Pub Date : 1990-06-03DOI: 10.1109/NUPAD.1990.748255
J. Brockman, S. W. Director
{"title":"A macromodeling Approach To Process Simulator Tuning","authors":"J. Brockman, S. W. Director","doi":"10.1109/NUPAD.1990.748255","DOIUrl":"https://doi.org/10.1109/NUPAD.1990.748255","url":null,"abstract":"","PeriodicalId":348970,"journal":{"name":"Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits","volume":"44 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130204659","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1990-06-03DOI: 10.1109/NUPAD.1990.748279
Xiao‐Bo Tian, A. Strojwas
{"title":"Numerical Integral Method For 2d Diffusion Simulation","authors":"Xiao‐Bo Tian, A. Strojwas","doi":"10.1109/NUPAD.1990.748279","DOIUrl":"https://doi.org/10.1109/NUPAD.1990.748279","url":null,"abstract":"","PeriodicalId":348970,"journal":{"name":"Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127678168","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1990-06-03DOI: 10.1109/NUPAD.1990.748269
W. Quade, M. Rudan
{"title":"Hydrodynamic Simulation Of P-n Junctions In The Breakdown Regime","authors":"W. Quade, M. Rudan","doi":"10.1109/NUPAD.1990.748269","DOIUrl":"https://doi.org/10.1109/NUPAD.1990.748269","url":null,"abstract":"","PeriodicalId":348970,"journal":{"name":"Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123237411","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1990-06-03DOI: 10.1109/NUPAD.1990.748265
P. Blakey, X. Wang, C. Maziar
{"title":"A Generalized Formulation of Augmented Drift-Diffusion Transport Suitable for Use in General Purpose Device Simulators","authors":"P. Blakey, X. Wang, C. Maziar","doi":"10.1109/NUPAD.1990.748265","DOIUrl":"https://doi.org/10.1109/NUPAD.1990.748265","url":null,"abstract":"","PeriodicalId":348970,"journal":{"name":"Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115910078","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1990-06-03DOI: 10.1109/NUPAD.1990.748288
J.F. Bilrgler, W. M. Coughran, W. Fichtner
{"title":"An Adaptive Grid Refinement Strategy for the Drift-Diffusion","authors":"J.F. Bilrgler, W. M. Coughran, W. Fichtner","doi":"10.1109/NUPAD.1990.748288","DOIUrl":"https://doi.org/10.1109/NUPAD.1990.748288","url":null,"abstract":"","PeriodicalId":348970,"journal":{"name":"Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits","volume":"60 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124685593","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1990-06-03DOI: 10.1109/NUPAD.1990.748252
M. Paffrath, K. Steger
{"title":"Numerical Solution Of Diffusion Equations On Time-variant Domains","authors":"M. Paffrath, K. Steger","doi":"10.1109/NUPAD.1990.748252","DOIUrl":"https://doi.org/10.1109/NUPAD.1990.748252","url":null,"abstract":"","PeriodicalId":348970,"journal":{"name":"Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131329957","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1990-06-03DOI: 10.1109/NUPAD.1990.748262
J. Chern, K. Mayaram, L. Arledge, P. Yang
{"title":"A Concurrent Conjugate-gradient-based 3-d Device Equation Solver Including Latency","authors":"J. Chern, K. Mayaram, L. Arledge, P. Yang","doi":"10.1109/NUPAD.1990.748262","DOIUrl":"https://doi.org/10.1109/NUPAD.1990.748262","url":null,"abstract":"","PeriodicalId":348970,"journal":{"name":"Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125971907","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1990-06-03DOI: 10.1109/NUPAD.1990.748259
P. Conti, N. Hitschfeld, W. Fichtner
{"title":"/spl Omega/ - An Octree-based Mixed Element Grid Allocator For Adaptive 3d Device Simulation","authors":"P. Conti, N. Hitschfeld, W. Fichtner","doi":"10.1109/NUPAD.1990.748259","DOIUrl":"https://doi.org/10.1109/NUPAD.1990.748259","url":null,"abstract":"","PeriodicalId":348970,"journal":{"name":"Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits","volume":"112 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123046529","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1990-06-03DOI: 10.1109/NUPAD.1990.748282
H. Masuda, R. Ikematsu, J. Mano, H. Sugihara
This paper presents a new circuit model for sub-um NMOSFETs and describes experiments on them. The model is focused on the temperature effect on I-V and CV characteristics. The resulting I-V modeling error (RMS: Root Mean Square) is verified to be less than 1.5% for Vd=O-SV and Vg=O-SV operating conditions, and 300-450K temperature range. The CV model error also examined, showing 6.0% at 400K. Drain current characteristics were measured with a 0.8um NMOS under various temperature conditions. Through experiments and parameter extraction (for MOSTSM model[ 1][2]) on the measured I-V data, the following results are noted (see Fig. 1). (1) Channel conductance of a unit area (Po) exhibits a significant decrease (one half) for the temperature rise from 300K to 450K. However, the corresponding drain current reduction is only 20% at Vds=Vgs=SV. (2) The above effect is caused by a change in the gate-field effect factor of channelconductance (eel ), which shows a monotonic decrease for rising temperature [4]. MOST temperature model
{"title":"Mosfet Submicron Model For Temperature Effect Characterization","authors":"H. Masuda, R. Ikematsu, J. Mano, H. Sugihara","doi":"10.1109/NUPAD.1990.748282","DOIUrl":"https://doi.org/10.1109/NUPAD.1990.748282","url":null,"abstract":"This paper presents a new circuit model for sub-um NMOSFETs and describes experiments on them. The model is focused on the temperature effect on I-V and CV characteristics. The resulting I-V modeling error (RMS: Root Mean Square) is verified to be less than 1.5% for Vd=O-SV and Vg=O-SV operating conditions, and 300-450K temperature range. The CV model error also examined, showing 6.0% at 400K. Drain current characteristics were measured with a 0.8um NMOS under various temperature conditions. Through experiments and parameter extraction (for MOSTSM model[ 1][2]) on the measured I-V data, the following results are noted (see Fig. 1). (1) Channel conductance of a unit area (Po) exhibits a significant decrease (one half) for the temperature rise from 300K to 450K. However, the corresponding drain current reduction is only 20% at Vds=Vgs=SV. (2) The above effect is caused by a change in the gate-field effect factor of channelconductance (eel ), which shows a monotonic decrease for rising temperature [4]. MOST temperature model","PeriodicalId":348970,"journal":{"name":"Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133592265","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1990-06-03DOI: 10.1109/NUPAD.1990.748292
H. Oda, N. Kotani, M. Shirahata, M. Fujinaga, Y. Akasaka
{"title":"Comparison Between Drift-diffusion Model And Hydrodynamic Model For Sub-micron Mosfets","authors":"H. Oda, N. Kotani, M. Shirahata, M. Fujinaga, Y. Akasaka","doi":"10.1109/NUPAD.1990.748292","DOIUrl":"https://doi.org/10.1109/NUPAD.1990.748292","url":null,"abstract":"","PeriodicalId":348970,"journal":{"name":"Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits","volume":"4312 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128300681","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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