Pub Date : 1900-01-01DOI: 10.1109/INEC.2018.8441923
Nan Wang, E. Kanhere, K. Tao, Jin Wu, J. Miao, M. Triantafyllou
This paper presents a compact and disposable electrochemical sensor which can be batch fabricated by standard microfabrication technology. The proposed sensor has the potential to be directly deployed for measuring water hardness, which is mainly contributed by dissolved calcium (Ca) and magnesium (Mg) ions. The analytical performance of the sensor is evaluated through electrochemical experiments. The experimental results indicate that the sensor is capable of detecting Ca and Mg ions down to 1 ppm with a linear detection range from 10 to 50 ppm.
{"title":"Water Hardness Determination Using Disposable MEMS-Based Electrochemical Sensor","authors":"Nan Wang, E. Kanhere, K. Tao, Jin Wu, J. Miao, M. Triantafyllou","doi":"10.1109/INEC.2018.8441923","DOIUrl":"https://doi.org/10.1109/INEC.2018.8441923","url":null,"abstract":"This paper presents a compact and disposable electrochemical sensor which can be batch fabricated by standard microfabrication technology. The proposed sensor has the potential to be directly deployed for measuring water hardness, which is mainly contributed by dissolved calcium (Ca) and magnesium (Mg) ions. The analytical performance of the sensor is evaluated through electrochemical experiments. The experimental results indicate that the sensor is capable of detecting Ca and Mg ions down to 1 ppm with a linear detection range from 10 to 50 ppm.","PeriodicalId":310101,"journal":{"name":"2018 IEEE 8th International Nanoelectronics Conferences (INEC)","volume":"76 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127516779","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/INEC.2018.8441906
Sanathanan S. Muttikulangara, M. Baranski, S. Rehman, Liangxing Hu, J. Miao
This paper discusses fabrication and testing of a monolithic rotary actuator that works on the principle of electrostatic stepper motor mechanism. Optical diffraction gratings are fabricated using negative SU-8 photoresist which are to be embedded on the rotary actuator for tuning.
{"title":"In-plane Rotational Tuning of Polymer Diffraction Grating for Diverse Imaging Spectroscopy","authors":"Sanathanan S. Muttikulangara, M. Baranski, S. Rehman, Liangxing Hu, J. Miao","doi":"10.1109/INEC.2018.8441906","DOIUrl":"https://doi.org/10.1109/INEC.2018.8441906","url":null,"abstract":"This paper discusses fabrication and testing of a monolithic rotary actuator that works on the principle of electrostatic stepper motor mechanism. Optical diffraction gratings are fabricated using negative SU-8 photoresist which are to be embedded on the rotary actuator for tuning.","PeriodicalId":310101,"journal":{"name":"2018 IEEE 8th International Nanoelectronics Conferences (INEC)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115865544","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/INEC.2018.8441932
H. Gu, X. X. Liu, B. Zhao, H. Zhou
In order to eliminating the long-term zero bias drift of MEMS gyroscope efficiently, a multi-scale processing method is proposed by utilizing signal decomposition. At first, an improved complete ensemble empirical mode decomposition (Improved CEEMD) is used to decompose the original signal into a series of stationary modes; then the distinct sub-series are clustered based on the sample entropy, and extreme learning machine (ELM) based model is used to train the sub-series; finally, the desired results can be obtained after de-noise and compensation. To verify the method, MEMS gyroscope CRG20 has been chosen for an hour test, and the experiment shows that zero bias drift reduced from 0.0706°/s to 0.0706°/s($1-sigma )$ within temperature range of − 40° C to 70° C.
{"title":"A Compensation Method for Long-term Zero Bias Drift of MEMS Gyroscope Based on Improved CEEMD and ELM","authors":"H. Gu, X. X. Liu, B. Zhao, H. Zhou","doi":"10.1109/INEC.2018.8441932","DOIUrl":"https://doi.org/10.1109/INEC.2018.8441932","url":null,"abstract":"In order to eliminating the long-term zero bias drift of MEMS gyroscope efficiently, a multi-scale processing method is proposed by utilizing signal decomposition. At first, an improved complete ensemble empirical mode decomposition (Improved CEEMD) is used to decompose the original signal into a series of stationary modes; then the distinct sub-series are clustered based on the sample entropy, and extreme learning machine (ELM) based model is used to train the sub-series; finally, the desired results can be obtained after de-noise and compensation. To verify the method, MEMS gyroscope CRG20 has been chosen for an hour test, and the experiment shows that zero bias drift reduced from 0.0706°/s to 0.0706°/s($1-sigma )$ within temperature range of − 40° C to 70° C.","PeriodicalId":310101,"journal":{"name":"2018 IEEE 8th International Nanoelectronics Conferences (INEC)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129332290","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/INEC.2018.8441907
N. A. F. Othman, S. Hatta, N. Soin
This paper studies the electrical analysis of InGaAs-based planar and tri-gate nMOSFET and the influence of the source/drain (S/D) resistance, Rsd on the current-voltage (${text{I}}_{text{d}}-{text{V}}_{text{g}}$) relation at different drain biases (${text{V}}_{text{ds}}$). It is found that the tri-gate nMOSFET simulated at high Vds has shown better performance compared to planar nMOSFET simulated at low Vds. As the Rsd is reduced, the drain current of both planar and tri-gate devices increases. The on-current to off-current (${text{I}}_{text{on}})/{text{I}}_{text{off}}$) ratio of the devices also increases as the Rsd reduced. Tri-gate nMOSFET shows significant improvement as the Ion/Ioff ratio is $10^{3}$ higher than the planar nMOSFET device.
{"title":"Electrical analysis of InGaAs-based planar and tri-gate nMOSFET with S/D resistance dependencies at different drain biases","authors":"N. A. F. Othman, S. Hatta, N. Soin","doi":"10.1109/INEC.2018.8441907","DOIUrl":"https://doi.org/10.1109/INEC.2018.8441907","url":null,"abstract":"This paper studies the electrical analysis of InGaAs-based planar and tri-gate nMOSFET and the influence of the source/drain (S/D) resistance, Rsd on the current-voltage (${text{I}}_{text{d}}-{text{V}}_{text{g}}$) relation at different drain biases (${text{V}}_{text{ds}}$). It is found that the tri-gate nMOSFET simulated at high Vds has shown better performance compared to planar nMOSFET simulated at low Vds. As the Rsd is reduced, the drain current of both planar and tri-gate devices increases. The on-current to off-current (${text{I}}_{text{on}})/{text{I}}_{text{off}}$) ratio of the devices also increases as the Rsd reduced. Tri-gate nMOSFET shows significant improvement as the Ion/Ioff ratio is $10^{3}$ higher than the planar nMOSFET device.","PeriodicalId":310101,"journal":{"name":"2018 IEEE 8th International Nanoelectronics Conferences (INEC)","volume":"51 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134598381","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/INEC.2018.8441929
B. L. Ong, E. Tok
The shape transition of the CoSi2 islands from nanowire to nanodot and vice versa can be controlled by using different growth temperatures. High growth temperatures favor the formation of ridge nanowires and flat square-nanodots. At lower growth temperatures, the nanowires become more dot-like while flat nanodots are more wire-like. The islands' length, width and height follow the Arrhenius relation with activation energies ranging from 0.4 – 1.6 eV. The shape-transition of these nanowires and nanodots are kinetically limited by thermally-activated processes.
{"title":"Tuning endotaxial growth of CoSi2 nanowires and nanodots*","authors":"B. L. Ong, E. Tok","doi":"10.1109/INEC.2018.8441929","DOIUrl":"https://doi.org/10.1109/INEC.2018.8441929","url":null,"abstract":"The shape transition of the CoSi2 islands from nanowire to nanodot and vice versa can be controlled by using different growth temperatures. High growth temperatures favor the formation of ridge nanowires and flat square-nanodots. At lower growth temperatures, the nanowires become more dot-like while flat nanodots are more wire-like. The islands' length, width and height follow the Arrhenius relation with activation energies ranging from 0.4 – 1.6 eV. The shape-transition of these nanowires and nanodots are kinetically limited by thermally-activated processes.","PeriodicalId":310101,"journal":{"name":"2018 IEEE 8th International Nanoelectronics Conferences (INEC)","volume":"104 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115867333","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/INEC.2018.8441921
M. Mohamad, N. Soin, F. Ibrahim
Graphene shows a promising future in the application of biomedical sensors as the piezoresistive sensing elements due to its electromechanical properties. This paper presents the fundamental development stage of graphene-based piezoresistive intracranial pressure sensor, i.e., to determine its diaphragm design, which is made of polydimethylsiloxane polymer. Different thicknesses of a square diaphragm were simulated using COMSOL Multiphysics. The Parametric Sweep function was used to simultaneously simulate the changes of two parameters, namely diaphragm thickness and operating pressure. It was found that the thin diaphragm is more susceptible to deform due to the rapid geometry changes and the differences in modulus of elasticity of the materials used in the design. Meanwhile, the stress experienced by the diaphragm degraded with the increase in thickness. However, a slight modification in designing and positioning the piezoresistors would make the sensor's performance on par with those of thin diaphragm. Hence, by selecting the right thickness and shape of polydimethylsiloxane diaphragm, it will serve as a good platform in developing the graphene-based piezoresistive intracranial pressure sensor.
{"title":"Electromechanical Piezoresistive Sensing of Graphene-based Intracranial Pressure Sensor","authors":"M. Mohamad, N. Soin, F. Ibrahim","doi":"10.1109/INEC.2018.8441921","DOIUrl":"https://doi.org/10.1109/INEC.2018.8441921","url":null,"abstract":"Graphene shows a promising future in the application of biomedical sensors as the piezoresistive sensing elements due to its electromechanical properties. This paper presents the fundamental development stage of graphene-based piezoresistive intracranial pressure sensor, i.e., to determine its diaphragm design, which is made of polydimethylsiloxane polymer. Different thicknesses of a square diaphragm were simulated using COMSOL Multiphysics. The Parametric Sweep function was used to simultaneously simulate the changes of two parameters, namely diaphragm thickness and operating pressure. It was found that the thin diaphragm is more susceptible to deform due to the rapid geometry changes and the differences in modulus of elasticity of the materials used in the design. Meanwhile, the stress experienced by the diaphragm degraded with the increase in thickness. However, a slight modification in designing and positioning the piezoresistors would make the sensor's performance on par with those of thin diaphragm. Hence, by selecting the right thickness and shape of polydimethylsiloxane diaphragm, it will serve as a good platform in developing the graphene-based piezoresistive intracranial pressure sensor.","PeriodicalId":310101,"journal":{"name":"2018 IEEE 8th International Nanoelectronics Conferences (INEC)","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127188181","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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