Pub Date : 2009-10-30DOI: 10.1109/ASEMD.2009.5306672
P. Chao, Xunbo Li, Guangxu Qin
Inspection of welding precision is important to ensure the quality of High Voltage Ceramic Capacitor (HVCC). The purpose of this paper is to propose an automatic inspection method which is used to check the parallelism and position after welding. The method is, firstly, capture images with the help of a CCD camera. Next, detect edge with Canny operator. Thirdly, use modified Hough transform to find circles for parallelism checking. Fourthly, execute the parallelism inspection in the way of comparing distance. Fifthly, use the least square method to ascertain circles for position checking. Last, execute position inspection in the way of intersecting circles. In experiments of three different sizes HVCC, the proposed method is proved to be very effective.
{"title":"An automatic inspection method of welding precision for high voltage ceramic capacitor","authors":"P. Chao, Xunbo Li, Guangxu Qin","doi":"10.1109/ASEMD.2009.5306672","DOIUrl":"https://doi.org/10.1109/ASEMD.2009.5306672","url":null,"abstract":"Inspection of welding precision is important to ensure the quality of High Voltage Ceramic Capacitor (HVCC). The purpose of this paper is to propose an automatic inspection method which is used to check the parallelism and position after welding. The method is, firstly, capture images with the help of a CCD camera. Next, detect edge with Canny operator. Thirdly, use modified Hough transform to find circles for parallelism checking. Fourthly, execute the parallelism inspection in the way of comparing distance. Fifthly, use the least square method to ascertain circles for position checking. Last, execute position inspection in the way of intersecting circles. In experiments of three different sizes HVCC, the proposed method is proved to be very effective.","PeriodicalId":354649,"journal":{"name":"2009 International Conference on Applied Superconductivity and Electromagnetic Devices","volume":"50 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126943828","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-10-30DOI: 10.1109/ASEMD.2009.5306642
X. Pang, Bo Deng
The properties of water and its changes under actions of magnetic-fields are gathered by the spectrum techniques of infrared, Raman, visible, ultraviolet and X-ray lights, which can have an insight into molecular and atomic structures of water. We find that some properties of water are changed, a lot of new and strange phenomena are discovered after magnetization. We obtained that magnetized water has really magnetism, which is verified by a peak shift of X-ray diffraction of magnetized water +Fe2O3 hybrid relative to that of pure water +Fe2O3 hybrid, a saturation and memory effect. At the same time, the properties of infrared and ultraviolet absorptions, Raman scattering and X-ray diffraction of magnetized water are greatly changed relative to that of pure water, their strengths of peaks are all increased, the frequencies of some peaks do also shift, some new peaks, for example, 5198 cm−1, 8050 cm−1 and 9340 cm−1 occur at the temperature of 250 °C after water is magnetized. In the meanwhile, the magnetized effects of water relate to the magnetized time and the intensity of an externally applied magnetic-field and temperature of water, but they are not a linear relationship. We find also occurrences of a lot of new and unusual properties of magnetized water, for example, the six peaks in 3000–3800 cm−1 in infrared absorption, the exponential increase of ultraviolet absorption of wave with decreasing wavelength of light in the 200–300 nm, These results show that molecular structure of water is very complicated, which need study deeply.
{"title":"Investigation of magnetic-field effects on water","authors":"X. Pang, Bo Deng","doi":"10.1109/ASEMD.2009.5306642","DOIUrl":"https://doi.org/10.1109/ASEMD.2009.5306642","url":null,"abstract":"The properties of water and its changes under actions of magnetic-fields are gathered by the spectrum techniques of infrared, Raman, visible, ultraviolet and X-ray lights, which can have an insight into molecular and atomic structures of water. We find that some properties of water are changed, a lot of new and strange phenomena are discovered after magnetization. We obtained that magnetized water has really magnetism, which is verified by a peak shift of X-ray diffraction of magnetized water +Fe2O3 hybrid relative to that of pure water +Fe2O3 hybrid, a saturation and memory effect. At the same time, the properties of infrared and ultraviolet absorptions, Raman scattering and X-ray diffraction of magnetized water are greatly changed relative to that of pure water, their strengths of peaks are all increased, the frequencies of some peaks do also shift, some new peaks, for example, 5198 cm−1, 8050 cm−1 and 9340 cm−1 occur at the temperature of 250 °C after water is magnetized. In the meanwhile, the magnetized effects of water relate to the magnetized time and the intensity of an externally applied magnetic-field and temperature of water, but they are not a linear relationship. We find also occurrences of a lot of new and unusual properties of magnetized water, for example, the six peaks in 3000–3800 cm−1 in infrared absorption, the exponential increase of ultraviolet absorption of wave with decreasing wavelength of light in the 200–300 nm, These results show that molecular structure of water is very complicated, which need study deeply.","PeriodicalId":354649,"journal":{"name":"2009 International Conference on Applied Superconductivity and Electromagnetic Devices","volume":"213 10","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"113997694","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-10-30DOI: 10.1109/ASEMD.2009.5306676
Shuyan Jiang, Yong-Le Xie, Dajin Yu, Gang Luo
Fault and fault model is the fundament of IC diagnosis. Fault model based on IDDT and its test is the hot issue of modern IC fault diagnosis at present. Open and short fault models of inverter, NAND gate, and SRAM of CMOS technology were built in this paper. In the experiments, we selected the deep sub-micron of 0.18 μm CMOS technology to simulate with HSPICE. The simulations of IDDT waveforms and FFT transform waveforms of different fault models were made and the results were indicated that the IDDT test method can detect the open and short fault of CMOS devices effectively.
{"title":"Experiment and simulation of transistor level fault model of IDDT test","authors":"Shuyan Jiang, Yong-Le Xie, Dajin Yu, Gang Luo","doi":"10.1109/ASEMD.2009.5306676","DOIUrl":"https://doi.org/10.1109/ASEMD.2009.5306676","url":null,"abstract":"Fault and fault model is the fundament of IC diagnosis. Fault model based on IDDT and its test is the hot issue of modern IC fault diagnosis at present. Open and short fault models of inverter, NAND gate, and SRAM of CMOS technology were built in this paper. In the experiments, we selected the deep sub-micron of 0.18 μm CMOS technology to simulate with HSPICE. The simulations of IDDT waveforms and FFT transform waveforms of different fault models were made and the results were indicated that the IDDT test method can detect the open and short fault of CMOS devices effectively.","PeriodicalId":354649,"journal":{"name":"2009 International Conference on Applied Superconductivity and Electromagnetic Devices","volume":"55 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123792176","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-10-30DOI: 10.1109/ASEMD.2009.5306621
L. Zhang, Z. W. Zhu, L. Deng
The microstructure and electromagnetic properties of FeCoB-SiO2 thin films which were deposited on different substrates (silicon, glass and Mylar) by using magnetron sputtering were studied. X-Ray Diffraction revealed that FeCo nanocrystalline only precipitated in FeCoB-SiO2 thin films on silicon and glass substrates, and the FeCoB-SiO2 films on Mylar substrate were amorphous. The surface images obtained by atomic microscopy (AFM) indicated that films on Mylar substrate with biggest particle size (about 120–150 nm), and agglomerated particle was discovered. The static electromagnetic properties, including resistivity and saturation magnetization for the films on different substrates, had also been investigated. The films sputtered on glass showed highest resistivity (2140 μΩcm) and a biggest saturation magnetization (4πMs = 13 kG).
{"title":"Substrates influence on the structure and static electromagnetic properties of FeCoB-SiO2 thin films","authors":"L. Zhang, Z. W. Zhu, L. Deng","doi":"10.1109/ASEMD.2009.5306621","DOIUrl":"https://doi.org/10.1109/ASEMD.2009.5306621","url":null,"abstract":"The microstructure and electromagnetic properties of FeCoB-SiO2 thin films which were deposited on different substrates (silicon, glass and Mylar) by using magnetron sputtering were studied. X-Ray Diffraction revealed that FeCo nanocrystalline only precipitated in FeCoB-SiO2 thin films on silicon and glass substrates, and the FeCoB-SiO2 films on Mylar substrate were amorphous. The surface images obtained by atomic microscopy (AFM) indicated that films on Mylar substrate with biggest particle size (about 120–150 nm), and agglomerated particle was discovered. The static electromagnetic properties, including resistivity and saturation magnetization for the films on different substrates, had also been investigated. The films sputtered on glass showed highest resistivity (2140 μΩcm) and a biggest saturation magnetization (4πMs = 13 kG).","PeriodicalId":354649,"journal":{"name":"2009 International Conference on Applied Superconductivity and Electromagnetic Devices","volume":"310 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116757758","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-10-30DOI: 10.1109/ASEMD.2009.5306671
Libo Zhuang, S. Bao, Rong Wang, Shilan Li, Lili Ma, Dechun Lv
A non-destructive method for measuring the thickness of thin films deposited on a substrate has been developed with a conventional scanning electron microscope (SEM) equipped with ultra-thin window energy dispersive X-ray spectrometer (EDS). It is based physically on that the penetrant depth of electrons decreased as the accelerate voltage of incident electron lowered. By measuring the intensity ratio of an X-ray peak of the thin film to one of substrate at different accelerate voltage; the relation of intensity ratio of Is/If with electron energy is obtained. And when the penetrant depth of electrons is equal to the films thickness, change of the ratios both films and bulk standard is identical, theoretically. Then the thickness of thin films can be calculated by combining the expression of the experimental data and Sewell's formula. The thicknesses of FeCoSiB compound films on glass substrate were determined by this method. Comparing the results with the data taken from the stylus profilometry measurement, it shows that the method of measuring the thickness of thin films by EDS is reasonable and practicable.
{"title":"Thin film thickness measurement using electron probe microanalyzer","authors":"Libo Zhuang, S. Bao, Rong Wang, Shilan Li, Lili Ma, Dechun Lv","doi":"10.1109/ASEMD.2009.5306671","DOIUrl":"https://doi.org/10.1109/ASEMD.2009.5306671","url":null,"abstract":"A non-destructive method for measuring the thickness of thin films deposited on a substrate has been developed with a conventional scanning electron microscope (SEM) equipped with ultra-thin window energy dispersive X-ray spectrometer (EDS). It is based physically on that the penetrant depth of electrons decreased as the accelerate voltage of incident electron lowered. By measuring the intensity ratio of an X-ray peak of the thin film to one of substrate at different accelerate voltage; the relation of intensity ratio of Is/If with electron energy is obtained. And when the penetrant depth of electrons is equal to the films thickness, change of the ratios both films and bulk standard is identical, theoretically. Then the thickness of thin films can be calculated by combining the expression of the experimental data and Sewell's formula. The thicknesses of FeCoSiB compound films on glass substrate were determined by this method. Comparing the results with the data taken from the stylus profilometry measurement, it shows that the method of measuring the thickness of thin films by EDS is reasonable and practicable.","PeriodicalId":354649,"journal":{"name":"2009 International Conference on Applied Superconductivity and Electromagnetic Devices","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129985280","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-10-30DOI: 10.1109/ASEMD.2009.5306665
Y. Liu, Chuan-ren Yang, Jihua Zhang, Song Wu, Hongwei Chen
In this paper, we take account of spontaneous and piezoelectric polarization effect of BST and AlGaN. At the hetero-interface in BST/ Al0.3Ga0.7N /GaN double heterostructure, one-dimensional Poisson-Schrodinger equation using nonuniform mesh are solved self-consistently in dependence of the polarization and thickness of BST and the thickness of AlGaN barrier layer. BST/Al0.3Ga0.7N/GaN double heterostructure conduction band and the two-dimensional electron gas(2DEG) density are investigated. The results indicate that the 2DEG density of BST/Al0.3Ga0.7N/GaN is larger than that of Al0.3Ga0.7N/GaN, for a 8nm BST on AlGaN/GaN structure, the 2DEG density reached 1.85×1013 cm−2, which is 23% higher than that of AlGaN/GaN structure.
{"title":"The two dimensional eelectron gas in BST/Al0.3Ga0.7N/GaN double heterostructure","authors":"Y. Liu, Chuan-ren Yang, Jihua Zhang, Song Wu, Hongwei Chen","doi":"10.1109/ASEMD.2009.5306665","DOIUrl":"https://doi.org/10.1109/ASEMD.2009.5306665","url":null,"abstract":"In this paper, we take account of spontaneous and piezoelectric polarization effect of BST and AlGaN. At the hetero-interface in BST/ Al<inf>0.3</inf>Ga<inf>0.7</inf>N /GaN double heterostructure, one-dimensional Poisson-Schrodinger equation using nonuniform mesh are solved self-consistently in dependence of the polarization and thickness of BST and the thickness of AlGaN barrier layer. BST/Al<inf>0.3</inf>Ga<inf>0.7</inf>N/GaN double heterostructure conduction band and the two-dimensional electron gas(2DEG) density are investigated. The results indicate that the 2DEG density of BST/Al<inf>0.3</inf>Ga<inf>0.7</inf>N/GaN is larger than that of Al<inf>0.3</inf>Ga<inf>0.7</inf>N/GaN, for a 8nm BST on AlGaN/GaN structure, the 2DEG density reached 1.85×10<sup>13</sup> cm<sup>−2</sup>, which is 23% higher than that of AlGaN/GaN structure.","PeriodicalId":354649,"journal":{"name":"2009 International Conference on Applied Superconductivity and Electromagnetic Devices","volume":"273 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121409365","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-10-30DOI: 10.1109/ASEMD.2009.5306679
Jinghe Wei, Liming Qian, Zongguang Yu, Jiannan Yao, Longxing Shi
Digital calibration arithmetic becomes more and more widely applied in pipeline ADC with high precision, the structure of pipeline ADC based on digital calibration is commonly 1.5bit/stage presently. 2bit/stage, the structure of which has strong superiority in power consumption and chip size, is adopted in this paper after analyzing the advantages and disadvantages of different kinds of structures. An improved digital calibration arithmetic is designed, which has solved the problem of accuracy of calibrating coefficients in present arithmetic and made the calibrated output data more accurate. The result indicates that the improved digital calibration arithmetic makes the system linearity get highly upgraded.
{"title":"An improved design of digital calibration arithmetic applied in pipeline ADC","authors":"Jinghe Wei, Liming Qian, Zongguang Yu, Jiannan Yao, Longxing Shi","doi":"10.1109/ASEMD.2009.5306679","DOIUrl":"https://doi.org/10.1109/ASEMD.2009.5306679","url":null,"abstract":"Digital calibration arithmetic becomes more and more widely applied in pipeline ADC with high precision, the structure of pipeline ADC based on digital calibration is commonly 1.5bit/stage presently. 2bit/stage, the structure of which has strong superiority in power consumption and chip size, is adopted in this paper after analyzing the advantages and disadvantages of different kinds of structures. An improved digital calibration arithmetic is designed, which has solved the problem of accuracy of calibrating coefficients in present arithmetic and made the calibrated output data more accurate. The result indicates that the improved digital calibration arithmetic makes the system linearity get highly upgraded.","PeriodicalId":354649,"journal":{"name":"2009 International Conference on Applied Superconductivity and Electromagnetic Devices","volume":"55 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121655980","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-10-30DOI: 10.1109/ASEMD.2009.5306692
Zhixuan Wang, J. Qiu, Shuhong Wang, W. Gong, H. Hong, B. Tian
This paper proposed a design methodology of cold-dielectric (CD) high temperature superconducting (HTS) power transmission cables. The methodology covers the effects of the electrical and mechanical properties of both insulation materials and HTS tapes; the dimensions of the conductor layers, insulation layers, shield layers, the annular cooling gap and the cryostat. The selection of insulation materials and the design of conductor and shield layers are different from the warm dielectric HTS power cable design. Design of a prototype of CD HTS power cable, rated 10kV/1500A, has been performed. Further verification has shown that the presented design method is correct and efficient.
{"title":"Design of cold dielectric hts power cable","authors":"Zhixuan Wang, J. Qiu, Shuhong Wang, W. Gong, H. Hong, B. Tian","doi":"10.1109/ASEMD.2009.5306692","DOIUrl":"https://doi.org/10.1109/ASEMD.2009.5306692","url":null,"abstract":"This paper proposed a design methodology of cold-dielectric (CD) high temperature superconducting (HTS) power transmission cables. The methodology covers the effects of the electrical and mechanical properties of both insulation materials and HTS tapes; the dimensions of the conductor layers, insulation layers, shield layers, the annular cooling gap and the cryostat. The selection of insulation materials and the design of conductor and shield layers are different from the warm dielectric HTS power cable design. Design of a prototype of CD HTS power cable, rated 10kV/1500A, has been performed. Further verification has shown that the presented design method is correct and efficient.","PeriodicalId":354649,"journal":{"name":"2009 International Conference on Applied Superconductivity and Electromagnetic Devices","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122750303","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-10-30DOI: 10.1109/ASEMD.2009.5306661
Dao-hua Li
Under near ambient temperature and ultrasonication, the La(Oxin)3•3H2O (lanthanum 8-quinolinolate) nanocrystallite was synthesized by solid-state reaction. The solid phase was characterized by powder X-ray diffraction (XRD) and electron diffraction (ED). The particle size, its distribution, and morphology of the prepared nanocrystallite were observed by transmission electron microscopy (TEM). Results showed that the product was nanocrystallite with a uniform particle size and with an average size of about 50 nm, and the yield rate of nanocrystalline La(Oxin)3•3H2O is approximately 95.9 %. During the synthesis of La(Oxin)3•3H2O nanocrystallite, the types of factors influencing the final product under different solid-state reaction conditions such as reactant, changing the proportions of reactant, addition of inert substances, mixing of trace solvent or surfactant and time of porphyrizing was also observed.
{"title":"Solid-state synthesis and characterization of nanocrystalline rare earth compound under ultrasonication","authors":"Dao-hua Li","doi":"10.1109/ASEMD.2009.5306661","DOIUrl":"https://doi.org/10.1109/ASEMD.2009.5306661","url":null,"abstract":"Under near ambient temperature and ultrasonication, the La(Oxin)3•3H2O (lanthanum 8-quinolinolate) nanocrystallite was synthesized by solid-state reaction. The solid phase was characterized by powder X-ray diffraction (XRD) and electron diffraction (ED). The particle size, its distribution, and morphology of the prepared nanocrystallite were observed by transmission electron microscopy (TEM). Results showed that the product was nanocrystallite with a uniform particle size and with an average size of about 50 nm, and the yield rate of nanocrystalline La(Oxin)3•3H2O is approximately 95.9 %. During the synthesis of La(Oxin)3•3H2O nanocrystallite, the types of factors influencing the final product under different solid-state reaction conditions such as reactant, changing the proportions of reactant, addition of inert substances, mixing of trace solvent or surfactant and time of porphyrizing was also observed.","PeriodicalId":354649,"journal":{"name":"2009 International Conference on Applied Superconductivity and Electromagnetic Devices","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126375702","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-10-30DOI: 10.1109/ASEMD.2009.5306683
Zelin Fu, Hui Guo
Ultrasonic motor is a novel actuator, which has been developing very fast since its appearance in 1970s. Many studies have been done, in both theoretic and practical fields. With design experience, review of linear ultrasonic motor drive mechanism and classification methods is outlined. The basic design means and general analysis ways are sum up. ANSYS FEM is a kind of analysis software. It affords much help for design and analysis of ultrasonic motor. The entire design process of LUSM and characteristic testing will be show up. For further study, a typical modeling method has been given.
{"title":"A study of linear ultrasonic motor","authors":"Zelin Fu, Hui Guo","doi":"10.1109/ASEMD.2009.5306683","DOIUrl":"https://doi.org/10.1109/ASEMD.2009.5306683","url":null,"abstract":"Ultrasonic motor is a novel actuator, which has been developing very fast since its appearance in 1970s. Many studies have been done, in both theoretic and practical fields. With design experience, review of linear ultrasonic motor drive mechanism and classification methods is outlined. The basic design means and general analysis ways are sum up. ANSYS FEM is a kind of analysis software. It affords much help for design and analysis of ultrasonic motor. The entire design process of LUSM and characteristic testing will be show up. For further study, a typical modeling method has been given.","PeriodicalId":354649,"journal":{"name":"2009 International Conference on Applied Superconductivity and Electromagnetic Devices","volume":"205 2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127033952","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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