Pub Date : 1900-01-01DOI: 10.1109/INEC.2018.8441930
Ning Xue, Chunxiu Liu, Jianhai Sun, Chao Wang
Flexible materials as substrate and/or sensing elements are required for comfortable and conformal wear of such devices. This paper reviews those fabrication technologies and sensor interface circuits for device applications on human skin. Authors' current research overview on flexible pressure sensor on medical application is also discussed.
{"title":"Flexible pressure and force sensing system for wearable medical devices","authors":"Ning Xue, Chunxiu Liu, Jianhai Sun, Chao Wang","doi":"10.1109/INEC.2018.8441930","DOIUrl":"https://doi.org/10.1109/INEC.2018.8441930","url":null,"abstract":"Flexible materials as substrate and/or sensing elements are required for comfortable and conformal wear of such devices. This paper reviews those fabrication technologies and sensor interface circuits for device applications on human skin. Authors' current research overview on flexible pressure sensor on medical application is also discussed.","PeriodicalId":310101,"journal":{"name":"2018 IEEE 8th International Nanoelectronics Conferences (INEC)","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127504866","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/INEC.2018.8441910
N. Raghavan
Dielectric breakdown in logic devices has been a subject of intense study for several decades. With changing dielectric thickness due to downscaling of complementary metal oxide semiconductor (CMOS) technology as well as the shift from SiO2 to other high permittivity dielectric materials, there is a noteworthy change in the physics of failure and the statistical trend of soft, progressive and hard breakdown in oxide films. This study presents a brief summary comparing the physical mechanisms of breakdown and associated stochastics of the failure time distribution in SiO2 and high-κ (HfO2. It is clearly evident that there is a continuous need for more research into oxide breakdown, given the shift towards 2D layered dielectrics such as hexagonal boron nitride in the near future, with markedly different breakdown dynamics.
{"title":"Evolution of the Physics and Stochastics of Failure in Ultra-Thin Dielectrics - From SiO2 to Advanced High-K Gate Stacks","authors":"N. Raghavan","doi":"10.1109/INEC.2018.8441910","DOIUrl":"https://doi.org/10.1109/INEC.2018.8441910","url":null,"abstract":"Dielectric breakdown in logic devices has been a subject of intense study for several decades. With changing dielectric thickness due to downscaling of complementary metal oxide semiconductor (CMOS) technology as well as the shift from SiO2 to other high permittivity dielectric materials, there is a noteworthy change in the physics of failure and the statistical trend of soft, progressive and hard breakdown in oxide films. This study presents a brief summary comparing the physical mechanisms of breakdown and associated stochastics of the failure time distribution in SiO2 and high-κ (HfO2. It is clearly evident that there is a continuous need for more research into oxide breakdown, given the shift towards 2D layered dielectrics such as hexagonal boron nitride in the near future, with markedly different breakdown dynamics.","PeriodicalId":310101,"journal":{"name":"2018 IEEE 8th International Nanoelectronics Conferences (INEC)","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130484248","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/INEC.2018.8441919
K. Tao, L.H. Tang, J. Wu, J. Miao
In this paper, a novel two-degree-of-freedom (2DOF) MEMS electromagnetic vibration energy harvesting system is proposed. The dual-mass resonant structure that comprises of a primary mass and an accessory mass is structured on silicon-on-insulator (SOI) wafer by double-sided deep reactive-ion etching (DRIE). Unlike previous 2DOF harvesters, the induction coil is only patterned on the primary mass for energy conversion. By carefully adjusting the weight of accessory mass, the first two resonances of the primary mass can be tuned close to each other while maintain comparable magnitudes. Therefore, both resonances could contribute to energy harvesting that make the system more efficient and adaptive in frequency-variant vibrational circumstances. With the current prototype, two close resonances with a frequency ratio of only 1.19 and comparable peaks are achieved, providing good validation for the modeling results.
{"title":"A 2DOF MEMS Vibrational Energy Harvester","authors":"K. Tao, L.H. Tang, J. Wu, J. Miao","doi":"10.1109/INEC.2018.8441919","DOIUrl":"https://doi.org/10.1109/INEC.2018.8441919","url":null,"abstract":"In this paper, a novel two-degree-of-freedom (2DOF) MEMS electromagnetic vibration energy harvesting system is proposed. The dual-mass resonant structure that comprises of a primary mass and an accessory mass is structured on silicon-on-insulator (SOI) wafer by double-sided deep reactive-ion etching (DRIE). Unlike previous 2DOF harvesters, the induction coil is only patterned on the primary mass for energy conversion. By carefully adjusting the weight of accessory mass, the first two resonances of the primary mass can be tuned close to each other while maintain comparable magnitudes. Therefore, both resonances could contribute to energy harvesting that make the system more efficient and adaptive in frequency-variant vibrational circumstances. With the current prototype, two close resonances with a frequency ratio of only 1.19 and comparable peaks are achieved, providing good validation for the modeling results.","PeriodicalId":310101,"journal":{"name":"2018 IEEE 8th International Nanoelectronics Conferences (INEC)","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114922629","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/INEC.2018.8441916
C. Tan
Internet of Things (IoT) is coming strongly and we have no escape to it. While current technology and its development can indeed make IoT a reality, its cost has to be much lower and at the same time its reliability must be very high. Furthermore, the necessity of nano-electronics in IoT presents new degradation mechanisms that need to be studied in detail. Thus, it is a huge challenge in reliability field in anticipation of IoT era. This work presents some critical issues and highlight some works that are being done to meet the coming challenges.
{"title":"Reliability Perspective on the IoT and Nanoelectronics","authors":"C. Tan","doi":"10.1109/INEC.2018.8441916","DOIUrl":"https://doi.org/10.1109/INEC.2018.8441916","url":null,"abstract":"Internet of Things (IoT) is coming strongly and we have no escape to it. While current technology and its development can indeed make IoT a reality, its cost has to be much lower and at the same time its reliability must be very high. Furthermore, the necessity of nano-electronics in IoT presents new degradation mechanisms that need to be studied in detail. Thus, it is a huge challenge in reliability field in anticipation of IoT era. This work presents some critical issues and highlight some works that are being done to meet the coming challenges.","PeriodicalId":310101,"journal":{"name":"2018 IEEE 8th International Nanoelectronics Conferences (INEC)","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114610679","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/INEC.2018.8441915
T. Lee
Flip chip technologies (FC) is an enabling technology for heterogeneous integration of MEMS devices. FC reduces the package dimension, improves performance as well as enable scaling up of MEMS chips through 3-D packaging. This paper provide an overview of FC technologies for MEMS and identify the interconnect challenges for MEMS packaging. The paper shares an innovative fluxless FC bonding technique known as solid liquid interdiffusion by compressive force (SLICF) for MEMS packaging.The instantaneous SLICF bonding utilizes a mechanical force to break the Sn oxide layer and allows the submerged body to interact with fresh molten solders to form bonds through solid liquid inter-diffusion. This remove the need of flux and ideal for MEMS packaging for heterogeneous integration. The JIV plugged molten solder in via on flex substrate to enable a fluxless FC bonding for MEMS integration. The fine pitch design rule and foldable of flex substrate enable ease of heterogeneous integration. The bonding architecture enable fluxless FC bonding for heterogeneous integration of MEMS devices to reduce packaging cost and provide a high throughput for heterogeneous integration.
{"title":"Fluxless Flip Chip Interconnects for MEMS Devices for Heterogeneous Integration","authors":"T. Lee","doi":"10.1109/INEC.2018.8441915","DOIUrl":"https://doi.org/10.1109/INEC.2018.8441915","url":null,"abstract":"Flip chip technologies (FC) is an enabling technology for heterogeneous integration of MEMS devices. FC reduces the package dimension, improves performance as well as enable scaling up of MEMS chips through 3-D packaging. This paper provide an overview of FC technologies for MEMS and identify the interconnect challenges for MEMS packaging. The paper shares an innovative fluxless FC bonding technique known as solid liquid interdiffusion by compressive force (SLICF) for MEMS packaging.The instantaneous SLICF bonding utilizes a mechanical force to break the Sn oxide layer and allows the submerged body to interact with fresh molten solders to form bonds through solid liquid inter-diffusion. This remove the need of flux and ideal for MEMS packaging for heterogeneous integration. The JIV plugged molten solder in via on flex substrate to enable a fluxless FC bonding for MEMS integration. The fine pitch design rule and foldable of flex substrate enable ease of heterogeneous integration. The bonding architecture enable fluxless FC bonding for heterogeneous integration of MEMS devices to reduce packaging cost and provide a high throughput for heterogeneous integration.","PeriodicalId":310101,"journal":{"name":"2018 IEEE 8th International Nanoelectronics Conferences (INEC)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121521545","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/INEC.2018.8441911
C. Chi, Xuguang Sun, Tong Li, Ning Xue, Chang Liu
We compared the six common organic solvents in the solution blending method to prepare MWCNT/PDMS composite, including toluene, ethanol, chloroform, n-hexane, tetrahydrofuran (THF) and dimethylformamide (DMF). We proposed the best choice of organic solvents by comparing the dispersion performance of MWCNT and the stability of MWCNT/PDMS. Then, we present the preparation and micromolding of MWCNT/PDMS composite.
{"title":"Preparation of multi-walled carbon nanotubes/polydimethylsiloxane composite for electronic skin application","authors":"C. Chi, Xuguang Sun, Tong Li, Ning Xue, Chang Liu","doi":"10.1109/INEC.2018.8441911","DOIUrl":"https://doi.org/10.1109/INEC.2018.8441911","url":null,"abstract":"We compared the six common organic solvents in the solution blending method to prepare MWCNT/PDMS composite, including toluene, ethanol, chloroform, n-hexane, tetrahydrofuran (THF) and dimethylformamide (DMF). We proposed the best choice of organic solvents by comparing the dispersion performance of MWCNT and the stability of MWCNT/PDMS. Then, we present the preparation and micromolding of MWCNT/PDMS composite.","PeriodicalId":310101,"journal":{"name":"2018 IEEE 8th International Nanoelectronics Conferences (INEC)","volume":"225 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115905568","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/INEC.2018.8441927
Jianbing Xie, Sen Ren, Q. Shen, Lei Chen, H. Xie, W. Yuan
This paper presents the fabrication of High Height-to-Diameter Ratio Micro-Wineglass Resonators using glassblowing with thermal decomposition process. CaCO3 is used as the thermal decomposition material in this process in this paper. A number of chips with $200mu text{m}$ deep cavities are fabricated and loaded with different doses of CaCO3. The experiment results show that, the $200mu text{m}$ deep cavity can blowing a glass spherical shell with the H/DR of 0.79, which is better than the $800mu text{m}$ deep cavity glassblowing process without thermal decomposition.
{"title":"The Fabrication Method of High Height-to-Diameter Ratio Micro-Wineglass Resonators*","authors":"Jianbing Xie, Sen Ren, Q. Shen, Lei Chen, H. Xie, W. Yuan","doi":"10.1109/INEC.2018.8441927","DOIUrl":"https://doi.org/10.1109/INEC.2018.8441927","url":null,"abstract":"This paper presents the fabrication of High Height-to-Diameter Ratio Micro-Wineglass Resonators using glassblowing with thermal decomposition process. CaCO3 is used as the thermal decomposition material in this process in this paper. A number of chips with $200mu text{m}$ deep cavities are fabricated and loaded with different doses of CaCO3. The experiment results show that, the $200mu text{m}$ deep cavity can blowing a glass spherical shell with the H/DR of 0.79, which is better than the $800mu text{m}$ deep cavity glassblowing process without thermal decomposition.","PeriodicalId":310101,"journal":{"name":"2018 IEEE 8th International Nanoelectronics Conferences (INEC)","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123538159","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/INEC.2018.8441935
A. Jaafar, N. Soin, S. Hatta
Technology scaling on CMOS transistor causes the reliability issues is the main concern by most researchers. HCI and NBTI are the main effects that degrade the CMOS transistor. An analysis of different stages for ring oscillator is analyzed based on HCI and NBTI effect. The acceptable supply voltage for CMOS transistor also analyzed for designer to set the limitation of operational voltage for their design. Eldo simulation shows that the HCI and NBTI degradation on CMOS are stable for 11 and 23 stages of ring oscillator.
{"title":"HCI and NBTI Reliability Simulation for 45nm CMOS using Eldo","authors":"A. Jaafar, N. Soin, S. Hatta","doi":"10.1109/INEC.2018.8441935","DOIUrl":"https://doi.org/10.1109/INEC.2018.8441935","url":null,"abstract":"Technology scaling on CMOS transistor causes the reliability issues is the main concern by most researchers. HCI and NBTI are the main effects that degrade the CMOS transistor. An analysis of different stages for ring oscillator is analyzed based on HCI and NBTI effect. The acceptable supply voltage for CMOS transistor also analyzed for designer to set the limitation of operational voltage for their design. Eldo simulation shows that the HCI and NBTI degradation on CMOS are stable for 11 and 23 stages of ring oscillator.","PeriodicalId":310101,"journal":{"name":"2018 IEEE 8th International Nanoelectronics Conferences (INEC)","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114456308","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/INEC.2018.8441925
S. Rahman, N. Soin, F. Ibrahim
Two-dimensional (2D) materials have recently drawn great attention among researchers for emerging electronics. Among these materials, graphene has shown great potential in various types of sensor applications due to its superior electronic and mechanical properties. Its two-dimensionality as well as its high flexibility, conductivity, and transparency make graphene a promising candidate for flexible electronics. This paper reports the development of resistive graphene-based MEMS pressure sensor integrated with interdigitated electrode. These interdigitated electrode structure act as pressure magnifying structure as well as reducing the output non-linearity. A COMSOL simulation was carried out for design optimization of the resistive pressure sensor. In this study, the effect of optimization of the spacing between the Al electrodes is presented to improve the performance of graphene-based pressure sensors at room temperature. Three different spacing distances of 10, 20 and 40 μ m were used as the experimental parameters. The increased spacing could affect in increasing tensile strain on graphene and increased defect generation at the grain boundaries. Therefore, the pressure sensor response could also be improved by increasing the spacing of the interdigitated electrode.
{"title":"Piezoresistive Effect of Interdigitated Electrode Spacing Graphene-based MEMS Intracranial Pressure Sensor","authors":"S. Rahman, N. Soin, F. Ibrahim","doi":"10.1109/INEC.2018.8441925","DOIUrl":"https://doi.org/10.1109/INEC.2018.8441925","url":null,"abstract":"Two-dimensional (2D) materials have recently drawn great attention among researchers for emerging electronics. Among these materials, graphene has shown great potential in various types of sensor applications due to its superior electronic and mechanical properties. Its two-dimensionality as well as its high flexibility, conductivity, and transparency make graphene a promising candidate for flexible electronics. This paper reports the development of resistive graphene-based MEMS pressure sensor integrated with interdigitated electrode. These interdigitated electrode structure act as pressure magnifying structure as well as reducing the output non-linearity. A COMSOL simulation was carried out for design optimization of the resistive pressure sensor. In this study, the effect of optimization of the spacing between the Al electrodes is presented to improve the performance of graphene-based pressure sensors at room temperature. Three different spacing distances of 10, 20 and 40 μ m were used as the experimental parameters. The increased spacing could affect in increasing tensile strain on graphene and increased defect generation at the grain boundaries. Therefore, the pressure sensor response could also be improved by increasing the spacing of the interdigitated electrode.","PeriodicalId":310101,"journal":{"name":"2018 IEEE 8th International Nanoelectronics Conferences (INEC)","volume":"52 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125670175","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/INEC.2018.8441928
B. Tay, Q. Kong, L. Bodelot, Brengere Lebental, D. S. Misra
Thermal characterization of polycrystalline diamond based on an infrared thermal imaging technique is proposed. The temperature mapping of polycrystalline diamond under a metal wire heating are recorded using a $15~mu text{m}$-resolution infrared thermal imaging system. The thermal conductivity of the polycrystalline diamond is derived from the temperature profile using numerical fitting with a 3D heat diffusion model. The thermal conductivity of the polycrystalline diamond is also determined using a $3omega$ technique. The agreement between the thermal conductivities measured using these two techniques is within 15%.
{"title":"Thermal characterization of polycrystalline diamond using infrared thermal imaging measurement*","authors":"B. Tay, Q. Kong, L. Bodelot, Brengere Lebental, D. S. Misra","doi":"10.1109/INEC.2018.8441928","DOIUrl":"https://doi.org/10.1109/INEC.2018.8441928","url":null,"abstract":"Thermal characterization of polycrystalline diamond based on an infrared thermal imaging technique is proposed. The temperature mapping of polycrystalline diamond under a metal wire heating are recorded using a $15~mu text{m}$-resolution infrared thermal imaging system. The thermal conductivity of the polycrystalline diamond is derived from the temperature profile using numerical fitting with a 3D heat diffusion model. The thermal conductivity of the polycrystalline diamond is also determined using a $3omega$ technique. The agreement between the thermal conductivities measured using these two techniques is within 15%.","PeriodicalId":310101,"journal":{"name":"2018 IEEE 8th International Nanoelectronics Conferences (INEC)","volume":"59 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123088123","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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