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11th International Conference on Group IV Photonics (GFP)最新文献

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Wavelength locking of a silicon microring resonator assisted by ContactLess Integrated Photonic Probe 非接触式集成光子探针辅助下硅微环谐振腔的波长锁定
Pub Date : 2014-11-24 DOI: 10.1109/GROUP4.2014.6961958
S. Grillanda, M. Carminati, F. Morichetti, A. Annoni, P. Ciccarella, G. Ferrari, M. Sampietro, A. Melloni
We demonstrate feedback-control of a thermally actuated silicon microring resonator integrating a transparent light monitor. The microring resonance is locked to the wavelength of an external laser with 150 ms time response.
我们演示了集成透明光监视器的热驱动硅微环谐振器的反馈控制。微环共振被锁定在具有150ms时间响应的外部激光的波长上。
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引用次数: 2
Experimental demonstration of TM lateral leakage in a standard SOI photonics platform TM侧向泄漏在标准SOI光子学平台上的实验演示
Pub Date : 2014-11-24 DOI: 10.1109/GROUP4.2014.6962028
A. Hope, T. Nguyen, W. Bogaerts, A. Mitchell
We provide an experimental demonstration of the width dependent losses of the fundamental TM guided mode in fabricated silicon-on-insulator shallow etched ridge waveguides.
我们提供了一个实验证明了在制造的绝缘体上硅浅蚀刻脊波导中基本TM波导模式的宽度依赖损耗。
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引用次数: 2
Si waveguide wavelength filters with synthesized wavelength response designed for fiber to the home system 为光纤到家系统设计的具有合成波长响应的硅波导波长滤波器
Pub Date : 2014-11-24 DOI: 10.1109/GROUP4.2014.6961979
H. Okayama, Y. Onawa, D. Shimura, S. Miyamura, H. Takahashi, H. Yaegashi, H. Sasaki
We report wavelength filter for fiber to the home system using multiple interferometers to synthesize the desired wavelength response. Each device is designed to be polarization independent. The MMI and Mach-Zehnder type devices were tested.
我们报告了光纤到家庭系统的波长滤波器,使用多个干涉仪来合成所需的波长响应。每个装置都设计成与极化无关。对MMI和Mach-Zehnder型装置进行了测试。
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引用次数: 1
Fabrication tolerant silicon MZI filter 制造公差硅MZI滤波器
Pub Date : 2014-11-24 DOI: 10.1109/GROUP4.2014.6961969
S. Dwivedi, H. D’heer, W. Bogaerts
A compact fabrication tolerant MZI filter is demonstrated. The measured device shows a 20-fold improved tolerance to systematic waveguide linewidth variations, with a wavelength shift of less than 60 pm/nm linewidth change.
介绍了一种结构紧凑的容差MZI滤波器。所测器件对系统波导线宽变化的容忍度提高了20倍,波长位移小于60 pm/nm线宽变化。
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引用次数: 3
Infrared spectral response of a GeSn p-i-n photodiode on Si 硅基GeSn p-i-n光电二极管的红外光谱响应
Pub Date : 2014-11-24 DOI: 10.1109/GROUP4.2014.6962006
B. Conley, Yiyin Zhou, A. Mosleh, S. Ghetmiri, W. Du, R. Soref, G. Sun, J. Margetis, J. Tolle, H. Naseem, Shui-Qing Yu
The Ge/Ge0.94Sn0.06/Ge double heterostructure, grown on a Si substrate was fabricated into a p-i-n photodiode. The dark I-V characteristics and 1.4-2.2 μm spectral response were measured for comparison with other on Si infrared detectors.
在Si衬底上生长的Ge/Ge0.94Sn0.06/Ge双异质结构制备了p-i-n光电二极管。测量了该探测器的暗I-V特性和1.4 ~ 2.2 μm光谱响应,并与其他单Si红外探测器进行了比较。
{"title":"Infrared spectral response of a GeSn p-i-n photodiode on Si","authors":"B. Conley, Yiyin Zhou, A. Mosleh, S. Ghetmiri, W. Du, R. Soref, G. Sun, J. Margetis, J. Tolle, H. Naseem, Shui-Qing Yu","doi":"10.1109/GROUP4.2014.6962006","DOIUrl":"https://doi.org/10.1109/GROUP4.2014.6962006","url":null,"abstract":"The Ge/Ge<sub>0.94</sub>Sn<sub>0.06</sub>/Ge double heterostructure, grown on a Si substrate was fabricated into a p-i-n photodiode. The dark I-V characteristics and 1.4-2.2 μm spectral response were measured for comparison with other on Si infrared detectors.","PeriodicalId":364162,"journal":{"name":"11th International Conference on Group IV Photonics (GFP)","volume":"84 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-11-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124978959","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Toward experimental realization of hybrid waveguide-integrated plasmonic crystals on silicon-on-insulator platform 在绝缘体上硅平台上混合波导集成等离子体晶体的实验实现
Pub Date : 2014-11-24 DOI: 10.1109/GROUP4.2014.6961972
G. Ren, T. Nguyen, P. M. Davies, J. Hamm, O. Hess, A. Mitchell
Waveguide-integrated plasmonic crystals are fabricated and characterized using a hybrid platform where silver nanogap tilings are embedded in a layer of SiO2 on the surface of a SOI chip. Preliminary results of the second Bragg transmission spectra and asymmetric forward and backward transmission effect are presented.
利用混合平台制备了波导集成等离子体晶体,并对其进行了表征,在混合平台上,银纳米间隙砖嵌入在SOI芯片表面的SiO2层中。给出了二次布拉格传输光谱和非对称正向和反向传输效应的初步结果。
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引用次数: 0
Silicon photonic accurate wavelength detection using an AWG and time-domain multiplexing 硅光子精确波长检测使用AWG和时域复用
Pub Date : 2014-11-24 DOI: 10.1109/GROUP4.2014.6961931
A. Ruocco, D. van Thourhout, W. Bogaerts
We present a silicon-on-insulator (SOI) compact wavelength detector. An AWG in Vernier configuration is used as wavelength selective device and thermo-optic MZ modulators perform time-domain multiplexing on the inputs. The measured average accuracy is 180 pm.
我们提出了一种绝缘体上硅(SOI)紧凑型波长探测器。采用游标配置的AWG作为波长选择器件,热光MZ调制器在输入端执行时域多路复用。测量的平均精度为180 pm。
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引用次数: 0
Pockels effect study in strained silicon Mach-Zenhder interferometer 应变硅Mach-Zenhder干涉仪中的Pockels效应研究
Pub Date : 2014-11-24 DOI: 10.1109/GROUP4.2014.6961945
P. Damas, X. Le roux, D. Le Bourdais, E. Cassan, D. Marris-Morini, N. Izard, F. Maillard, T. Maroutian, P. Lecoeur, L. Vivien
We report the study of the wavelength dependence in the NIR range (1.3 μm-1.63 μm), of the Pockels effect in strained silicon. The measured second order nonlinear optical susceptibilities varied from Xxxy(2) = 74 ± 25 pm/V to Xxxy(2) = 221 ±34 pm/V, at λ = 1300 nm and λ = 1630 nm respectively.
本文报道了应变硅中Pockels效应在近红外波段(1.3 μm-1.63 μm)的波长依赖关系。在λ = 1300 nm和λ = 1630 nm处,测量到的二阶非线性光学磁化率分别为Xxxy(2) = 74±25 pm/V和Xxxy(2) = 221±34 pm/V。
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引用次数: 2
Measuring the angular emission of optical vortex beams from integrated devices 测量集成器件中光学涡旋光束的角发射
Pub Date : 2014-11-24 DOI: 10.1109/GROUP4.2014.6961985
Lifeng Chen, Jiangbo Zhu, M. Strain, L. Meriggi, M. L. García, K. Cicek, Huanlu Li, Xinlun Cai, M. Sorel, Siyuan Yu
Orbital angular momentum (OAM) represents an additional degree of freedom of a light beam, to be added to the standard ones (e.g. polarization, wavelength) [1-2]. Previously, we have demonstrated an integrated device for OAM generation, in which the Whispering Gallery mode (WGM) of the micro-ring resonator to a propagating OAM mode by using an angular grating embedded within the resonator structure [3]. This integrated approach allows compact device footprint and OAM mode order selectivity with injection wavelength, which is highly desirable for telecommunications systems. To bring OAM closer to actual system implementations, several groups around the world are working on the development of optical fibres for propagation of multiplexed OAM modes. In order to achieve efficient coupling between OAM beams and OAM fibres, it is important to obtain the information of the divergence angle of the OAM beams which should be compatible with the N.A. of the fibres. In this work, we use Fourier image inspection [4] of the emission of the device to analyse the divergence angles of the OAM beams, as shown in Fig.1.
轨道角动量(OAM)表示光束的额外自由度,可以添加到标准自由度(例如偏振,波长)中[1-2]。之前,我们已经展示了一种用于OAM生成的集成设备,其中微环谐振器的低语廊模式(WGM)通过嵌入谐振器结构中的角光栅转变为传播OAM模式[3]。这种集成方法允许紧凑的设备占用空间和具有注入波长的OAM模式顺序选择性,这对于电信系统是非常理想的。为了使OAM更接近实际的系统实现,世界各地的几个小组正在致力于开发用于多路OAM模式传播的光纤。为了实现OAM波束与OAM光纤之间的有效耦合,获得与光纤na相适应的OAM波束发散角信息是非常重要的。在这项工作中,我们使用器件发射的傅里叶图像检测[4]来分析OAM光束的发散角,如图1所示。
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引用次数: 1
Differential Si ring-resonator biosensors robust to process variations 差分硅环谐振器生物传感器对工艺变化的鲁棒性
Pub Date : 2014-11-24 DOI: 10.1109/GROUP4.2014.6961930
Tomoya Taniguchi, Y. Amemiya, Takeshi Ikeda, A. Kuroda, S. Yokoyama
Differential Si ring optical resonator sensors have been fabricated. Detection sensitivity was 10-2% for sucrose solution. This corresponds to 1.05×10-9 g/ml for prostate specific antigen and is almost in the level of practical use.
差分硅环光学谐振器传感器已被制成。蔗糖溶液的检测灵敏度为10-2%。这相当于1.05×10-9 g/ml的前列腺特异性抗原,几乎在实际使用的水平。
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引用次数: 0
期刊
11th International Conference on Group IV Photonics (GFP)
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