Pub Date : 2008-12-02DOI: 10.1109/RTP.2008.4690541
P. Petrik, T. Lohner, O. Polgár, M. Fried
The optical properties of semiconductors largely depend on the disorder in the crystal structure, especially in the photon energy range near the direct interband transition energies. The E1 and E2 critical point (CP) energies in silicon are about 3.4 eV (∼365 nm) and 4.2 eV (∼295 nm), respectively. These transitions are located in a photon energy range that is available in most commercial spectroscopic ellipsometers, which makes ellipsometry a powerful technique for the characterization of ion implantation-caused damage. Due to the absorption peaks at the CP energies the optical penetration depth is small. For example, in silicon it is about 10 nm and 5 nm at photon energies corresponding to the E1 and E2 CP energies, respectively. It means that current trends towards shallower junctions and lower ion implantation energies make ellipsometry even more sensitive to the near-surface crystal structure, and the sensitivity of depth profiles can further be increased preparing special samples for the measurements using wedge masks. Ellipsometry measures the complex reflectance ratio of the sample in form of a pair of ellipsometric angles (ψ,Δ) that can accurately be measured using commercial ellipsometers. It is more and more important to use proper optical models to evaluate the measured spectra. There are two key points when evaluating ellipsometric spectra measured on ion implanted semiconductors: (i) the parameterization of the dielectric function of disordered material and (ii) the parameterization of the damage depth profile. The dielectric function can be characterized using numerous methods including the generalized critical point model, the standard critical point model, and the model dielectric function. The depth profile can be described using coupled half-Gaussian profiles or error functions. Because ellipsometry is a non-invasive and non-destructive method, it is capable of the measurement of decreasing disorder in situ, during annealing in a vacuum chamber or a furnace. It has also been demonstrated that ellipsometry is a powerful tool for a quick and non-destructive mapping of large surfaces using special optical arrangements and proper optical models. Using this tool, it is possible to map the lateral homogeneity of the dose, to map the thickness of thin surface layers and any other near-surface properties that can be described by proper optical models.
半导体的光学性质在很大程度上取决于晶体结构的无序性，特别是在接近直接带间跃迁能的光子能量范围内。硅中的E1和E2临界点(CP)能量分别约为3.4 eV (~ 365 nm)和4.2 eV (~ 295 nm)。这些跃迁位于大多数商用光谱椭偏仪可获得的光子能量范围内，这使得椭偏仪成为表征离子注入引起的损伤的强大技术。由于在CP能量处存在吸收峰，因此光学穿透深度较小。例如，在硅中，对应于E1和E2 CP能量的光子能量分别约为10 nm和5 nm。这意味着当前的趋势是更浅的结和更低的离子注入能量使椭圆偏振对近表面晶体结构更加敏感，并且可以进一步提高深度剖面的灵敏度，为楔形掩模的测量准备特殊的样品。椭偏仪以一对椭偏角(ψ，Δ)的形式测量样品的复反射率，这可以用商用椭偏仪精确测量。使用合适的光学模型对测量光谱进行评估变得越来越重要。在评价离子注入半导体的椭偏光谱时，有两个关键点:(1)无序材料介电函数的参数化;(2)损伤深度剖面的参数化。电介质函数可以用多种方法来表征，包括广义临界点模型、标准临界点模型和模型电介质函数。深度分布可以用耦合半高斯分布或误差函数来描述。由于椭偏仪是一种非侵入性和非破坏性的方法，它能够在真空室或炉中原位测量退火过程中减少无序。利用特殊的光学排列和合适的光学模型，椭偏仪是快速、无损地绘制大型表面的有力工具。使用该工具，可以绘制剂量的横向均匀性，绘制薄表面层的厚度和任何其他可以通过适当的光学模型描述的近表面性质。
{"title":"Ellipsometry on ion implantation induced damage","authors":"P. Petrik, T. Lohner, O. Polgár, M. Fried","doi":"10.1109/RTP.2008.4690541","DOIUrl":"https://doi.org/10.1109/RTP.2008.4690541","url":null,"abstract":"The optical properties of semiconductors largely depend on the disorder in the crystal structure, especially in the photon energy range near the direct interband transition energies. The E1 and E2 critical point (CP) energies in silicon are about 3.4 eV (∼365 nm) and 4.2 eV (∼295 nm), respectively. These transitions are located in a photon energy range that is available in most commercial spectroscopic ellipsometers, which makes ellipsometry a powerful technique for the characterization of ion implantation-caused damage. Due to the absorption peaks at the CP energies the optical penetration depth is small. For example, in silicon it is about 10 nm and 5 nm at photon energies corresponding to the E1 and E2 CP energies, respectively. It means that current trends towards shallower junctions and lower ion implantation energies make ellipsometry even more sensitive to the near-surface crystal structure, and the sensitivity of depth profiles can further be increased preparing special samples for the measurements using wedge masks. Ellipsometry measures the complex reflectance ratio of the sample in form of a pair of ellipsometric angles (ψ,Δ) that can accurately be measured using commercial ellipsometers. It is more and more important to use proper optical models to evaluate the measured spectra. There are two key points when evaluating ellipsometric spectra measured on ion implanted semiconductors: (i) the parameterization of the dielectric function of disordered material and (ii) the parameterization of the damage depth profile. The dielectric function can be characterized using numerous methods including the generalized critical point model, the standard critical point model, and the model dielectric function. The depth profile can be described using coupled half-Gaussian profiles or error functions. Because ellipsometry is a non-invasive and non-destructive method, it is capable of the measurement of decreasing disorder in situ, during annealing in a vacuum chamber or a furnace. It has also been demonstrated that ellipsometry is a powerful tool for a quick and non-destructive mapping of large surfaces using special optical arrangements and proper optical models. Using this tool, it is possible to map the lateral homogeneity of the dose, to map the thickness of thin surface layers and any other near-surface properties that can be described by proper optical models.","PeriodicalId":317927,"journal":{"name":"2008 16th IEEE International Conference on Advanced Thermal Processing of Semiconductors","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-12-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116477032","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-12-02DOI: 10.1109/RTP.2008.4690547
E. Rosseel, W. Vandervorst, T. Clarysse, J. Goossens, A. Moussa, R. Lin, D. H. Petersen, P. Nielsen, O. Hansen, N. Bennett, N. Cowern
Sub-melt laser annealing is a promising technique to achieve the required sheet resistance and junction depth specifications for the 32 nm technology node and beyond. In order to obtain a production worthy process with minimal sheet resistance variation at a macroscopic and microscopic level, careful process optimization is required. While macroscopic variations can easily be addressed using the proper spatial power compensation it is more difficult to completely eliminate the micro scale non-uniformity which is intimately linked to the laser beam profile, the amount of overlaps and the scan pitch. In this work, we will present micro scale sheet resistance uniformity measurements for shallow 0.5 keV B junctions and zoom in on the underlying effect of multiple subsequent laser scans. A variety of characterization techniques are used to extract the relevant junction parameters and the role of different implantation and anneal parameters will be explored. It turns out that the observed sheet resistance decrease with increasing number of laser scans is caused on one hand by a temperature dependent increase of the activation level, and on the other hand, by a non-negligible temperature and concentration dependent diffusion component.
{"title":"Impact of multiple sub-melt laser scans on the activation and diffusion of shallow Boron junctions","authors":"E. Rosseel, W. Vandervorst, T. Clarysse, J. Goossens, A. Moussa, R. Lin, D. H. Petersen, P. Nielsen, O. Hansen, N. Bennett, N. Cowern","doi":"10.1109/RTP.2008.4690547","DOIUrl":"https://doi.org/10.1109/RTP.2008.4690547","url":null,"abstract":"Sub-melt laser annealing is a promising technique to achieve the required sheet resistance and junction depth specifications for the 32 nm technology node and beyond. In order to obtain a production worthy process with minimal sheet resistance variation at a macroscopic and microscopic level, careful process optimization is required. While macroscopic variations can easily be addressed using the proper spatial power compensation it is more difficult to completely eliminate the micro scale non-uniformity which is intimately linked to the laser beam profile, the amount of overlaps and the scan pitch. In this work, we will present micro scale sheet resistance uniformity measurements for shallow 0.5 keV B junctions and zoom in on the underlying effect of multiple subsequent laser scans. A variety of characterization techniques are used to extract the relevant junction parameters and the role of different implantation and anneal parameters will be explored. It turns out that the observed sheet resistance decrease with increasing number of laser scans is caused on one hand by a temperature dependent increase of the activation level, and on the other hand, by a non-negligible temperature and concentration dependent diffusion component.","PeriodicalId":317927,"journal":{"name":"2008 16th IEEE International Conference on Advanced Thermal Processing of Semiconductors","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-12-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128640894","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-12-02DOI: 10.1109/RTP.2008.4690544
J. Everaert, G. Zschatzsch, G. Vecchio, W. Vandervorst, L. Cunnane
We show that accurate mass metrology can determine how dopants are added or material is removed during the plasma doping process. In case of erosion, information of mass reduction rate and selectivity can be obtained. Although deposition and erosion can occur simultaneous with implantation, a method is presented how to distinguish these basic reactions. Mass monitoring before and after anneal, reveals that As is very volatile. In the search for a solution we present a post treatment which reduces this loss, hence achieving lower sheet resistance.
{"title":"Plasma doping control by mass metrology","authors":"J. Everaert, G. Zschatzsch, G. Vecchio, W. Vandervorst, L. Cunnane","doi":"10.1109/RTP.2008.4690544","DOIUrl":"https://doi.org/10.1109/RTP.2008.4690544","url":null,"abstract":"We show that accurate mass metrology can determine how dopants are added or material is removed during the plasma doping process. In case of erosion, information of mass reduction rate and selectivity can be obtained. Although deposition and erosion can occur simultaneous with implantation, a method is presented how to distinguish these basic reactions. Mass monitoring before and after anneal, reveals that As is very volatile. In the search for a solution we present a post treatment which reduces this loss, hence achieving lower sheet resistance.","PeriodicalId":317927,"journal":{"name":"2008 16th IEEE International Conference on Advanced Thermal Processing of Semiconductors","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-12-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123436785","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-12-02DOI: 10.1109/RTP.2008.4690534
Jungwoo Oh, P. Majhi, R. Jammy
• Ge based channels appear promising for high mobility pMOSFETs - Need for module level (epi, gate stack, junctions, contacts) optimization as demonstrated • Demonstrated additivity of strain (uniaxial) to the mobility of Ge based channels • Several challenges remain but exciting opportunities for focused research (academic and industry collaboration)
{"title":"High mobility and advanced channels materials","authors":"Jungwoo Oh, P. Majhi, R. Jammy","doi":"10.1109/RTP.2008.4690534","DOIUrl":"https://doi.org/10.1109/RTP.2008.4690534","url":null,"abstract":"• Ge based channels appear promising for high mobility pMOSFETs - Need for module level (epi, gate stack, junctions, contacts) optimization as demonstrated • Demonstrated additivity of strain (uniaxial) to the mobility of Ge based channels • Several challenges remain but exciting opportunities for focused research (academic and industry collaboration)","PeriodicalId":317927,"journal":{"name":"2008 16th IEEE International Conference on Advanced Thermal Processing of Semiconductors","volume":"04 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-12-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129227473","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-12-02DOI: 10.1109/RTP.2008.4690560
A. La Magna, G. Fisicaro, G. Mannino, V. Privitera, G. Piccitto, L. Vines, B. Svensson
A modeling approach is formalized and implemented to investigate the kinetics of the defects-dopant system in the extremely far-from-the equilibrium conditions induced by laser irradiation of Si. The master equations for the evolution of the defect-impurity system is rigorously obtained starting from the Boltzmann’s formalism. The formalism allows to simulate beyond the hypothesis of instantaneous equilibration of the local system energy to the lattice thermal field. Comparisons between simulations and experimental analysis of the processes are discussed. These results indicate the general reliability of the Si self-interstitial clusters energetic derived using conventional thermal processes. The impact of the formalism for other non-conventional annealing techniques is discussed.
{"title":"Thermal and non-thermal kinetics of defects and dopant in Si","authors":"A. La Magna, G. Fisicaro, G. Mannino, V. Privitera, G. Piccitto, L. Vines, B. Svensson","doi":"10.1109/RTP.2008.4690560","DOIUrl":"https://doi.org/10.1109/RTP.2008.4690560","url":null,"abstract":"A modeling approach is formalized and implemented to investigate the kinetics of the defects-dopant system in the extremely far-from-the equilibrium conditions induced by laser irradiation of Si. The master equations for the evolution of the defect-impurity system is rigorously obtained starting from the Boltzmann’s formalism. The formalism allows to simulate beyond the hypothesis of instantaneous equilibration of the local system energy to the lattice thermal field. Comparisons between simulations and experimental analysis of the processes are discussed. These results indicate the general reliability of the Si self-interstitial clusters energetic derived using conventional thermal processes. The impact of the formalism for other non-conventional annealing techniques is discussed.","PeriodicalId":317927,"journal":{"name":"2008 16th IEEE International Conference on Advanced Thermal Processing of Semiconductors","volume":"102 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-12-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121138912","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-12-02DOI: 10.1109/RTP.2008.4690545
B. Adams
RTP emerged as a mainstream technology during the last two decades in part by solving a difficult technical challenge, that of reliable temperature measurement using optical thermometry. Current thermal processing chambers are capable of controlling temperatures which change at hundreds of degrees celsius per second with repeatability of less than one degree with uniformity on the order of a degree. This is accomplished in a radiatively heated environment where the optical properties of the substrate may vary arbitrarily and contact with it is not acceptable or even feasible. This high degree of thermal stability has enabled the production of the current generation of integrated circuits. Processing requirements are pushing the limits of traditional lamp based technology, and new techniques for sub-second anneals are starting to emerge. With the development of the sub-second anneal, temperature heating and cooling rates may exceed millions of degrees per second, and temperature control may become the limiting factor as it was in the early days of the evolution of the industry.
{"title":"Temperature measurement in RTP: Past and future","authors":"B. Adams","doi":"10.1109/RTP.2008.4690545","DOIUrl":"https://doi.org/10.1109/RTP.2008.4690545","url":null,"abstract":"RTP emerged as a mainstream technology during the last two decades in part by solving a difficult technical challenge, that of reliable temperature measurement using optical thermometry. Current thermal processing chambers are capable of controlling temperatures which change at hundreds of degrees celsius per second with repeatability of less than one degree with uniformity on the order of a degree. This is accomplished in a radiatively heated environment where the optical properties of the substrate may vary arbitrarily and contact with it is not acceptable or even feasible. This high degree of thermal stability has enabled the production of the current generation of integrated circuits. Processing requirements are pushing the limits of traditional lamp based technology, and new techniques for sub-second anneals are starting to emerge. With the development of the sub-second anneal, temperature heating and cooling rates may exceed millions of degrees per second, and temperature control may become the limiting factor as it was in the early days of the evolution of the industry.","PeriodicalId":317927,"journal":{"name":"2008 16th IEEE International Conference on Advanced Thermal Processing of Semiconductors","volume":"63 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-12-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130675503","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-12-02DOI: 10.1109/RTP.2008.4690561
K. Yako, Toyoji Yamamoto, K. Uejima, T. Ikezawa, M. Hane
We designed and fabricated sub-30 nm gate length pMOSFETs developing the raised source/drain extension (RSDext) process. Our process features usages of cluster-ion (B18H22) implantation and high-temperature millisecond annealing processes and a facet-structure-control of the RSDext of less than 10 nm thickness for suppressing a fringe capacitance increase for the “effective” ultra-shallower junction formation. As the results, experimentally obtained our pMOSFETs with raised source/drain extension show almost the same LMIN, 1/2 times lower parasitic resistance and lower junction leakage.
{"title":"Parasitic resistance and leakage reduction by raised source / drain extention fabricated with cluster ion implantation and millisecond annealing","authors":"K. Yako, Toyoji Yamamoto, K. Uejima, T. Ikezawa, M. Hane","doi":"10.1109/RTP.2008.4690561","DOIUrl":"https://doi.org/10.1109/RTP.2008.4690561","url":null,"abstract":"We designed and fabricated sub-30 nm gate length pMOSFETs developing the raised source/drain extension (RSDext) process. Our process features usages of cluster-ion (B18H22) implantation and high-temperature millisecond annealing processes and a facet-structure-control of the RSDext of less than 10 nm thickness for suppressing a fringe capacitance increase for the “effective” ultra-shallower junction formation. As the results, experimentally obtained our pMOSFETs with raised source/drain extension show almost the same LMIN, 1/2 times lower parasitic resistance and lower junction leakage.","PeriodicalId":317927,"journal":{"name":"2008 16th IEEE International Conference on Advanced Thermal Processing of Semiconductors","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-12-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129043130","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-12-02DOI: 10.1109/RTP.2008.4690552
D. Hauschild, P. Harten, L. Aschke, V. Lissotschenko
The use of laser technologies for the well defined selective heating of wafers and thin film semiconductors for melt and non-melt RTP processes is an alternative way to fulfil the design goals of next generation semiconductor devices for data processing or photovoltaic. A variety of efficient and reliable laser sources are available from UV to IR that can match the absorption characteristics of nearly any material. To make technical and economical use of these advantages the laser power has to be focussed on the surface with a well defined beam geometry and intensity profile. For a fast processing of 300mm wafers or Gen 8 LCD or solar panels a beam with line or rectangular geometry is needed. In addition to the beam geometry, the intensity distribution in scanning direction is an essential parameter for a controlled temporal heating and cooling profile of the materials. These beam profiles control the vertical thermal penetration depth and reduce the thermal load of the semiconductor layers and substrates by faster scanning speed and μs- and ns-illumination regime.
{"title":"Free form microlens sysems enable new laser beam profiles for RTP","authors":"D. Hauschild, P. Harten, L. Aschke, V. Lissotschenko","doi":"10.1109/RTP.2008.4690552","DOIUrl":"https://doi.org/10.1109/RTP.2008.4690552","url":null,"abstract":"The use of laser technologies for the well defined selective heating of wafers and thin film semiconductors for melt and non-melt RTP processes is an alternative way to fulfil the design goals of next generation semiconductor devices for data processing or photovoltaic. A variety of efficient and reliable laser sources are available from UV to IR that can match the absorption characteristics of nearly any material. To make technical and economical use of these advantages the laser power has to be focussed on the surface with a well defined beam geometry and intensity profile. For a fast processing of 300mm wafers or Gen 8 LCD or solar panels a beam with line or rectangular geometry is needed. In addition to the beam geometry, the intensity distribution in scanning direction is an essential parameter for a controlled temporal heating and cooling profile of the materials. These beam profiles control the vertical thermal penetration depth and reduce the thermal load of the semiconductor layers and substrates by faster scanning speed and μs- and ns-illumination regime.","PeriodicalId":317927,"journal":{"name":"2008 16th IEEE International Conference on Advanced Thermal Processing of Semiconductors","volume":"245 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-12-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131882365","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-12-02DOI: 10.1109/RTP.2008.4690550
J. Mcwhirter, D. Gaines, P. Zambon
For the successful implementation of any advanced annealing system in a production environment, real-time measurement and control of wafer peak temperature is critical. For sub-millisecond laser anneal (SMA), the uniformity and repeatability of wafer peak temperature is limited by a variety of local and global effects. Two examples are variations in substrate temperature, and optical power fluctuations which are primarily caused by changes in the transmittance of the beam delivery system. We report on characterization and temperature uniformity performance of a laser spike anneal (LSA) system utilizing a closed loop feedback control system based on thermal emission from the local anneal site. We also report on the results of a characterization of a silicon wafer’s thermal response to temporal variations in incident optical power. Finally, we show that a properly designed measurement and control system enables the achievement of uniform and repeatable peak anneal temperatures.
{"title":"Emission feedback control system for sub-millisecond laser spike anneal","authors":"J. Mcwhirter, D. Gaines, P. Zambon","doi":"10.1109/RTP.2008.4690550","DOIUrl":"https://doi.org/10.1109/RTP.2008.4690550","url":null,"abstract":"For the successful implementation of any advanced annealing system in a production environment, real-time measurement and control of wafer peak temperature is critical. For sub-millisecond laser anneal (SMA), the uniformity and repeatability of wafer peak temperature is limited by a variety of local and global effects. Two examples are variations in substrate temperature, and optical power fluctuations which are primarily caused by changes in the transmittance of the beam delivery system. We report on characterization and temperature uniformity performance of a laser spike anneal (LSA) system utilizing a closed loop feedback control system based on thermal emission from the local anneal site. We also report on the results of a characterization of a silicon wafer’s thermal response to temporal variations in incident optical power. Finally, we show that a properly designed measurement and control system enables the achievement of uniform and repeatable peak anneal temperatures.","PeriodicalId":317927,"journal":{"name":"2008 16th IEEE International Conference on Advanced Thermal Processing of Semiconductors","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-12-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131674189","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-12-02DOI: 10.1109/RTP.2008.4690557
D. Ceperley, A. Neureuther, A. Hawryluk, Xiaoru Wang, M. Shen, Yun Wang
Finite difference time domain simulation of the electromagnetic coupling in millisecond radiation heating is used to explore how the energy couples, where it goes in the device structure, and wavelength dependencies. Millisecond annealing is advantageous for improving IC device characteristics; however, the application of short time scale annealing requires very careful control over the localized heating that can be pattern, device structure, and material dependent. The presence of metal gate structure introduces extra complexity. This paper considers the case of tungsten gates on poly-silicon pedestals with or without silicon nitride caps. Rigorous finite difference time domain techniques are used to compute the fields throughout the device structure as a function of polarization, angle of incidence, wavelength, CD, and pitch. One of the dominant effects is that a grating formed by a metal gate array acts like a polarizer. Thus the coupling changes with grating orientation. The coupling is the strongest when the incident plane is perpendicular to the gate and the electric field is p-polarized. In the case of laser light with a 10 μm wavelength incident near silicon’s Brewster angle, the absorptivity approaches 100% just as if the tungsten metal gates do not exist. Data from similar studies at shorter wavelengths is also presented as well as a comparison with experimental measurements.
{"title":"Wavelength and polarization dependent absorbtion effects in millisecond annealing of metal gate structures","authors":"D. Ceperley, A. Neureuther, A. Hawryluk, Xiaoru Wang, M. Shen, Yun Wang","doi":"10.1109/RTP.2008.4690557","DOIUrl":"https://doi.org/10.1109/RTP.2008.4690557","url":null,"abstract":"Finite difference time domain simulation of the electromagnetic coupling in millisecond radiation heating is used to explore how the energy couples, where it goes in the device structure, and wavelength dependencies. Millisecond annealing is advantageous for improving IC device characteristics; however, the application of short time scale annealing requires very careful control over the localized heating that can be pattern, device structure, and material dependent. The presence of metal gate structure introduces extra complexity. This paper considers the case of tungsten gates on poly-silicon pedestals with or without silicon nitride caps. Rigorous finite difference time domain techniques are used to compute the fields throughout the device structure as a function of polarization, angle of incidence, wavelength, CD, and pitch. One of the dominant effects is that a grating formed by a metal gate array acts like a polarizer. Thus the coupling changes with grating orientation. The coupling is the strongest when the incident plane is perpendicular to the gate and the electric field is p-polarized. In the case of laser light with a 10 μm wavelength incident near silicon’s Brewster angle, the absorptivity approaches 100% just as if the tungsten metal gates do not exist. Data from similar studies at shorter wavelengths is also presented as well as a comparison with experimental measurements.","PeriodicalId":317927,"journal":{"name":"2008 16th IEEE International Conference on Advanced Thermal Processing of Semiconductors","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-12-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133193584","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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