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Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits最新文献

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Device Simulation Intending Small Scale Circuit Level Analysis 用于小电路级分析的器件仿真
Pub Date : 1990-06-03 DOI: 10.1109/NUPAD.1990.748284
T. Kobori
{"title":"Device Simulation Intending Small Scale Circuit Level Analysis","authors":"T. Kobori","doi":"10.1109/NUPAD.1990.748284","DOIUrl":"https://doi.org/10.1109/NUPAD.1990.748284","url":null,"abstract":"","PeriodicalId":348970,"journal":{"name":"Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124645622","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
An Efficient Monte Carlo Simulator For High-energy Electrons And Holes In Mospet's Mospet中高能电子和空穴的高效蒙特卡罗模拟器
Pub Date : 1990-06-03 DOI: 10.1109/NUPAD.1990.748268
P. Venturi, E. Sangiorgi, R. Brunetti, W. Quade, C. Jacoboni, D. Ricco
{"title":"An Efficient Monte Carlo Simulator For High-energy Electrons And Holes In Mospet's","authors":"P. Venturi, E. Sangiorgi, R. Brunetti, W. Quade, C. Jacoboni, D. Ricco","doi":"10.1109/NUPAD.1990.748268","DOIUrl":"https://doi.org/10.1109/NUPAD.1990.748268","url":null,"abstract":"","PeriodicalId":348970,"journal":{"name":"Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128800979","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Intelligent Simulation for OPtimization of Fabrication Processes 制造工艺优化的智能仿真
Pub Date : 1990-06-03 DOI: 10.1109/NUPAD.1990.748254
J.S. Wenstrand, H. Iwai, M. Norishima, H. Tanimoto, T. Wada, R. Dutton
{"title":"Intelligent Simulation for OPtimization of Fabrication Processes","authors":"J.S. Wenstrand, H. Iwai, M. Norishima, H. Tanimoto, T. Wada, R. Dutton","doi":"10.1109/NUPAD.1990.748254","DOIUrl":"https://doi.org/10.1109/NUPAD.1990.748254","url":null,"abstract":"","PeriodicalId":348970,"journal":{"name":"Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits","volume":"208 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127600074","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
An Improved Model for Ion Implantation in Two-Dimensions and Application to the Analysis of LDD Device Performance 一个改进的二维离子注入模型及其在LDD器件性能分析中的应用
Pub Date : 1990-06-03 DOI: 10.1109/NUPAD.1990.748293
T.L. Crandle, S.J. Motzny, D. E. Ward, W. Grabowski, R. Pack
{"title":"An Improved Model for Ion Implantation in Two-Dimensions and Application to the Analysis of LDD Device Performance","authors":"T.L. Crandle, S.J. Motzny, D. E. Ward, W. Grabowski, R. Pack","doi":"10.1109/NUPAD.1990.748293","DOIUrl":"https://doi.org/10.1109/NUPAD.1990.748293","url":null,"abstract":"","PeriodicalId":348970,"journal":{"name":"Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134352538","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A Supervised Process And Device Simulation For Statistical Vlsi Design 统计Vlsi设计的监督过程与器件仿真
Pub Date : 1990-06-03 DOI: 10.1109/NUPAD.1990.748276
H. Matsuo, H. Masuda, S. Yamamoto, T. Toyabe
{"title":"A Supervised Process And Device Simulation For Statistical Vlsi Design","authors":"H. Matsuo, H. Masuda, S. Yamamoto, T. Toyabe","doi":"10.1109/NUPAD.1990.748276","DOIUrl":"https://doi.org/10.1109/NUPAD.1990.748276","url":null,"abstract":"","PeriodicalId":348970,"journal":{"name":"Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134481914","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
A Parallel Nonlinear Block Iterative Method For The Hydrodynamic Device Model: Subsonic And Transonic Flow 流体动力装置模型的并行非线性块迭代法:亚音速和跨音速流动
Pub Date : 1990-06-03 DOI: 10.1109/NUPAD.1990.748291
C. Gardner, P. Lanzkron, D. Rose
{"title":"A Parallel Nonlinear Block Iterative Method For The Hydrodynamic Device Model: Subsonic And Transonic Flow","authors":"C. Gardner, P. Lanzkron, D. Rose","doi":"10.1109/NUPAD.1990.748291","DOIUrl":"https://doi.org/10.1109/NUPAD.1990.748291","url":null,"abstract":"","PeriodicalId":348970,"journal":{"name":"Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128558004","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Analysis Of Sidewall Lateral Parasitic Leakage In A 16-mb Dram Cell 16mb Dram单元侧壁侧向寄生泄漏分析
Pub Date : 1990-06-03 DOI: 10.1109/NUPAD.1990.748258
S.P. Geissler, J. Mandelman
{"title":"Analysis Of Sidewall Lateral Parasitic Leakage In A 16-mb Dram Cell","authors":"S.P. Geissler, J. Mandelman","doi":"10.1109/NUPAD.1990.748258","DOIUrl":"https://doi.org/10.1109/NUPAD.1990.748258","url":null,"abstract":"","PeriodicalId":348970,"journal":{"name":"Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133456644","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Numerical Modeling Of Optical Metrology Schemes For IC Line-width Measurements 集成电路线宽测量光学测量方案的数值模拟
Pub Date : 1990-06-03 DOI: 10.1109/NUPAD.1990.748248
C. Yuan, A. Strojwas
{"title":"Numerical Modeling Of Optical Metrology Schemes For IC Line-width Measurements","authors":"C. Yuan, A. Strojwas","doi":"10.1109/NUPAD.1990.748248","DOIUrl":"https://doi.org/10.1109/NUPAD.1990.748248","url":null,"abstract":"","PeriodicalId":348970,"journal":{"name":"Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128912995","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A STRIDE Towards Practical 3D Device Simulation - Computational and Visualization Considerations 迈向实用的3D装置模拟-计算和可视化的考虑
Pub Date : 1990-06-03 DOI: 10.1109/NUPAD.1990.748257
G. Chin, K. Wu, R. Dutton
{"title":"A STRIDE Towards Practical 3D Device Simulation - Computational and Visualization Considerations","authors":"G. Chin, K. Wu, R. Dutton","doi":"10.1109/NUPAD.1990.748257","DOIUrl":"https://doi.org/10.1109/NUPAD.1990.748257","url":null,"abstract":"","PeriodicalId":348970,"journal":{"name":"Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116940427","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Saturn - A Device Engineer's Tool For Optimizing Mosfet Performance And Lifetime 土星-一个设备工程师优化Mosfet性能和寿命的工具
Pub Date : 1990-06-03 DOI: 10.1109/NUPAD.1990.748274
H. Jacobs, W. Hinsch, F. Hofmann, W. Jacobs, M. Paffrath, E. Rank, K. Steger, U. Weinert
{"title":"Saturn - A Device Engineer's Tool For Optimizing Mosfet Performance And Lifetime","authors":"H. Jacobs, W. Hinsch, F. Hofmann, W. Jacobs, M. Paffrath, E. Rank, K. Steger, U. Weinert","doi":"10.1109/NUPAD.1990.748274","DOIUrl":"https://doi.org/10.1109/NUPAD.1990.748274","url":null,"abstract":"","PeriodicalId":348970,"journal":{"name":"Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122276595","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
期刊
Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits
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