Pub Date : 2018-08-01DOI: 10.1109/RFIT.2018.8524073
Vishal Kumar, S. Koul, A. Basu
In this paper, a novel RF MEMS shunt switch with enhanced reliability is presented. A Ka-band shunt switch which is fabricated on a high resistivity silicon substrate implements a novel concept of tri-layer sandwich (insulator-Metal-insulator) membrane which results a lower actuation voltage of 10 Volt. The switch is actuated using electrostatic actuation mechanism and has the measured insertion loss and isolation of 1.94 dB and 18 dB at 40 GHz respectively. The switching speed of the switch is $76 mutext{sec}$ and works well up to one billion cycles of operation without deterioration in performance. The switch provides a solution for low voltage communication system applications.
{"title":"RF MEMS Switch with Enhanced Reliability","authors":"Vishal Kumar, S. Koul, A. Basu","doi":"10.1109/RFIT.2018.8524073","DOIUrl":"https://doi.org/10.1109/RFIT.2018.8524073","url":null,"abstract":"In this paper, a novel RF MEMS shunt switch with enhanced reliability is presented. A Ka-band shunt switch which is fabricated on a high resistivity silicon substrate implements a novel concept of tri-layer sandwich (insulator-Metal-insulator) membrane which results a lower actuation voltage of 10 Volt. The switch is actuated using electrostatic actuation mechanism and has the measured insertion loss and isolation of 1.94 dB and 18 dB at 40 GHz respectively. The switching speed of the switch is $76 mutext{sec}$ and works well up to one billion cycles of operation without deterioration in performance. The switch provides a solution for low voltage communication system applications.","PeriodicalId":297122,"journal":{"name":"2018 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129881477","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-08-01DOI: 10.1109/RFIT.2018.8524124
Yu-Teng Chang, Hsin-Chia Lu
In this paper, we propose a CMOS gate-pump single side band (SSB) mixer at E-band. To improve conversion gain and efficiency, the transistors M1-M4 are biased at near class B region with the LO signal. We also carefully select LO power to get optimum conversion gain. Compared with traditional gate-pump mixer, the LO of this mixer is applied to the gate and the IF is applied to the source. This approach can assure that transistors are biased in class B region and also improve linearity. The peak conversion gain is −11.98 at 72 GHz. The measured LO-to-RF isolation is better than 35 dB and IRR is better than 29 dBc from 68 - 80 GHz. To our best knowledge, this SSB mixer has the highest IRR and good conversion gain at E-band among passive SSB mixers.
{"title":"An E-Band Gate-Pump SSB Mixer for Vital Signs Doppler Radar","authors":"Yu-Teng Chang, Hsin-Chia Lu","doi":"10.1109/RFIT.2018.8524124","DOIUrl":"https://doi.org/10.1109/RFIT.2018.8524124","url":null,"abstract":"In this paper, we propose a CMOS gate-pump single side band (SSB) mixer at E-band. To improve conversion gain and efficiency, the transistors M1-M4 are biased at near class B region with the LO signal. We also carefully select LO power to get optimum conversion gain. Compared with traditional gate-pump mixer, the LO of this mixer is applied to the gate and the IF is applied to the source. This approach can assure that transistors are biased in class B region and also improve linearity. The peak conversion gain is −11.98 at 72 GHz. The measured LO-to-RF isolation is better than 35 dB and IRR is better than 29 dBc from 68 - 80 GHz. To our best knowledge, this SSB mixer has the highest IRR and good conversion gain at E-band among passive SSB mixers.","PeriodicalId":297122,"journal":{"name":"2018 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","volume":"57 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116134811","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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