Pub Date : 1999-06-26DOI: 10.1109/HKEDM.1999.836401
W. Man, S. Yu
This paper presents the bifurcation behaviour of the transient response of vertical cavity surface emitting lasers (VCSELs) with different aperture sizes. It is shown that lasers with small aperture size suppress higher order bifurcations and chaos even under large signal modulation and external optical feedback. Therefore, VCSELs with small aperture size have better immunity to irregular response under direct current modulation and external optical feedback.
{"title":"Bifurcation behaviour of vertical cavity surface emitting lasers","authors":"W. Man, S. Yu","doi":"10.1109/HKEDM.1999.836401","DOIUrl":"https://doi.org/10.1109/HKEDM.1999.836401","url":null,"abstract":"This paper presents the bifurcation behaviour of the transient response of vertical cavity surface emitting lasers (VCSELs) with different aperture sizes. It is shown that lasers with small aperture size suppress higher order bifurcations and chaos even under large signal modulation and external optical feedback. Therefore, VCSELs with small aperture size have better immunity to irregular response under direct current modulation and external optical feedback.","PeriodicalId":342844,"journal":{"name":"Proceedings 1999 IEEE Hong Kong Electron Devices Meeting (Cat. No.99TH8458)","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115775070","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1999-06-26DOI: 10.1109/HKEDM.1999.836399
Z. Gao, C. Lee, S. Lee
Organic electroluminescent (EL) devices with a configuration of glass/indium tin oxide (ITO)//spl alpha/-naphthylphenylbiphenyl amine (NPB)/Tris-(8-hdroxyquinoline) aluminum (Alq/sub 3/)/Mg:Ag have been fabricated by vacuum deposition at different substrate temperatures. In some of the devices, the substrate temperature during deposition of the NPB layers is above its glass transition temperature. Raman spectroscopy confirms that the NPB layer so obtained is crystalline. EL performance of the devices have been measured and compared. Contrary to the common believes, substantial increases in luminescent efficiency and brightness have been observed in the devices with a crystalline NPB layer. Storage stability of the devices in air has also been studied.
{"title":"The influence of deposition substrate temperature on the performance of organic electroluminescent devices","authors":"Z. Gao, C. Lee, S. Lee","doi":"10.1109/HKEDM.1999.836399","DOIUrl":"https://doi.org/10.1109/HKEDM.1999.836399","url":null,"abstract":"Organic electroluminescent (EL) devices with a configuration of glass/indium tin oxide (ITO)//spl alpha/-naphthylphenylbiphenyl amine (NPB)/Tris-(8-hdroxyquinoline) aluminum (Alq/sub 3/)/Mg:Ag have been fabricated by vacuum deposition at different substrate temperatures. In some of the devices, the substrate temperature during deposition of the NPB layers is above its glass transition temperature. Raman spectroscopy confirms that the NPB layer so obtained is crystalline. EL performance of the devices have been measured and compared. Contrary to the common believes, substantial increases in luminescent efficiency and brightness have been observed in the devices with a crystalline NPB layer. Storage stability of the devices in air has also been studied.","PeriodicalId":342844,"journal":{"name":"Proceedings 1999 IEEE Hong Kong Electron Devices Meeting (Cat. No.99TH8458)","volume":"77 6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123337737","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1999-06-26DOI: 10.1109/HKEDM.1999.836418
Han-Chen Huang, G. Gilmer
As a result of miniaturization of electronic devices, linear dimension of interconnect metal lines is approaching 0.1 micron. As a result, resistance of the metal lines to electromigration failures is affected or even dictated by their atomic structure. To rigorously simulate the atomic structures, we have developed an atomistic simulator for processing of the interconnect metal lines. The simulator is based on a hierarchy of methods including first principles, molecular dynamics, and Monte Carlo methods. Our simulation results of texture competition agree with available experimental observations.
{"title":"Atomistic simulations of interconnect metallization","authors":"Han-Chen Huang, G. Gilmer","doi":"10.1109/HKEDM.1999.836418","DOIUrl":"https://doi.org/10.1109/HKEDM.1999.836418","url":null,"abstract":"As a result of miniaturization of electronic devices, linear dimension of interconnect metal lines is approaching 0.1 micron. As a result, resistance of the metal lines to electromigration failures is affected or even dictated by their atomic structure. To rigorously simulate the atomic structures, we have developed an atomistic simulator for processing of the interconnect metal lines. The simulator is based on a hierarchy of methods including first principles, molecular dynamics, and Monte Carlo methods. Our simulation results of texture competition agree with available experimental observations.","PeriodicalId":342844,"journal":{"name":"Proceedings 1999 IEEE Hong Kong Electron Devices Meeting (Cat. No.99TH8458)","volume":"94 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131870362","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1999-06-26DOI: 10.1109/HKEDM.1999.836405
P. Lai, J. Xu, C. Chan, Y. Cheng
Effects of pre-oxidation NH/sub 3/ treatment and post-oxidation N/sub 2/O annealing on n-SiC/SiO/sub 2/ interface properties were investigated as compared to conventional thermally-oxidized devices. It was found that NH/sub 3/ treatment before oxidation is beneficial for the interface-quality improvement. Moreover, the combination of NH/sub 3/ treatment with N/sub 2/O annealing can further harden the SiC/SiO/sub 2/ interface, enhancing its resistance against high-field and high-temperature stressings.
{"title":"Interface properties of N/sub 2/O-annealed NH/sub 3/-treated 6H-SiC MOS capacitor","authors":"P. Lai, J. Xu, C. Chan, Y. Cheng","doi":"10.1109/HKEDM.1999.836405","DOIUrl":"https://doi.org/10.1109/HKEDM.1999.836405","url":null,"abstract":"Effects of pre-oxidation NH/sub 3/ treatment and post-oxidation N/sub 2/O annealing on n-SiC/SiO/sub 2/ interface properties were investigated as compared to conventional thermally-oxidized devices. It was found that NH/sub 3/ treatment before oxidation is beneficial for the interface-quality improvement. Moreover, the combination of NH/sub 3/ treatment with N/sub 2/O annealing can further harden the SiC/SiO/sub 2/ interface, enhancing its resistance against high-field and high-temperature stressings.","PeriodicalId":342844,"journal":{"name":"Proceedings 1999 IEEE Hong Kong Electron Devices Meeting (Cat. No.99TH8458)","volume":"356 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133698349","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1999-06-26DOI: 10.1109/HKEDM.1999.836411
W. Sun, T. Mei, W.J. Li
A novel MEMS surface-micromachined non-contact high-speed rotation sensor with total surface area under 4 mm/sup 2/ is now under development. Various versions of the sensor have been designed and were fabricated using the MCNC Multi-User MEMS Processes (MUMPs). This paper reports the initial characterization of the sensor and presents the results of transmitting the sensor data via a commercial wireless transmission chip. Initial results indicate that this piezoresistive sensor is capable of measuring rotation speeds from 1000 to 4000 rpm with linear output. The responsivity of the sensor is 3Hz/rpm in this region.
{"title":"A foundry fabricated surface-micromachined high-speed rotation sensor using wireless transmission","authors":"W. Sun, T. Mei, W.J. Li","doi":"10.1109/HKEDM.1999.836411","DOIUrl":"https://doi.org/10.1109/HKEDM.1999.836411","url":null,"abstract":"A novel MEMS surface-micromachined non-contact high-speed rotation sensor with total surface area under 4 mm/sup 2/ is now under development. Various versions of the sensor have been designed and were fabricated using the MCNC Multi-User MEMS Processes (MUMPs). This paper reports the initial characterization of the sensor and presents the results of transmitting the sensor data via a commercial wireless transmission chip. Initial results indicate that this piezoresistive sensor is capable of measuring rotation speeds from 1000 to 4000 rpm with linear output. The responsivity of the sensor is 3Hz/rpm in this region.","PeriodicalId":342844,"journal":{"name":"Proceedings 1999 IEEE Hong Kong Electron Devices Meeting (Cat. No.99TH8458)","volume":"147 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116044114","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1999-06-26DOI: 10.1109/HKEDM.1999.836423
L. Wenhua, L. Zhigang
A mathematical model of the contact resistance of electrical apparatus contacts and its dynamic changing law are discussed, and a new testing instrument for the dynamic contact process of low-capacitance contacts (mainly relay contacts) is introduced.
{"title":"A testing instrument for dynamic contact resistance","authors":"L. Wenhua, L. Zhigang","doi":"10.1109/HKEDM.1999.836423","DOIUrl":"https://doi.org/10.1109/HKEDM.1999.836423","url":null,"abstract":"A mathematical model of the contact resistance of electrical apparatus contacts and its dynamic changing law are discussed, and a new testing instrument for the dynamic contact process of low-capacitance contacts (mainly relay contacts) is introduced.","PeriodicalId":342844,"journal":{"name":"Proceedings 1999 IEEE Hong Kong Electron Devices Meeting (Cat. No.99TH8458)","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127259731","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1999-06-26DOI: 10.1109/HKEDM.1999.836414
C.C. Ma, Z. Wu, Q. Sun, Y. Zohar, M. Wong
Nickel titanium (TiNi) shape memory alloy thin film is a promising candidate for microactuation because of its large deformation and recovery force, good electrical and mechanical properties, long fatigue life, and high corrosion resistance.
{"title":"TiNi shape memory alloy thin film rotating actuator","authors":"C.C. Ma, Z. Wu, Q. Sun, Y. Zohar, M. Wong","doi":"10.1109/HKEDM.1999.836414","DOIUrl":"https://doi.org/10.1109/HKEDM.1999.836414","url":null,"abstract":"Nickel titanium (TiNi) shape memory alloy thin film is a promising candidate for microactuation because of its large deformation and recovery force, good electrical and mechanical properties, long fatigue life, and high corrosion resistance.","PeriodicalId":342844,"journal":{"name":"Proceedings 1999 IEEE Hong Kong Electron Devices Meeting (Cat. No.99TH8458)","volume":"51 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128068026","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1999-06-26DOI: 10.1109/HKEDM.1999.836397
C. S. Wong, G.M. Dai, H. Tsang
We show that ion-damaged GaAs may be used to detect millimetre electromagnetic waves in photoconductive sampling gates. The semi-insulating GaAs material which was implanted with a dose of 10/sup 14/ cm/sup -2/ protons at an energy of 200 keV gave a signal to noise improvement of about 11.4 dB when compared with as-grown semi-insulating GaAs. The improvement is in spite of reduced carrier mobility in the ion-implanted material and is due to the shorter carrier lifetime and formation of Ohmic contacts with the ion-damaged semi-insulating GaAs.
{"title":"Photoconductive detection of millimetre waves using proton bombarded GaAs","authors":"C. S. Wong, G.M. Dai, H. Tsang","doi":"10.1109/HKEDM.1999.836397","DOIUrl":"https://doi.org/10.1109/HKEDM.1999.836397","url":null,"abstract":"We show that ion-damaged GaAs may be used to detect millimetre electromagnetic waves in photoconductive sampling gates. The semi-insulating GaAs material which was implanted with a dose of 10/sup 14/ cm/sup -2/ protons at an energy of 200 keV gave a signal to noise improvement of about 11.4 dB when compared with as-grown semi-insulating GaAs. The improvement is in spite of reduced carrier mobility in the ion-implanted material and is due to the shorter carrier lifetime and formation of Ohmic contacts with the ion-damaged semi-insulating GaAs.","PeriodicalId":342844,"journal":{"name":"Proceedings 1999 IEEE Hong Kong Electron Devices Meeting (Cat. No.99TH8458)","volume":"72 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129229691","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1999-06-26DOI: 10.1109/HKEDM.1999.836412
P. Lai, Bin Li, G.Q. Li
A novel strontium titanate-niobate (SrNb/sub x/Ti/sub 1-x/O/sub 3/) thin-film NTC (negative temperature coefficient) resistor is fabricated on a SiO/sub 2//Si substrate by rf sputtering technique. The resistance-temperature characteristics reveal that SrNb/sub x/Ti/sub 1-x/O/sub 3/ thin-film resistor has a high sensitivity within 30/spl deg/C/spl sim/400/spl deg/C. Specifically, there is a turning point at 320/spl deg/C, above which the resistance sharply decreases due to ionic conduction. The a.c characteristics are also investigated.
{"title":"Thin-film NTC resistor based on SrNb/sub x/Ti/sub 1-x/O/sub 3/","authors":"P. Lai, Bin Li, G.Q. Li","doi":"10.1109/HKEDM.1999.836412","DOIUrl":"https://doi.org/10.1109/HKEDM.1999.836412","url":null,"abstract":"A novel strontium titanate-niobate (SrNb/sub x/Ti/sub 1-x/O/sub 3/) thin-film NTC (negative temperature coefficient) resistor is fabricated on a SiO/sub 2//Si substrate by rf sputtering technique. The resistance-temperature characteristics reveal that SrNb/sub x/Ti/sub 1-x/O/sub 3/ thin-film resistor has a high sensitivity within 30/spl deg/C/spl sim/400/spl deg/C. Specifically, there is a turning point at 320/spl deg/C, above which the resistance sharply decreases due to ionic conduction. The a.c characteristics are also investigated.","PeriodicalId":342844,"journal":{"name":"Proceedings 1999 IEEE Hong Kong Electron Devices Meeting (Cat. No.99TH8458)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127211345","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1999-06-26DOI: 10.1109/HKEDM.1999.836425
R. Rao, T. C. Chong, L. Tan, W. S. Lau, J. Liou
An accurate physical analytical model has been described for output current-voltage characteristics and for describing the behavior of electron in LT-GaAs and LT-Al/sub 0.3/Ga/sub 0.7/As MISFET devices. The model is derived from basic semiconductor charge analysis. In this model, the Chang-Fetterman equation is used to approximate the electron drift velocity versus electric field. Excellent agreement with experimental results is shown.
{"title":"A physical analytical model for LT-GaAs and LT-Al/sub 0.3/Ga/sub 0.7/As MISFET devices","authors":"R. Rao, T. C. Chong, L. Tan, W. S. Lau, J. Liou","doi":"10.1109/HKEDM.1999.836425","DOIUrl":"https://doi.org/10.1109/HKEDM.1999.836425","url":null,"abstract":"An accurate physical analytical model has been described for output current-voltage characteristics and for describing the behavior of electron in LT-GaAs and LT-Al/sub 0.3/Ga/sub 0.7/As MISFET devices. The model is derived from basic semiconductor charge analysis. In this model, the Chang-Fetterman equation is used to approximate the electron drift velocity versus electric field. Excellent agreement with experimental results is shown.","PeriodicalId":342844,"journal":{"name":"Proceedings 1999 IEEE Hong Kong Electron Devices Meeting (Cat. No.99TH8458)","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123902099","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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