Pub Date : 2015-12-01DOI: 10.1109/IMARC.2015.7411448
N. Suematsu, S. Kameda, M. Motoyoshi
In this paper, we proposes the usage of direct RF undersampling receiver for digital beam forming in high-SHF (over 6GHz) band. The direct RF configuration can be reduce the size of individual receiver attached to each antenna elements and can be realize digital beam forming functionality which is applicable to Massive Multiple-Input-Multiple-Output (MIMO) in 5G system. Recent development of direct RF undersampling S/H CMOS IC in high-SHF band is also introduced.
{"title":"Direct RF undersampling receiver for high-SHF band digital beam forming","authors":"N. Suematsu, S. Kameda, M. Motoyoshi","doi":"10.1109/IMARC.2015.7411448","DOIUrl":"https://doi.org/10.1109/IMARC.2015.7411448","url":null,"abstract":"In this paper, we proposes the usage of direct RF undersampling receiver for digital beam forming in high-SHF (over 6GHz) band. The direct RF configuration can be reduce the size of individual receiver attached to each antenna elements and can be realize digital beam forming functionality which is applicable to Massive Multiple-Input-Multiple-Output (MIMO) in 5G system. Recent development of direct RF undersampling S/H CMOS IC in high-SHF band is also introduced.","PeriodicalId":307742,"journal":{"name":"2015 IEEE MTT-S International Microwave and RF Conference (IMaRC)","volume":"86 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126450670","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-12-01DOI: 10.1109/IMARC.2015.7411364
P. Duraiswamy, J. Vandewege
In this paper, we present a four diode switching circuit to reduce the RF coil ring-down time in pulsed EPR spectrometers operating at low Larmor frequency (265 MHz). The proposed switch can be integrated within the matching network of the RF coil. We show that the RF coil ring-down time is reduced by 92 percent with an input power of 0 dBm. A fast switching of 4 ns with an insertion loss of 0.06 dB is obtained. An isolation of 54 dB is achieved between the source and the detector.
{"title":"Switching circuit for RF coil ring-down time reduction in pulsed EPR spectrometer","authors":"P. Duraiswamy, J. Vandewege","doi":"10.1109/IMARC.2015.7411364","DOIUrl":"https://doi.org/10.1109/IMARC.2015.7411364","url":null,"abstract":"In this paper, we present a four diode switching circuit to reduce the RF coil ring-down time in pulsed EPR spectrometers operating at low Larmor frequency (265 MHz). The proposed switch can be integrated within the matching network of the RF coil. We show that the RF coil ring-down time is reduced by 92 percent with an input power of 0 dBm. A fast switching of 4 ns with an insertion loss of 0.06 dB is obtained. An isolation of 54 dB is achieved between the source and the detector.","PeriodicalId":307742,"journal":{"name":"2015 IEEE MTT-S International Microwave and RF Conference (IMaRC)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121468545","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-12-01DOI: 10.1109/IMARC.2015.7411425
V. S. Gangwar, A. K. Singh, S. Singh
This paper presents synthesis of randomly spaced linear array (RSLA) with reduced side lobe level (SLL). Excitation amplitude is assumed to be constant across the array elements and the inter-element spacing is kept in the specified range. A global optimization algorithm (Genetic Algorithm) is proposed to compute the optimum arrangement of inter-element spacings corresponding to lowest possible peak SLL. To validate the effectiveness of the proposed method, an example of RSLA with 24 elements is analysed and numerical results are compared with those using uniform elements' spacing and other published approaches for similar design scenario. Additionally, the effect of mutual coupling among array elements on the performance of RSLA is investigated through an extensive EM simulation study using commercial HFSS software by considering M-shaped patch radiating elements. The EM simulation results for the proposed RSLA having M-shaped equally-excited patch elements with mutual coupling among array elements are compared with those of without mutual coupling, numerical and published results.
{"title":"Side lobe level suppression in randomly spaced linear array using genetic Algorithm","authors":"V. S. Gangwar, A. K. Singh, S. Singh","doi":"10.1109/IMARC.2015.7411425","DOIUrl":"https://doi.org/10.1109/IMARC.2015.7411425","url":null,"abstract":"This paper presents synthesis of randomly spaced linear array (RSLA) with reduced side lobe level (SLL). Excitation amplitude is assumed to be constant across the array elements and the inter-element spacing is kept in the specified range. A global optimization algorithm (Genetic Algorithm) is proposed to compute the optimum arrangement of inter-element spacings corresponding to lowest possible peak SLL. To validate the effectiveness of the proposed method, an example of RSLA with 24 elements is analysed and numerical results are compared with those using uniform elements' spacing and other published approaches for similar design scenario. Additionally, the effect of mutual coupling among array elements on the performance of RSLA is investigated through an extensive EM simulation study using commercial HFSS software by considering M-shaped patch radiating elements. The EM simulation results for the proposed RSLA having M-shaped equally-excited patch elements with mutual coupling among array elements are compared with those of without mutual coupling, numerical and published results.","PeriodicalId":307742,"journal":{"name":"2015 IEEE MTT-S International Microwave and RF Conference (IMaRC)","volume":"182 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121395445","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-12-01DOI: 10.1109/IMARC.2015.7411436
Ravi Gugulothu, S. Bhalke, S. Chaturvedi
This paper presents the design of 50ohm microstrip line, modelling of the metal ceramic package, packaging and characterization of a GaAs MMIC die in the metal ceramic package with optimised interconnections and validation of its performance parameters. The packaged MMIC was characterized under various environmental conditions like temperature cycling, burn-in test and life tests at as per MIL-STD 883 standard. The MMIC performance was monitored before and after every test condition. The packaged amplifier MMIC resulted in good input /output return losses (better than 17dB), linear gain of 20dB, gain flatness of less than 0.5dB, P1dB of 12dBm. It has shown very low drift in gain of plus/minus 0.22dB against 1dB and variation of 1percent in Ids against 10percent.
{"title":"Packaging and characterization of GaAs MMIC C-band amplifier as per MIL-STD 883","authors":"Ravi Gugulothu, S. Bhalke, S. Chaturvedi","doi":"10.1109/IMARC.2015.7411436","DOIUrl":"https://doi.org/10.1109/IMARC.2015.7411436","url":null,"abstract":"This paper presents the design of 50ohm microstrip line, modelling of the metal ceramic package, packaging and characterization of a GaAs MMIC die in the metal ceramic package with optimised interconnections and validation of its performance parameters. The packaged MMIC was characterized under various environmental conditions like temperature cycling, burn-in test and life tests at as per MIL-STD 883 standard. The MMIC performance was monitored before and after every test condition. The packaged amplifier MMIC resulted in good input /output return losses (better than 17dB), linear gain of 20dB, gain flatness of less than 0.5dB, P1dB of 12dBm. It has shown very low drift in gain of plus/minus 0.22dB against 1dB and variation of 1percent in Ids against 10percent.","PeriodicalId":307742,"journal":{"name":"2015 IEEE MTT-S International Microwave and RF Conference (IMaRC)","volume":"2015 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127759789","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-12-01DOI: 10.1109/IMARC.2015.7411421
Priya Shinghal, C. Duff, R. Sloan, S. Cochran
A comparative analysis of the DC and RF performance between single and multi-cascode cells for high frequencies (to V-band) and higher power MMIC operation is presented. This paper compares the power capabilities of a 0.1 μm GaAs pHEMT 2×25 μm single cascode cell with that of a 2×12 μm double-stacked (multi) cascode cell for the design of enhanced output power, broadband MMICs. A load line comparison for the two types of cascode cells shows that a similar maximum output power (Pdcmax) can be obtained from a 2×12 μm double-stacked cascode, when driven over a higher drain voltage swing at lower current, to that from a 2×25 μm single cascode. Moreover, measured data confirms higher Maximum Available Gain (MAG) up to 47 GHz and higher reverse isolation up to 75 GHz for double-stacked class-A operation. Also, a larger bandwidth can be achieved using the smaller devices with lower capacitances. Considering stability, 2×12 μm double-stacked configuration exhibits a lower negative output resistance as compared to the 2×25 μm single cascode. Thus, double-stacked (multi) cascode cell shows better RF performance, with no significant increase in unit cell layout width as compared to single cascode cell, leading to its potential utilization in the design of GaAs pHEMT based, high power MMICs such as Travelling Wave Amplifiers (TWA) up to V-band.
{"title":"Multi-cascode cell design for increased broadband power 0.1μm GaAs pHEMT MMICs up to V-band","authors":"Priya Shinghal, C. Duff, R. Sloan, S. Cochran","doi":"10.1109/IMARC.2015.7411421","DOIUrl":"https://doi.org/10.1109/IMARC.2015.7411421","url":null,"abstract":"A comparative analysis of the DC and RF performance between single and multi-cascode cells for high frequencies (to V-band) and higher power MMIC operation is presented. This paper compares the power capabilities of a 0.1 μm GaAs pHEMT 2×25 μm single cascode cell with that of a 2×12 μm double-stacked (multi) cascode cell for the design of enhanced output power, broadband MMICs. A load line comparison for the two types of cascode cells shows that a similar maximum output power (Pdcmax) can be obtained from a 2×12 μm double-stacked cascode, when driven over a higher drain voltage swing at lower current, to that from a 2×25 μm single cascode. Moreover, measured data confirms higher Maximum Available Gain (MAG) up to 47 GHz and higher reverse isolation up to 75 GHz for double-stacked class-A operation. Also, a larger bandwidth can be achieved using the smaller devices with lower capacitances. Considering stability, 2×12 μm double-stacked configuration exhibits a lower negative output resistance as compared to the 2×25 μm single cascode. Thus, double-stacked (multi) cascode cell shows better RF performance, with no significant increase in unit cell layout width as compared to single cascode cell, leading to its potential utilization in the design of GaAs pHEMT based, high power MMICs such as Travelling Wave Amplifiers (TWA) up to V-band.","PeriodicalId":307742,"journal":{"name":"2015 IEEE MTT-S International Microwave and RF Conference (IMaRC)","volume":"122 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128132607","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-12-01DOI: 10.1109/IMARC.2015.7411431
Ashikur Rahman, E. Yavari, V. Lubecke, O. Lubecke
This paper investigates the AC and DC coupling effects in low-IF tag assisted continuous wave (CW) Doppler radar system. A low-IF RF tag device has been studied for motion artifact compensation in measuring vital sign using a mobile Doppler radar. This work presents a thorough investigation on coupling requirements of the amplifiers for signal conditioning of the received RF signal. Analysis and experiments were performed to achieve proper filtering of unwanted motion artifact from mobile baseband Doppler radar signal using adaptive filtering. This research work will benefit successful motion-artifact-compensation of mobile Doppler-radar life-sign device in vehicle, autonomous aerial vehicle, and in search and rescue robots.
{"title":"AC/DC coupling effects on low-IF tag-assisted mobile Doppler radar life sign detection","authors":"Ashikur Rahman, E. Yavari, V. Lubecke, O. Lubecke","doi":"10.1109/IMARC.2015.7411431","DOIUrl":"https://doi.org/10.1109/IMARC.2015.7411431","url":null,"abstract":"This paper investigates the AC and DC coupling effects in low-IF tag assisted continuous wave (CW) Doppler radar system. A low-IF RF tag device has been studied for motion artifact compensation in measuring vital sign using a mobile Doppler radar. This work presents a thorough investigation on coupling requirements of the amplifiers for signal conditioning of the received RF signal. Analysis and experiments were performed to achieve proper filtering of unwanted motion artifact from mobile baseband Doppler radar signal using adaptive filtering. This research work will benefit successful motion-artifact-compensation of mobile Doppler-radar life-sign device in vehicle, autonomous aerial vehicle, and in search and rescue robots.","PeriodicalId":307742,"journal":{"name":"2015 IEEE MTT-S International Microwave and RF Conference (IMaRC)","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131839734","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-12-01DOI: 10.1109/IMARC.2015.7411395
V. A. Sankar Ponnapalli, P. Jayasree
Fractal antenna design methodology is an artistic design methodology. That's why fractal antennas are also known as artistic antennas. This paper proposed a concentric elliptical ring sub array generator design methodology for a systematic expansion of deterministic fractal planar antenna arrays. Using this design methodology any polygon shape can be constructed. In this paper, a four element rhombic shaped fractal antenna array examined using this design methodology up to four simultaneous iterations and for different eccentric values. Due to recursive nature of fractals and proposed methodology, array elements brought down to 40 percentage and above of the total elements with a reduced side lobe level and beam width. The performance of proposed array shows better performance than four element fractal antenna array generated by concentric circular generator. These arrays are analyzed and simulated by MATLAB programming.
{"title":"Novel design methodology for the generation of deterministic fractal antenna arrays","authors":"V. A. Sankar Ponnapalli, P. Jayasree","doi":"10.1109/IMARC.2015.7411395","DOIUrl":"https://doi.org/10.1109/IMARC.2015.7411395","url":null,"abstract":"Fractal antenna design methodology is an artistic design methodology. That's why fractal antennas are also known as artistic antennas. This paper proposed a concentric elliptical ring sub array generator design methodology for a systematic expansion of deterministic fractal planar antenna arrays. Using this design methodology any polygon shape can be constructed. In this paper, a four element rhombic shaped fractal antenna array examined using this design methodology up to four simultaneous iterations and for different eccentric values. Due to recursive nature of fractals and proposed methodology, array elements brought down to 40 percentage and above of the total elements with a reduced side lobe level and beam width. The performance of proposed array shows better performance than four element fractal antenna array generated by concentric circular generator. These arrays are analyzed and simulated by MATLAB programming.","PeriodicalId":307742,"journal":{"name":"2015 IEEE MTT-S International Microwave and RF Conference (IMaRC)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134639396","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-12-01DOI: 10.1109/IMARC.2015.7411419
S. Srivastava, S. R. Panchal, D. Gandhi, P. Bharadhwaj, Surinder Singh
This paper presents a novel means for paralleling transistors at circuit level for combining power using a Microstrip coupled line based "two-way DC block". This approach offers several features in a single elegant structure, such as: power division, impedance matching between an arbitrary source and loads, inherent DC blocking capability and convenient post-production tuning where necessary. The implemented amplifier achieves the above mentioned functionalities with 17.5 dB of gain in 200 MHz bandwidth and 30dBm of output power at 50% output drain efficiency at Ku band.
{"title":"Circuit level paralleling of devices using two-way DC block for efficient power combining","authors":"S. Srivastava, S. R. Panchal, D. Gandhi, P. Bharadhwaj, Surinder Singh","doi":"10.1109/IMARC.2015.7411419","DOIUrl":"https://doi.org/10.1109/IMARC.2015.7411419","url":null,"abstract":"This paper presents a novel means for paralleling transistors at circuit level for combining power using a Microstrip coupled line based \"two-way DC block\". This approach offers several features in a single elegant structure, such as: power division, impedance matching between an arbitrary source and loads, inherent DC blocking capability and convenient post-production tuning where necessary. The implemented amplifier achieves the above mentioned functionalities with 17.5 dB of gain in 200 MHz bandwidth and 30dBm of output power at 50% output drain efficiency at Ku band.","PeriodicalId":307742,"journal":{"name":"2015 IEEE MTT-S International Microwave and RF Conference (IMaRC)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121757967","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-12-01DOI: 10.1109/IMARC.2015.7411409
Madhumita Chakravarti, K. Reddy, V. Kirty
RF Multi-function chip (MFC) design is taken up to reduce number of connectors, interconnecting cables and RF devices that cause isolation and RF-matching problem causing un-reliability of the system. The repeatability of the performance of RF module is important for production of a system. Power coupler, mixer and preamplifier stages are designed in one chip. LNA, mixer and power dividers are designed in the second chip. The simulation and fabrication results show a close match.
{"title":"RF multi-function chip at Ku-band","authors":"Madhumita Chakravarti, K. Reddy, V. Kirty","doi":"10.1109/IMARC.2015.7411409","DOIUrl":"https://doi.org/10.1109/IMARC.2015.7411409","url":null,"abstract":"RF Multi-function chip (MFC) design is taken up to reduce number of connectors, interconnecting cables and RF devices that cause isolation and RF-matching problem causing un-reliability of the system. The repeatability of the performance of RF module is important for production of a system. Power coupler, mixer and preamplifier stages are designed in one chip. LNA, mixer and power dividers are designed in the second chip. The simulation and fabrication results show a close match.","PeriodicalId":307742,"journal":{"name":"2015 IEEE MTT-S International Microwave and RF Conference (IMaRC)","volume":"39 12","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120915574","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-12-01DOI: 10.1109/IMARC.2015.7411443
K. Nishikawa, H. Sakaki
This paper investigates the impact of the modulation scheme and input power on rectifier RF-DC power conversion efficiency for wireless power transfer system. As the reference, we use the same rectifier with continuous wave (CW) input signal. The paper introduces simulation and measurement results to clarify the impact of QPSK/ 16 QAM modulated input signals with various symbol rates and input powers on the efficiency. The efficiency exhibits three characteristics depending on the input power. The efficiency drastically degrades in the high input power region. On the other hand, rectifier efficiency is significantly enhanced in the lower input power region (basically start-up region). In the middle input power region, signal modulation slightly improves the efficiency. The paper also Indiates that the efficiency depends on the symbol rate of the input signal.
{"title":"Impact of modulation schime on rectifier RF-DC efficiency and optimal signal control technique","authors":"K. Nishikawa, H. Sakaki","doi":"10.1109/IMARC.2015.7411443","DOIUrl":"https://doi.org/10.1109/IMARC.2015.7411443","url":null,"abstract":"This paper investigates the impact of the modulation scheme and input power on rectifier RF-DC power conversion efficiency for wireless power transfer system. As the reference, we use the same rectifier with continuous wave (CW) input signal. The paper introduces simulation and measurement results to clarify the impact of QPSK/ 16 QAM modulated input signals with various symbol rates and input powers on the efficiency. The efficiency exhibits three characteristics depending on the input power. The efficiency drastically degrades in the high input power region. On the other hand, rectifier efficiency is significantly enhanced in the lower input power region (basically start-up region). In the middle input power region, signal modulation slightly improves the efficiency. The paper also Indiates that the efficiency depends on the symbol rate of the input signal.","PeriodicalId":307742,"journal":{"name":"2015 IEEE MTT-S International Microwave and RF Conference (IMaRC)","volume":"57 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126677132","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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