractional bandwidth, and a maximum saturated output power of higher than 2 dBm. The circuit performance can be compared with the prior art, and the proposed design methodology can be applied for some nonlinear microwave circuits.
{"title":"A $K$-Band Frequency Doubler in $0.15-mu mathrm{m}$ GaAs pHEMT with an Autonomous Circuit for Stability Analysis","authors":"K. Lu, Jyun-Jia Huang, Wei-Cheng Chen, Hong-Yeh Chang, Yu-Chi Wang","doi":"10.1109/RFIT.2018.8524108","DOIUrl":"https://doi.org/10.1109/RFIT.2018.8524108","url":null,"abstract":"In this paper, we present a $boldsymbol{K}$-band frequency doubler using $0.15-{mu} mathbf{m}$ E-mode GaAs pHEMT with Gm-boosted technique. The input driving power decreases and the conversion gain enhances due to the boosted input voltage swing of the Gm-boosted technique. Furthermore, an autonomous circuit is employed for nonlinear stability analysis of the proposed frequency doubler, and the oscillation issue can be resolved. The chip size is $0.9 times 0.8 mathbf{mm}^{2}$. As the measured output frequency is from 37 to 43 GHz, the proposed frequency doubler exhibits a conversion gain of 0.9 dB with an input power of 0 dBm, a 15% fractional bandwidth, and a maximum saturated output power of higher than 2 dBm. The circuit performance can be compared with the prior art, and the proposed design methodology can be applied for some nonlinear microwave circuits.","PeriodicalId":297122,"journal":{"name":"2018 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","volume":"66 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126871134","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-08-01DOI: 10.1109/RFIT.2018.8524124
Yu-Teng Chang, Hsin-Chia Lu
In this paper, we propose a CMOS gate-pump single side band (SSB) mixer at E-band. To improve conversion gain and efficiency, the transistors M1-M4 are biased at near class B region with the LO signal. We also carefully select LO power to get optimum conversion gain. Compared with traditional gate-pump mixer, the LO of this mixer is applied to the gate and the IF is applied to the source. This approach can assure that transistors are biased in class B region and also improve linearity. The peak conversion gain is −11.98 at 72 GHz. The measured LO-to-RF isolation is better than 35 dB and IRR is better than 29 dBc from 68 - 80 GHz. To our best knowledge, this SSB mixer has the highest IRR and good conversion gain at E-band among passive SSB mixers.
{"title":"An E-Band Gate-Pump SSB Mixer for Vital Signs Doppler Radar","authors":"Yu-Teng Chang, Hsin-Chia Lu","doi":"10.1109/RFIT.2018.8524124","DOIUrl":"https://doi.org/10.1109/RFIT.2018.8524124","url":null,"abstract":"In this paper, we propose a CMOS gate-pump single side band (SSB) mixer at E-band. To improve conversion gain and efficiency, the transistors M1-M4 are biased at near class B region with the LO signal. We also carefully select LO power to get optimum conversion gain. Compared with traditional gate-pump mixer, the LO of this mixer is applied to the gate and the IF is applied to the source. This approach can assure that transistors are biased in class B region and also improve linearity. The peak conversion gain is −11.98 at 72 GHz. The measured LO-to-RF isolation is better than 35 dB and IRR is better than 29 dBc from 68 - 80 GHz. To our best knowledge, this SSB mixer has the highest IRR and good conversion gain at E-band among passive SSB mixers.","PeriodicalId":297122,"journal":{"name":"2018 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","volume":"57 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116134811","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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