Pub Date : 1998-11-24DOI: 10.1109/SMELEC.1998.781163
S. Thirumeni, P. Poopalan, A. A. Hassan, H. Ahmad
The far-field (FF) scanning technique and the Petermann II definition were used to measure the mode field diameter (MFD) of a step-index single-mode fiber (SMF). Studies were conducted to see how the choice of the maximum scan angle and the angle resolution value could affect the value of the measured MFD. A maximum scan angle of 12/spl deg/ and resolution angle of 0.5/spl deg/ is essential in order to obtain an accurate value for the MFD.
{"title":"Effects of scan angles in the far-field scanning method on the measurement of the mode field diameter","authors":"S. Thirumeni, P. Poopalan, A. A. Hassan, H. Ahmad","doi":"10.1109/SMELEC.1998.781163","DOIUrl":"https://doi.org/10.1109/SMELEC.1998.781163","url":null,"abstract":"The far-field (FF) scanning technique and the Petermann II definition were used to measure the mode field diameter (MFD) of a step-index single-mode fiber (SMF). Studies were conducted to see how the choice of the maximum scan angle and the angle resolution value could affect the value of the measured MFD. A maximum scan angle of 12/spl deg/ and resolution angle of 0.5/spl deg/ is essential in order to obtain an accurate value for the MFD.","PeriodicalId":356206,"journal":{"name":"ICSE'98. 1998 IEEE International Conference on Semiconductor Electronics. Proceedings (Cat. No.98EX187)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-11-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134375684","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-11-24DOI: 10.1109/SMELEC.1998.781153
T. Yeoh, Shze-Jer Hu
Process induced charging is not new in the wafer fabrication process. However, it is difficult to identify as test structures used cannot detect this problem effectively, as these structures are not connected to large metal or polysilicon networks for charge collection, or if these structures are covered by thick photoresist. Ion implantation is a major process where charging poses a problem to the extent of transistor gate oxide breakdown or degradation. This is presented along with the respective charging models for these phenomena. This breakdown is strongly influenced by device design layout, implanter energy and diffusion breakdown strengths.
{"title":"Wafer fabrication ion implant charging-impact on gate oxide breakdown","authors":"T. Yeoh, Shze-Jer Hu","doi":"10.1109/SMELEC.1998.781153","DOIUrl":"https://doi.org/10.1109/SMELEC.1998.781153","url":null,"abstract":"Process induced charging is not new in the wafer fabrication process. However, it is difficult to identify as test structures used cannot detect this problem effectively, as these structures are not connected to large metal or polysilicon networks for charge collection, or if these structures are covered by thick photoresist. Ion implantation is a major process where charging poses a problem to the extent of transistor gate oxide breakdown or degradation. This is presented along with the respective charging models for these phenomena. This breakdown is strongly influenced by device design layout, implanter energy and diffusion breakdown strengths.","PeriodicalId":356206,"journal":{"name":"ICSE'98. 1998 IEEE International Conference on Semiconductor Electronics. Proceedings (Cat. No.98EX187)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-11-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130103392","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-11-24DOI: 10.1109/SMELEC.1998.781170
I. Aris, L. N. Hulley, N. Mariun, R. Sahbudin
This paper presents the design and development of a pulse-width-modulated (PWM) power MOSFET-based audio amplifier. A natural sampled PWM switching strategy is implemented in the development of the amplifier to reduce its harmonic level and increase its efficiency. IRF510 power MOSFETs are used as the amplifier power switching devices. From the results obtained, it is found that the efficiency of the amplifier can be increased to more than 90%.
{"title":"Development of a pulse-width modulated power MOSFET-based audio amplifier","authors":"I. Aris, L. N. Hulley, N. Mariun, R. Sahbudin","doi":"10.1109/SMELEC.1998.781170","DOIUrl":"https://doi.org/10.1109/SMELEC.1998.781170","url":null,"abstract":"This paper presents the design and development of a pulse-width-modulated (PWM) power MOSFET-based audio amplifier. A natural sampled PWM switching strategy is implemented in the development of the amplifier to reduce its harmonic level and increase its efficiency. IRF510 power MOSFETs are used as the amplifier power switching devices. From the results obtained, it is found that the efficiency of the amplifier can be increased to more than 90%.","PeriodicalId":356206,"journal":{"name":"ICSE'98. 1998 IEEE International Conference on Semiconductor Electronics. Proceedings (Cat. No.98EX187)","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-11-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130159834","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-11-24DOI: 10.1109/SMELEC.1998.781177
U. Hashim, A. Shaari, I. Ahmad, S. Shaari, B. Y. Majlis
The statistical design of experiments technique was used to study the influence of junction formation process variables on the diffusion sheet resistance. A two-level screening experiment with 2/sup 3/ factorial design was used to evaluate three process variables in eight combination runs. The factors were BF/sub 2/ and Ar implantation dose, drive-in temperature and drive-in time. Variance analysis was used to analyze the data and we found that all of the main variables were important for arsenic implanted wafers but only the drive-in temperature factor was important for boron implanted wafers. We also discovered that there was no significant interaction between the factors. For arsenic implanted wafers, which were driven-in at 950/spl deg/C, the measured sheet resistances were at between 110 and 130 /spl Omega///spl square/ while for wafers which were driven-in at 850/spl deg/C, the sheet resistances were measured at between 60 and 90 /spl Omega///spl square/. For boron implanted wafers, the measured sheet resistance values were found to be constant at about 30 /spl Omega///spl square/, regardless of drive-in temperature. The experimental data were used in regression equations to model the sheet resistance. By this, we have illustrated how the statistical design of experiments methodology can be used effectively in order to control the process performance.
{"title":"The influence of junction formation process variables on diffusion sheet resistance using statistical design of experiment methodology","authors":"U. Hashim, A. Shaari, I. Ahmad, S. Shaari, B. Y. Majlis","doi":"10.1109/SMELEC.1998.781177","DOIUrl":"https://doi.org/10.1109/SMELEC.1998.781177","url":null,"abstract":"The statistical design of experiments technique was used to study the influence of junction formation process variables on the diffusion sheet resistance. A two-level screening experiment with 2/sup 3/ factorial design was used to evaluate three process variables in eight combination runs. The factors were BF/sub 2/ and Ar implantation dose, drive-in temperature and drive-in time. Variance analysis was used to analyze the data and we found that all of the main variables were important for arsenic implanted wafers but only the drive-in temperature factor was important for boron implanted wafers. We also discovered that there was no significant interaction between the factors. For arsenic implanted wafers, which were driven-in at 950/spl deg/C, the measured sheet resistances were at between 110 and 130 /spl Omega///spl square/ while for wafers which were driven-in at 850/spl deg/C, the sheet resistances were measured at between 60 and 90 /spl Omega///spl square/. For boron implanted wafers, the measured sheet resistance values were found to be constant at about 30 /spl Omega///spl square/, regardless of drive-in temperature. The experimental data were used in regression equations to model the sheet resistance. By this, we have illustrated how the statistical design of experiments methodology can be used effectively in order to control the process performance.","PeriodicalId":356206,"journal":{"name":"ICSE'98. 1998 IEEE International Conference on Semiconductor Electronics. Proceedings (Cat. No.98EX187)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-11-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121299729","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-11-24DOI: 10.1109/SMELEC.1998.781164
S. Selvakennedy, M. Mahdi, P. Poopalan, H. Ahmad
The erbium doped fibre amplifier (EDFA) has been extensively developed due to its compatibility with existing optical fibre systems, low insertion loss, low crosstalk, high gain, polarization insensitivity and low noise figure (NF). The preferable pumping wavelengths for EDFAs are 980 nm and 1480 nm, which creates a 3-level and 2-level system respectively. The advantages of 980 nm as a pumping wavelength compared to 1480 nm are full ion inversion, a lower noise figure and negligible excited state absorption (ESA). A model simulating the 3-level energy system of the Er-doped fibre amplifier (EDFA) in a co-propagating configuration for the 980 nm pump wavelength range is presented and discussed. The characteristics being considered for performance are gain, output signal power, excess pump power and noise figure. The theoretical model is developed to numerically solve the coupled differential equations of the pump and signal power evolution along the fibre. This numerical model uses the relaxation technique for convergence, whereas the differential equations are solved using the simple Euler method.
{"title":"Pump wavelength's influence in erbium-doped fibre amplifier performance","authors":"S. Selvakennedy, M. Mahdi, P. Poopalan, H. Ahmad","doi":"10.1109/SMELEC.1998.781164","DOIUrl":"https://doi.org/10.1109/SMELEC.1998.781164","url":null,"abstract":"The erbium doped fibre amplifier (EDFA) has been extensively developed due to its compatibility with existing optical fibre systems, low insertion loss, low crosstalk, high gain, polarization insensitivity and low noise figure (NF). The preferable pumping wavelengths for EDFAs are 980 nm and 1480 nm, which creates a 3-level and 2-level system respectively. The advantages of 980 nm as a pumping wavelength compared to 1480 nm are full ion inversion, a lower noise figure and negligible excited state absorption (ESA). A model simulating the 3-level energy system of the Er-doped fibre amplifier (EDFA) in a co-propagating configuration for the 980 nm pump wavelength range is presented and discussed. The characteristics being considered for performance are gain, output signal power, excess pump power and noise figure. The theoretical model is developed to numerically solve the coupled differential equations of the pump and signal power evolution along the fibre. This numerical model uses the relaxation technique for convergence, whereas the differential equations are solved using the simple Euler method.","PeriodicalId":356206,"journal":{"name":"ICSE'98. 1998 IEEE International Conference on Semiconductor Electronics. Proceedings (Cat. No.98EX187)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-11-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131600218","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-11-24DOI: 10.1109/SMELEC.1998.781180
J. Y. Asous, S. Shaari
A new design of a variable passive X-coupler optical waveguide device is proposed and its geometry and application are discussed. This device differs from other conventional 2/spl times/2 directional couplers and fixed X-couplers, as the device functionality is based on the principle that it is symmetrical, with variable parameters, and that the power in each excited mode can be directed unambiguously into one of the output channels by varying any of its parameters. The geometry and relative position between the input waveguide and the second waveguide of these symmetrical X-shaped channels determines the power splitting ratio. The device has excellent features compared to other passive optical couplers, due to the flexibility of the design parameters such as the off-set distance in the z-direction and the waveguide spacing in the y-direction.
{"title":"New design of variable X-coupler optical waveguide passive device","authors":"J. Y. Asous, S. Shaari","doi":"10.1109/SMELEC.1998.781180","DOIUrl":"https://doi.org/10.1109/SMELEC.1998.781180","url":null,"abstract":"A new design of a variable passive X-coupler optical waveguide device is proposed and its geometry and application are discussed. This device differs from other conventional 2/spl times/2 directional couplers and fixed X-couplers, as the device functionality is based on the principle that it is symmetrical, with variable parameters, and that the power in each excited mode can be directed unambiguously into one of the output channels by varying any of its parameters. The geometry and relative position between the input waveguide and the second waveguide of these symmetrical X-shaped channels determines the power splitting ratio. The device has excellent features compared to other passive optical couplers, due to the flexibility of the design parameters such as the off-set distance in the z-direction and the waveguide spacing in the y-direction.","PeriodicalId":356206,"journal":{"name":"ICSE'98. 1998 IEEE International Conference on Semiconductor Electronics. Proceedings (Cat. No.98EX187)","volume":"65 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-11-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114208276","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-11-24DOI: 10.1109/SMELEC.1998.781178
S. A. Halim, S. Koh, S. P. Chow, E. Saion, H. Mansor, W.Y.W. Daud
Electrical resistivity measurements of La/sub 0.67/Ca/sub 0.33/Mn/sub 1-x/Dy/sub x/O/sub 3/, x=0 to 0.12, ceramics have been studied using a standard four point probe technique, while the magnetic behaviour has been studied using AC susceptibility techniques. The transport properties show the transition from semiconducting to metallic conductivity at T/sub p/ and paramagnetic-ferromagnetic transitions, T/sub c/, were observed in the /spl chi/-temperature curves for all samples. The existence of metallic conductivity, T/sub p/, and ferromagnetism, T/sub c/, were found to be linearly correlated. This phenomenon of coexistence is due to the double exchange interaction of two electrons in Mn/sup 3+/-O/sup 2-/-Mn/sup 4+/ and Mn/sup 4+/-O/sup 2-/-Mn/sup 3+/ configuration which brings the system below T/sub c/ into a metallic state. Hence, it is observed that the Curie temperature T/sub c/ is closely related to the sharp decrease in electrical resistivity of the samples. However, both transition temperatures shift to lower temperatures as dysprosium doping increases, indicating the loss of ferromagnetic order and transport properties. As for the transport properties, the semiconductor model ln(/spl sigma/)/spl sim/(E/sub g//2kT) was used to explain the conduction mechanism of perovskite manganites above T/sub p/. It was concluded that the total conductivity /spl sigma//sub tot/ consists of the intrinsic and extrinsic components such that /spl sigma//sub tot/=/spl sigma//sub int/+/spl sigma//sub ext/. The energy gap decreases initially from 0.11 eV to a minimum value of 0.06 eV at x=0.03 and increases again to 0.08 eV at the composition of x=0.12 for the extrinsic region.
{"title":"Semiconducting and magnetic properties of La/sub 0.67/Ca/sub 0.33/Mn/sub 1-x/Dy/sub x/O/sub 3/ ceramics","authors":"S. A. Halim, S. Koh, S. P. Chow, E. Saion, H. Mansor, W.Y.W. Daud","doi":"10.1109/SMELEC.1998.781178","DOIUrl":"https://doi.org/10.1109/SMELEC.1998.781178","url":null,"abstract":"Electrical resistivity measurements of La/sub 0.67/Ca/sub 0.33/Mn/sub 1-x/Dy/sub x/O/sub 3/, x=0 to 0.12, ceramics have been studied using a standard four point probe technique, while the magnetic behaviour has been studied using AC susceptibility techniques. The transport properties show the transition from semiconducting to metallic conductivity at T/sub p/ and paramagnetic-ferromagnetic transitions, T/sub c/, were observed in the /spl chi/-temperature curves for all samples. The existence of metallic conductivity, T/sub p/, and ferromagnetism, T/sub c/, were found to be linearly correlated. This phenomenon of coexistence is due to the double exchange interaction of two electrons in Mn/sup 3+/-O/sup 2-/-Mn/sup 4+/ and Mn/sup 4+/-O/sup 2-/-Mn/sup 3+/ configuration which brings the system below T/sub c/ into a metallic state. Hence, it is observed that the Curie temperature T/sub c/ is closely related to the sharp decrease in electrical resistivity of the samples. However, both transition temperatures shift to lower temperatures as dysprosium doping increases, indicating the loss of ferromagnetic order and transport properties. As for the transport properties, the semiconductor model ln(/spl sigma/)/spl sim/(E/sub g//2kT) was used to explain the conduction mechanism of perovskite manganites above T/sub p/. It was concluded that the total conductivity /spl sigma//sub tot/ consists of the intrinsic and extrinsic components such that /spl sigma//sub tot/=/spl sigma//sub int/+/spl sigma//sub ext/. The energy gap decreases initially from 0.11 eV to a minimum value of 0.06 eV at x=0.03 and increases again to 0.08 eV at the composition of x=0.12 for the extrinsic region.","PeriodicalId":356206,"journal":{"name":"ICSE'98. 1998 IEEE International Conference on Semiconductor Electronics. Proceedings (Cat. No.98EX187)","volume":"164 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-11-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123181652","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-11-24DOI: 10.1109/SMELEC.1998.781162
V. Sinivasagam, M. K. Abdullah, F. Isnin, H. Ahmad
An erbium doped fiber laser (EDFL) system could provide a good output signal with a wide tuning range. Nevertheless, any increment in its output signal power is at the expense of efficiency and power fluctuation. This comparative study shows that an erbium/ytterbium doped fiber laser (EYDFL) system gives higher efficiency with reduced power fluctuation while maintaining the tuning range of the former system. The efficiency of the EYDFL system easily exceeds 300% higher and the power fluctuation was reduced by up to 43.8% as compared to the EDFL system.
{"title":"EYDFL giving higher efficiency and smaller power fluctuation as compared to EDFL","authors":"V. Sinivasagam, M. K. Abdullah, F. Isnin, H. Ahmad","doi":"10.1109/SMELEC.1998.781162","DOIUrl":"https://doi.org/10.1109/SMELEC.1998.781162","url":null,"abstract":"An erbium doped fiber laser (EDFL) system could provide a good output signal with a wide tuning range. Nevertheless, any increment in its output signal power is at the expense of efficiency and power fluctuation. This comparative study shows that an erbium/ytterbium doped fiber laser (EYDFL) system gives higher efficiency with reduced power fluctuation while maintaining the tuning range of the former system. The efficiency of the EYDFL system easily exceeds 300% higher and the power fluctuation was reduced by up to 43.8% as compared to the EDFL system.","PeriodicalId":356206,"journal":{"name":"ICSE'98. 1998 IEEE International Conference on Semiconductor Electronics. Proceedings (Cat. No.98EX187)","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-11-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125033298","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-11-24DOI: 10.1109/SMELEC.1998.781171
I. Aris, L. N. Hulley, N. Mariun, R. Sahbudin
This paper presents a proposed new structure of the power MOSFET model and its implementation in the HSPICE and PECT II (Power Electronics and Control Tool) packages. A fast and accurate technique for determining power MOSFET model parameters which introduces a curve-fitting optimisation technique is discussed in detail. The optimisation process generates automatically a set of device parameters based on the input specification, measured data and manufacturer's data sheets. The input procedure involves a netlist specifying parameter tolerances, component voltage and current limits and an initial guess to the selected parameter. Using curve fitting and iterative methods, the "correct" model is generated for utilisation in the simulation phase of both the HSPICE and PECT II packages. This method is then compared to that of a normal method which uses specific formulae to obtain power MOSFET model parameters. The results show that the curve-fitting optimisation technique produces more accurate power MOSFET model parameters than the other method. Both simulation and experimental results of the power MOSFET characteristics are also included in the discussion.
{"title":"Using curve-fitting optimisation technique to estimate power MOSFET model parameters for PECT II system","authors":"I. Aris, L. N. Hulley, N. Mariun, R. Sahbudin","doi":"10.1109/SMELEC.1998.781171","DOIUrl":"https://doi.org/10.1109/SMELEC.1998.781171","url":null,"abstract":"This paper presents a proposed new structure of the power MOSFET model and its implementation in the HSPICE and PECT II (Power Electronics and Control Tool) packages. A fast and accurate technique for determining power MOSFET model parameters which introduces a curve-fitting optimisation technique is discussed in detail. The optimisation process generates automatically a set of device parameters based on the input specification, measured data and manufacturer's data sheets. The input procedure involves a netlist specifying parameter tolerances, component voltage and current limits and an initial guess to the selected parameter. Using curve fitting and iterative methods, the \"correct\" model is generated for utilisation in the simulation phase of both the HSPICE and PECT II packages. This method is then compared to that of a normal method which uses specific formulae to obtain power MOSFET model parameters. The results show that the curve-fitting optimisation technique produces more accurate power MOSFET model parameters than the other method. Both simulation and experimental results of the power MOSFET characteristics are also included in the discussion.","PeriodicalId":356206,"journal":{"name":"ICSE'98. 1998 IEEE International Conference on Semiconductor Electronics. Proceedings (Cat. No.98EX187)","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-11-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130264509","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-11-24DOI: 10.1109/SMELEC.1998.781149
V. Ahmadi, M. Sheikhi
Several functions such as optical amplification, switching, and bistability can be obtained by monolithic integration of optoelectronic devices. A physical model for the operation of an optoelectronic integrated device (OEID) composed of a heterojunction phototransistor (HPT) monolithically integrated over a quantum well laser diode (QW-LD) is developed to investigate quantitatively the dynamic response of the QW-OEID. We have considered the internal optical feedback and its effect on the frequency response of the device. Furthermore, a physical model is developed to include the effect of lateral diffusion of carriers inside the device. The results of the numerical analysis for the dynamic response and its dependency on these parameters are presented. It is shown that the quantum well structure leads to enhancement of the optical frequency response of the OEID. The relaxation oscillation time and the overshoot in the optical step and pulse response are reduced.
{"title":"Numerical analysis for the characteristics of a QW-structure optoelectronic integrated device","authors":"V. Ahmadi, M. Sheikhi","doi":"10.1109/SMELEC.1998.781149","DOIUrl":"https://doi.org/10.1109/SMELEC.1998.781149","url":null,"abstract":"Several functions such as optical amplification, switching, and bistability can be obtained by monolithic integration of optoelectronic devices. A physical model for the operation of an optoelectronic integrated device (OEID) composed of a heterojunction phototransistor (HPT) monolithically integrated over a quantum well laser diode (QW-LD) is developed to investigate quantitatively the dynamic response of the QW-OEID. We have considered the internal optical feedback and its effect on the frequency response of the device. Furthermore, a physical model is developed to include the effect of lateral diffusion of carriers inside the device. The results of the numerical analysis for the dynamic response and its dependency on these parameters are presented. It is shown that the quantum well structure leads to enhancement of the optical frequency response of the OEID. The relaxation oscillation time and the overshoot in the optical step and pulse response are reduced.","PeriodicalId":356206,"journal":{"name":"ICSE'98. 1998 IEEE International Conference on Semiconductor Electronics. Proceedings (Cat. No.98EX187)","volume":"57 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-11-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130370931","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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