Pub Date : 2014-11-24DOI: 10.1109/GROUP4.2014.6961935
H. Nishi, Jae-Young Kim, H. Fukuda, Ho-Jin Song, T. Tsuchizawa, K. Yamada
A silicon photonic circuit for continuous-wave terahertz vector spectroscopy greatly reduces the physical size of the system and phase instability. Using off-chip uni-traveling-carrier photodiodes, we demonstrate fast and highly stable spectrometer.
{"title":"Si photonic integrated circuit for a compact and stable CW-THz spectrometer","authors":"H. Nishi, Jae-Young Kim, H. Fukuda, Ho-Jin Song, T. Tsuchizawa, K. Yamada","doi":"10.1109/GROUP4.2014.6961935","DOIUrl":"https://doi.org/10.1109/GROUP4.2014.6961935","url":null,"abstract":"A silicon photonic circuit for continuous-wave terahertz vector spectroscopy greatly reduces the physical size of the system and phase instability. Using off-chip uni-traveling-carrier photodiodes, we demonstrate fast and highly stable spectrometer.","PeriodicalId":364162,"journal":{"name":"11th International Conference on Group IV Photonics (GFP)","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-11-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126769015","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-11-24DOI: 10.1109/GROUP4.2014.6962002
J. Muller, F. Merget, S. S. Azadeh, J. Hauck, S. R. Garcia, J. Witzens
A small signal analytical expression of peaking in the electro-optic response of ring modulators is derived and shown to closely match experimental results. E/O bandwidths above 40 GHz are obtained. The peaking is also used to open eye diagrams penalized by intersymbol interference with results reported at 32, 40 and 44 Gbps.
{"title":"Peaking in ring modulators and application to ISI reduction","authors":"J. Muller, F. Merget, S. S. Azadeh, J. Hauck, S. R. Garcia, J. Witzens","doi":"10.1109/GROUP4.2014.6962002","DOIUrl":"https://doi.org/10.1109/GROUP4.2014.6962002","url":null,"abstract":"A small signal analytical expression of peaking in the electro-optic response of ring modulators is derived and shown to closely match experimental results. E/O bandwidths above 40 GHz are obtained. The peaking is also used to open eye diagrams penalized by intersymbol interference with results reported at 32, 40 and 44 Gbps.","PeriodicalId":364162,"journal":{"name":"11th International Conference on Group IV Photonics (GFP)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-11-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134188009","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-11-24DOI: 10.1109/GROUP4.2014.6961952
H. Isshiki, K. Komiya, Kohei Kojima, Y. Souma, Tetsuya Shigeeda
Sharp and intense emission from the Si-V luminescent center in diamond grown on Si is observed. Possibility of the Si-V luminescence center as a light source for integrated quantum photonics on Si chip is suggested.
{"title":"Sharp and intense emission of Si-vacancy luminescent center in diamond film grown on Si (100) substrate","authors":"H. Isshiki, K. Komiya, Kohei Kojima, Y. Souma, Tetsuya Shigeeda","doi":"10.1109/GROUP4.2014.6961952","DOIUrl":"https://doi.org/10.1109/GROUP4.2014.6961952","url":null,"abstract":"Sharp and intense emission from the Si-V luminescent center in diamond grown on Si is observed. Possibility of the Si-V luminescence center as a light source for integrated quantum photonics on Si chip is suggested.","PeriodicalId":364162,"journal":{"name":"11th International Conference on Group IV Photonics (GFP)","volume":"54 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-11-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132984041","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-11-24DOI: 10.1109/GROUP4.2014.6962020
J. Frigerio, F. Isa, E. Ghisetti, G. Isella, L. Miglio
We present an infrared photodetector obtained by depositing Ge on patterned silicon substrates. The patterning prevents thermal cracks formation allowing for the deposition of several micrometer thick Ge layers, exhibiting strong absorption at the indirect gap (λ=1.88 μm).
{"title":"Infrared photodetectors fabricated on 3D epitaxial Ge-on-Si","authors":"J. Frigerio, F. Isa, E. Ghisetti, G. Isella, L. Miglio","doi":"10.1109/GROUP4.2014.6962020","DOIUrl":"https://doi.org/10.1109/GROUP4.2014.6962020","url":null,"abstract":"We present an infrared photodetector obtained by depositing Ge on patterned silicon substrates. The patterning prevents thermal cracks formation allowing for the deposition of several micrometer thick Ge layers, exhibiting strong absorption at the indirect gap (λ=1.88 μm).","PeriodicalId":364162,"journal":{"name":"11th International Conference on Group IV Photonics (GFP)","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-11-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122358131","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-11-24DOI: 10.1109/GROUP4.2014.6961944
X. Hu, R. Orobtchouk, S. Cueff, P. Rojo Romeo, P. Regreny, R. Bachelet, L. Mazet, L. Louahadj, R. Moalla, C. Dubourdieu, B. Vilquin, G. Saint Girons, P. Castéra, N. Sanchez, T. Angelova, A. Griol, A. Gutiérrez, P. Sanchis
We present design and fabrication of a slot waveguide BaTiO3/Si Mach-Zehnder modulator. Modelling results based on anisotropic finite-difference mode solver show variation of effective index of 1.57×10-3 and a Vπ·L of 0.98 V·cm.
{"title":"Slot waveguide electro-optic modulator with ferroelectric oxide BaTiO3 on silicon","authors":"X. Hu, R. Orobtchouk, S. Cueff, P. Rojo Romeo, P. Regreny, R. Bachelet, L. Mazet, L. Louahadj, R. Moalla, C. Dubourdieu, B. Vilquin, G. Saint Girons, P. Castéra, N. Sanchez, T. Angelova, A. Griol, A. Gutiérrez, P. Sanchis","doi":"10.1109/GROUP4.2014.6961944","DOIUrl":"https://doi.org/10.1109/GROUP4.2014.6961944","url":null,"abstract":"We present design and fabrication of a slot waveguide BaTiO<sub>3</sub>/Si Mach-Zehnder modulator. Modelling results based on anisotropic finite-difference mode solver show variation of effective index of 1.57×10<sup>-3</sup> and a Vπ·L of 0.98 V·cm.","PeriodicalId":364162,"journal":{"name":"11th International Conference on Group IV Photonics (GFP)","volume":"91 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-11-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116664207","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-11-24DOI: 10.1109/GROUP4.2014.6961992
R. Cao, H. Hu, J. Ferguson, F. Pikus, J. Cayo, A. Arriordaz, E. Cassan, W. Bogaerts, I. O’Connor
This work demonstrates the use of commercial EDA toolsets for the measurement and validation of the layout of waveguide interconnects and the integration into a dedicated silicon photonics physical design flow.
{"title":"Photonics design with an EDA approach: Validation of layout waveguide interconnects","authors":"R. Cao, H. Hu, J. Ferguson, F. Pikus, J. Cayo, A. Arriordaz, E. Cassan, W. Bogaerts, I. O’Connor","doi":"10.1109/GROUP4.2014.6961992","DOIUrl":"https://doi.org/10.1109/GROUP4.2014.6961992","url":null,"abstract":"This work demonstrates the use of commercial EDA toolsets for the measurement and validation of the layout of waveguide interconnects and the integration into a dedicated silicon photonics physical design flow.","PeriodicalId":364162,"journal":{"name":"11th International Conference on Group IV Photonics (GFP)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-11-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130690022","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-11-24DOI: 10.1109/GROUP4.2014.6962004
S. Wirths, D. Stange, R. Geiger, Z. Ikonić, T. Stoica, G. Mussler, J. Hartmann, H. Sigg, D. Grutzmacher, S. Mantl, D. Buca
The growth and characterization, including band structure and gain calculations, of strain engineered (Si)GeSn/GeSn heterostructures with large Sn content are presented and discussed in the view of the realization of a direct band gap semiconductor.
{"title":"Strain engineering for direct bandgap GeSn alloys","authors":"S. Wirths, D. Stange, R. Geiger, Z. Ikonić, T. Stoica, G. Mussler, J. Hartmann, H. Sigg, D. Grutzmacher, S. Mantl, D. Buca","doi":"10.1109/GROUP4.2014.6962004","DOIUrl":"https://doi.org/10.1109/GROUP4.2014.6962004","url":null,"abstract":"The growth and characterization, including band structure and gain calculations, of strain engineered (Si)GeSn/GeSn heterostructures with large Sn content are presented and discussed in the view of the realization of a direct band gap semiconductor.","PeriodicalId":364162,"journal":{"name":"11th International Conference on Group IV Photonics (GFP)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-11-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125379227","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-11-24DOI: 10.1109/GROUP4.2014.6962021
Nicolás Abadía, S. Olivier, D. Marris-Morini, L. Vivien, T. Bernadin, J. Weeber
We present a design of an optimized CMOS-compatible germanium-on-silicon Franz-Keldysh effect plasmonic modulator. Its length is below 30 μm and the modulator operates at -3V. It features a power consumption as low as 20 fJ/bit.
{"title":"A CMOS-compatible Franz-Keldysh effect plasmonic modulator","authors":"Nicolás Abadía, S. Olivier, D. Marris-Morini, L. Vivien, T. Bernadin, J. Weeber","doi":"10.1109/GROUP4.2014.6962021","DOIUrl":"https://doi.org/10.1109/GROUP4.2014.6962021","url":null,"abstract":"We present a design of an optimized CMOS-compatible germanium-on-silicon Franz-Keldysh effect plasmonic modulator. Its length is below 30 μm and the modulator operates at -3V. It features a power consumption as low as 20 fJ/bit.","PeriodicalId":364162,"journal":{"name":"11th International Conference on Group IV Photonics (GFP)","volume":"48 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-11-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123919596","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-11-24DOI: 10.1109/GROUP4.2014.6961947
L. Zimmermann, D. Knoll, S. Lischke, D. Petousi, M. Kroh, G. Winzer, B. Heinemann, P. Ostrovskyy, D. Micusík, M. Lisker, O. Fursenko, S. Marschmeyer, Y. Yamamoto, K. Voigt, B. Wohlfeil, B. Tillack, K. Petermann
We review the development status of device integration in photonic BiCMOS technology. Basic photonic device performance and results of a first fully-integrated technology learning cycle shall be presented.
{"title":"Monolithic integration of photonic devices in SiGe BiCMOS","authors":"L. Zimmermann, D. Knoll, S. Lischke, D. Petousi, M. Kroh, G. Winzer, B. Heinemann, P. Ostrovskyy, D. Micusík, M. Lisker, O. Fursenko, S. Marschmeyer, Y. Yamamoto, K. Voigt, B. Wohlfeil, B. Tillack, K. Petermann","doi":"10.1109/GROUP4.2014.6961947","DOIUrl":"https://doi.org/10.1109/GROUP4.2014.6961947","url":null,"abstract":"We review the development status of device integration in photonic BiCMOS technology. Basic photonic device performance and results of a first fully-integrated technology learning cycle shall be presented.","PeriodicalId":364162,"journal":{"name":"11th International Conference on Group IV Photonics (GFP)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-11-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124477769","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-11-24DOI: 10.1109/GROUP4.2014.6962056
S. S. El Nasr-Storey, F. Boeuf, C. Baudot, S. Détraz, J. Fédéli, D. Marris-Morini, L. Olantera, G. Pezzullo, C. Sigaud, C. Soós, J. Troska, F. Vasey, L. Vivien, M. Zeiler, M. Ziebell
Tens of thousands of optical data transmission links are currently installed in all four experiments at the Large Hadron Collider (LHC) [1] for the transmission of timing, control and read-out data to and from the detector systems. Work has started on identifying new technologies and optical components which could meet the requirements of the High-Luminosity LHC (HL-LHC); an upgrade of approximately of an order of magnitude to the luminosity of the LHC planned to take place in 10 years time. Silicon photonics is one of the newly available technologies being investigated for future data transmission applications at the HL-LHC. A silicon photonics circuit, with components that can resist the harsh radiation environments of the HL-LHC [2], could be of interest to HL-LHC applications because of its potentially small size, high speed, and low power consumption. Radiation tolerant components for HL-LHC applications must withstand radiation levels several orders of magnitude higher, both in terms of non-ionizing and ionizing radiation, than other environments (e.g. space) where radiation is a concern.
{"title":"Silicon photonics for high energy physics data transmission applications","authors":"S. S. El Nasr-Storey, F. Boeuf, C. Baudot, S. Détraz, J. Fédéli, D. Marris-Morini, L. Olantera, G. Pezzullo, C. Sigaud, C. Soós, J. Troska, F. Vasey, L. Vivien, M. Zeiler, M. Ziebell","doi":"10.1109/GROUP4.2014.6962056","DOIUrl":"https://doi.org/10.1109/GROUP4.2014.6962056","url":null,"abstract":"Tens of thousands of optical data transmission links are currently installed in all four experiments at the Large Hadron Collider (LHC) [1] for the transmission of timing, control and read-out data to and from the detector systems. Work has started on identifying new technologies and optical components which could meet the requirements of the High-Luminosity LHC (HL-LHC); an upgrade of approximately of an order of magnitude to the luminosity of the LHC planned to take place in 10 years time. Silicon photonics is one of the newly available technologies being investigated for future data transmission applications at the HL-LHC. A silicon photonics circuit, with components that can resist the harsh radiation environments of the HL-LHC [2], could be of interest to HL-LHC applications because of its potentially small size, high speed, and low power consumption. Radiation tolerant components for HL-LHC applications must withstand radiation levels several orders of magnitude higher, both in terms of non-ionizing and ionizing radiation, than other environments (e.g. space) where radiation is a concern.","PeriodicalId":364162,"journal":{"name":"11th International Conference on Group IV Photonics (GFP)","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-11-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115872247","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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