Pub Date : 2000-06-10DOI: 10.1109/RFIC.2000.854463
A. Dearn, L. Devlin
This paper describes the application of the well-known Gilbert-cell mixer technique at MM-wave frequencies. A pseudomorphic HEMT monolithic design is described, in conjunction with a bondwire compensation technique, to produce low conversion loss (<4 dB) with low LO power at frequencies beyond 40 GHz.
{"title":"A MM-wave monolithic Gilbert-cell mixer","authors":"A. Dearn, L. Devlin","doi":"10.1109/RFIC.2000.854463","DOIUrl":"https://doi.org/10.1109/RFIC.2000.854463","url":null,"abstract":"This paper describes the application of the well-known Gilbert-cell mixer technique at MM-wave frequencies. A pseudomorphic HEMT monolithic design is described, in conjunction with a bondwire compensation technique, to produce low conversion loss (<4 dB) with low LO power at frequencies beyond 40 GHz.","PeriodicalId":305585,"journal":{"name":"2000 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium Digest of Papers (Cat. No.00CH37096)","volume":"15 4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-06-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125990942","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-06-10DOI: 10.1109/RFIC.2000.854447
B. Pillans, S. Eshelman, A. Malczewski, J. Ehmke, C. Goldsmith
RF MEMS switches provide a cheap and effective way to substantially reduce loss in RF and microwave MMICs. In this paper, progress in building low loss Ka-band phase shifters using RF MEMS capacitive switches is demonstrated. Using a switched transmission line 4-bit resonant phase shifter, an average insertion loss of 2.25 dB was obtained with better than 15 dB return loss. A similar 3-bit phase shifter produced an average insertion loss of 1.7 dB with better than 13 dB return loss. A simple, low loss way to package these devices is also presented.
{"title":"Ka-band RF MEMS phase shifters for phased array applications","authors":"B. Pillans, S. Eshelman, A. Malczewski, J. Ehmke, C. Goldsmith","doi":"10.1109/RFIC.2000.854447","DOIUrl":"https://doi.org/10.1109/RFIC.2000.854447","url":null,"abstract":"RF MEMS switches provide a cheap and effective way to substantially reduce loss in RF and microwave MMICs. In this paper, progress in building low loss Ka-band phase shifters using RF MEMS capacitive switches is demonstrated. Using a switched transmission line 4-bit resonant phase shifter, an average insertion loss of 2.25 dB was obtained with better than 15 dB return loss. A similar 3-bit phase shifter produced an average insertion loss of 1.7 dB with better than 13 dB return loss. A simple, low loss way to package these devices is also presented.","PeriodicalId":305585,"journal":{"name":"2000 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium Digest of Papers (Cat. No.00CH37096)","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-06-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124107162","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-06-10DOI: 10.1109/RFIC.2000.854438
F. Ellinger, U. Lott, W. Bachtold
A switchable GaAs MMIC cascode low noise amplifier for smart antenna combining at 5.2 GHz (HIPERLAN) is presented using a standard 0.6 /spl mu/m MESFET process. A gain of 12.3 dB and a noise figure of 2.4 dB are measured, drawing only 1.2 mA from a 1 V supply. A gain/P/sub dc/ figure of merit of 10 dB/mW is achieved, which to our knowledge is the highest ever reported at C-band.
{"title":"Ultra low power GaAs MMIC low noise amplifier for smart antenna combining at 5.2 GHz","authors":"F. Ellinger, U. Lott, W. Bachtold","doi":"10.1109/RFIC.2000.854438","DOIUrl":"https://doi.org/10.1109/RFIC.2000.854438","url":null,"abstract":"A switchable GaAs MMIC cascode low noise amplifier for smart antenna combining at 5.2 GHz (HIPERLAN) is presented using a standard 0.6 /spl mu/m MESFET process. A gain of 12.3 dB and a noise figure of 2.4 dB are measured, drawing only 1.2 mA from a 1 V supply. A gain/P/sub dc/ figure of merit of 10 dB/mW is achieved, which to our knowledge is the highest ever reported at C-band.","PeriodicalId":305585,"journal":{"name":"2000 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium Digest of Papers (Cat. No.00CH37096)","volume":"67 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-06-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122716557","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-06-10DOI: 10.1109/RFIC.2000.854424
J. Cao, X.W. Wang, C. Quek, R. Singh, H. Nakamura
This paper presents a novel power amplifier (PA) configuration (Class AB+C) which allows low quiescent current and thereby high PAE at low output power levels to be achieved without compromising high power linearity. The designed 800 MHz CDMA PA using quasi enhancement PHEMT process attained over 45% PAE, 0.8-watt output power and 33 dB gain at -43 dBc adjacent channel power rejection (ACPR), at a supply voltage of 3.2 V. The total quiescent current consumed is only 52 mA. In contrast, the conventional Class AB configuration required 82 mA to achieve similar performance.
{"title":"A 3.2 V, 45% efficient, novel Class AB+C CDMA MMIC power amplifier using quasi enhancement mode PHEMTs","authors":"J. Cao, X.W. Wang, C. Quek, R. Singh, H. Nakamura","doi":"10.1109/RFIC.2000.854424","DOIUrl":"https://doi.org/10.1109/RFIC.2000.854424","url":null,"abstract":"This paper presents a novel power amplifier (PA) configuration (Class AB+C) which allows low quiescent current and thereby high PAE at low output power levels to be achieved without compromising high power linearity. The designed 800 MHz CDMA PA using quasi enhancement PHEMT process attained over 45% PAE, 0.8-watt output power and 33 dB gain at -43 dBc adjacent channel power rejection (ACPR), at a supply voltage of 3.2 V. The total quiescent current consumed is only 52 mA. In contrast, the conventional Class AB configuration required 82 mA to achieve similar performance.","PeriodicalId":305585,"journal":{"name":"2000 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium Digest of Papers (Cat. No.00CH37096)","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-06-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123347492","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-06-10DOI: 10.1109/RFIC.2000.854445
A. E. Ashtiani, T. Gokdemir, A. Vilches, Z. Hu, I. Robertson, S. Marsh
This paper describes the design and performance of millimeter-wave balanced vector modulators employing the Marconi HBT MMIC technology. Two versions have been fabricated for operation at 38 GHz; the first employs normal Lange couplers whilst the second employs miniaturised microstrip couplers, which reduce the MMIC chip area by more than 40%. With a simple bias calibration technique the circuits achieve near-perfect constellations with negligible amplitude and phase errors over a wide bandwidth.
{"title":"Monolithic GaAs-InGaP HBT balanced vector modulators for millimeter-wave wireless systems","authors":"A. E. Ashtiani, T. Gokdemir, A. Vilches, Z. Hu, I. Robertson, S. Marsh","doi":"10.1109/RFIC.2000.854445","DOIUrl":"https://doi.org/10.1109/RFIC.2000.854445","url":null,"abstract":"This paper describes the design and performance of millimeter-wave balanced vector modulators employing the Marconi HBT MMIC technology. Two versions have been fabricated for operation at 38 GHz; the first employs normal Lange couplers whilst the second employs miniaturised microstrip couplers, which reduce the MMIC chip area by more than 40%. With a simple bias calibration technique the circuits achieve near-perfect constellations with negligible amplitude and phase errors over a wide bandwidth.","PeriodicalId":305585,"journal":{"name":"2000 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium Digest of Papers (Cat. No.00CH37096)","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-06-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115381208","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-06-10DOI: 10.1109/RFIC.2000.854422
B. Minnis, P. Moore, A. Payne, A. C. Caswell, M. Barnard
The design of a polyphase receiver for GSM is presented. Compared with a superhet solution, it offers similar performance but is very much easier to integrate on silicon without the need for off-chip channel filters. Compared with a zero-IF solution, a substantial improvement in performance is achieved by virtue of eliminating the problems with DC offsets and IP/sub 2/ generation. The use of log-domain signal processing leads to simplifications in the digital baseband and eliminates the need for AGC.
{"title":"A low-IF polyphase receiver for GSM using log-domain signal processing","authors":"B. Minnis, P. Moore, A. Payne, A. C. Caswell, M. Barnard","doi":"10.1109/RFIC.2000.854422","DOIUrl":"https://doi.org/10.1109/RFIC.2000.854422","url":null,"abstract":"The design of a polyphase receiver for GSM is presented. Compared with a superhet solution, it offers similar performance but is very much easier to integrate on silicon without the need for off-chip channel filters. Compared with a zero-IF solution, a substantial improvement in performance is achieved by virtue of eliminating the problems with DC offsets and IP/sub 2/ generation. The use of log-domain signal processing leads to simplifications in the digital baseband and eliminates the need for AGC.","PeriodicalId":305585,"journal":{"name":"2000 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium Digest of Papers (Cat. No.00CH37096)","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-06-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115722109","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-06-10DOI: 10.1109/RFIC.2000.854434
S. Pennisi, S. Scaccianoce, G. Palmisano
A new approach to the design of variable-gain low noise amplifiers is presented in which input and output signals can be switched among circuit branches with different features. It can be arranged for high linearity performance and/or different frequency shapes. Moreover, it allows matching conditions for multi-band applications to be met. As a design example, a 900 MHz three-gain level low noise amplifier was designed in a 20 GHz bipolar technology. The circuit exhibits a maximum gain and a noise figure of 26 dB and 2.1 dB, respectively and provides accurate input and output matching.
{"title":"A new design approach for variable-gain low noise amplifiers","authors":"S. Pennisi, S. Scaccianoce, G. Palmisano","doi":"10.1109/RFIC.2000.854434","DOIUrl":"https://doi.org/10.1109/RFIC.2000.854434","url":null,"abstract":"A new approach to the design of variable-gain low noise amplifiers is presented in which input and output signals can be switched among circuit branches with different features. It can be arranged for high linearity performance and/or different frequency shapes. Moreover, it allows matching conditions for multi-band applications to be met. As a design example, a 900 MHz three-gain level low noise amplifier was designed in a 20 GHz bipolar technology. The circuit exhibits a maximum gain and a noise figure of 26 dB and 2.1 dB, respectively and provides accurate input and output matching.","PeriodicalId":305585,"journal":{"name":"2000 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium Digest of Papers (Cat. No.00CH37096)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-06-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124800016","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-06-10DOI: 10.1109/RFIC.2000.854409
J. Strange, S. Atkinson
The use of direct conversion receiver topologies has been marked by many technical problems, particularly when used in a TDMA environment. This paper describes a receiver architecture that overcomes many of the traditional problems associated with direct conversion. This architecture has been applied in the design of a GSM multi-band transceiver that also features a development of the offset PLL transmitter together with a fast locking fractional-N synthesizer.
{"title":"A direct conversion transceiver for multi-band GSM application","authors":"J. Strange, S. Atkinson","doi":"10.1109/RFIC.2000.854409","DOIUrl":"https://doi.org/10.1109/RFIC.2000.854409","url":null,"abstract":"The use of direct conversion receiver topologies has been marked by many technical problems, particularly when used in a TDMA environment. This paper describes a receiver architecture that overcomes many of the traditional problems associated with direct conversion. This architecture has been applied in the design of a GSM multi-band transceiver that also features a development of the offset PLL transmitter together with a fast locking fractional-N synthesizer.","PeriodicalId":305585,"journal":{"name":"2000 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium Digest of Papers (Cat. No.00CH37096)","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-06-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131256818","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-06-10DOI: 10.1109/RFIC.2000.854414
J. Mondal, E. Bogus, S. Ahmed, G. Dietz, P. Sahm, T. Nguyen, M. Yusim
Development and hardware performance of a 39 GHz millimeter wave (MM-wave) transceiver that uses highly integrated Monolithic Microwave Integrated Circuits (MMIC) and a multilayer MM-wave board are described. The design process involved virtual prototyping using behavioral models of the transmit-receive functions and the MM-wave interconnects on a multilayer Multi Chip Assembly (MCA) substrate, The paper describes optimum system partitioning, specification generation of various blocks that include highly integrated MMICs, MCA interconnects, and the integrated antenna. The MMICs and MCA were designed and fabricated after going through specification flow down and capability up cycles using virtual prototyping. The transceiver modules have been demonstrated for short distance communication links at data rates exceeding 1 Mbps. The data rate is limited by the application software used. To our knowledge this is the first time virtual prototyping has been applied to a complex MM-wave system that involves highly integrated MMIC and MCA.
{"title":"Applications of virtual modeling to the development of a 39 GHz MMIC transceiver on multilayer Multi Chip Assembly (MCA) substrate","authors":"J. Mondal, E. Bogus, S. Ahmed, G. Dietz, P. Sahm, T. Nguyen, M. Yusim","doi":"10.1109/RFIC.2000.854414","DOIUrl":"https://doi.org/10.1109/RFIC.2000.854414","url":null,"abstract":"Development and hardware performance of a 39 GHz millimeter wave (MM-wave) transceiver that uses highly integrated Monolithic Microwave Integrated Circuits (MMIC) and a multilayer MM-wave board are described. The design process involved virtual prototyping using behavioral models of the transmit-receive functions and the MM-wave interconnects on a multilayer Multi Chip Assembly (MCA) substrate, The paper describes optimum system partitioning, specification generation of various blocks that include highly integrated MMICs, MCA interconnects, and the integrated antenna. The MMICs and MCA were designed and fabricated after going through specification flow down and capability up cycles using virtual prototyping. The transceiver modules have been demonstrated for short distance communication links at data rates exceeding 1 Mbps. The data rate is limited by the application software used. To our knowledge this is the first time virtual prototyping has been applied to a complex MM-wave system that involves highly integrated MMIC and MCA.","PeriodicalId":305585,"journal":{"name":"2000 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium Digest of Papers (Cat. No.00CH37096)","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-06-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116935283","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-06-10DOI: 10.1109/RFIC.2000.854433
D. Zoschg, W. Wilhelm, J. Bock, H. Knapp, M. Wurzer, K. Aufinger, H. Wohlmuth, A. Scholtz
Monolithic LNAs for frequencies of 2, 6, and 10 GHz have been fabricated in production-near silicon bipolar technology (0.4 /spl mu/m/65 GHz, f/sub max/). Measured results in 50 /spl Omega/ noise figure and gain are 1.1 dB/28 dB at 1.9 GHz, 1.8 dB/26 dB at 5.6 GHz, 2.8 dB/21.1 dB at 9.5 GHz, and 2.5 dB/16.6 dB at 10 GHz. These noise results are state of the art for homojunction silicon bipolar technologies and are able to compete with the best results for minimum noise figures published for SiGe technologies.
{"title":"Monolithic LNAs up to 10 GHz in a production-near 65 GHz f/sub max/ silicon bipolar technology","authors":"D. Zoschg, W. Wilhelm, J. Bock, H. Knapp, M. Wurzer, K. Aufinger, H. Wohlmuth, A. Scholtz","doi":"10.1109/RFIC.2000.854433","DOIUrl":"https://doi.org/10.1109/RFIC.2000.854433","url":null,"abstract":"Monolithic LNAs for frequencies of 2, 6, and 10 GHz have been fabricated in production-near silicon bipolar technology (0.4 /spl mu/m/65 GHz, f/sub max/). Measured results in 50 /spl Omega/ noise figure and gain are 1.1 dB/28 dB at 1.9 GHz, 1.8 dB/26 dB at 5.6 GHz, 2.8 dB/21.1 dB at 9.5 GHz, and 2.5 dB/16.6 dB at 10 GHz. These noise results are state of the art for homojunction silicon bipolar technologies and are able to compete with the best results for minimum noise figures published for SiGe technologies.","PeriodicalId":305585,"journal":{"name":"2000 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium Digest of Papers (Cat. No.00CH37096)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-06-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116947683","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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