Pub Date : 2000-06-10DOI: 10.1109/RFIC.2000.854456
H. Feng, Ke Gong, Albert Wang
This paper reports two advanced Electro-Static Discharge (ESD) protection structures suitable for RFICs and a comparison study of influences of ESD parasitic capacitance (C/sub ESD/) on high-speed circuits. For a 4 GHz ring-oscillator and a low-power high-speed op-amp circuits, it was observed that C/sub ESD/ may corrupt high-speed performance significantly and new ESD structures can recover the corruption by 80%.
{"title":"A comparison study of ESD protection for RFICs: performance vs. parasitics","authors":"H. Feng, Ke Gong, Albert Wang","doi":"10.1109/RFIC.2000.854456","DOIUrl":"https://doi.org/10.1109/RFIC.2000.854456","url":null,"abstract":"This paper reports two advanced Electro-Static Discharge (ESD) protection structures suitable for RFICs and a comparison study of influences of ESD parasitic capacitance (C/sub ESD/) on high-speed circuits. For a 4 GHz ring-oscillator and a low-power high-speed op-amp circuits, it was observed that C/sub ESD/ may corrupt high-speed performance significantly and new ESD structures can recover the corruption by 80%.","PeriodicalId":305585,"journal":{"name":"2000 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium Digest of Papers (Cat. No.00CH37096)","volume":"721 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-06-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131880436","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-06-10DOI: 10.1109/RFIC.2000.854425
M. Nakayama, K. Motoyoshi, T. Kitazawa, K. Tara, M. Hagio
This paper presents a two step power control driver MMIC for wideband-CDMA handsets. It has the self current control function coupled with the output power level. It realizes low current consumption of 12 mA at an average output power level (Pave) without any sacrifice of high performance at the high output power level. It greatly contributes to the realization of compact and low power consumption W-CDMA handsets.
{"title":"An ultra low current consumption two step power control driver MMIC with self current control for wideband-CDMA handsets","authors":"M. Nakayama, K. Motoyoshi, T. Kitazawa, K. Tara, M. Hagio","doi":"10.1109/RFIC.2000.854425","DOIUrl":"https://doi.org/10.1109/RFIC.2000.854425","url":null,"abstract":"This paper presents a two step power control driver MMIC for wideband-CDMA handsets. It has the self current control function coupled with the output power level. It realizes low current consumption of 12 mA at an average output power level (Pave) without any sacrifice of high performance at the high output power level. It greatly contributes to the realization of compact and low power consumption W-CDMA handsets.","PeriodicalId":305585,"journal":{"name":"2000 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium Digest of Papers (Cat. No.00CH37096)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-06-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133740282","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-06-10DOI: 10.1109/RFIC.2000.854446
H. Siweris, A. Werthof, H. Tischer, T. Grave, H. Werthmann, R. Rasshofer, W. Kellner
A chip set consisting of three GaAs HEMT MMICs (voltage-controlled oscillator, medium power amplifier, subharmonic mixer) and a discrete Si Schottky mixer diode has been developed for 77 GHz automotive radar systems. It facilitates the realization of a high performance millimeter-wave radar front-end with a minimum amount of chip area and, consequently, low production costs.
{"title":"A mixed Si and GaAs chip set for millimeter-wave automotive radar front-ends","authors":"H. Siweris, A. Werthof, H. Tischer, T. Grave, H. Werthmann, R. Rasshofer, W. Kellner","doi":"10.1109/RFIC.2000.854446","DOIUrl":"https://doi.org/10.1109/RFIC.2000.854446","url":null,"abstract":"A chip set consisting of three GaAs HEMT MMICs (voltage-controlled oscillator, medium power amplifier, subharmonic mixer) and a discrete Si Schottky mixer diode has been developed for 77 GHz automotive radar systems. It facilitates the realization of a high performance millimeter-wave radar front-end with a minimum amount of chip area and, consequently, low production costs.","PeriodicalId":305585,"journal":{"name":"2000 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium Digest of Papers (Cat. No.00CH37096)","volume":"63 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-06-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130925913","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-06-10DOI: 10.1109/RFIC.2000.854437
Y.H. Wu, A. Chin, C. Liang, C.C. Wu
The measured RF performance of 0.5, 0.25, and 0.18 /spl mu/m MOSFETs gradually saturates as scaling down occurs, which can be explained by the derived analytical equation and simulation. The source-drain overlap capacitance, C/sub gd/, and non-quasi-static effect are the main factors but scale much slower than L/sub g/.
{"title":"The performance limiting factors as RF MOSFETs scale down","authors":"Y.H. Wu, A. Chin, C. Liang, C.C. Wu","doi":"10.1109/RFIC.2000.854437","DOIUrl":"https://doi.org/10.1109/RFIC.2000.854437","url":null,"abstract":"The measured RF performance of 0.5, 0.25, and 0.18 /spl mu/m MOSFETs gradually saturates as scaling down occurs, which can be explained by the derived analytical equation and simulation. The source-drain overlap capacitance, C/sub gd/, and non-quasi-static effect are the main factors but scale much slower than L/sub g/.","PeriodicalId":305585,"journal":{"name":"2000 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium Digest of Papers (Cat. No.00CH37096)","volume":"48 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-06-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134009177","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-06-10DOI: 10.1109/RFIC.2000.854411
K. Ang, M. Chongcheawchamnan, I. Robertson
Single-ended and balanced monolithic mixers for direct conversion at V-band are presented. Resistive PHEMTs are employed with reactive feedback between gate and drain, and IF extraction from the source. Low conversion loss is achieved with high isolation and low intermodulation. Successful demodulation of a 1 Mbit/s BPSK signal at 60 GHz demonstrates the technique for millimeter wave direct conversion receivers.
{"title":"Monolithic resistive mixers for 60 GHz direct conversion receivers","authors":"K. Ang, M. Chongcheawchamnan, I. Robertson","doi":"10.1109/RFIC.2000.854411","DOIUrl":"https://doi.org/10.1109/RFIC.2000.854411","url":null,"abstract":"Single-ended and balanced monolithic mixers for direct conversion at V-band are presented. Resistive PHEMTs are employed with reactive feedback between gate and drain, and IF extraction from the source. Low conversion loss is achieved with high isolation and low intermodulation. Successful demodulation of a 1 Mbit/s BPSK signal at 60 GHz demonstrates the technique for millimeter wave direct conversion receivers.","PeriodicalId":305585,"journal":{"name":"2000 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium Digest of Papers (Cat. No.00CH37096)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-06-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114169231","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-06-10DOI: 10.1109/RFIC.2000.854416
J. Plouchart, H. Ainspan, M. Soyuer, A. Ruehli
A fully integrated and differential SiGe VCO was designed for 5 GHz wireless applications. The measured phase noise is -98 dBc/Hz at 100 kHz offset off the 5 GHz carrier. It has a tuning range of 12.3% with a control voltage from 0 to 3 V, and a figure of merit of more than -180 dBc/Hz, The current drawn from 3 V is 5 mA for the core and 2.2 mA for the output buffers.
{"title":"A fully-monolithic SiGe differential voltage-controlled oscillator for 5 GHz wireless applications","authors":"J. Plouchart, H. Ainspan, M. Soyuer, A. Ruehli","doi":"10.1109/RFIC.2000.854416","DOIUrl":"https://doi.org/10.1109/RFIC.2000.854416","url":null,"abstract":"A fully integrated and differential SiGe VCO was designed for 5 GHz wireless applications. The measured phase noise is -98 dBc/Hz at 100 kHz offset off the 5 GHz carrier. It has a tuning range of 12.3% with a control voltage from 0 to 3 V, and a figure of merit of more than -180 dBc/Hz, The current drawn from 3 V is 5 mA for the core and 2.2 mA for the output buffers.","PeriodicalId":305585,"journal":{"name":"2000 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium Digest of Papers (Cat. No.00CH37096)","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-06-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123973203","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-06-10DOI: 10.1109/RFIC.2000.854442
Sorin P. Voinigescu, D. Marchesan, M. A. Copeland
A family of low-phase noise, monolithic inductor-varactor SiGe-HBT VCOs in the 20 GHz to 30 GHz band was fabricated in a production SiGe technology. The unbuffered differential VCOs have 10-15% tuning range and deliver -3 to 2 dBm directly into each of the 50 /spl Omega/ loads, and 0 dBm differentially. Phase noise is as low as -101 dBc/Hz at 1 MHz from the 20 GHz carrier and -87 dBc/Hz at 100 kHz from the 26 GHz carrier. The VCO core draws 10 mA from a 5 V supply.
{"title":"A family of monolithic inductor-varactor SiGe-HBT VCOs for 20 GHz to 30 GHz LMDS and fiber-optic receiver applications","authors":"Sorin P. Voinigescu, D. Marchesan, M. A. Copeland","doi":"10.1109/RFIC.2000.854442","DOIUrl":"https://doi.org/10.1109/RFIC.2000.854442","url":null,"abstract":"A family of low-phase noise, monolithic inductor-varactor SiGe-HBT VCOs in the 20 GHz to 30 GHz band was fabricated in a production SiGe technology. The unbuffered differential VCOs have 10-15% tuning range and deliver -3 to 2 dBm directly into each of the 50 /spl Omega/ loads, and 0 dBm differentially. Phase noise is as low as -101 dBc/Hz at 1 MHz from the 20 GHz carrier and -87 dBc/Hz at 100 kHz from the 26 GHz carrier. The VCO core draws 10 mA from a 5 V supply.","PeriodicalId":305585,"journal":{"name":"2000 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium Digest of Papers (Cat. No.00CH37096)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-06-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122199223","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-06-10DOI: 10.1109/RFIC.2000.854426
C. Duvanaud, V. Serru, F. Robin, E. Leclerc
The power PHEMT technology presented allows one to achieve high power (35.5 dBm) and PAE (60%) for a low drain bias of 3.5 volts and a gate bias of zero volts. For such operating conditions, analyses are conducted to adjust the load termination at the signal harmonics.
{"title":"A single supply very high power and efficiency integrated PHEMT amplifier for GSM applications","authors":"C. Duvanaud, V. Serru, F. Robin, E. Leclerc","doi":"10.1109/RFIC.2000.854426","DOIUrl":"https://doi.org/10.1109/RFIC.2000.854426","url":null,"abstract":"The power PHEMT technology presented allows one to achieve high power (35.5 dBm) and PAE (60%) for a low drain bias of 3.5 volts and a gate bias of zero volts. For such operating conditions, analyses are conducted to adjust the load termination at the signal harmonics.","PeriodicalId":305585,"journal":{"name":"2000 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium Digest of Papers (Cat. No.00CH37096)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-06-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125450893","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/rfic.2000.854419
Chih-Ming Hung, B. Floyd, K. O
A 5.35-GHz monolithic VCO and a prescaler have been fabricated in a 0.25-/spl mu/m CMOS process. The VCO has a tuning range of 336 MHz and phase noise of -117 dBc/Hz at a 1-MHz offset and 7-mW power consumption. The low phase noise is achieved by using only PMOS transistors in the VCO core and by optimizing the resonator layout. The prescaler utilizes a variation of the source coupled logic and consumes only 4.1 mW at VDD=1.5 V and 5.4 GHz. A second prescaler operating at 9.96 GHz and 2.5-V VDD is also demonstrated.
{"title":"A fully integrated 5.35-GHz CMOS VCO and a prescaler","authors":"Chih-Ming Hung, B. Floyd, K. O","doi":"10.1109/rfic.2000.854419","DOIUrl":"https://doi.org/10.1109/rfic.2000.854419","url":null,"abstract":"A 5.35-GHz monolithic VCO and a prescaler have been fabricated in a 0.25-/spl mu/m CMOS process. The VCO has a tuning range of 336 MHz and phase noise of -117 dBc/Hz at a 1-MHz offset and 7-mW power consumption. The low phase noise is achieved by using only PMOS transistors in the VCO core and by optimizing the resonator layout. The prescaler utilizes a variation of the source coupled logic and consumes only 4.1 mW at VDD=1.5 V and 5.4 GHz. A second prescaler operating at 9.96 GHz and 2.5-V VDD is also demonstrated.","PeriodicalId":305585,"journal":{"name":"2000 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium Digest of Papers (Cat. No.00CH37096)","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134358151","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/rfic.2000.854449
Z. Nosal
The paper investigates the problem of minimizing bias power for the low noise GaAs amplifiers. The model of the amplifier parameters versus transistor gate width is presented and used to derive the conditions for noise optimization. It is shown that optimum FETs are rather wide and may operate at very low current densities. Complete amplifier stages with only 3-5 mW bias power are feasible at 2 GHz with noise figures below 1 dB.
{"title":"Design of GaAs MMIC transistors for the low-power low noise applications","authors":"Z. Nosal","doi":"10.1109/rfic.2000.854449","DOIUrl":"https://doi.org/10.1109/rfic.2000.854449","url":null,"abstract":"The paper investigates the problem of minimizing bias power for the low noise GaAs amplifiers. The model of the amplifier parameters versus transistor gate width is presented and used to derive the conditions for noise optimization. It is shown that optimum FETs are rather wide and may operate at very low current densities. Complete amplifier stages with only 3-5 mW bias power are feasible at 2 GHz with noise figures below 1 dB.","PeriodicalId":305585,"journal":{"name":"2000 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium Digest of Papers (Cat. No.00CH37096)","volume":"44 3","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121015764","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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