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2006 68th ARFTG Conference: Microwave Measurement最新文献

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Comparison of multi-port VNA architectures — Measured results 多端口VNA架构的比较-测量结果
Pub Date : 2006-11-01 DOI: 10.1109/ARFTG.2006.8361659
T. Ruttan, B. Grossman, E. Fledell
Multi-port vector network analyzers (VNA) have become important measurement tools for the characterization of high frequency/high speed computer system and communications interconnects. These systems utilize many parallel channels of differential transmission lines to carry the high bandwidth data between devices. The need to measure the differential transmission line and crosstalk characteristics of these structures has driven the need for 4, 8, and 12 ports on microwave VNA's. 4-port VNA's have been commercially available for some time to address part of this need. In order to avoid additional complexity and cost these early architectures are unable to utilize the more recent, non-redundant calibration algorithms. These faster, more flexible algorithms can reduce the calibration and measurement time for multi-port devices at some cost to measurement accuracy. Through the evaluation of commercial verification devices after multiple calibrations, this paper illustrates that by comparing algorithms across two 4-port architectures, this compromise in accuracy may not be significant when compared to the savings in time and fewer standard connections.
多端口矢量网络分析仪(VNA)已成为高频/高速计算机系统和通信互连表征的重要测量工具。这些系统利用差分传输线的许多并行通道在设备之间传输高带宽数据。由于需要测量这些结构的差分传输线和串扰特性,因此需要在微波VNA上使用4,8和12个端口。4端口VNA已经商业化了一段时间,以解决这一需求的一部分。为了避免额外的复杂性和成本,这些早期的架构无法利用最新的非冗余校准算法。这些更快、更灵活的算法可以减少多端口设备的校准和测量时间,但会降低测量精度。通过对多次校准后的商用验证设备的评估,本文说明,通过比较两种4端口架构的算法,与节省时间和减少标准连接相比,这种精度上的妥协可能并不重要。
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引用次数: 4
Scanning near-field microwave microscopy for spatially localized metrology of nano-scale materials and devices 扫描近场微波显微镜用于纳米尺度材料和器件的空间局域计量
Pub Date : 2006-11-01 DOI: 10.1109/ARFTG.2006.8361653
V. Talanov, A. Schwartz
In the past decade near-field microwave microscopy has emerged as a novel approach to non-destructive imaging of materials' electrodynamic properties on sub-wavelength scales. In the near-field approach the spatial resolution is governed by the probe geometry rather than the wavelength of the radiation utilized. Therefore, even at microwave frequencies with wavelengths on the order of centimeters, sub-micron spatial resolution is possible.
在过去的十年中,近场微波显微镜已经成为一种在亚波长尺度上对材料电动力学特性进行无损成像的新方法。在近场方法中,空间分辨率由探头几何形状而不是所利用的辐射波长决定。因此,即使在波长在厘米数量级的微波频率下,亚微米级的空间分辨率也是可能的。
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引用次数: 0
True pulse load-pull measurement setup for high power transistors characterization 高功率晶体管特性的真脉冲负载-拉力测量装置
Pub Date : 2006-11-01 DOI: 10.1109/ARFTG.2006.8361671
J. Coupat, L. Tebaldini, J. Sirois, B. Noori, R. Wallace
In this paper we describe a new method of high power transistor characterization where a pulsed RF measurement system is integrated into a load-pull environment. The pulse synchronization mechanism between the vector network analyzer and, scalar power meter, and the rest of the system will be discussed, with emphasis on integration details and calibration fidelity. It will be shown that the system can characterize transistors with RF powers in excess of 200W under high reflection coefficient conditions.
在本文中,我们描述了一种将脉冲射频测量系统集成到负载-拉环境中的高功率晶体管表征的新方法。将讨论矢量网络分析仪和标量功率计之间的脉冲同步机制,以及系统的其余部分,重点是集成细节和校准保真度。结果表明,该系统可以在高反射系数条件下对射频功率超过200W的晶体管进行表征。
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引用次数: 5
An indirect non-invasive method for measuring input impedance and connection effects of an RFID tag antenna 一种用于测量RFID标签天线的输入阻抗和连接效果的间接非侵入性方法
Pub Date : 2006-11-01 DOI: 10.1109/ARFTG.2006.8361664
L. Mats, J. T. Cain, M. Mickle
This paper presents a non-destructive, non-invasive method for measuring the input impedance of a Radio Frequency Identification (RFID) transponder (tag) antenna at the operating frequency The derivation of the theoretical basis for determining the antenna impedance is presented along with the experimental measurement method using a Vector Network Analyzer (VNA) in conjunction with a Giga-Hertz Transverse Electromagnetic (GTEM) cell where the tag is located. By providing three different terminations to the antenna, the frequency dependent parameters can be measured in order to define a two-port network and determine the input impedance of the antenna. All measurements were performed using the actual RFID tag that operates in UHF (915 MHz) band. The resulting input impedance of the antenna was validated with the electromagnetic simulation software by constructing a model of the testing system and applying the proposed measurement method. The simulated results were found to be in agreement with the experimental measurements accounting for any discrepancies.
本文提出了一种在工作频率下测量射频识别(RFID)应答器(标签)天线输入阻抗的非破坏性、非侵入性方法,推导了确定天线阻抗的理论基础,并给出了使用矢量网络分析仪(VNA)与标签所在的千兆赫兹横向电磁(GTEM)单元相结合的实验测量方法。通过为天线提供三种不同的终端,可以测量频率相关参数,以定义双端口网络并确定天线的输入阻抗。所有测量都是使用在UHF (915 MHz)频段工作的实际RFID标签进行的。通过建立测试系统模型并应用所提出的测量方法,利用电磁仿真软件对天线的输入阻抗进行了验证。模拟结果与实验测量结果一致,排除了任何差异。
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引用次数: 3
An XML file format and a database for measurement data storage 用于测量数据存储的XML文件格式和数据库
Pub Date : 2006-11-01 DOI: 10.1109/ARFTG.2006.8361658
J. Teyssier, F. de Groote
Based on the standard and free XML format, a new file format is proposed for measurement data. An XML scheme dedicated to RF measurements is established, it ensures small and structured files with a strong grammatical check and the relevant semantic information embedded. The open structure of XML offers an easy upgrade of the file structure to any new type of measurement. In order to handle very large quantities of measurement data, a database structure is designed, this database stores exactly the same information fields as the XML file structure, so the total cross-interoperability between both storage methods allows efficient data management.
基于标准的、自由的XML格式,提出了一种新的测量数据文件格式。建立了一个专用于射频测量的XML方案,它确保具有强大语法检查和嵌入相关语义信息的小而结构化的文件。XML的开放结构提供了将文件结构升级到任何新的度量类型的简单方法。为了处理非常大量的测量数据,设计了一种数据库结构,该数据库存储与XML文件结构完全相同的信息字段,因此两种存储方法之间的完全交叉互操作性允许有效的数据管理。
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引用次数: 2
Design of scanning capacitance microscope 扫描电容显微镜的设计
Pub Date : 2006-11-01 DOI: 10.1109/ARFTG.2006.8361654
H. Tanbakuchi, M. Richter, M. Whitener
The design and manufacture of a scanning capacitance microscope (SCM) which is compatible with an atomic force microscope (AFM) for imaging of embedded nanostructure is discussed. The goals of the design are to use commercially available conductive AFM tips, and to incorporate it into an existing AFM system developed system.
讨论了用于嵌入式纳米结构成像的扫描电容显微镜(SCM)与原子力显微镜(AFM)兼容的设计与制造。设计的目标是使用市售的导电AFM尖端,并将其纳入现有的AFM系统开发系统。
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引用次数: 7
A hybrid probe-tip calibration for multiport vector network analyzers 多端口矢量网络分析仪的探针-尖端混合校准
Pub Date : 2006-11-01 DOI: 10.1109/ARFTG.2006.8361674
L. Hayden
This paper details the first commercial implementation [1] of a hybrid multiport vector network analyzer (VNA) calibration method suited to a probing environment. The new calibration method implements the enhanced Line-Reflect-Reflect-Match with automatic determination of load inductance [2]-[5] for a number of straight thru paths to fully determine all directivity, reflection tracking, and source and load match terms as well as the associated transmission tracking terms. The remaining transmission tracking terms are found from the use of an unknown but reciprocal thru structure using a process similar to that of the SOLR [6]-[7] calibration algorithm. Combining the LRRM and SOLR algorithms creates a robust, hybrid calibration method that is insensitive to the normal variation in one-port standard behavior associated with normal probe-placement variability [8]-[9]. The hybrid calibration is also insensitive to the inherently non-ideal thru behavior of coplanar waveguide bends or loop-back structures [10].
本文详细介绍了适合探测环境的混合多端口矢量网络分析仪(VNA)校准方法的第一个商业实现[1]。新的校准方法实现了增强的Line-Reflect-Reflect-Match,自动确定多个直通路径的负载电感[2]-[5],以充分确定所有指向性、反射跟踪、源和负载匹配项以及相关的传输跟踪项。剩余的传输跟踪项是通过使用与SOLR[6]-[7]校准算法类似的过程,从未知但互反的直通结构中找到的。结合LRRM和SOLR算法,创建了一种鲁棒的混合校准方法,该方法对与正常探针放置变化[8]-[9]相关的单端口标准行为的正常变化不敏感。混合校准对共面波导弯曲或回路结构[10]固有的非理想通过行为也不敏感。
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引用次数: 10
Load-pull measurement of transistor negative input impedance 晶体管负输入阻抗的负载-拉力测量
Pub Date : 2006-11-01 DOI: 10.1109/ARFTG.2006.8361669
F. de Groote, J. Verspecht, J. Teyssier, R. Quéré
This paper presents a measurement-based way of forecasting some transistor's nonlinear effects. For some particular output impedances of the passive load-pull setup, a strange behavior of the Pout/Pin slopes can be obtained. Thanks to the LSNA, the non linear input impedance can be measured, it is useful to explain this phenomenon. The time domain slopes of a GaN HEMT up to 3.5 W/mm are proposed at these particular loci.
本文提出了一种基于测量的预测晶体管非线性效应的方法。对于某些特定的无源负载-拉力装置的输出阻抗,可以得到一种奇怪的输出/引脚斜率的行为。由于LSNA可以测量非线性输入阻抗,这有助于解释这一现象。在这些特定位点,GaN HEMT的时域斜率高达3.5 W/mm。
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引用次数: 3
期刊
2006 68th ARFTG Conference: Microwave Measurement
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