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2018 IEEE 8th International Nanoelectronics Conferences (INEC)最新文献

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Water Hardness Determination Using Disposable MEMS-Based Electrochemical Sensor 利用一次性mems电化学传感器测定水的硬度
Pub Date : 1900-01-01 DOI: 10.1109/INEC.2018.8441923
Nan Wang, E. Kanhere, K. Tao, Jin Wu, J. Miao, M. Triantafyllou
This paper presents a compact and disposable electrochemical sensor which can be batch fabricated by standard microfabrication technology. The proposed sensor has the potential to be directly deployed for measuring water hardness, which is mainly contributed by dissolved calcium (Ca) and magnesium (Mg) ions. The analytical performance of the sensor is evaluated through electrochemical experiments. The experimental results indicate that the sensor is capable of detecting Ca and Mg ions down to 1 ppm with a linear detection range from 10 to 50 ppm.
本文提出了一种紧凑、一次性的电化学传感器,可采用标准微细加工技术批量制造。所提出的传感器具有直接用于测量水硬度的潜力,水硬度主要由溶解的钙(Ca)和镁(Mg)离子贡献。通过电化学实验对传感器的分析性能进行了评价。实验结果表明,该传感器能够检测低至1ppm的Ca和Mg离子,线性检测范围为10 ~ 50ppm。
{"title":"Water Hardness Determination Using Disposable MEMS-Based Electrochemical Sensor","authors":"Nan Wang, E. Kanhere, K. Tao, Jin Wu, J. Miao, M. Triantafyllou","doi":"10.1109/INEC.2018.8441923","DOIUrl":"https://doi.org/10.1109/INEC.2018.8441923","url":null,"abstract":"This paper presents a compact and disposable electrochemical sensor which can be batch fabricated by standard microfabrication technology. The proposed sensor has the potential to be directly deployed for measuring water hardness, which is mainly contributed by dissolved calcium (Ca) and magnesium (Mg) ions. The analytical performance of the sensor is evaluated through electrochemical experiments. The experimental results indicate that the sensor is capable of detecting Ca and Mg ions down to 1 ppm with a linear detection range from 10 to 50 ppm.","PeriodicalId":310101,"journal":{"name":"2018 IEEE 8th International Nanoelectronics Conferences (INEC)","volume":"76 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127516779","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
In-plane Rotational Tuning of Polymer Diffraction Grating for Diverse Imaging Spectroscopy 不同成像光谱下聚合物衍射光栅的平面内旋转调谐
Pub Date : 1900-01-01 DOI: 10.1109/INEC.2018.8441906
Sanathanan S. Muttikulangara, M. Baranski, S. Rehman, Liangxing Hu, J. Miao
This paper discusses fabrication and testing of a monolithic rotary actuator that works on the principle of electrostatic stepper motor mechanism. Optical diffraction gratings are fabricated using negative SU-8 photoresist which are to be embedded on the rotary actuator for tuning.
本文讨论了一种基于静电步进电机机构原理的单片旋转驱动器的制作与测试。光学衍射光栅是用负SU-8光刻胶制作的,该光刻胶将嵌入旋转致动器上以进行调谐。
{"title":"In-plane Rotational Tuning of Polymer Diffraction Grating for Diverse Imaging Spectroscopy","authors":"Sanathanan S. Muttikulangara, M. Baranski, S. Rehman, Liangxing Hu, J. Miao","doi":"10.1109/INEC.2018.8441906","DOIUrl":"https://doi.org/10.1109/INEC.2018.8441906","url":null,"abstract":"This paper discusses fabrication and testing of a monolithic rotary actuator that works on the principle of electrostatic stepper motor mechanism. Optical diffraction gratings are fabricated using negative SU-8 photoresist which are to be embedded on the rotary actuator for tuning.","PeriodicalId":310101,"journal":{"name":"2018 IEEE 8th International Nanoelectronics Conferences (INEC)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115865544","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
A Compensation Method for Long-term Zero Bias Drift of MEMS Gyroscope Based on Improved CEEMD and ELM 基于改进CEEMD和ELM的MEMS陀螺仪长期零偏漂移补偿方法
Pub Date : 1900-01-01 DOI: 10.1109/INEC.2018.8441932
H. Gu, X. X. Liu, B. Zhao, H. Zhou
In order to eliminating the long-term zero bias drift of MEMS gyroscope efficiently, a multi-scale processing method is proposed by utilizing signal decomposition. At first, an improved complete ensemble empirical mode decomposition (Improved CEEMD) is used to decompose the original signal into a series of stationary modes; then the distinct sub-series are clustered based on the sample entropy, and extreme learning machine (ELM) based model is used to train the sub-series; finally, the desired results can be obtained after de-noise and compensation. To verify the method, MEMS gyroscope CRG20 has been chosen for an hour test, and the experiment shows that zero bias drift reduced from 0.0706°/s to 0.0706°/s($1-sigma )$ within temperature range of − 40° C to 70° C.
为了有效消除MEMS陀螺仪的长期零偏漂移,提出了一种利用信号分解的多尺度处理方法。首先,采用改进的完全系综经验模态分解(improved CEEMD)将原始信号分解为一系列平稳模态;然后根据样本熵对不同的子序列进行聚类,利用基于极限学习机(ELM)的模型对子序列进行训练;最后,经过去噪和补偿,得到理想的结果。为了验证该方法,选择MEMS陀螺仪CRG20进行了一小时的测试,实验表明,在- 40°C至70°C的温度范围内,零偏漂移从0.0706°/s减小到0.0706°/s($1-sigma)$。
{"title":"A Compensation Method for Long-term Zero Bias Drift of MEMS Gyroscope Based on Improved CEEMD and ELM","authors":"H. Gu, X. X. Liu, B. Zhao, H. Zhou","doi":"10.1109/INEC.2018.8441932","DOIUrl":"https://doi.org/10.1109/INEC.2018.8441932","url":null,"abstract":"In order to eliminating the long-term zero bias drift of MEMS gyroscope efficiently, a multi-scale processing method is proposed by utilizing signal decomposition. At first, an improved complete ensemble empirical mode decomposition (Improved CEEMD) is used to decompose the original signal into a series of stationary modes; then the distinct sub-series are clustered based on the sample entropy, and extreme learning machine (ELM) based model is used to train the sub-series; finally, the desired results can be obtained after de-noise and compensation. To verify the method, MEMS gyroscope CRG20 has been chosen for an hour test, and the experiment shows that zero bias drift reduced from 0.0706°/s to 0.0706°/s($1-sigma )$ within temperature range of − 40° C to 70° C.","PeriodicalId":310101,"journal":{"name":"2018 IEEE 8th International Nanoelectronics Conferences (INEC)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129332290","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Electrical analysis of InGaAs-based planar and tri-gate nMOSFET with S/D resistance dependencies at different drain biases 基于ingaas的平面和三栅极nMOSFET在不同漏极偏置下的S/D电阻依赖性的电学分析
Pub Date : 1900-01-01 DOI: 10.1109/INEC.2018.8441907
N. A. F. Othman, S. Hatta, N. Soin
This paper studies the electrical analysis of InGaAs-based planar and tri-gate nMOSFET and the influence of the source/drain (S/D) resistance, Rsd on the current-voltage (${text{I}}_{text{d}}-{text{V}}_{text{g}}$) relation at different drain biases (${text{V}}_{text{ds}}$). It is found that the tri-gate nMOSFET simulated at high Vds has shown better performance compared to planar nMOSFET simulated at low Vds. As the Rsd is reduced, the drain current of both planar and tri-gate devices increases. The on-current to off-current (${text{I}}_{text{on}})/{text{I}}_{text{off}}$) ratio of the devices also increases as the Rsd reduced. Tri-gate nMOSFET shows significant improvement as the Ion/Ioff ratio is $10^{3}$ higher than the planar nMOSFET device.
本文研究了基于ingaas的平面三栅极nMOSFET的电学分析,以及在不同漏极偏置(${text{V}}_{text{ds}}$)下,源极/漏极(S/D)电阻Rsd对电流-电压(${text{I}}_{text{D}}-{text{g}}$)关系的影响。结果表明,与平面nMOSFET相比,高Vds下的三栅极nMOSFET具有更好的性能。当Rsd降低时,平面和三栅极器件的漏极电流都会增加。器件的通断电流(${text{I}}_{text{on}})/{text{I}}_{text{off}}$)比值也随着Rsd的降低而增加。三栅极nMOSFET表现出显著的改进,离子/开关比比平面nMOSFET器件高$10^{3}$。
{"title":"Electrical analysis of InGaAs-based planar and tri-gate nMOSFET with S/D resistance dependencies at different drain biases","authors":"N. A. F. Othman, S. Hatta, N. Soin","doi":"10.1109/INEC.2018.8441907","DOIUrl":"https://doi.org/10.1109/INEC.2018.8441907","url":null,"abstract":"This paper studies the electrical analysis of InGaAs-based planar and tri-gate nMOSFET and the influence of the source/drain (S/D) resistance, Rsd on the current-voltage (${text{I}}_{text{d}}-{text{V}}_{text{g}}$) relation at different drain biases (${text{V}}_{text{ds}}$). It is found that the tri-gate nMOSFET simulated at high Vds has shown better performance compared to planar nMOSFET simulated at low Vds. As the Rsd is reduced, the drain current of both planar and tri-gate devices increases. The on-current to off-current (${text{I}}_{text{on}})/{text{I}}_{text{off}}$) ratio of the devices also increases as the Rsd reduced. Tri-gate nMOSFET shows significant improvement as the Ion/Ioff ratio is $10^{3}$ higher than the planar nMOSFET device.","PeriodicalId":310101,"journal":{"name":"2018 IEEE 8th International Nanoelectronics Conferences (INEC)","volume":"51 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134598381","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Tuning endotaxial growth of CoSi2 nanowires and nanodots* 调控CoSi2纳米线和纳米点的内生生长*
Pub Date : 1900-01-01 DOI: 10.1109/INEC.2018.8441929
B. L. Ong, E. Tok
The shape transition of the CoSi2 islands from nanowire to nanodot and vice versa can be controlled by using different growth temperatures. High growth temperatures favor the formation of ridge nanowires and flat square-nanodots. At lower growth temperatures, the nanowires become more dot-like while flat nanodots are more wire-like. The islands' length, width and height follow the Arrhenius relation with activation energies ranging from 0.4 – 1.6 eV. The shape-transition of these nanowires and nanodots are kinetically limited by thermally-activated processes.
利用不同的生长温度可以控制CoSi2岛从纳米线到纳米点的形状转变。高生长温度有利于形成脊状纳米线和扁平方形纳米点。在较低的生长温度下,纳米线变得更像点,而扁平纳米点更像线。岛屿的长、宽、高均符合Arrhenius关系,活化能在0.4 ~ 1.6 eV之间。这些纳米线和纳米点的形状转变受到热激活过程的动力学限制。
{"title":"Tuning endotaxial growth of CoSi2 nanowires and nanodots*","authors":"B. L. Ong, E. Tok","doi":"10.1109/INEC.2018.8441929","DOIUrl":"https://doi.org/10.1109/INEC.2018.8441929","url":null,"abstract":"The shape transition of the CoSi2 islands from nanowire to nanodot and vice versa can be controlled by using different growth temperatures. High growth temperatures favor the formation of ridge nanowires and flat square-nanodots. At lower growth temperatures, the nanowires become more dot-like while flat nanodots are more wire-like. The islands' length, width and height follow the Arrhenius relation with activation energies ranging from 0.4 – 1.6 eV. The shape-transition of these nanowires and nanodots are kinetically limited by thermally-activated processes.","PeriodicalId":310101,"journal":{"name":"2018 IEEE 8th International Nanoelectronics Conferences (INEC)","volume":"104 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115867333","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Electromechanical Piezoresistive Sensing of Graphene-based Intracranial Pressure Sensor 石墨烯基颅内压传感器的机电压阻传感
Pub Date : 1900-01-01 DOI: 10.1109/INEC.2018.8441921
M. Mohamad, N. Soin, F. Ibrahim
Graphene shows a promising future in the application of biomedical sensors as the piezoresistive sensing elements due to its electromechanical properties. This paper presents the fundamental development stage of graphene-based piezoresistive intracranial pressure sensor, i.e., to determine its diaphragm design, which is made of polydimethylsiloxane polymer. Different thicknesses of a square diaphragm were simulated using COMSOL Multiphysics. The Parametric Sweep function was used to simultaneously simulate the changes of two parameters, namely diaphragm thickness and operating pressure. It was found that the thin diaphragm is more susceptible to deform due to the rapid geometry changes and the differences in modulus of elasticity of the materials used in the design. Meanwhile, the stress experienced by the diaphragm degraded with the increase in thickness. However, a slight modification in designing and positioning the piezoresistors would make the sensor's performance on par with those of thin diaphragm. Hence, by selecting the right thickness and shape of polydimethylsiloxane diaphragm, it will serve as a good platform in developing the graphene-based piezoresistive intracranial pressure sensor.
石墨烯由于其机电特性,在生物医学传感器中作为压阻式传感元件具有广阔的应用前景。本文介绍了石墨烯基压阻式颅内压传感器的基本发展阶段,即确定其膜片设计,膜片由聚二甲基硅氧烷聚合物制成。利用COMSOL Multiphysics对不同厚度的方形膜片进行了仿真。采用参数化扫描函数同时模拟膜片厚度和操作压力两个参数的变化。研究发现,由于设计中所用材料的快速几何变化和弹性模量的差异,薄膜片更容易变形。同时,膜片承受的应力随厚度的增加而减小。然而,在压敏电阻的设计和定位上稍加修改,就可以使传感器的性能与薄膜片相当。因此,选择合适的厚度和形状的聚二甲基硅氧烷膜片,将为石墨烯基压阻式颅内压传感器的开发提供良好的平台。
{"title":"Electromechanical Piezoresistive Sensing of Graphene-based Intracranial Pressure Sensor","authors":"M. Mohamad, N. Soin, F. Ibrahim","doi":"10.1109/INEC.2018.8441921","DOIUrl":"https://doi.org/10.1109/INEC.2018.8441921","url":null,"abstract":"Graphene shows a promising future in the application of biomedical sensors as the piezoresistive sensing elements due to its electromechanical properties. This paper presents the fundamental development stage of graphene-based piezoresistive intracranial pressure sensor, i.e., to determine its diaphragm design, which is made of polydimethylsiloxane polymer. Different thicknesses of a square diaphragm were simulated using COMSOL Multiphysics. The Parametric Sweep function was used to simultaneously simulate the changes of two parameters, namely diaphragm thickness and operating pressure. It was found that the thin diaphragm is more susceptible to deform due to the rapid geometry changes and the differences in modulus of elasticity of the materials used in the design. Meanwhile, the stress experienced by the diaphragm degraded with the increase in thickness. However, a slight modification in designing and positioning the piezoresistors would make the sensor's performance on par with those of thin diaphragm. Hence, by selecting the right thickness and shape of polydimethylsiloxane diaphragm, it will serve as a good platform in developing the graphene-based piezoresistive intracranial pressure sensor.","PeriodicalId":310101,"journal":{"name":"2018 IEEE 8th International Nanoelectronics Conferences (INEC)","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127188181","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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2018 IEEE 8th International Nanoelectronics Conferences (INEC)
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