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GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996最新文献

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A self-aligned buried-channel heterostructure GaAs FET with high breakdown voltage for use in mobile communications systems 一种用于移动通信系统的具有高击穿电压的自对准埋道异质结构GaAs场效应管
Y. Kitaura, K. Nishihori, Y. Tanabe, M. Mihara, M. Yoshimura, T. Nitta, Y. Kakiuchi, N. Uchitomi
The combined process of epitaxy and ion implantation has been developed in the fabrication of a buried-channel WNx/W self-aligned heterostructure GaAs FET. This FET comprises an ion implanted channel and an undoped AlGaAs epitaxial surface layer. The ion-implantation technique leads to an IC-oriented process and the epitaxial technique to a buried channel structure. Both ease of isolation and enhanced breakdown voltage were attained, promising MMICs for L-band digital mobile communication systems.
采用外延和离子注入相结合的方法制备了埋沟道WNx/W自对准异质结构GaAs场效应管。该场效应管包括离子注入通道和未掺杂的AlGaAs外延表面层。离子注入技术导致了ic取向工艺,外延技术导致了埋藏沟道结构。实现了易于隔离和提高击穿电压,有望用于l波段数字移动通信系统的mmic。
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引用次数: 1
Low current dissipation pseudomorphic MODFET MMIC power amplifier for PHS operating with a 3.5 V single voltage supply 用于小灵通的低电流损耗伪晶MODFET MMIC功率放大器,工作电压为3.5 V
T. Yokoyama, T. Kunihisa, M. Nishijima, S. Yamamoto, M. Nishitsuji, K. Nishii, M. Nakayama, O. Ishikawa
A low current dissipation MMIC power amplifier operating with a 3.5 V single voltage supply has been developed for PHS. This MMIC utilizes a pseudomorphic double heterojunction modulation doped FET (P-MODFET) to realize single voltage operation and low operating current simultaneously. It exhibits very low operating current of 141 mA at the output power of 21.5 dBm with low adjacent channel leakage power of -56.1 dBc in the single voltage supply condition. This operating current is one of the lowest values that have been reported on the single voltage operation MMIC power amplifiers for PHS.
研制了一种用于小灵通的3.5 V单电压低功耗MMIC功率放大器。该MMIC利用伪晶双异质结调制掺杂场效应管(P-MODFET)实现单电压工作和低工作电流同时实现。在单电压供电条件下,输出功率为21.5 dBm,工作电流为141 mA,相邻通道漏功率为-56.1 dBc。该工作电流是已报道的用于小灵通的单电压操作MMIC功率放大器的最低值之一。
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引用次数: 18
A new low-noise, low-distortion and low-power-consumption variable gain amplifier for digital cellular phones 一种新型的低噪声、低失真、低功耗的数字手机可变增益放大器
K. Motoyoshi, T. Tambo, K. Tara, M. Hagio
This paper reports a new variable gain amplifier which has low NF of 1.7 dB, low distortion of IM/sub 3//spl les/50 dBc and low power consumption of less than 30 mA. These performances are realized by the new input-signal control circuit.
本文报道了一种新型的可变增益放大器,它具有低NF为1.7 dB,低失真的IM/sub / 3/ spl /50 dBc,低功耗小于30 mA。这些性能是通过新的输入信号控制电路实现的。
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引用次数: 2
High-power, high-efficiency K-band AlGaAs/GaAs heterojunction bipolar transistors 大功率、高效率k波段AlGaAs/GaAs异质结双极晶体管
Hin-Fai Chau, D. Hill, R. Yarborough, Tae Kim
We report on the state-of-the-art power performance of AlGaAs/GaAs HBTs at K-band. A prematched 12/spl times/(1.6/spl times/25) /spl mu/m/sup 2/ HBT unit cell exhibited 1.18 W CW output power (3.93 W/mm output power density) and 57.1% power-added efficiency with 6.6 dB associated gain at 20 GHz at a collector bias of 10.5 V. Peak power-added efficiency achieved was 57.8% at an output power level of 1.08 W. No intentional harmonic tuning was applied.
我们报告了k波段AlGaAs/GaAs hbt的最先进功率性能。预匹配的12/spl倍/(1.6/spl倍/25)/spl mu/m/sup 2/ HBT单元电池在20 GHz、10.5 V集电极偏置下的连续输出功率为1.18 W(输出功率密度为3.93 W/mm),功率增加效率为57.1%,相关增益为6.6 dB。在输出功率为1.08 W时,峰值功率增加效率为57.8%。没有故意的谐波调谐。
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引用次数: 10
Two phase detectors for 2.5-10 Gb/s NRZ data operation: a Hogge and a balanced mixer 两个相位检测器用于2.5-10 Gb/s NRZ数据操作:Hogge和平衡混合器
D.Y. Wu, A. Yen, D. Meeker, S. Beccue, K. Pedrotti, J. Penney, A. Price, K. Wang
Two phase detector circuits with data regeneration, a Hogge and a balanced Gilbert cell mixer, were developed in a standard Rockwell AlGaAs/GaAs HBT process. Both circuits operate at 10 Gb/s; the Hogge circuit, by not having a fixed delay and multiply circuit attached to it, also performs well at lower bit rates.
采用标准的Rockwell AlGaAs/GaAs HBT工艺开发了两个具有数据再生功能的相位检测器电路,一个Hogge电路和一个平衡的Gilbert细胞混频器。两个电路都以10gb /s的速度运行;霍格电路,由于没有固定的延迟和附加的乘法电路,在较低的比特率下也表现良好。
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引用次数: 4
A novel 75 GHz InP HEMT dynamic divider 一种新型75ghz InP HEMT动态分压器
Chris J. Madden, Doug R. Snook, R. Tuyl
A novel dynamic frequency divider IC is realized by injection locking a broadly tunable push-pull oscillator. The injection locking process is explained using a simple pumped-delay model of a two-stage ring oscillator. Two different dynamic dividers were fabricated in the Hughes 0.1 /spl mu/m gate-length InP HEMT process. The first covers 15-68 GHz while the second operates over the entire band from 50 to 75 GHz.
通过注入锁定宽可调推挽振荡器实现了一种新型动态分频集成电路。用一个简单的两级环形振荡器的泵浦延迟模型解释了注入锁定过程。采用Hughes 0.1 /spl mu/m栅长InP HEMT工艺制备了两种不同的动态隔板。第一种覆盖15-68 GHz,而第二种覆盖50 - 75 GHz的整个频段。
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引用次数: 24
A review of recent progress in InP-based optoelectronic integrated circuit receiver front-ends 基于inp的光电集成电路接收机前端研究进展综述
R. Walden
InP-based OEIC receivers look promising for high-speed (/spl ges/10 Gb/s) optical communications systems and for WDM networks because of the inherent advantages of integration, and the intrinsic speed of the devices available. This paper reviews recent developments.
基于inp的OEIC接收器在高速(/spl / 10gb /s)光通信系统和WDM网络中看起来很有前途,因为集成的固有优势和可用设备的固有速度。本文回顾了最近的发展。
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引用次数: 18
Single-chip 30 W CW AlGaAs/GaAs heterojunction bipolar transistor at 3 GHz 单片30w连续AlGaAs/GaAs异质结双极晶体管,频率为3ghz
D. Hill, Hua-Quen Tserng, Tae Kim, M. Tutt
We have fabricated heterojunction bipolar transistors that, to our knowledge, exhibit record operating voltage and single-chip output power for GaAs microwave power devices. A device with 720 /spl mu/m total emitter length achieved an output power of 4 W with 62% power-added efficiency at 3 GHz at a collector bias of 20 V. A device monolithically combining 16 unit cells, for a total emitter length of 7.68 mm, achieved a CW output power of 30 W with 55% power-added efficiency at 3 GHz.
我们已经制造了异质结双极晶体管,据我们所知,这些晶体管在GaAs微波功率器件中具有创纪录的工作电压和单芯片输出功率。一个总射极长度为720 /spl mu/m的器件在集电极偏置为20 V时,在3 GHz下实现了4 W的输出功率和62%的功率附加效率。该器件单片结合了16个单元电池,总射极长度为7.68 mm,在3ghz下实现了30w的连续波输出功率和55%的功率附加效率。
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引用次数: 6
Analysis of surface-related deep-trap effects on gate-lag phenomena in GaAs MESFETs GaAs mesfet中表面相关深阱效应对栅极滞后现象的影响分析
K. Horio, T. Yamada
Effects of surface states on gate-lag phenomena in GaAs MESFETs are studied by 2D simulation. It is shown that the deep-acceptor-like state plays a dominant role in determining the characteristics. To reduce the gate-lag, the deep acceptor should be made electron-trap-like. This can be realized by reducing the surface-state density. Some device structures expected to have less gate-lag are also described.
通过二维仿真研究了表面态对GaAs mesfet中栅极滞后现象的影响。结果表明,深层类受体状态在决定其特性方面起主导作用。为了减少门滞后,深度受体应该被做成电子陷阱状。这可以通过降低表面态密度来实现。还描述了一些期望具有较小门滞后的器件结构。
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引用次数: 4
W-band InGaAs/InP PIN diode monolithic integrated switches w波段InGaAs/InP PIN二极管单片集成开关
E. Alekseev, D. Pavlidis, M. Dickmann, T. Hackbarth
The design, fabrication, and experimental characteristics of InGaAs PIN diodes are presented for InP-based W-band monolithic integrated switches. The diodes with 10 /spl mu/m-diameter were used and showed a breakdown voltage of 17 V, a turn-on voltage of 0.36 V, and a switching cutoff frequency of 6.3 THz. The monolithic integrated switches employed microstrip transmission lines and backside via holes for low-inductance signal grounding. A radial stub-based design was used for on-chip biasing, and the high-frequency characteristics of the switches were verified by on-wafer W-band testing. The SPST PIN monolithic switch demonstrated 25 dB isolation, 1.3 dB insertion loss, and 0.8 dB reflection loss at 83 GHz.
介绍了用于基于inp的w波段单片集成开关的InGaAs PIN二极管的设计、制造和实验特性。采用直径为10 /spl mu/m的二极管,击穿电压为17 V,导通电压为0.36 V,开关截止频率为6.3 THz。单片集成开关采用微带传输线和背面通孔进行低电感信号接地。采用基于径向存根的片上偏置设计,并通过片上w波段测试验证了开关的高频特性。SPST PIN单片开关在83 GHz时具有25 dB隔离、1.3 dB插入损耗和0.8 dB反射损耗。
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引用次数: 30
期刊
GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996
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