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2017 Integrated Nonlinear Microwave and Millimetre-wave Circuits Workshop (INMMiC)最新文献

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High efficiency active filter 高效有源滤波器
Pub Date : 2017-04-01 DOI: 10.1109/INMMIC.2017.7927303
L. Pantoli, V. Stornelli, G. Leuzzi
An innovative solution for the design of tunable active filter is here addressed with circuitry details. The novel design approach is based on the use of an active inductor realized with a single active device in class-AB polarization. This choice allows to obtain both a minimum power consumption and a wide dynamic range, making the filter suitable for IC integration. A prototype board with discrete components has been realized and tested. Measurements show good agreement with simulations demonstrating the feasibility of the proposed solution in commercial applications.
一种创新的可调谐有源滤波器的设计方案,在此讨论电路细节。这种新颖的设计方法是基于在ab类极化中使用单个有源器件实现有源电感。这种选择可以获得最小的功耗和宽动态范围,使滤波器适合集成电路。实现并测试了一个离散元件的原型板。测量结果与仿真结果吻合良好,证明了该方案在商业应用中的可行性。
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引用次数: 1
A 2.0–2.5 GHz frequency-selectable oscillator for digital predistortion model identification of RF power amplifiers 一种用于射频功率放大器数字预失真模型识别的2.0-2.5 GHz频率可选振荡器
Pub Date : 2017-04-01 DOI: 10.1109/INMMIC.2017.7927294
Kevin McGrath, A. Zhu
This paper presents the design of a frequency selectable oscillator used as part of a new data acquisition architecture for digital predistortion (DPD) of RF power amplifiers (PAs). The proposed architecture aims to alleviate the requirement of high sampling rate analog-to-digital-converters (ADCs) in the data acquisition loop. The oscillator utilizes switchable capacitors with a digital control scheme and is capable of operating between 2.0 GHz and 2.5 GHz with an approximate frequency step size of 512 kHz.
本文设计了一种频率可选振荡器,用于射频功率放大器(pa)数字预失真(DPD)的新数据采集架构。该架构旨在缓解数据采集环路中对高采样率模数转换器(adc)的要求。该振荡器采用数字控制方案的可切换电容器,能够在2.0 GHz和2.5 GHz之间工作,频率步长约为512 kHz。
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引用次数: 1
High power-handling GaN switch for S-band applications 用于s波段应用的高功率处理GaN开关
Pub Date : 2017-04-01 DOI: 10.1109/INMMIC.2017.7927296
G. Polli, M. Palomba, S. Colangeli, M. Vittori, E. Limiti
An asymmetrical switch architecture suitable for TRMs is proposed in this contribution. The design procedure and a test circuit are provided. The switch exhibits a 48.8 dBm input power-handling at a 0.1 dB power compression level and features an insertion loss less than 0.6 dB both in Rx- and Tx-mode.
本文提出了一种适用于trm的非对称开关结构。给出了设计步骤和测试电路。该开关在0.1 dB功率压缩水平下具有48.8 dBm的输入功率处理,并且在Rx和tx模式下的插入损耗均小于0.6 dB。
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引用次数: 3
Digital predistortion of RF PAs for MIMO transmitters based on the equivalent load 基于等效负载的MIMO发射机射频放大器的数字预失真
Pub Date : 2017-04-01 DOI: 10.1109/INMMIC.2017.7927295
Filipe M. Barradas, T. Cunha, J. Pedro
Modern transmitter architectures rely on MIMO techniques, using several RF PAs to excite an antenna array. The array elements are often coupled, creating apparent variable loads at the output of each PA. In this system, the behavior of each PA is dependent on the coupled signal from the other array elements. This is felt in terms of device output power and efficiency variation and also as an overall change of the gain characteristic. When linearization of the RF PAs feeding the antennas is performed without taking into account this coupling, some degradation of the system performance in terms of linearity is expectable. In this paper, we analyze the PA operation on a dual antenna array in terms of distortion and propose a DPD structure with adaptive coefficients based on the equivalent load.
现代发射机架构依赖于MIMO技术,使用几个射频放大器来激发天线阵列。阵列元素通常是耦合的,在每个PA的输出处产生明显的可变负载。在这个系统中,每个PA的行为依赖于来自其他阵列元素的耦合信号。这可以从器件输出功率和效率变化以及增益特性的整体变化中感受到。当在不考虑这种耦合的情况下对馈送天线的RF PAs进行线性化时,可以预期系统性能在线性方面会有所下降。本文从畸变的角度分析了双天线阵的扩频工作,提出了一种基于等效负载的自适应系数DPD结构。
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引用次数: 11
Low-voltage flip-flop-based frequency divider up to 92-GHz in 130-nm SiGe BiCMOS technology 基于触发器的低压分频器,采用130纳米SiGe BiCMOS技术,频率高达92 ghz
Pub Date : 2017-04-01 DOI: 10.1109/INMMIC.2017.7927321
V. Issakov, S. Trotta, H. Knapp
This paper presents a flip-flop-based pseudo-current-mode logic (CML) 2:1 frequency divider designed in 130 nm SiGe BiCMOS technology. We use an auxiliary transistor to increase the current thru the data pair, known as the “keep-alive” bias technique. Thereby one can easily control the asymmetry of the period by tuning the gate voltage of the auxiliary transistor. This enables tunable divider's self-oscillation frequency (SOF) enhancement. The effect is confirmed in measurement by showing that the highest division frequency can be increased by up to 25 GHz. The frequency divider operates from 14 GHz to 89 GHz consuming 21 mA from a 1.2 V supply, or from 2 GHz to 92.5 GHz consuming 37 mA from a 1.5 V supply. To the authors' knowledge, the presented divider achieves the highest ratio of frequency range to power consumption reported to date.
提出了一种基于触发器的伪电流模式逻辑(CML) 2:1分频器,该分频器采用130 nm SiGe BiCMOS技术。我们使用一个辅助晶体管来增加通过数据对的电流,这被称为“保持激活”偏置技术。因此,通过调节辅助晶体管的栅极电压,可以很容易地控制周期的不对称性。这使得可调分频器的自振荡频率(SOF)增强。该效应在测量中得到证实,表明最高分频可提高25 GHz。分频器工作范围从14 GHz到89 GHz,从1.2 V电源消耗21 mA,或从2 GHz到92.5 GHz,从1.5 V电源消耗37 mA。据作者所知,该分频器实现了迄今为止报道的频率范围与功耗的最高比率。
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引用次数: 10
LO waveform effects on the linearity of sub-THz frequency converters 本征波形对亚太赫兹频率转换器线性度的影响
Pub Date : 2017-04-01 DOI: 10.1109/INMMIC.2017.7927293
J. Martens
Frequency converters in the sub-Terahertz/sub-millimeter frequency ranges often use high local oscillator (LO) multiples, whether these converters are configured as harmonic mixers or samplers. As such, there can be enhanced dependencies on the LO waveform details as has been evidenced by prior work on conversion efficiency versus LO phase noise and related studies. Of interest is how the linearity, as measured by intermodulation distortion (IMD3 for the 3rd order product), is affected by injected noise and harmonic contamination. It has been found that the effects can be profound, and with sometimes rapid onsets above certain injection levels that depend on the converter technology and harmonic order. IMD3 changes of greater than 20 dB have been observed in (broadband to) WR-6 converters as well as in WR-2.2 systems for relatively modest contamination changes.
在次太赫兹/亚毫米频率范围内的频率转换器通常使用高本振(LO)倍数,无论这些转换器配置为谐波混频器或采样器。因此,可以增强对本LO波形细节的依赖,这已经被先前的转换效率与本LO相位噪声和相关研究所证明。令人感兴趣的是,通过互调失真(三阶积的IMD3)测量的线性度如何受到注入噪声和谐波污染的影响。已经发现,影响可能是深远的,有时在一定的注入水平上,这取决于转换器的技术和谐波顺序。在(宽带到)WR-6转换器以及相对温和的污染变化的WR-2.2系统中,已观察到IMD3变化大于20 dB。
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引用次数: 1
Reduced-feedback MIMO digital predistortion of power amplifiers for 5G systems 5G系统中功率放大器的减少反馈MIMO数字预失真
Pub Date : 2017-04-01 DOI: 10.1109/INMMIC.2017.7927318
T. Gotthans, Roman Maršáek, J. Gotthans, M. Hoflehner
In this paper we present a reduced complexity digital predistortion of multiple power amplifiers. The reduction is based on using only one feedback path taking into account the similar characteristics of amplifiers in the MIMO system. After some theoretical basics, the paper presents the results of the experiment trying to give an answer whether the predistortion can be used with limited (in extreme case with only one) number of feedback paths. Due to its very low out-of-band emissions, the filter-bank-multicarrier signal has been used as a test signal as a typical representative of post-OFDM waveforms.
本文提出了一种降低多功率放大器数字预失真复杂度的方法。考虑到MIMO系统中放大器的相似特性,这种减小基于只使用一个反馈路径。在一定的理论基础上,本文给出了实验结果,试图给出在有限(极端情况下只有一个)反馈路径的情况下是否可以使用预失真的答案。由于其极低的带外发射,滤波器组多载波信号作为后ofdm波形的典型代表被用作测试信号。
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引用次数: 2
Classifying load-pull contours of a broadband high-efficiency power amplifier using a support vector machine 利用支持向量机对宽带高效功率放大器的负载-拉线图进行分类
Pub Date : 2017-04-01 DOI: 10.1109/INMMIC.2017.7927305
P. Chen, T. Brazil
This paper develops an advanced method to classify load-pull contours for the design of a broadband high-efficiency power amplifiers (PA) using the technique of a support vector machine (SVM). The classifier models for load-pull contours are verified through their accuracy in test and design validation. Comparisons reveal that the proposed method significantly outperforms commercial electronic design automation (EDA) software in a 10-W PA designs from 1.5 to 2.5 GHz. Measured results show that the optimized PA using the proposed method achieves high efficiency across the band, as well as good linearity with digital predistortion (DPD).
本文提出了一种基于支持向量机(SVM)的宽带高效功率放大器负载-牵引线分类方法。通过试验和设计验证,验证了负载-拉力轮廓分类器模型的准确性。比较表明,该方法在1.5至2.5 GHz的10w PA设计中显著优于商业电子设计自动化(EDA)软件。实测结果表明,采用该方法优化后的扩频放大器在全频带内具有较高的效率,并且具有良好的线性度和数字预失真(DPD)特性。
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引用次数: 3
A Ka-band low power and high-efficiency differential power amplifier in 0.25-μm BiCMOS 基于0.25-μm BiCMOS的ka波段低功耗高效差分功率放大器
Pub Date : 2017-04-01 DOI: 10.1109/INMMIC.2017.7927315
M. Balducci, H. Schumacher, S. Chartier
A Ka-band power amplifier (PA) in a differential cascode topology with active biasing is designed, implemented in a 0.25 μm SiGe BiCMOS technology, and characterized. The design presents low power consumption and high Power Added Efficiency (PAE). This PA presents an output power of 12.3 dBm at P1dB with 16.5% Power Added Efficiency (PAE). The PAE peak is 17.5 % and it is centered nearby the P1dB. The consumed power is lower than 100 mW at the P1dB with a supply voltage of 3.3 V. Including the measurements pads the IC occupies an area of 870 μm × 780 μm.
设计了一种具有有源偏置的差分级联码拓扑ka波段功率放大器(PA),采用0.25 μm SiGe BiCMOS技术实现,并对其进行了表征。该设计具有低功耗和高功率附加效率(PAE)的特点。该放大器在P1dB时的输出功率为12.3 dBm,功率附加效率(PAE)为16.5%。PAE峰值为17.5%,以P1dB附近为中心。在电源电压为3.3 V时,P1dB的功耗小于100mw。包括测量垫在内,集成电路的面积为870 μm × 780 μm。
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引用次数: 5
Low conversion loss 94 GHz and 188 GHz doublers in InP DHBT technology 低转换损耗94 GHz和188 GHz倍频InP DHBT技术
Pub Date : 2017-04-01 DOI: 10.1109/INMMIC.2017.7927292
V. Zhurbenko, T. Johansen, M. Squartecchia, V. Midili, O. Rybalko, M. Riet, J. Dupuy, V. Nodjiadjim, A. Konczykowska
An Indium Phosphide (InP) Double Heterojunction Bipolar Transistor (DHBT) process has been utilized to design two doublers to cover the 94 GHz and 188 GHz bands. The 94 GHz doubler employs 4-finger DHBTs and provides conversion loss of 2 dB. A maximum output power of nearly 3 dBm is measured while the doubler is not entirely saturated. The DC power consumption is 132 mW. The 188 GHz doubler utilizes a 1-finger DHBT. Conversion loss of 2 dB and a maximum output power of −1 dBm are achieved at 188 GHz with on-wafer measurements. The DC power consumption is 24 mW under saturated conditions. Both doublers operate over a broad bandwidth. The total circuit area of each chip is 1.41 mm2.
利用磷化铟(InP)双异质结双极晶体管(DHBT)工艺设计了两个覆盖94 GHz和188 GHz频段的倍频器。94 GHz倍频器采用4指dhbt,转换损耗为2db。当倍增器不完全饱和时,测量到的最大输出功率接近3 dBm。直流功耗为132mw。188ghz倍频器采用1指DHBT。在188ghz的片上测量下,转换损耗为2db,最大输出功率为- 1dbm。饱和条件下直流功耗为24mw。两个倍频器都在宽带宽上工作。每个芯片的总电路面积为1.41 mm2。
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引用次数: 3
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2017 Integrated Nonlinear Microwave and Millimetre-wave Circuits Workshop (INMMiC)
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