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2000 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium Digest of Papers (Cat. No.00CH37096)最新文献

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A low power 900 MHz transmitter IC with audio baseband for ISM applications using 0.25 /spl mu/m BiCMOS 一款低功耗900 MHz带音频基带的发射IC,适用于使用0.25 /spl mu/m BiCMOS的ISM应用
K. Huehne, S. Bader, D. Coffing, J. Durec, R. Hester, D. Lovelace, E. Main, P. Ovalle, Ruxi Tang, D. Welty, R. Williams, K. Wortel
The audio processing function is combined with a 0 dBm transmitter using 0.25 /spl mu/m BiCMOS technology for portable wireless applications. Reference suppression is better than 60 dB. It operates over 1.8 to 2.8 V and consumes 26 mA. As part of a highly integrated two-chip transceiver system, it enables a low cost solution for analog cordless telephones.
音频处理功能与使用0.25 /spl mu/m BiCMOS技术的0 dBm发射器相结合,适用于便携式无线应用。基准抑制优于60 dB。它的工作电压为1.8至2.8 V,功耗为26 mA。作为高度集成的双芯片收发器系统的一部分,它为模拟无绳电话提供了低成本的解决方案。
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引用次数: 3
A completely integrated 1.9 GHz receiver front-end with monolithic image reject filter and VCO 一个完全集成的1.9 GHz接收机前端,带有单片图像抑制滤波器和VCO
J. Rogers, J. Macedo, C. Plett
A 19 GHz monolithic superheterodyne receiver front-end with 300 MHz IF, on-chip tunable image reject filter and VCO is presented. The receiver was fabricated on a 0.5 um bipolar process. The 2.2 GHz VCO was realized with ground-shielded inductors. The performance is as follows: conversion gain: 25.6 dB, noise figure: 4.5 dB, image rejection: 65 dB, and phase noise of -103 dBc/Hz at 100 kHz offset. The LO-IF isolation improved compared to a previously fabricated front-end with off-chip VCO. This receiver front-end has NF, linearity, and phase noise suitable for DCS-1800.
提出了一种采用300 MHz中频、片上可调图像抑制滤波器和压控振荡器的19ghz单片超外差接收机前端。该接收器采用0.5 um双极工艺制备。2.2 GHz压控振荡器采用接地屏蔽电感实现。性能如下:转换增益:25.6 dB,噪声系数:4.5 dB,图像抑制:65 dB, 100 kHz偏移时相位噪声为-103 dBc/Hz。与先前制造的带有片外VCO的前端相比,LO-IF隔离得到了改善。该接收机前端具有适合DCS-1800的NF、线性和相位噪声。
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引用次数: 13
Broadband tuner on a chip for cable modem, HDTV, and legacy analog standards 用于电缆调制解调器、高清电视和传统模拟标准的芯片上的宽带调谐器
Bud Taddiken, Will Ezell, Eric Mumper, Ken Clayton, Jim Douglass, Vince Birleson, Jose Esquivel, O. Werther, Angelika Schneider, Jay Bolton, Bill White, Geoff Dawe, Mario Lafuente, Kurt Richter, Joel Michon, Javier Ruiz, John Norsworthy
Market requirements and implementation of the first broadband tuner on a chip are described. This IC is built in a 0.8-/spl mu/m BICMOS process and includes the entire signal path as well as integrated PLLs. The architecture and design are discussed at the block and transistor levels. Measured results are shown.
描述了第一种芯片上宽带调谐器的市场需求和实现。该IC采用0.8-/spl mu/m BICMOS工艺,包括整个信号路径以及集成的锁相环。在模块级和晶体管级讨论了结构和设计。测量结果如下所示。
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引用次数: 7
An introduction to IEEE 802.11 wireless LANs 介绍IEEE 802.11无线局域网
S. V. Saliga
As the capability of wireless LAN systems improves, interest in these systems is soaring. In this paper, an overview of wireless LANs is presented which will include broad, system level topics relating directly to IEEE 802.11 systems.
随着无线局域网系统性能的提高,人们对这些系统的兴趣正在飙升。本文概述了无线局域网,其中包括与IEEE 802.11系统直接相关的广泛的系统级主题。
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引用次数: 21
Fully differential dual-band image reject receiver in SiGe BiCMOS SiGe BiCMOS全差分双频图像抑制接收机
J. Imbornone, J.-M. Mourant, T. Tewksbury
A fully differential, dual-band, image reject receiver chip is described. SiGe BiCMOS (ft=45 GHz) enables high dynamic range with NF=2.8/4.1 dB (900 MHz/1.8 GHz) including requisite balun loss, IIP3 >-17 dBm, Gp=22 dB, and image rejection >40 dB at 2.7V (87mW).
描述了一种全差分、双频、图像抑制接收器芯片。SiGe BiCMOS (ft=45 GHz)可实现高动态范围,NF=2.8/4.1 dB (900 MHz/1.8 GHz),包括必要的平衡损耗,IIP3 >-17 dBm, Gp=22 dB,以及2.7V (87mW)下的图像抑制>40 dB。
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引用次数: 26
The current status of RF and microwave amplifier intermodulation performance 射频与微波放大器互调性能的现状
C.S. Aitchisan
This paper reviews the intermodulation performance of RF and microwave amplifiers by reference to some recently published papers.
本文参考近年来发表的一些论文,对射频放大器和微波放大器的互调性能进行了综述。
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引用次数: 15
A 0.5-16 GHz capacitively coupled HBT medium power amplifier MMIC with active bias regulation 一种有源偏置调节的0.5-16 GHz电容耦合HBT中功率放大器MMIC
K. Kobayashi, A. Oki, A. Gutierrez-Aitken, E. Kaneshiro, P. Grossman, K. Sato, T. Block, D. Streit
This work describes a 0.5-16 GHz capacitively coupled HBT medium power distributed amplifier targeted for 10 Gb/s fiber-optic transmitter applications. The amplifier obtains a nominal 8-9 dB gain from 500 MHz to 16 GHz with frequency capability down to baseband, and delivers as much as 19 dBm of output power. With a 10 Gb/s PRBS signal applied, the MMIC obtains a peak-to-peak output voltage of >3 V with a clear eye opening while consuming a Pdc of only 420 mW or half the dc power of previous HBT mod driver ICs.
本工作描述了一种针对10gb /s光纤发射机应用的0.5- 16ghz电容耦合HBT中功率分布式放大器。该放大器在500 MHz至16 GHz范围内获得8-9 dB的标称增益,频率能力低至基带,输出功率高达19 dBm。在施加10gb /s PRBS信号的情况下,MMIC获得了> 3v的峰对峰输出电压,同时消耗的Pdc仅为420 mW或以前HBT模驱动ic直流功率的一半。
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引用次数: 1
A fully integrated SiGe bipolar 1.4 GHz Bluetooth voltage-controlled oscillator 一个完全集成的SiGe双极1.4 GHz蓝牙压控振荡器
B. Klepser, J. Kucera
A 2.4 GHz fully monolithic voltage-controlled oscillator for the Bluetooth wireless data communication standard is presented for the first time using a commercially available SiGe bipolar technology. An oscillator phase noise of -129 dBc/Hz is achieved at 3 MHz offset, with a tuning range of 500 MHz and a supply current of 6 mA at 3 V.
采用商用SiGe双极技术,首次提出了用于蓝牙无线数据通信标准的2.4 GHz全单片压控振荡器。在3mhz偏置时,振荡器相位噪声为-129 dBc/Hz,调谐范围为500mhz,电源电流为6ma,电压为3v。
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引用次数: 9
A base-band to RF BiCMOS transmitter RFIC for dual-band CDMA/AMPS wireless handsets 用于双频CDMA/AMPS无线手机的基带到射频BiCMOS发射机RFIC
K. Sahota, K. Gard, B. Walker, S. Szabo, Wenjun Su, E. Zeisel
A single chip, base-band to RF, BiCMOS transmitter RFIC (RFT3100) for dual-band CDMA/AMPS wireless handsets is presented. The RFIC contains base-band I/Q modulator, UHF VCO buffer, IF PLL, VCO, IF and RF VGAs, image rejection RF upconverter, dual driver amplifiers for cellular and PCS bands, and a three wire serial interface to control the chip. The chip operates from a 2.7 to 3.3 V supply, a temperature range of -30 to 85/spl deg/C, and is packaged in a 32 lead 5/spl times/5 mm bump chip carrier (BCC) package. The chip is fabricated using a 18 GHz (analog NPN ft), 0.5 um BiCMOS process.
提出了一种用于双频CDMA/AMPS无线手机的单片基带到射频BiCMOS发射机RFIC (RFT3100)。该RFIC包含基带I/Q调制器、UHF VCO缓冲器、中频锁相环、VCO、中频和RF VGAs、图像抑制RF上转换器、用于蜂窝和pc频段的双驱动放大器,以及用于控制芯片的三线串行接口。该芯片的工作电压为2.7至3.3 V,温度范围为-30至85/spl℃,封装在32引线5/spl倍/5毫米凸点芯片载体(BCC)封装中。该芯片采用18 GHz(模拟NPN英尺),0.5 um BiCMOS工艺制造。
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引用次数: 5
A novel RFIC for UHF oscillators 一种用于UHF振荡器的新型RFIC
U. Rohde
In the past, several successful attempts were made in designing low phase noise oscillators, including noise canceling techniques. Since silicon and silicon germanium transistors with high gain are not available in PNP polarity, it has been difficult to find appropriate biasing schemes. This paper shows a novel circuit using NPN transistors, which meets all the required goals and has been validated in discrete form and is currently in production at the Motorola silicon germanium foundry.
过去,在设计低相位噪声振荡器方面进行了一些成功的尝试,包括噪声消除技术。由于高增益的硅和硅锗晶体管不能用于PNP极性,因此很难找到合适的偏置方案。本文展示了一种新颖的NPN晶体管电路,满足了所有要求,并已在离散形式进行了验证,目前正在摩托罗拉硅锗铸造厂生产。
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引用次数: 9
期刊
2000 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium Digest of Papers (Cat. No.00CH37096)
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