Pub Date : 2015-12-01DOI: 10.1109/IMARC.2015.7411380
M. Agarwal, M. K. Meshram
A compact metamaterial absorber working in X-band is presented in this paper. The unit cell consists of square patch enclosed within the square shaped closed ring resonator (CRR) and diagonally connected with each other via a tilted strip. The proposed structure is having dual band absorbance with peak absorptivity of 95.16% and 97.84% at 8.70 GHz and 10.64 GHz, respectively. Furthermore, broadband absorbance is achieved from the same structure by adjusting the design parameters. The broadband absorber is having over 90% absorbance from 8.50-11.13 GHz. The experimental Full width at Half Maximum (FWHM) bandwidth of the broadband absorber is 3.57 GHz. Both the absorbers have identical absorbance characteristics for two orthogonal polarizations (TE and TM). Moreover, the proposed structure is working well for wide angles of incident wave up to 600. Power loss density in the dielectric and at resonator surface of broadband absorber is also calculated.
{"title":"X-band metamaterial absorber with dual band/broadband absorption characteristics","authors":"M. Agarwal, M. K. Meshram","doi":"10.1109/IMARC.2015.7411380","DOIUrl":"https://doi.org/10.1109/IMARC.2015.7411380","url":null,"abstract":"A compact metamaterial absorber working in X-band is presented in this paper. The unit cell consists of square patch enclosed within the square shaped closed ring resonator (CRR) and diagonally connected with each other via a tilted strip. The proposed structure is having dual band absorbance with peak absorptivity of 95.16% and 97.84% at 8.70 GHz and 10.64 GHz, respectively. Furthermore, broadband absorbance is achieved from the same structure by adjusting the design parameters. The broadband absorber is having over 90% absorbance from 8.50-11.13 GHz. The experimental Full width at Half Maximum (FWHM) bandwidth of the broadband absorber is 3.57 GHz. Both the absorbers have identical absorbance characteristics for two orthogonal polarizations (TE and TM). Moreover, the proposed structure is working well for wide angles of incident wave up to 600. Power loss density in the dielectric and at resonator surface of broadband absorber is also calculated.","PeriodicalId":307742,"journal":{"name":"2015 IEEE MTT-S International Microwave and RF Conference (IMaRC)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120845511","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-12-01DOI: 10.1109/IMARC.2015.7411445
R. Panwar, Smitha Puthucheri, A. Singh, Dharmendra Singh, V. Agarwala
Nowadays there is a stringent need to develop an absorber that can provide good absorption with wide bandwidth and lower coating thickness. In this study, a critical analysis has been carried out over three different kind of absorbing structures, i.e., double layer, fractal Frequency Selective Surface (FSS) integrated, and fractal FSS sandwiched absorbers for achieving good absorption with thickness (t ≤ 1.5 mm) and bandwidth (RL ≤ 10 dB). The selection of suitable composite, layer preferences, and thickness has been optimized using genetic algorithm (GA) on the basis of effective complex dielectric permittivity and magnetic permeability of the synthesized heterogeneous composites. The Sierpinski carpet fractal FSS sandwiched double layer absorber (t = 1.3 mm) shows a strongest RL of 41.29 dB at 8.7 GHz with broad bandwidth of 3.1 GHz in the range of 8.2 to 11.3 GHz. The developed thin and broadband absorber provides an effective and feasible solution for stealth application.
{"title":"Critical analysis of fractal FSS with heterogeneous composite to enhance microwave absorption for stealth application","authors":"R. Panwar, Smitha Puthucheri, A. Singh, Dharmendra Singh, V. Agarwala","doi":"10.1109/IMARC.2015.7411445","DOIUrl":"https://doi.org/10.1109/IMARC.2015.7411445","url":null,"abstract":"Nowadays there is a stringent need to develop an absorber that can provide good absorption with wide bandwidth and lower coating thickness. In this study, a critical analysis has been carried out over three different kind of absorbing structures, i.e., double layer, fractal Frequency Selective Surface (FSS) integrated, and fractal FSS sandwiched absorbers for achieving good absorption with thickness (t ≤ 1.5 mm) and bandwidth (RL ≤ 10 dB). The selection of suitable composite, layer preferences, and thickness has been optimized using genetic algorithm (GA) on the basis of effective complex dielectric permittivity and magnetic permeability of the synthesized heterogeneous composites. The Sierpinski carpet fractal FSS sandwiched double layer absorber (t = 1.3 mm) shows a strongest RL of 41.29 dB at 8.7 GHz with broad bandwidth of 3.1 GHz in the range of 8.2 to 11.3 GHz. The developed thin and broadband absorber provides an effective and feasible solution for stealth application.","PeriodicalId":307742,"journal":{"name":"2015 IEEE MTT-S International Microwave and RF Conference (IMaRC)","volume":"60 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115309937","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-12-01DOI: 10.1109/IMARC.2015.7411391
R. Pandey, D. Vishwakarma
A Meander Line Uniplanar EBG based Multiband antenna using the concept of defected ground plane is presented, fabricated, tested and verified. The antenna operates at the WLAN (2.4 GHz and 5.2 GHz) as well as WiMAX band (3.6 GHz). The antenna is fabricated on the ROGERS RT 5880 substrate having relative permittivity as 2.2 and loss tangent 0.0009. The antenna maintains its gain and radiation patterns at the operating frequencies.
{"title":"A meander line uniplanar EBG based multiband antenna using defected ground plane for WLAN and WiMAX applications","authors":"R. Pandey, D. Vishwakarma","doi":"10.1109/IMARC.2015.7411391","DOIUrl":"https://doi.org/10.1109/IMARC.2015.7411391","url":null,"abstract":"A Meander Line Uniplanar EBG based Multiband antenna using the concept of defected ground plane is presented, fabricated, tested and verified. The antenna operates at the WLAN (2.4 GHz and 5.2 GHz) as well as WiMAX band (3.6 GHz). The antenna is fabricated on the ROGERS RT 5880 substrate having relative permittivity as 2.2 and loss tangent 0.0009. The antenna maintains its gain and radiation patterns at the operating frequencies.","PeriodicalId":307742,"journal":{"name":"2015 IEEE MTT-S International Microwave and RF Conference (IMaRC)","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128583614","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-12-01DOI: 10.1109/IMARC.2015.7411374
Shilpa U. Kharche, G. Reddy, J. Mukherjee, R. Gupta
In this paper mutual coupling reduction in two element MIMO antenna structure using a SRR like structure with variable length is proposed. The structure consists of two modified elliptical shaped monopole antennas with the interelement spacing of 23 mm are fabricated using 0.787 mm thick RT Duroid substrate. S11 and S21 less than -10 dB and -18 dB respectively are obtained over 3.1-10.6 GHz. The proposed structure has a good diversity performance, nearly constant group delay and transfer function variation within 10 dB over UWB.
{"title":"Mutual coupling reduction using variable length srr like structure in ultra wideband MIMO antennas","authors":"Shilpa U. Kharche, G. Reddy, J. Mukherjee, R. Gupta","doi":"10.1109/IMARC.2015.7411374","DOIUrl":"https://doi.org/10.1109/IMARC.2015.7411374","url":null,"abstract":"In this paper mutual coupling reduction in two element MIMO antenna structure using a SRR like structure with variable length is proposed. The structure consists of two modified elliptical shaped monopole antennas with the interelement spacing of 23 mm are fabricated using 0.787 mm thick RT Duroid substrate. S11 and S21 less than -10 dB and -18 dB respectively are obtained over 3.1-10.6 GHz. The proposed structure has a good diversity performance, nearly constant group delay and transfer function variation within 10 dB over UWB.","PeriodicalId":307742,"journal":{"name":"2015 IEEE MTT-S International Microwave and RF Conference (IMaRC)","volume":"115 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124177075","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-12-01DOI: 10.1109/IMARC.2015.7411434
D. S. Rawal, Sunil Sharma, S. Mahajan, M. Mishra, R. Khatri, A. Naik, B. K. Sehgal
This study reports the scaling of current collapse in GaN/AlGaN HEMTs with respect to the un-passivated gate drain distance on the gate edge. The source drain current reduction increased from 4mA to 28mA, when un-passivated gap increased from 200nm to 600nm respectively. This reduction in current is mainly due to virtual gate formation at gate edge as a result of applied large reverse bias between the gate and drain electrodes. The length of virtual gate is a function of un-passivated gap and results in variable current reduction due to variation in available traps with gap. Similarly knee voltage shifted from 0.5 V to 1.2 V when gap is increased from 200nm to 600nm respectively. This is due to increase in device on resistance (Ron) due to electron trapping in the un-passivated gap. This current collapse resulted in reduction of device saturated RF power to 1.2W/mm at 2.2GHz for HEMT with an un-passivated gap of 600nm.
{"title":"Scaling of current collapse in GaN/AlGaN HEMT for microwave power applications","authors":"D. S. Rawal, Sunil Sharma, S. Mahajan, M. Mishra, R. Khatri, A. Naik, B. K. Sehgal","doi":"10.1109/IMARC.2015.7411434","DOIUrl":"https://doi.org/10.1109/IMARC.2015.7411434","url":null,"abstract":"This study reports the scaling of current collapse in GaN/AlGaN HEMTs with respect to the un-passivated gate drain distance on the gate edge. The source drain current reduction increased from 4mA to 28mA, when un-passivated gap increased from 200nm to 600nm respectively. This reduction in current is mainly due to virtual gate formation at gate edge as a result of applied large reverse bias between the gate and drain electrodes. The length of virtual gate is a function of un-passivated gap and results in variable current reduction due to variation in available traps with gap. Similarly knee voltage shifted from 0.5 V to 1.2 V when gap is increased from 200nm to 600nm respectively. This is due to increase in device on resistance (Ron) due to electron trapping in the un-passivated gap. This current collapse resulted in reduction of device saturated RF power to 1.2W/mm at 2.2GHz for HEMT with an un-passivated gap of 600nm.","PeriodicalId":307742,"journal":{"name":"2015 IEEE MTT-S International Microwave and RF Conference (IMaRC)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114991388","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-12-01DOI: 10.1109/IMARC.2015.7411446
K. Samanta
This paper describes the realization of embedded compact and high performance multilayer TFMS-based passives and circuits, substrate integrated waveguides (SIW) and cost effective mounting and integration process, using advanced photoimageable thick-film technology, which offers design flexibility with optimal integration and performance for millimeter-wave (mmW) SOP circuits and systems. The multilayer SIW with trench-fill metal-wall (silver) demonstrates low loss (up to 180 GHz) and is suitable for replacing planar transmission lines for upper mmW and Sub-mmW bands. TFMS multilayer lumped/passive components and circuits show highest performance in MCMs. An efficient mounting and integration technique is used for realizing highly integrated mmW MCMs, integrating MMICs with embedded TFMS lumped filter and SMDs on a single substrate with high performance and compactness.
{"title":"Multilayer thick-film and next generation cost-effective millimetre-wave SoP circuit and system integration techniques","authors":"K. Samanta","doi":"10.1109/IMARC.2015.7411446","DOIUrl":"https://doi.org/10.1109/IMARC.2015.7411446","url":null,"abstract":"This paper describes the realization of embedded compact and high performance multilayer TFMS-based passives and circuits, substrate integrated waveguides (SIW) and cost effective mounting and integration process, using advanced photoimageable thick-film technology, which offers design flexibility with optimal integration and performance for millimeter-wave (mmW) SOP circuits and systems. The multilayer SIW with trench-fill metal-wall (silver) demonstrates low loss (up to 180 GHz) and is suitable for replacing planar transmission lines for upper mmW and Sub-mmW bands. TFMS multilayer lumped/passive components and circuits show highest performance in MCMs. An efficient mounting and integration technique is used for realizing highly integrated mmW MCMs, integrating MMICs with embedded TFMS lumped filter and SMDs on a single substrate with high performance and compactness.","PeriodicalId":307742,"journal":{"name":"2015 IEEE MTT-S International Microwave and RF Conference (IMaRC)","volume":"45 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116136733","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-12-01DOI: 10.1109/IMARC.2015.7411442
A. Subramanyam, D. Sivareddy, V. Krishna, V. Srinivasan, Y. Mehta
A modified combline structure is presented to design a compact narrowband bandpass filter. The length of the resonator is reduced effectively by introducing inductive iris in the conventional capacitive-post loaded combline structure. Further, the insertion loss of the filter is improved significantly by adjusting the cavity dimensions. A prototype narrowband (<;1% fractional bandwidth) filter, operating at 2.28 GHz, is realized for spacecraft data transmitter application. For comparison purposes, the measured performances of both the conventional and present filters are presented. The insertion loss of the present filter is reduced greatly from 2.35 dB to 0.9 dB, but exhibiting almost same electrical performance, while the length is reduced by 40% and thereby having reduced weight and volume.
{"title":"Compact iris-coupled evanescent-mode filter for spacecraft S-band data transmitters","authors":"A. Subramanyam, D. Sivareddy, V. Krishna, V. Srinivasan, Y. Mehta","doi":"10.1109/IMARC.2015.7411442","DOIUrl":"https://doi.org/10.1109/IMARC.2015.7411442","url":null,"abstract":"A modified combline structure is presented to design a compact narrowband bandpass filter. The length of the resonator is reduced effectively by introducing inductive iris in the conventional capacitive-post loaded combline structure. Further, the insertion loss of the filter is improved significantly by adjusting the cavity dimensions. A prototype narrowband (<;1% fractional bandwidth) filter, operating at 2.28 GHz, is realized for spacecraft data transmitter application. For comparison purposes, the measured performances of both the conventional and present filters are presented. The insertion loss of the present filter is reduced greatly from 2.35 dB to 0.9 dB, but exhibiting almost same electrical performance, while the length is reduced by 40% and thereby having reduced weight and volume.","PeriodicalId":307742,"journal":{"name":"2015 IEEE MTT-S International Microwave and RF Conference (IMaRC)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124638474","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-12-01DOI: 10.1109/IMARC.2015.7411381
Manu Raj, S. Chaturvedi, M. Sazid, S. L. Badnikar, B. K. Sehgal
A broadband FET resistive mixer MMIC on GaAs substrate is described in this paper. A non-linear model of MESFET operating in passive mode (Vds=0V) developed for design and simulation of mixer has also been analyzed. Measured mixer results match closely with the simulations based on the developed model. The on-chip broadband spiral baluns delivered wide frequency range from 230 MHz to 1.8 GHz while the LO/RF frequency coverage was from 2-8 GHz. 10 dB conversion loss was achieved for 500 MHz IF at 5 GHz RF frequency, and 10 dBm LO power. The mixer exhibited >10 dBm input 1 dB compression point, 18 dBm input 3rd order intercept point and >30 dB LO-IF and RF-IF isolation. The mixer was realized in compact chip area of 2.8 × 2.6 mm2 through intensive EM simulations using ADS momentum EM simulator and was fabricated using the standard G7A MESFET process at GAETEC.
{"title":"A very wideband FET resistive MMIC double balanced mixer based on empirical non-linear cold FET model","authors":"Manu Raj, S. Chaturvedi, M. Sazid, S. L. Badnikar, B. K. Sehgal","doi":"10.1109/IMARC.2015.7411381","DOIUrl":"https://doi.org/10.1109/IMARC.2015.7411381","url":null,"abstract":"A broadband FET resistive mixer MMIC on GaAs substrate is described in this paper. A non-linear model of MESFET operating in passive mode (Vds=0V) developed for design and simulation of mixer has also been analyzed. Measured mixer results match closely with the simulations based on the developed model. The on-chip broadband spiral baluns delivered wide frequency range from 230 MHz to 1.8 GHz while the LO/RF frequency coverage was from 2-8 GHz. 10 dB conversion loss was achieved for 500 MHz IF at 5 GHz RF frequency, and 10 dBm LO power. The mixer exhibited >10 dBm input 1 dB compression point, 18 dBm input 3rd order intercept point and >30 dB LO-IF and RF-IF isolation. The mixer was realized in compact chip area of 2.8 × 2.6 mm2 through intensive EM simulations using ADS momentum EM simulator and was fabricated using the standard G7A MESFET process at GAETEC.","PeriodicalId":307742,"journal":{"name":"2015 IEEE MTT-S International Microwave and RF Conference (IMaRC)","volume":"64 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127581329","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-12-01DOI: 10.1109/IMARC.2015.7411403
N. Singh, T. Stander
A simulation study of a high-Q resonator in a commercial 130nm SiGe BiCMOS process for E-band frequencies is presented. The resonator is a planar quarter-wave microstrip resonator that uses a HBT based negative resistance circuit to counter losses and enhance the unloaded Q-factor. Using 3D EM (FEM) and circuit co-simulation, enhanced unloaded Q-factors of up to 892 are shown at a frequency of 83.5 GHz compared to the unenhanced unloaded Q-factor of 7. The negative resistance circuit sufficiently compensates for low Q-factors of the planar resonator and the varactor. The resonator is also shown to be continuously tunable in frequency from 82 to 84 GHz, and in unloaded Q-factor from 7 to 892, whilst maintaining unconditional stability in all tuning states.
介绍了一种高q谐振器在商用130nm SiGe BiCMOS工艺中用于e频段的仿真研究。该谐振器是一个平面四分之一波微带谐振器，使用基于HBT的负电阻电路来抵消损耗并提高卸载q因子。利用3D EM (FEM)和电路联合仿真，在83.5 GHz频率下，与未增强的卸载q因子7相比，增强的卸载q因子高达892。负电阻电路充分补偿了平面谐振器和变容管的低q因数。谐振器也被证明是连续可调的频率从82到84 GHz，在卸载q因子从7到892，同时在所有调谐状态下保持无条件的稳定性。
{"title":"Active enhanced tunable high-Q on-chip E-band resonators in 130nm SiGe BiCMOS","authors":"N. Singh, T. Stander","doi":"10.1109/IMARC.2015.7411403","DOIUrl":"https://doi.org/10.1109/IMARC.2015.7411403","url":null,"abstract":"A simulation study of a high-Q resonator in a commercial 130nm SiGe BiCMOS process for E-band frequencies is presented. The resonator is a planar quarter-wave microstrip resonator that uses a HBT based negative resistance circuit to counter losses and enhance the unloaded Q-factor. Using 3D EM (FEM) and circuit co-simulation, enhanced unloaded Q-factors of up to 892 are shown at a frequency of 83.5 GHz compared to the unenhanced unloaded Q-factor of 7. The negative resistance circuit sufficiently compensates for low Q-factors of the planar resonator and the varactor. The resonator is also shown to be continuously tunable in frequency from 82 to 84 GHz, and in unloaded Q-factor from 7 to 892, whilst maintaining unconditional stability in all tuning states.","PeriodicalId":307742,"journal":{"name":"2015 IEEE MTT-S International Microwave and RF Conference (IMaRC)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127587767","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-12-01DOI: 10.1109/IMARC.2015.7411386
Z. Akhter, M. Akhtar
In this paper, a novel time domain RF imaging technique is presented for online monitoring of moving objects over conveyor belts. The proposed technique provides the knowledge of electrical properties i.e., relative permittivity and thickness of material under test (MUT), in addition to the structural properties i.e., size and shape of the interrogated object. The foremost improvement of the proposed technique is that it does not require any reference material or a priori information of the test media for the reconstruction process. The proposed RF imaging technique is best suited for online monitoring, where the structural as well as the electrical properties of the test object can be obtained through nondestructive process without requiring any iterative algorithms.
{"title":"Online monitoring of moving objects on conveyor belts using RF time domain imaging technique","authors":"Z. Akhter, M. Akhtar","doi":"10.1109/IMARC.2015.7411386","DOIUrl":"https://doi.org/10.1109/IMARC.2015.7411386","url":null,"abstract":"In this paper, a novel time domain RF imaging technique is presented for online monitoring of moving objects over conveyor belts. The proposed technique provides the knowledge of electrical properties i.e., relative permittivity and thickness of material under test (MUT), in addition to the structural properties i.e., size and shape of the interrogated object. The foremost improvement of the proposed technique is that it does not require any reference material or a priori information of the test media for the reconstruction process. The proposed RF imaging technique is best suited for online monitoring, where the structural as well as the electrical properties of the test object can be obtained through nondestructive process without requiring any iterative algorithms.","PeriodicalId":307742,"journal":{"name":"2015 IEEE MTT-S International Microwave and RF Conference (IMaRC)","volume":"68 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126885259","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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