Pub Date : 1996-11-03DOI: 10.1109/GAAS.1996.567817
T. Yokoyama, T. Kunihisa, M. Nishijima, S. Yamamoto, M. Nishitsuji, K. Nishii, M. Nakayama, O. Ishikawa
A low current dissipation MMIC power amplifier operating with a 3.5 V single voltage supply has been developed for PHS. This MMIC utilizes a pseudomorphic double heterojunction modulation doped FET (P-MODFET) to realize single voltage operation and low operating current simultaneously. It exhibits very low operating current of 141 mA at the output power of 21.5 dBm with low adjacent channel leakage power of -56.1 dBc in the single voltage supply condition. This operating current is one of the lowest values that have been reported on the single voltage operation MMIC power amplifiers for PHS.
{"title":"Low current dissipation pseudomorphic MODFET MMIC power amplifier for PHS operating with a 3.5 V single voltage supply","authors":"T. Yokoyama, T. Kunihisa, M. Nishijima, S. Yamamoto, M. Nishitsuji, K. Nishii, M. Nakayama, O. Ishikawa","doi":"10.1109/GAAS.1996.567817","DOIUrl":"https://doi.org/10.1109/GAAS.1996.567817","url":null,"abstract":"A low current dissipation MMIC power amplifier operating with a 3.5 V single voltage supply has been developed for PHS. This MMIC utilizes a pseudomorphic double heterojunction modulation doped FET (P-MODFET) to realize single voltage operation and low operating current simultaneously. It exhibits very low operating current of 141 mA at the output power of 21.5 dBm with low adjacent channel leakage power of -56.1 dBc in the single voltage supply condition. This operating current is one of the lowest values that have been reported on the single voltage operation MMIC power amplifiers for PHS.","PeriodicalId":365997,"journal":{"name":"GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-11-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130254696","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-11-03DOI: 10.1109/GAAS.1996.567872
K. Motoyoshi, T. Tambo, K. Tara, M. Hagio
This paper reports a new variable gain amplifier which has low NF of 1.7 dB, low distortion of IM/sub 3//spl les/50 dBc and low power consumption of less than 30 mA. These performances are realized by the new input-signal control circuit.
{"title":"A new low-noise, low-distortion and low-power-consumption variable gain amplifier for digital cellular phones","authors":"K. Motoyoshi, T. Tambo, K. Tara, M. Hagio","doi":"10.1109/GAAS.1996.567872","DOIUrl":"https://doi.org/10.1109/GAAS.1996.567872","url":null,"abstract":"This paper reports a new variable gain amplifier which has low NF of 1.7 dB, low distortion of IM/sub 3//spl les/50 dBc and low power consumption of less than 30 mA. These performances are realized by the new input-signal control circuit.","PeriodicalId":365997,"journal":{"name":"GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-11-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131551412","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-11-03DOI: 10.1109/GAAS.1996.567839
S. Ohmi, T. Okamoto, M. Tagami, E. Tokumitsu, H. Ishiwara
Fabrications and characterizations of high electron-mobility transistors (HEMTs) with a ferroelectric gate (F-HEMTs) are presented. The F-HEMT is a memory device whose threshold voltage can be changed even after it is fabricated, by using remanent polarization of the ferroelectric gate. Furthermore, the F-HEMT is promising of neural network applications, because it can act as a high-speed analog memory which stores synaptic weights in a neuron circuit. From I/sub D/-V/sub G/ characteristic measurements of F-HEMTs, it is demonstrated that the threshold voltage is shifted by 0.3 V by remanent polarization. The result indicates that F-HEMTs are sufficiently applicable for the high-speed analog memory.
{"title":"Device characterization of high-electron-mobility transistors with ferroelectric-gate structures","authors":"S. Ohmi, T. Okamoto, M. Tagami, E. Tokumitsu, H. Ishiwara","doi":"10.1109/GAAS.1996.567839","DOIUrl":"https://doi.org/10.1109/GAAS.1996.567839","url":null,"abstract":"Fabrications and characterizations of high electron-mobility transistors (HEMTs) with a ferroelectric gate (F-HEMTs) are presented. The F-HEMT is a memory device whose threshold voltage can be changed even after it is fabricated, by using remanent polarization of the ferroelectric gate. Furthermore, the F-HEMT is promising of neural network applications, because it can act as a high-speed analog memory which stores synaptic weights in a neuron circuit. From I/sub D/-V/sub G/ characteristic measurements of F-HEMTs, it is demonstrated that the threshold voltage is shifted by 0.3 V by remanent polarization. The result indicates that F-HEMTs are sufficiently applicable for the high-speed analog memory.","PeriodicalId":365997,"journal":{"name":"GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996","volume":"244 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-11-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129775290","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-11-03DOI: 10.1109/GAAS.1996.567844
K. Horio, T. Yamada
Effects of surface states on gate-lag phenomena in GaAs MESFETs are studied by 2D simulation. It is shown that the deep-acceptor-like state plays a dominant role in determining the characteristics. To reduce the gate-lag, the deep acceptor should be made electron-trap-like. This can be realized by reducing the surface-state density. Some device structures expected to have less gate-lag are also described.
{"title":"Analysis of surface-related deep-trap effects on gate-lag phenomena in GaAs MESFETs","authors":"K. Horio, T. Yamada","doi":"10.1109/GAAS.1996.567844","DOIUrl":"https://doi.org/10.1109/GAAS.1996.567844","url":null,"abstract":"Effects of surface states on gate-lag phenomena in GaAs MESFETs are studied by 2D simulation. It is shown that the deep-acceptor-like state plays a dominant role in determining the characteristics. To reduce the gate-lag, the deep acceptor should be made electron-trap-like. This can be realized by reducing the surface-state density. Some device structures expected to have less gate-lag are also described.","PeriodicalId":365997,"journal":{"name":"GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-11-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128193089","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-11-03DOI: 10.1109/GAAS.1996.567827
Chris J. Madden, Doug R. Snook, R. Tuyl
A novel dynamic frequency divider IC is realized by injection locking a broadly tunable push-pull oscillator. The injection locking process is explained using a simple pumped-delay model of a two-stage ring oscillator. Two different dynamic dividers were fabricated in the Hughes 0.1 /spl mu/m gate-length InP HEMT process. The first covers 15-68 GHz while the second operates over the entire band from 50 to 75 GHz.
{"title":"A novel 75 GHz InP HEMT dynamic divider","authors":"Chris J. Madden, Doug R. Snook, R. Tuyl","doi":"10.1109/GAAS.1996.567827","DOIUrl":"https://doi.org/10.1109/GAAS.1996.567827","url":null,"abstract":"A novel dynamic frequency divider IC is realized by injection locking a broadly tunable push-pull oscillator. The injection locking process is explained using a simple pumped-delay model of a two-stage ring oscillator. Two different dynamic dividers were fabricated in the Hughes 0.1 /spl mu/m gate-length InP HEMT process. The first covers 15-68 GHz while the second operates over the entire band from 50 to 75 GHz.","PeriodicalId":365997,"journal":{"name":"GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996","volume":"51 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-11-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122754824","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-11-03DOI: 10.1109/GAAS.1996.567747
Hin-Fai Chau, D. Hill, R. Yarborough, Tae Kim
We report on the state-of-the-art power performance of AlGaAs/GaAs HBTs at K-band. A prematched 12/spl times/(1.6/spl times/25) /spl mu/m/sup 2/ HBT unit cell exhibited 1.18 W CW output power (3.93 W/mm output power density) and 57.1% power-added efficiency with 6.6 dB associated gain at 20 GHz at a collector bias of 10.5 V. Peak power-added efficiency achieved was 57.8% at an output power level of 1.08 W. No intentional harmonic tuning was applied.
{"title":"High-power, high-efficiency K-band AlGaAs/GaAs heterojunction bipolar transistors","authors":"Hin-Fai Chau, D. Hill, R. Yarborough, Tae Kim","doi":"10.1109/GAAS.1996.567747","DOIUrl":"https://doi.org/10.1109/GAAS.1996.567747","url":null,"abstract":"We report on the state-of-the-art power performance of AlGaAs/GaAs HBTs at K-band. A prematched 12/spl times/(1.6/spl times/25) /spl mu/m/sup 2/ HBT unit cell exhibited 1.18 W CW output power (3.93 W/mm output power density) and 57.1% power-added efficiency with 6.6 dB associated gain at 20 GHz at a collector bias of 10.5 V. Peak power-added efficiency achieved was 57.8% at an output power level of 1.08 W. No intentional harmonic tuning was applied.","PeriodicalId":365997,"journal":{"name":"GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-11-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126142132","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-11-03DOI: 10.1109/GAAS.1996.567884
D.Y. Wu, A. Yen, D. Meeker, S. Beccue, K. Pedrotti, J. Penney, A. Price, K. Wang
Two phase detector circuits with data regeneration, a Hogge and a balanced Gilbert cell mixer, were developed in a standard Rockwell AlGaAs/GaAs HBT process. Both circuits operate at 10 Gb/s; the Hogge circuit, by not having a fixed delay and multiply circuit attached to it, also performs well at lower bit rates.
{"title":"Two phase detectors for 2.5-10 Gb/s NRZ data operation: a Hogge and a balanced mixer","authors":"D.Y. Wu, A. Yen, D. Meeker, S. Beccue, K. Pedrotti, J. Penney, A. Price, K. Wang","doi":"10.1109/GAAS.1996.567884","DOIUrl":"https://doi.org/10.1109/GAAS.1996.567884","url":null,"abstract":"Two phase detector circuits with data regeneration, a Hogge and a balanced Gilbert cell mixer, were developed in a standard Rockwell AlGaAs/GaAs HBT process. Both circuits operate at 10 Gb/s; the Hogge circuit, by not having a fixed delay and multiply circuit attached to it, also performs well at lower bit rates.","PeriodicalId":365997,"journal":{"name":"GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996","volume":"44 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-11-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125846071","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-11-03DOI: 10.1109/GAAS.1996.567875
D. Hill, Hua-Quen Tserng, Tae Kim, M. Tutt
We have fabricated heterojunction bipolar transistors that, to our knowledge, exhibit record operating voltage and single-chip output power for GaAs microwave power devices. A device with 720 /spl mu/m total emitter length achieved an output power of 4 W with 62% power-added efficiency at 3 GHz at a collector bias of 20 V. A device monolithically combining 16 unit cells, for a total emitter length of 7.68 mm, achieved a CW output power of 30 W with 55% power-added efficiency at 3 GHz.
{"title":"Single-chip 30 W CW AlGaAs/GaAs heterojunction bipolar transistor at 3 GHz","authors":"D. Hill, Hua-Quen Tserng, Tae Kim, M. Tutt","doi":"10.1109/GAAS.1996.567875","DOIUrl":"https://doi.org/10.1109/GAAS.1996.567875","url":null,"abstract":"We have fabricated heterojunction bipolar transistors that, to our knowledge, exhibit record operating voltage and single-chip output power for GaAs microwave power devices. A device with 720 /spl mu/m total emitter length achieved an output power of 4 W with 62% power-added efficiency at 3 GHz at a collector bias of 20 V. A device monolithically combining 16 unit cells, for a total emitter length of 7.68 mm, achieved a CW output power of 30 W with 55% power-added efficiency at 3 GHz.","PeriodicalId":365997,"journal":{"name":"GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-11-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132413297","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-11-03DOI: 10.1109/GAAS.1996.567881
R. Walden
InP-based OEIC receivers look promising for high-speed (/spl ges/10 Gb/s) optical communications systems and for WDM networks because of the inherent advantages of integration, and the intrinsic speed of the devices available. This paper reviews recent developments.
{"title":"A review of recent progress in InP-based optoelectronic integrated circuit receiver front-ends","authors":"R. Walden","doi":"10.1109/GAAS.1996.567881","DOIUrl":"https://doi.org/10.1109/GAAS.1996.567881","url":null,"abstract":"InP-based OEIC receivers look promising for high-speed (/spl ges/10 Gb/s) optical communications systems and for WDM networks because of the inherent advantages of integration, and the intrinsic speed of the devices available. This paper reviews recent developments.","PeriodicalId":365997,"journal":{"name":"GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-11-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134124177","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-11-03DOI: 10.1109/GAAS.1996.567625
R. Trew, M. Shin, V. Gatto
The microwave performance of electronic devices fabricated from SiC and GaN is described. The investigation makes use of theoretical simulations and the results are compared to experimental measurements. Excellent agreement between the simulated and measured data is obtained. It is demonstrated that microwave power amplifiers fabricated from SiC and GaN based semiconductors offer superior RF power performance, particularly at elevated temperature compared to comparable components fabricated from GaAs MESFET's. In particular, room temperature RF output power on the order of 4 W/mm with power-added efficiency approaching the ideal values for class A and B operation is available. These devices are likely to find application in power amplifiers for base station transmitters for cellular telephone systems, power modules for phased-array radars, and other applications. The devices are particularly attractive for applications that require operation at elevated temperature.
{"title":"Wide bandgap semiconductor electronic devices for high frequency applications","authors":"R. Trew, M. Shin, V. Gatto","doi":"10.1109/GAAS.1996.567625","DOIUrl":"https://doi.org/10.1109/GAAS.1996.567625","url":null,"abstract":"The microwave performance of electronic devices fabricated from SiC and GaN is described. The investigation makes use of theoretical simulations and the results are compared to experimental measurements. Excellent agreement between the simulated and measured data is obtained. It is demonstrated that microwave power amplifiers fabricated from SiC and GaN based semiconductors offer superior RF power performance, particularly at elevated temperature compared to comparable components fabricated from GaAs MESFET's. In particular, room temperature RF output power on the order of 4 W/mm with power-added efficiency approaching the ideal values for class A and B operation is available. These devices are likely to find application in power amplifiers for base station transmitters for cellular telephone systems, power modules for phased-array radars, and other applications. The devices are particularly attractive for applications that require operation at elevated temperature.","PeriodicalId":365997,"journal":{"name":"GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-11-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129354426","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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